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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Stretchable and foldable electronic devices

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Stretchable and foldable electronic devices

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Stretchable and foldable electronic devices

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Rogers, John A.↗
DOE OSTI2018

Large-area and bright pulsed electroluminescence in monolayer semiconductors

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS 2 , WS 2 , MoSe 2 , and WSe 2 ) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanoshell quantum dots: Quantum confinement beyond the exciton Bohr radius

Nanoshell quantum dots (QDs) represent a novel class of colloidal semiconductor nanocrystals (NCs), which supports tunable optoelectronic properties over the extended range of particle sizes. Traditionally, the ability to control the bandgap of colloidal semiconductor NCs is limited to small-size nanostructures, where photoinduced charges are confined by Coulomb interactions. A notorious drawback of such a restricted size range concerns the fact that assemblies of smaller nanoparticles tend to exhibit a greater density of interfacial and surface defects. This presents a potential problem for device applications of semiconductor NCs where the charge transport across nanoparticle films is important, as in the case of solar cells, field-effect transistors, and photoelectrochemical devices. Furthermore, the morphology of nanoshell QDs addresses this issue by enabling the quantum-confinement in the shell layer, where two-dimensional excitons can exist, regardless of the total particle size. Such a geometry exhibits one of the lowest surface-to-volume ratios among existing QD architectures and, therefore, could potentially lead to improved charge-transport and multi-exciton characteristics. The expected benefits of the nanoshell architecture were recently demonstrated by a number of reports on the CdS bulk /CdSe nanoshell model system, showing an improved photoconductivity of solids and increased lifetime of multi-exciton populations. Along these lines, this perspective will summarize the recent work on CdS bulk /CdSe nanoshell colloids and discuss the possibility of employing other nanoshell semiconductor combinations in light-harvesting and lasing applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Dispersion of the refractive index in high-k dielectrics

A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Semiconductor: Supply Chain Deep Dive Assessment

In February 2021, President Biden signed Executive Order (EO) 14017, “America’s Supply Chains,” directing seven executive agencies to evaluate the resilience and security of the nation’s critical supply chains and to craft strategies for six industrial bases that underpin America’s economic and national security. See Sec. 3(b) of E.O. 14017. As part of the one-year response to EO 14017, the U.S. Department of Energy (DOE), through the national laboratories, conducted evaluations of the supply chains that encompass the Energy Sector Industrial Base, with a particular focus on technologies required to decarbonize the U.S. by 2050. This report focuses on one of these technologies, semiconductors, both conventional and wide bandgap (WBG) power electronics (PE). As noted in the 100-Day report, conventional semiconductors are a keystone technology that are essential for the operation of nearly every electronic device, including those that are critical to decarbonization, such as electric vehicles (EVs), industrial and building applications, and electricity generation and end use. In addition, power electronics have been applied to industrial equipment to improve energy efficiency and enhance controllability. Power electronics have also been used to improve the reliability of data centers and critical infrastructure, including the stabilization of the electric grid while subjected to disturbances. Increasingly, power electronics are being used to integrate renewable energy and battery storage systems, enabling new grid services and the development of microgrids. It is estimated that 30% of the electricity used in the U.S. passes through power electronic devices, and studies suggest that this number could reach 80% as power electronics are deployed in more markets. Nearly all forms of electrified transportation will depend on power electronics. Power electronic systems utilize high-capacity semiconductor devices at their core. The continued growth in power electronics depends on sustained innovation in the semiconductor industry.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The Self-Biased Circulator: Ferrite Materials Design and Process Considerations

A strategic goal of next-generation transmit and receive modules used in radar and communication platforms is the continued miniaturization of semiconductor based electronics in conjunction with their integration with ferrite control elements, chief among them, the circulator. Here, we address the singular goal of efforts to transform the circulator, in its present form a three dimensional construct, to a two-dimensional device. Key to this transformation is the development of self-biased ferrite materials that are necessary for the breaking of time reversal symmetry and nonreciprocal performance of circulators and isolators. A discussion of efforts to integrate this new two-dimensional device with semiconductor-based active components will be addressed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn 1-x Ga x Se 2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This approach, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., >100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices.

