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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine

Addition of oxygen was used to control the in-plasma photo-assisted etching (PAE) of p-type Si(100) and poly-Si in a high density, inductively coupled, Faraday-shielded, Ar/Cl 2 (225/25 SCCM), 60 mTorr plasma. After etching, samples were transferred under vacuum to an UHV x-ray photoelectron spectroscopy chamber for surface analysis. Samples etched under PAE conditions (ion energies below the ionassisted etching, IAE, threshold) had a thicker surface oxide and lower [Cl] surface concentration, when compared to samples etched under IAE conditions (ion energies above the IAE threshold). PAE was found not to be affected by 0.1 or 0.25 SCCM O 2 addition, while etching stopped with more than 0.5 SCCM O 2 addition. IAE with RF power on the sample stage, resulting in -65 V self-bias, was not affected by up to 2 SCCM of oxygen addition but decreased rapidly when more than 5 SCCM O 2 was added to the plasma. These results imply that PAE may be completely suppressed, while IAE occurs unobstructed. The implications of these findings are discussed in view of applications involving continuous wave and pulsed-plasma processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

Photo-assisted etching of p-type Si was previously found to occur in a chlorine-containing, Faraday-shielded, inductively coupled plasma (ICP), and this was attributed to the vacuum ultraviolet (VUV) light generated by the plasma. Other causes for the very high etching rates were ruled out, including ion bombardment. In the present study, the substrate in the main Cl2/Ar ICP was subjected to extra VUV light that was generated in an independently controlled, auxiliary Ar/He ICP in tandem with the main ICP. The ICPs were separated by a tungsten mesh and a bundle of high-aspect-ratio quartz tubes in a honeycomb configuration. There was no measurable perturbation of the main plasma by the auxiliary plasma. The etching rate was found to be enhanced by 11%–51% with the additional VUV light provided by the auxiliary ICP. With absolute measurements of the auxiliary ICP photon flux at the sample surface, as described elsewhere, incredibly large etching yields of 90–240 Si atoms per photon were obtained. It is argued that etching is not a result of electron–hole pair formation but is instead ascribed to a photocatalytic chain reaction.

42 ENGINEERING↗
DOE OSTI2024

Reactor wall effects in Si–Cl 2 –Ar atomic layer etching

This work complements our previous manuscript [J. Vac. Sci. Technol. A41, 062602 (2023)] where predictions from molecular dynamics (MD) simulations of silicon–chlorine–argon (Si–Cl 2 –Ar) atomic layer etching (ALE) are compared to experiments. When etch product distributions for atomic chlorine (Cl) and silicon chlorides were initially compared to optical emission spectroscopy (OES) signals, it appeared that there was a discrepancy between the MD predictions and experimental results at higher ion fluences. Experiments showed a relatively long period of nearly constant Cl-containing etch products released from the ion-bombarded surface (referred to as the “plateau”) but this effect was not observed in MD simulations. In this report, we demonstrate that the “plateau” observed in the OES signals is most likely due to the desorption of Cl-containing etch products from the walls of the reactor and subsequent adsorption on the Si substrate. Experiments varying the gas residence time in the chamber while keeping incoming gas concentrations and pressure constant support this interpretation. We also conducted experiments with an additional Ar-only flow in the chamber to reduce the concentration of Cl-containing species on the chamber walls. For both sets of flow modification experiments, we observe results consistent with the hypothesis that Cl-containing species desorbing from chamber walls are a significant cause of the observed discrepancy between MD predictions and experimental observations. If the measured OES signals are corrected for this “additional” source of Cl-containing species at the surface, the MD predictions and measured OES signals are in excellent agreement. This further supports the predictive capability of MD simulations to accurately capture the relevant physical and chemical processes in plasma-assisted ALE processes. We provide an order of magnitude estimate of the required density of Cl-containing species that would account for the additional etch products observed. Finally, we discuss the implications of this effect on ALE in plasma nanofabrication.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Development of a deep potential model for F and CF 2 etching of Si and SiO 2

