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At least 685 records · Page 38

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

GaN p ++ /n ++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 10 20 cm -3 shows NDR at~1.8 V and a large current density of 3.4 KA/cm 2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

Epitaxy↗

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗

Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Hot carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications such as photocatalysis and in photodetectors that circumvent bandgap limitations. However, direct experimental quantification of steady-state energy distributions of hot carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultrathin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

Science & Technology - Other Topics↗

Method for large and rapid terahertz imaging

A method of large-scale active THz imaging using a combination of a compact high power THz source (>1 watt), an optional optical system, and a camera for the detection of reflected or transmitted THz radiation, without the need for the burdensome power source or detector cooling systems required by similar prior art such devices. With such a system, one is able to image, for example, a whole person in seconds or less, whereas at present, using low power sources and scanning techniques, it takes several minutes or even hours to image even a 1 cm.times.1 cm area of skin.

47 OTHER INSTRUMENTATION↗

Time-dependent of characteristics of Cu/CuS/n-GaAs/In structure produced by SILAR method

Highlights: • The CuS thin film used at Cu/n-GaAs structure is grown by SILAR method. • There has been no report on ageing of characteristics of this junction in the literature. • The properties of Cu/CuS/n-GaAs/In structure are examined with different methods. • It has been shown that Cu/CuS/n-GaAs/In structure has a stable interface. - Abstract: The aim of this study is to explain effects of the ageing on the electrical properties of Cu/n-GaAs Shottky barrier diode with Copper Sulphide (CuS) interfacial layer. CuS thin films are deposited on n-type GaAs substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The structural and the morphological properties of the films have been carried out by Scanning Electron Microscopy (SEM) and X-Ray Diffraction (XRD) techniques. The XRD analysis of as-grown films showed the single-phase covellite, with hexagonal crystal structure built around two preferred orientations corresponding to (102) and (108) atomic planes. The ageing effects on the electrical properties of Cu/CuS/n-GaAs/In structure have been investigated. The current–voltage (I–V) measurements at room temperature have been carried out to study the change in electrical characteristics of the devices as a function of ageing time. The main electrical parameters, such as ideality factor (n), barrier height (Φ{sub b}), series resistance (R{sub s}), leakage current (I{sub 0}), and interface states (N{sub ss}) for this structure have been calculated. The results show that the main electrical parameters of device remained virtually unchanged.

36 MATERIALS SCIENCE↗

Spectral interferometry-based microwave-frequency vibrometry for integrated acoustic wave devices

Microwave phononics is a promising platform for sensing, computing, and quantum information science; thus, sensitive and high-throughput characterization tools are needed not only for device verification and optimization but also for revealing transient and nonlinear dynamics. Existing interferometric optical vibrometers for 2D mapping are challenged by operating point stabilization, surface reflectivity contrast, and long acquisition time. Here, we use spectral interferometry, which is insensitive to these factors and utilizes a continuous raster scanning scheme for vibration mapping with high throughput. We intensity-modulate our broadband light source with an electro-optic modulator to resolve vibrations at microwave frequencies. Our system requires no fast photodetector or digitizer operating in the microwave frequency range. We image the 1 GHz vibration field of a 300 × 150 µm 2 area of an entire surface acoustic wave device in 10 min with simultaneous surface profilometry. Our system has a vibration sensitivity of 120 fm/sqrt(Hz) and a linear throughput of 0.77 mm/s on the chip surface. The technique offers capabilities for characterizing a wide range of acoustic wave and micromechanical devices to better understand their behavior and performance.

47 OTHER INSTRUMENTATION↗

Two-dimensional measurement of edge impurity emissions using space-resolved extreme ultraviolet spectrometer in Large Helical Device

A space-resolved extreme ultraviolet (EUV) spectrometer working in wavelength range of 50-500 A has been developed to measure two-dimensional distribution of impurity spectral lines emitted from edge plasma of Large Helical Device (LHD), in which the magnetic field is formed by stochastic magnetic field with three-dimensional structure called ergodic layer. The two-dimensional measurement of edge impurity line emissions is carried out by scanning horizontally the observation chord of the space-resolved EUV spectrometer during single LHD discharge. Images of CIV (312.4 A) and HeII (303.78 A) are presented as the first result. The results are compared with ones calculated from the edge chord length in the ergodic layer of LHD plasma.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Increased Throughput and Sensitivity of Synchrotron-Based Characterization for Photovoltaic Materials

