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At least 685 records · Page 38

Preliminary Investigation of the Effect of Surface Treatment on the Strength of a Titanium Carbide - 30 Percent Nickel Base Cermet

Specimens of a nickel-bonded titanium carbide cermet were given the following surface treatments: (1) grinding, (2) lapping, (3) blast cleaning, (4) acid roughening, (5) oxidizing, and (6) oxidizing and refinishing. Room-temperature modulus-of-rupture and impact strength varied with the different surface treatments. Considerable strength losses resulted from the following treatments: (1) oxidation at 1600 F for 100 hours, (2) acid roughening, and (3) severe grinding with 60-grit silicon carbide abrasive. The strength loss after oxidation was partially recovered by grit blasting or diamond grinding.

MATERIALS, PROPERTIES - FLEXURE↗

Characterization of SiO 2 Thermally Grown Oxide Stress Evolution of EBCs with Al-Containing Dopants

SiC/SiC ceramic matrix composites (CMCs) are desired for use in combustion environments to achieve higher turbine operating temperatures. However, CMCs require environmental barrier coatings (EBCs) for protection from the gas environment. EBC systems are known to primarily fail through coating delamination via growth of a thermally grown oxide (TGO) at the EBC—silicon bond coating interface when exposed to steam, which accelerates the TGO growth rate. The TGO undergoes a phase transformation during thermal cycling, which results in stresses that may encourage EBC spallation. Yb-silicate EBCs with mullite and yttrium aluminum garnet (YAG) dopant additions were deposited on SiC substrates with a Si intermediate bond coating and exposed to thermal cycling in steam at 1350 °C. The impact of Al dopant additions on the TGO growth rate and the SiO 2 phase transformation was assessed. Photo-stimulated luminescence spectroscopy (PSLS) was used to characterize the Al-containing phases and to measure stress evolution in the EBC following exposure using the stress-induced peak shift of the R-lines of mullite. Raman microscopy was used to map the stresses in the Si bond coating following exposure. It was found that the TGO phase transformation upon cooling increased compressive stress in the Si bond coating within 15 µm of the TGO.

Building Materials↗

Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies

Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 μm 2 areas. We measure spin coherence times T 2 for nitrogen vacancy centers in 150 nm-thick bonded membranes of up to 623 ± 21 μs, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.

color center↗

Programmable photonic integrated meshes for modular generation of optical entanglement links

Abstract Large-scale generation of quantum entanglement between individually controllable qubits is at the core of quantum computing, communications, and sensing. Modular architectures of remotely-connected quantum technologies have been proposed for a variety of physical qubits, with demonstrations reported in atomic and all-photonic systems. However, an open challenge in these architectures lies in constructing high-speed and high-fidelity reconfigurable photonic networks for optically-heralded entanglement among target qubits. Here we introduce a programmable photonic integrated circuit (PIC), realized in a piezo-actuated silicon nitride (SiN)-in-oxide CMOS-compatible process, that implements an N × N Mach–Zehnder mesh (MZM) capable of high-speed execution of linear optical transformations. The visible-spectrum photonic integrated mesh is programmed to generate optical connectivity on up to N = 8 inputs for a range of optically-heralded entanglement protocols. In particular, we experimentally demonstrated optical connections between 16 independent pairwise mode couplings through the MZM, with optical transformation fidelities averaging 0.991 ± 0.0063. The PIC’s reconfigurable optical connectivity suffices for the production of 8-qubit resource states as building blocks of larger topological cluster states for quantum computing. Our programmable PIC platform enables the fast and scalable optical switching technology necessary for network-based quantum information processors.

47 OTHER INSTRUMENTATION↗

Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

Abstract Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born–Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride substrate and gated with an ultra-thin gold layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture, by decoupling graphene optoelectronic properties from the substrate effects, allows for observing quantum phenomena at room temperature.

Materials Science↗

Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.