An understanding of plasma-surface interactions at increasingly smaller scales is invaluable for the development of novel technologies and processing techniques. Molecular dynamics (MD) simulations can provide insights into atomic-scale interactions, though they are restricted by the availability of interatomic potentials. Machine learning methods, such as Deep Potential Molecular Dynamics (DeepMD), provide a systematic framework for the development of accurate and flexible ab initio-based models. In this work, we develop DeepMD models for the ion-enhanced etching of Si and SiO 2 by F and CF 2 radicals. We employ an active learning process to expand the data set on which the model is trained and demonstrate its effect on the model accuracy. The DeepMD results are compared to data from classical MD simulations and experiments. Physical sputtering yields of SiO 2 by Ar + ions show good agreement with previous simulation results using conventional interatomic potentials, though the predicted depth profiles are different. Etching yields are calculated as a function of ion energy and neutral to ion flux ratio for the Ar + ion-enhanced etching of SiO 2 and Si by F atoms, as well as for etching of SiO 2 by CF 2 radicals, showing reasonable agreement with experimental data. Finally, an ion-enhanced surface kinetic model is fitted to the DeepMD etch yields, and the fitted parameters are compared to quantities computed directly from DeepMD simulations. This study illustrates how molecular dynamics simulations using machine learning potentials can provide an accurate model of etching processes relevant to device manufacturing.

Kounis-Melas, Andreas [Princeton Univ., NJ (United↗
DOE OSTI2021

Light-Induced Al Plating on Si for Fabrication of an Ag-Free All-Al Solar Cell

Light-induced electroplating of Al as the front electrode on the n-type emitter of Si solar cells is proposed as a substitute for screen-printed Ag. The advantages and disadvantages of Al over Cu as the front electrode are discussed. The power of a green laser used for patterning of the SiN x antireflection coating is optimized. Conditions for removal of laser damage and contamination on the laser-patterned surface are identified. The effect of plating temperature and post-annealing temperature on Al morphology and resistivity are investigated. Several plating additives are explored to improve the morphology and resistivity of the Al film. Nicotinic acid produces the lowest resistivity of 3.1 μ Ω-cm. However, the lowest contact resistivity between light-induced Al and Si is 69 mΩ-cm 2 due to laser-induced damage to the emitter. The Al film spikes through the thin n-type emitter when annealed at 500 °C causing cell failure. The process reproducibility is also poor due to atmospheric moisture.

14 SOLAR ENERGY↗
DOE OSTI2021

FeSi binary alloy electronic structure low-Si dataset (1024 atoms)

This dataset contaims the calculated atomic charge density, atomic magnetic moment, and total energy for 1600 configurations of iron-silicon (Fe-Si) binary alloys body-centered cubic (BCC) structures at 3, 6, and 9% Si. These large scale (1024 atom) ab initio calculations were produced with the LSMS code on the OLCF Summit supercomputer. LSMS GitHub repository: https://github.com/mstsuite/lsms

36 MATERIALS SCIENCE↗
DOE OSTI2021

Templated Liquid-Phase Epitaxy of InP Structures on Si

We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.We demonstrate direct and over-dielectric heteroepitaxial growth of InP on Si substrates through templated liquid-phase epitaxy. Large grains (5 um) are indicated by electron channeling contrast imaging and epitaxy is confirmed by x-ray diffraction.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
DOE OSTI2024

Effect of Silicon on High Temperature Oxidation of Fe-Cr-Si Alloys in Carbon Dioxide Environments

Supercritical carbon dioxide offers the potential for efficient and sustainable power generation. Identifying materials that can be used to construct the high temperature portions of the cycle is a barrier to developing this technology. Various Fe-Cr alloys have been identified as promising construction materials due to a favorable combination of high temperature strength, commercial availability, and cost. The effect of minor alloying elements, particularly Si, has been shown to significantly impact the oxidation and carburization processes for these alloys after relatively short duration exposures in hot carbon dioxide. The long-term impact is less understood, making it challenging to predict performance of real components that will be in service for many years. The objectives in this project are to better understand the long-term oxidation and carburization behavior of Fe-Cr alloys and the important role of Si; to enhance the existing body of literature on the long-term exposure of alloys to hot carbon dioxide; and enable lifetime predictions for future supercritical carbon dioxide power cycle components.

Menna, Valerie↗
DOE OSTI2024

Fully Fluorinated Local High Concentration Electrolytes Enabling High Energy Density Si Anodes

To develop fluorinated localized high concentration electrolytes as a novel approach for constructing a functional SEI on Si based anodes. The technological approach combines the SEI modification strategies of fluorinated carbonate solvents and local high concentration electrolytes. The resulting synergy of anion and fluorinated solvent decomposition will form a mechanically robust, fluorinated SEI that enables extended cycling with high capacity retention. The electrolytes will enable demonstration of silicon-graphite anodes with high Si content, paired with NMC811 cathodes. Characterization will focus on galvanostatic cycling to evaluate electrochemical performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

From Femtoseconds to Gigaseconds: The SolDeg Project to Analyze and Mitigate the Performance Degradation of a-Si:H/c-Si Heterojunction Solar Cells