Optimizing photovoltaic (PV) devices requires characterization and optimization across several length scales, from centimeters to nanometers. Synchrotron-based micro-X-ray fluorescence spectromicroscopy (μ-XRF) is a valuable link in the PV-related material and device characterization suite. μ-XRF maps of elemental distributions in PV materials have high spatial resolution and excellent sensitivity and can be measured on absorber materials and full devices. Recently, we implemented on-the-fly data collection (flyscan) at Beamline 2-ID-D at the Advanced Photon Source at Argonne National Laboratory, eliminating a 300 ms per-pixel overhead time. This faster scanning enables high-sensitivity (~10 14 atoms/cm 2 ), large-area (10 000s of μm 2 ), high-spatial resolution (<;200 nm scale) maps to be completed within a practical scanning time. We specifically show that when characterizing detrimental trace metal precipitate distributions in multicrystalline silicon wafers for PV, flyscans can increase the productivity of μ-XRF by an order of magnitude. Additionally, flyscan μ-XRF mapping enables relatively large-area correlative microscopy. As an example, we map the transition metal distribution in a 50 μm-diameter laser-fired contact of a silicon solar cell before and after lasing. As a result, while we focus on μ-XRF of mc-Si wafers for PV, our results apply broadly to synchrotron-based mapping of PV absorbers and devices.

14 SOLAR ENERGY↗

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Abstract Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

47 OTHER INSTRUMENTATION↗

Formation of Supported Graphene Oxide: Evidence for Enolate Species

Graphene oxides are promising materials for novel electronic devices or anchoring of the active sites for catalytic applications. Here we focus on understanding the oxygen binding on different regions of graphene (Gr) on Ru(0001). Differences in the Gr/Ru lattices result in the superstructure, which offers an array of distinct adsorption sites. We employ scanning tunneling microscopy and density functional theory to map out the chemical identity and stability of prepared oxygen functionalities in different Gr regions. We demonstrate that in the regions that are close to the metal substrate, the terminally-bonded enolate groups are strongly preferred over bridge-bonded epoxy configurations. No oxygen species are observed on the graphene regions that are far from the underlying Ru, indicating their low relative stability. This study provides a clear fundamental basis for understanding the structural and electronic factors that affect the stability of enolate and epoxy species as a function of Gr/Ru interactions.

Supported Graphene, Graphene Functionalization, Gr↗

Campanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber

One of the major challenges to the widespread adoption of plasmonic and nano-optical devices in real-life applications is the difficulty to mass-fabricate nano-optical antennas in parallel and reproducible fashion, and the capability to precisely place nanoantennas into devices with nanometer-scale precision. In this study, we present a solution to this challenge using the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical transformers onto the core of an optical fiber in a single step, mimicking the 'campanile' near-field probes. Imprinted probes were fabricated using a custom-built imprinter tool with co-axial alignment capability with sub < 100 nm position accuracy, followed by a metallization step. Scanning electron micrographs confirm high imprint fidelity and precision with a thin residual layer to facilitate efficient optical coupling between the fiber and the imprinted optical transformer. The imprinted optical transformer probe was used in an actual NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads. The calibration scans confirmed that imprinted probes enable sub-diffraction limited imaging with a spatial resolution consistent with the gap size. This novel nano-fabrication approach promises a low-cost, high-throughput, and reproducible manufacturing of advanced nano-optical devices.

36 MATERIALS SCIENCE↗

SU-E-T-245: Detection of the Photon Target Damage in Varian Linac Based On Periodical Quality Assurance Measurements

Purpose: To determine the best dosimetric metric measured by our routine QA devices for diagnosing photon target failure on a Varian C-series linac. Methods: We have retrospectively reviewed and analyzed the dosimetry data from a Varian linac with a target degradation that was undiagnosed for one year. A failure in the daily QA symmetry tests was the first indication of an issue. The beam was steered back to a symmetric shape and water scans indicated the beam energy had changed but stayed within the manufacturer’s specifications and agreed reasonably with our treatment planning system data. After the problem was identified and the target was replaced, we retrospectively analyzed our QA data including diagonals normalized flatness (F-DN) from the daily device (DQA3), profiles from an ionization chamber array (IC Profiler), as well as profiles and PDDs from a 3D water Scanner (3DS). These metrics were cross-compared to determine which was the best early indicator of target degradation. Results: A 3% change in FDN measured by the DQA3 was found to be an early indicator of target degradation. It is more sensitive than changes in output, symmetry, flatness or PDD. All beam shape metrics (flatness at dmax and 10 cm depth, and F-DN) indicated an energy increase while the PDD indicated an energy decrease. This disagreement between the beam-shape based energy metrics (F-DN and flatness) and PDD based energy metric may indicate target failure as opposed to an energy change resulting from changes in the incident electron energy. Conclusion: Photon target degradation has been identified as a failure mode for linacs. The manufacturer’s test for this condition is highly invasive and requires machine down time. We have demonstrated that the condition could be caught early based upon data acquired during routine QA activities, such as the F-DN.