Khurana, Mohit (ORCID:0000000207898672)↗

Study of Mechanical Grinding Effects on Niobium Surface

Mechanical grinding is commonly employed to eliminate surface defects such as scratches and pits from niobium cavity surfaces or sheets before cavity fabrication. Subsequently, chemically buffered polishing or electropolishing is often utilized to completely remove residues of the polishing media and any defects induced by mechanical grinding, ensuring a pristine surface. In this study, we conducted a systematic investigation to assess the influence of mechanical grinding using silicon carbide (SiC) and aluminium oxide (Al2O3) polishing media on niobium surfaces. Additionally, the study examines the effects of post-mechanical grinding chemical treatments on surface quality.

Chouhan, V.↗

Low Cost High-Performance HRE-Free 3-in-1 Electric Drive Unit

The project team completed work to expand upon American Axle & Manufacturing’s (AAM) baseline technology and develop a high-speed, AC induction electric drive unit (EDU) with total direct-oil-cooling and integrated power electronics. The project accelerated advancements in EDU technology by allowing AAM to build upon the progress made in developing the underlying baseline technologies. The following seven improvements to AAM’s baseline technology were implemented in this research and development program: 1) Increased speed (30k RPM) AC induction motor, 2) Silver-sintering of discrete silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET) to heat sinks, 3) Electrically insulated rotor bars, 4) Optimized lamination steel, 5) EDU-integrated 650VDC inverter package, 6) Over-molded stator with molded liners, and 7) 650VDC power-dense stator design. The successful development of the technology resulted in a meaningful cost reduction for EDU systems in the market. Coupled with falling battery system costs, lower EDU costs will likely accelerate the market acceptance and related production scaling of battery electric vehicles. The objective of this project was to research, develop, and test a Heavy Rare Earth (HRE)-free 3-In-1 electric drive unit (EDU) that has class leading power density and cost. The key technologies to be developed were anticipated to meet or exceed the Department of Energy (DOE) targets of a cost ≤ $\$$7/kilowatt (kW), power density ≥ 12 kW/liter, and operating voltage ≥ 600 VDC.

33 ADVANCED PROPULSION SYSTEMS↗

High temperature resistant composites from bismaleimide resin.

It is shown that bismaleimide/woven fiberglass composites molded at moderate pressures (100 psi) yield void-free laminates of good integrity. The strength of the laminates at room temperature compares favorably with epoxy/glass laminates; at 260 C, the laminates are far superior in oxidative aging to epoxy and silicon laminates. The synthesis, processing, and fabrication of a bismaleide polymer are discussed.

Gilwee, W. J.↗

Oxidation stability of advanced reaction-bonded Si3N4 materials

Four slip-cast, injection-molded and isostatically-pressed specimens of reaction-bonded silicon nitride (RBSN) were subjected to static oxidation tests at 900 C for 10 hours. Specimens containing 8-10% interconnected open porosity of size greater than one micron exhibited a 20-30% decrease in average room temperature four-point flexure strength, while those with 10% open porosity of magnitudes much smaller than one micron as well as those with 2-4% interconnected open porosity of about one micron did not decrease in strength after 900 C exposure. It was determined that preoxidation treatment at 1350 C prevents the 20-30% strength degradation due to internal oxidation, and evidence is presented which suggests that surface pit formation in some RBSN may result from contamination by the furnace environment rather than any intrinsic material properties.

Lindberg, L. J.↗

Development of plane strain fracture toughness test for ceramics using Chevron notched specimens

Chevron-notched four-point-bend and short-bar specimens have been used to determine the fracture toughness of sintered aluminum oxide and hot-pressed silicon nitride ceramics. The fracture toughness for Si3N4 is found to be essentially independent of the specimen size and chevron notch configuration, with values ranging from 4.6 to 4.9 MNm exp -3/2. In contrast, significant specimen size and notch geometry effects have been observed for Al2O3, with the fracture toughness ranging from 3.1 to 4.7 MNm exp -3/2. These effects are attributed to a rising crack growth resistance curve for the Al2O3 tested.

Bubsey, R. T.↗

A comparison of VLSI architecture of finite field multipliers using dual, normal or standard basis

Three different finite field multipliers are presented: (1) a dual basis multiplier due to Berlekamp; (2) a Massy-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features which apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for very large scale integration implementations can readily be ascertained.