We pursued two major projects. In the first, we studied the degradation of a-Si/c-Si Heterojunction cells. We substantially expanded our previously developed SolDeg platform, and incorporated hydrogen into it. We also expanded the capabilities of SolDeg by developing a three channel model for a very efficient way to determine long term junction dynamics. The first main result was that we identified hydrogen drifting away from the interface as a key degradation channel. The second was that we developed and proposed the concept of a “reverse silicon density gradient” in the a-Si layer that had the promise of reducing degradation by up to 80%. In the second project, we studied the degradation of TOPCon solar cells. We again identified a key degradation channel, which in these cells was the formation of pinholes across the oxide layer. We then again were able to develop and to propose a way to dramatically reduce degradation by discovering that tuning the hydrogen concentration forms a sharp and deep minimum of the recombination current.

14 SOLAR ENERGY↗
DOE OSTI2024

Synthesis of Si-Fe Chondrule-like Dust Analogues in RF Discharge Plasmas

Chondrules are tiny particles that occur in stony meteorites and are considered as the building blocks of early asteroids and planets. It is believed that they were formed by the fast heating of the dust in the solar nebula. To date, there is no lab-scale experimental study of the formation of chondrules from the initial gas phase precursors following fast heating and crystallisation. The motivation of this work is a pre-trial study of the formation of chnodrule-like particles. The formation of meteorites in the space environment is associated with the aggregation of small particles or molecular clouds under the influence of shock waves or high-energy gas discharges in the solar nebula. In this work, the properties of product formation at the nanoscale-level were investigated using different feedstock materials which are the dominant elements in the meteorite. The structural and morphological properties of the synthesised Si-Fe nanomaterials were analysed by scanning/transmission electron microscopy (SEM/TEM), and chemical composition was analysed by X-ray energy-dispersive spectroscopy (EDS). The identification of crystalline phases was carried out by X-ray diffraction (XRD), whereas the presence of an Fe-Si system in the synthesised particles was demonstrated by Mössbauer spectroscopy. The obtained materials were exposed to the relatively high-energy pulsed plasma beam on the substrate with the aim to emulate the possible fast heating and melting of the formed nanoparticles. The formation steps of growing synthetic (engineered) chondro-like particles and nanostructures in laboratory conditions is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Mechanical Behavior of Al–Al2Cu–Si and Al–Al2Cu Eutectic Alloys

In this study, laser rapid solidification technique was used to refine the microstructure of ternary Al–Cu–Si and binary Al–Cu eutectic alloys to nanoscales. Micropillar compression testing was performed to measure the stress–strain response of the samples with characteristic microstructure in the melt pool regions. The laser-remelted Al–Al2Cu–Si ternary alloy was observed to reach the compressive strength of 1.59 GPa before failure at a strain of 28.5%, which is significantly better than the as-cast alloy with a maximum strength of 0.48 GPa at a failure strain of 4.8%. The laser-remelted Al–Cu binary alloy was observed to reach the compressive strength of 2.07 GPa before failure at a strain of 26.5%, which is significantly better than the as-cast alloy with maximum strength of 0.74 GPa at a failure strain of 3.3%. The enhanced compressive strength and improved compressive plasticity were interpreted in terms of microstructural refinement and hierarchical eutectic morphology.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy

SiSn alloys have attracted growing interest for group-IV bandgap engineering, although their epitaxial growth remains challenging due to the extremely low equilibrium solubility of Sn in Si. In this work, fully strained (pseudomorphic) SiSn epitaxial layers were grown on Si (001) substrates by means of molecular beam epitaxy. A systematic investigation reveals a strong inverse correlation between growth temperature and Sn incorporation efficiency. Despite a constant Sn flux, the incorporated Sn composition decreases from 5.5% to 3.2% as the growth temperature increases, indicating a pronounced temperature dependence of Sn incorporation. Reflection high-energy electron diffraction indicates a gradual transition of the growth from two-dimensional to three-dimensional with increasing film thickness. Structural characterization by means of X-ray diffraction, atomic force microscopy, and transmission electron microscopy confirms the pseudomorphic growth and smooth surface morphology and reveals twins and stacking faults near the surface region. These results establish a quantitative reference for SiSn growth kinetics and provide guidance for future studies of SiSn and SiGeSn alloys in silicon-compatible electronic and optoelectronic applications.