14 SOLAR ENERGY↗
DOE OSTI2024

Protective Catalyst Systems on III-V and Si-based Semiconductors for Efficient, Durable Photoelectrochemical Water Splitting Devices

The overall goal of this project was to develop unassisted water splitting devices based on III-V materials, creating pathways to improve performance in terms of efficiency, improve durability, and cost. One major objective is to develop pathways to systems that can ultimately achieve > 20% solar-to-hydrogen (STH) efficiency. Another objective was to develop pathways to high efficiency systems that can operate on-sun for at least 2 weeks. With respect to cost, this research provide new approaches to tandem photoelectrode design and fabrication that one day may allow for costs to reach $200/m 2 . Two distinct water splitting schemes were explored: Scheme 1 aims to develop high efficiency devices with tandem III-V photoabsorbers (e.g. GaInP 2 /GaInAs) with Scheme 2 targeting cost reduction while maintaining high efficiency by growing InGaN on crystalline Si (InGaN/Si). Both schemes were employed to couple with thin film, semi-transparent, catalytic/protection layers containing reduced or zero precious metal content that can enhance durability while maintaining high efficiency and enabling low material costs. Overall the project greatly advanced the technology to developing high performance systems with increased durability, as demonstrated by true on-sun testing through partnership with the National Renewable Energy Laboratory (NREL).

08 HYDROGEN↗
DOE OSTI2015

Methods and devices for optimizing the operation of a semiconductor optical modulator

A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

42 ENGINEERING↗
DOE OSTI2021

Low-Frequency Electronic Noise in Quasi-2D van der Waals Antiferromagnetic Semiconductor FePS 3 —Signatures of Phase Transitions

Here, low-frequency current fluctuations, i.e., noise, in the quasi-2D van der Waals antiferromagnetic semiconductor FePS 3 with the electronic bandgap of 1.5 eV is investigated. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS 3 are measured at different temperatures. The noise spectral density is of the 1/f-type over most of the examined temperature range but reveals well-defined Lorentzian bulges, and increases strongly near the Néel temperature T N =118 K (f is the frequency). Intriguingly, the noise spectral density attains its minimum at temperature T≈200 K, which is attributed to an interplay of two opposite trends in noise scaling—one for semiconductors and another for materials with the phase transitions. The Lorentzian corner frequencies reveal unusual dependence on temperature and bias voltage, suggesting that their origin is different from the generation—recombination noise in conventional semiconductors. The obtained results are important for proposed applications of antiferromagnetic semiconductors in spintronic devices. They also attest to the power of the noise spectroscopy for monitoring various phase transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Electric field controlled spin interference in a system with Rashba spin-orbit coupling

There have been intense research efforts over the last years focused on understanding the Rashba spin-orbit coupling effect from the perspective of possible spintronics applications. An important component of this line of research is aimed at control and manipulation of electron’s spin degrees of freedom in semiconductor quantum dot devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction in a two-dimensional electron system embedded in a host semiconducting material that lacks inversion-symmetry. This way, the Rashba spin-orbit coupling effect may potentially lead to fabrication of a new generation of spintronic devices where control of spin, thus magnetic properties, is achieved via an electric field and not a magnetic field. In this work we investigate theoretically the electron’s spin interference and accumulation process in a Rashba spin-orbit coupled system consisting of a pair of two-dimensional semiconductor quantum dots connected to each other via two conducting semi-circular channels. The strength of the confinement energy on the quantum dots is tuned by gate potentials that allow “leakage” of electrons from one dot to another. While going through the conducting channels, the electrons are spin-orbit coupled to a microscopically generated electric field applied perpendicular to the two-dimensional system. We show that interference of spin wave functions of electrons travelling through the two channels gives rise to interference/conductance patterns that lead to the observation of the geometric Berry’s phase. Achieving a predictable and measurable observation of Berry’s phase allows one to control the spin dynamics of the electrons. It is demonstrated that this system allows use of a microscopically generated electric field to control Berry’s phase, thus, enables one to tune the spin-dependent interference pattern and spintronic properties with no need for injection of spin-polarized electrons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO 2 ) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