07 ISOTOPE AND RADIATION SOURCES↗

In-situ transmission electron microscopy investigation on surface oxides thermal stability of niobium

Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. Structural defects at the Nb/Si and air/Nb interface may be a major source of two-level systems (TLS), which are detrimental to the device's coherence time. Thus, identifying and understanding the microscopic origin of possible TLS in Nb-based devices and their relationship to processing is key to superconducting qubit performance improvement. Here this work studied the structure and thermal stability of surface oxide on physical vapor deposited Nb films on Si wafers, using aberration-corrected (scanning) transmission electron microscopy and spectroscopy. Here, all Nb films exhibit columnar growth with strong [110] textures. After in-situ heating of the heterostructure at 360 °C inside the microscope, the initial amorphous niobium surface oxides decompose into face-centered cubic Nb nanograins in the amorphous Nb-O matrix, which may reduce microwave dissipation. Despite changes in the microstructure and chemistry of the niobium oxide surface layer due to heat treatment, the interface between the Nb and the surface oxide layer remains almost unchanged. Our comprehensive study of the Nb surface oxide decomposition mechanism may guide future superconducting qubit device optimization through interfacial scattering center and TLS minimization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In Situ Recrystallization of Co-Evaporated Cu(In,Ga)Se2 Thin Films by Copper Chloride Vapor Treatment towards Solar Cell Applications

Cu(In,Ga)Se2 (or CIGS) thin films and devices were fabricated using a modified three-stage process. Using high deposition rates and a low temperature during the process, a copper chloride vapor treatment was introduced in between the second and third stages to enhance the films properties. X-ray diffraction and scanning electron microscopy demonstrate that drastic changes occur after this recrystallization process, yielding films with much larger grains. Secondary ion mass spectrometry shows that the depth profile of many elements is not modified (such as Cu, In and Se) while others change dramatically (such as Ga and Na). Because of the competing effects of these changes, not all parameters of the solar cells are enhanced, yielding an increase of 15% in the device efficiency at the most.

14 SOLAR ENERGY↗

Frenkel excitons in heat-stressed supramolecular nanocomposites enabled by tunable cage-like scaffolding

Delocalized Frenkel excitons—coherently shared excitations among chromophores—are responsible for the remarkable efficiency of supramolecular light-harvesting assemblies within photosynthetic organisms. The translation of nature’s design principles to applications in optoelectronic devices has been limited by the fragility of the supramolecular structures used and the delicate nature of Frenkel excitons, particularly under mildly changing solvent conditions and elevated temperatures and upon deposition onto solid substrates. Here, we overcome those functionalization barriers through composition of stable supramolecular light-harvesting nanotubes enabled by tunable (~4.3–4.9 nm), uniform (±0.3 nm) cage-like scaffolds. High-resolution cryogenic electron microscopy, combined with scanning electron microscopy, broadband femtosecond transient absorption spectroscopy and near-field scanning optical microscopy revealed that excitons within the cage-like scaffolds are robust, even under extreme heat stress, and control over nanocomposite dimensions is maintained on solid substrates. Our bio-inspired nanocomposites provide a general framework for the development of next-generation organic devices made from stable supramolecular materials.

14 SOLAR ENERGY↗

Differential Multiphoton Laser Scanning Microscopy

Multifocal multiphoton laser scanning microscopy (mfMPLSM) in the biological and medical sciences has the potential to become a ubiquitous tool for obtaining high-resolution images at video rates. While current implementations of mfMPLSM achieve very high frame rates, they are limited in their applicability to essentially those biological samples that exhibit little or no scattering. In this paper, we report on a method for mfMPLSM in which whole-field detection with a single detector, rather than detection with a matrix of detectors, such as a charge-coupled device (CCD) camera, is implemented. This advance makes mfMPLSM fully compatible for use in imaging through scattering media. Further, we demonstrate that this method makes it possible to simultaneously obtain multiple images and view differences in excitation parameters in a single scan of the specimen.