SiSn alloys↗
DOE OSTI2023

Zagamiite, CaAl2Si3.5O11, the Hexagonal High-Pressure CAS Phase with Dominant Si, as a Mineral from Mars

Within the Ca-Al-silicate system, dense, layered hexagonal phases occur at high temperatures and pressures between 20 and 23 GPa. They have been observed both in nature and in experiments. In this study, we describe the endmember with a dominant sixfold coordinated Si as a mineral zagamiite (IMA 2015-022a). This new mineral identified in Martian meteorites has a general formula of (Ca,Na)(Al,Fe,Mg)2(Si,Al,□)4O11, thus defining CaAl2Si3.5O11 as a previously unknown endmember of the hexagonal CAS phases. Zagamiite assumes space group P63/mmc with a unit cell of a = 5.403(2) Å, c = 12.77(3) Å, V = 322.9(11) Å3, and Z = 2. Zagamiite contains significant Fe and Mg and a substantial deficit of Na relative to plagioclase of an equivalent Al/Si, suggesting that it was formed through crystallization from a melt that was derived from a plagioclase-dominant mixture of plagioclase and clinopyroxene above the solidus beyond 20 GPa.

Ma, Chi (ORCID:0000000218287033)↗
DOE OSTI2025

Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 Crystals

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 , providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe 3 , substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr 2 Si 2 Te 6 result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS 2 induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices.

2D van der Waals interfaces↗
DOE OSTI2022

Polarization-dependent conversion efficiency of carbon nanotube-Si heterojunction solar cells based on aligned carbon nanotube films

We have fabricated solar cells that implement heterojunctions of Si and aligned carbon nanotube (CNT) films. Polarization-dependent optical absorption of highly aligned CNTs led to polarization-dependent conversion efficiencies, which in turn provided insight into the role of the CNT layer in the power generation mechanism in these heterojunction solar cells. When the incident light polarization was parallel to the CNT alignment direction so that the light absorption in the CNT layer was maximized, the short circuit photocurrent decreased by ~25%. This indicates that electron–hole pair generation in the CNT layer does not directly lead to power generation and that the CNT-Si heterojunctions in our devices are Schottky junctions rather than p–n junctions.

Physics↗
DOE OSTI2021

Chapmanite [Fe 2 Sb(Si 2 O 5 )O 3 (OH)]: thermodynamic properties and formation in low-temperature environments

Abstract. of synthetic Sb 2 O 5 , MgSb 2 O 6 (analogue of the mineral byströmite), Mg[Sb(OH) 6 ] 2 ∙6H 2 O (brandholzite), and natural chapmanite [(Fe 1.88 Al 0.12 )Sb(Si 2 O 5 )O 3 (OH)]. Enthalpies of reactions, including formation enthalpies, were evaluated using reference compounds Sb, Sb 2 O 3 , Sb 2 O 5 , and other phases, with high-temperature oxide melt solution calorimetry in lead borate and sodium molybdate solvents. Heat capacity and entropy were determined by relaxation and differential scanning calorimetry. The best set of Δ f H o (kJ mol -1 ) and S o (J mol -1 K -1 ) is byströmite -1733.0±3.6, 139.3±1.0; brandholzite -5243.1±3.6, 571.0±4.0; and chapmanite -3164.9±4.7, 305.1±2.1. The data for chapmanite give Δ f G o of -2973.6±4.7 kJ mol -1 and log K=-17.10 for the dissolution reaction (Fe 1.88 Al 0.12 )Sb(Si 2 O 5 )O 3 (OH) + 6H + → 1.88Fe 3+ + 0.12Al 3+ + 2SiO$_2^0$ + Sb(OH)$_3^0$ + 2H 2 O. Analysis of the data showed that chapmanite is finely balanced in terms of its stability with schafarzikite (FeSb 2 O 4 ) and tripuhyite (FeSbO 4 ) under a specific, narrow range of conditions when both aqueous Fe(III) and Sb(III) are abundant. In such a model, chapmanite is metastable by a narrow margin but could be stabilized by high SiO$_2^0$(aq) activities. Natural assemblages of chapmanite commonly contain abundant amorphous silica, suggesting that this mechanism may be indeed responsible for the formation of chapmanite. Chapmanite probably forms during low-temperature hydrothermal overprint of pre-existing Sb ores under moderately reducing conditions; the slightly elevated temperatures may help to overcome the kinetic barrier for its crystallization. During weathering, sheet silicates may adsorb Sb 3+ in tridentate hexanuclear fashion, thus exposing their chapmanite-like surfaces to the surrounding aqueous environment. Formation of chapmanite, as many other sheet silicates, under ambient conditions, is unlikely.

58 GEOSCIENCES↗