Hsu, I. S.↗

A comparison of VLSI architecture of finite field multipliers using dual, normal, or standard bases

Three different finite-field multipliers are presented: (1) a dual-basis multiplier due to Berlekamp; the Massey-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features that apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for VLSI implementation can readily be ascertained.

Hsu, I. S.↗

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗

Relative sliding durability of candidate high temperature fiber seal materials

The relative sliding durability behavior of six candidate ceramic fibers for high temperature sliding seal applications is reviewed and compared. Pin on disk tests were used to evaluate potential seal materials by sliding a tow or bundle of the candidate ceramic fiber against a superalloy test disk. Tests were conducted in air under a 2.65 N load, at a sliding velocity of 0.025 m/sec and at temperatures from 25 to 900 C. Friction was measured during the tests and fiber wear, indicated by the extent of fibers broken in the tow or bundle, was measured at the end of each test. For most of the fibers, friction and wear increase with test temperature. The relative fiber durability ranking correlates with tensile strength, indicating that tensile data, which is more readily available than sliding durability data, may be useful in predicting fiber wear behavior under various conditions. A dimensional analysis of the wear data shows that the fiber durability is related to a dimensionless durability ratio which represents the ratio of the fiber strength to the fiber stresses imposed by sliding. The analysis is applicable to fibers with similar diameters and elastic moduli. Based upon the results of the research program, three fiber candidates are recommended for further study as potential seal materials. They are a silicon based complex carbide-oxide fiber, an alumina-boria-silica and an aluminosilicate fiber.

Dellacorte, Christopher↗

The abundant elements in interstellar dust

We explore the incorporation of the cosmically abundant species O, C, N, Mg, Si, Fe, and S into interstellar dust. Column densities based on Goddard High Resolution Spectrograph 3.5 km/s resolution measurements from the literature for eight individual absorbing regions toward five lines of sight are used. Corrections are applied as needed in order to account for recent improvements in oscillator strengths. In order to acquire the most accurate column densities, and check on the accuracy of the oscillator strengths, we compare column densities based on the very strong Lorentzian damped lines of C II, O I, N I, and Mg II with results for the weak lines of these species, and confirm the previously determined f-values for O I lambda 1335, C II lambda 2325, and N I lambda lambda 1159, 1160. New empirical f-values of 1.25 x 10(exp -3) and 6.25 x 10(exp -4), respectively, are derived for the Mg II weak doublet at 1239 and 1240 A. Assuming a cosmic reference abundance based on solar and B star values, we derive depletions and dust-phase abundances which suggest that more than 70% of the available Mg and Fe is incorporated into dust-grain cores, whereas only 35% of the silicon is. This implies that oxides are important constituents of the grain core population. Mg and Fe atoms are mantled onto grain cores in a ratio of 1.8 to 1, whereas approximately 4.0 Si atoms are in the mantle per Fe atom. Since Si is not expected to accrete onto silicate or graphite grains, other grain cores, perhaps oxides and/or metallic Fe, may provide mantling sites for this species. The abundances of Fe and Mg in mantles would imply that graphite grains must have a substantial coating unless oxides provide significant mantling sites for these species. The abundance of O and N in the dust phase as implied by the solar reference abundance values are difficult to reconcile with the fact that these elements are not expected to participate in mantle formation, and the 3.1 micrometer H2O ice feature is not seen in absorption toward stars similar to those studied. The B star reference abundances for O and N, however, imply that no mantling of these species has occurred. The dust-phase abundance for C implied by solar reference abundances agrees with predictions for the number of graphite grains needed to produce the 2175 A bump. B star reference abundances, however, suggest that the abundance of C in the dust phase is not always sufficient to produce the bump.

Sofia, Ulysses J.↗

Environment Conscious, Biomorphic Ceramics from Pine and Jelutong Wood Precursors

Environment conscious, biomorphic ceramics have been fabricated from pine and jelutong wood precursors. A carbonaceous preform is produced through wood pyrolysis and subsequent infiltration with oxides (ZrO2 sols) and liquid silicon to form ceramics. These biomorphic ceramics show a wide variety of microstructures, densities, and hardness behavior that are determined by the type of wood and infiltrants selected.

Singh, Mrityunjay↗