47 OTHER INSTRUMENTATION↗

Imaging Electrons in Two Dimensional Materials (Final report)

Two-dimensional (2D) materials have extraordinary characteristics that offer promising new approaches for science and technology. Electrons in graphene can move ballistically through a sheet, even though it is only a single atom thick. And transition metal dichalcogenide materials can be cleaved into 2D flakes of all types – metals, semiconductors, insulators, magnetic materials, and superconductors. To benefit from these discoveries, the science needs to be understood to transform 2D materials into useful new devices and systems. The evolution in time of atomic scale graphene structures has been studied in time with a transmission electron microscope (TEM), and ballistic transport of electrons in graphene was been imaged using a cooled scanning probe microscope (SPM), as well as electron motion in MoS 2 . Graphene is only one atom thick but is extremely strong, creating the opportunity to fabricate atomic scale structures in the lateral direction. Using an atomic resolution TEM, a suspended sheet of graphene can be shaped by a Si impurity atom on its surface that acts like a chisel to open up apertures, one atom at a time. The electrons in the TEM provide both the chiseling energy and the ability to image the results. Electrons and holes in graphene form a new type of electronic system with conical conduction and valence bands that meet at the Dirac point, with no energy gap. For moderate densities, the carriers form a Fermi liquid with ballistic transport over micron-scale distances. Using a cooled SPM the cyclotron orbit of electrons in graphene has been imaged. In the magnetic focusing regime, electrons leaving a point contact circle around and leave from a second point contact when the cyclotron diameter is equal to the contact spacing. The paths of electrons are focused - they enter at different angles but converge again at the exiting contact. When the SPM tip knocks an electron out of its orbit, an imaging signal is created. The ballistic motion of carriers in graphene opens the way for ballistic devices that manipulate beams of electrons and holes. Our collaborator Gil-Ho Lee, in Philip Kim's group, created a collimating contact by placing zig-zag absorbers on either side of entering electrons. Our cooled SPM was used to image the electron beam and determine its 9-degree halfwidth. By changing the gate voltage, a collimated beam of holes was also created, opening the way for colliding beam experiments. Coherent beams of carriers are desirable for quantum information processing. Via Andreev reflection, superconducting contacts can covert Cooper pairs in a superconductor to an ingoing and outgoing electrons and holes. Using our cooled SPM, Andreev reflection was imaged from a superconducting contact on a graphene device. Magnetic focusing was used to create an incoming beam of electrons and an outgoing beam of holes, detected by a third point contact. The images show a clear transition from normal reflection above the superconducting transition temperature to Andreev reflection as the device is cooled. Transition metal dichalcogenides offer a wide array of materials that can be exfoliated into ultrathin 2D sheets. A cooled SPM can be used to detect quantum dots as well as to image electron flow. The tip charge capacitively couples to electrons on the dot, acting as a gate to tune the dot conductance. Coulomb blockade peaks appear as a bullseye pattern in an SPM image as the tip is raster scanned above the dot. This approach was used to detect quantum dots in a MoS 2 channel as the carrier density was reduced and electrons pooled in low energy points. Through our DOE supported research, cooled SPM imaging has proven to be a very useful tool to uncover the motion of electrons and holes in the new quantum materials graphene and MoS 2 .

36 MATERIALS SCIENCE↗

Toward Scalable Perovskite Solar Modules Using Blade Coating and Rapid Thermal Processing

Toward scalable manufacturing of perovskite solar panels, high-performance planar p–i–n perovskite solar cells (PVSCs) and modules have been demonstrated with blade coating and rapid thermal processing (RTP). The PVSCs made using RTP for less than 30 s have equivalent photovoltaic performance as devices fabricated from hot-plate annealing for 2 min. The resulting PVSCs show the best average power conversion efficiency (PCE) of over 18.47% from forward and reverse scans. Mini-modules with an active area of over 2.7 cm 2 exhibit a champion average PCE of over 17.73% without apparent hysteresis. To the best of our knowledge, these efficiencies are the highest for PVSCs processed by the combination of blade coating and RTP. Furthermore, both the blade coating and RTP were performed in an ambient environment, paving the way for the large-scale production of PVSCs through high-speed roll-to-roll printing.

14 SOLAR ENERGY↗