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At least 685 records · Page 38

Feasibility of atomic layer etching of polymer material based on sequential O{sub 2} exposure and Ar low-pressure plasma-etching

We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O{sub 2} exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with Almost-Equal-To 0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Comparative analysis of continuous-wave surface-plasma negative ion sources with various discharge geometry

Negative ion extraction from continuous-wave (CW) magnetron and semiplanotron discharges was studied and it was compared with that for the source with Penning electrode geometry. The CW negative ion beam up current to 13 mA was extracted from the magnetron source with emission aperture of 3.5 mm in diameter, while the beam with current up to 8 mA was obtained from the semiplanotron source modification. Characteristics of CW magnetron and semiplanotron sources are presented and analyzed.

43 PARTICLE ACCELERATORS↗

On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sub x}:H (0 < x < 2) with time-modulated dc magnetron plasma

Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by repeatedly switching on and off a dc magnetron magnetic coil. It is demonstrated that the resulting self-induction effect leads eventually to an increase in the probability of collisions between discharge electrons and gaseous components. The infrared (IR) spectra of the films showed that plasma modulation enhances predominantly the content of bridging oxygen in the a-SiO{sub x}:H matrix by strengthening the oxygenionization process. It is assumed that this also increases the concentration of silicon nanoclusters ncl-Si with an oxidized outer surface in the plasma and, thus, enhances the ncl-Si flux toward the electrodes of the dc magnetron. The photoluminescence spectra include two broad overlapping bands characteristic of amorphous ncl-Si with maxima in the range of 600–1000 nm.

36 MATERIALS SCIENCE↗

Treatment surfaces with atomic oxygen excited in dielectric barrier discharge plasma of O{sub 2} admixed to N{sub 2}

This paper describes the increase in surface energy of substrates by their treatment with gas composition generated in plasmas of DBD (Dielectric Barrier Discharge) in O2 admixed with N2. Operating gas dissociation and excitation was occurred in plasmas developed in two types of reactors of capacitively-coupled dielectric barrier configurations: coaxial cylindrical, and flat rectangular. The coaxial cylindrical type comprised an inner cylindrical electrode encapsulated in a ceramic sheath installed coaxially inside a cylindrical ceramic (quartz) tube passing through an annular outer electrode. Components of the flat rectangular type were a flat ceramic tube of a narrow rectangular cross section supplied with two flat electrodes mounted against one another outside of the long parallel walls of this tube. The operating gas, mixture of N{sub 2} and O{sub 2}, was flowing in a completely insulated discharge gap formed between insulated electrodes of the devices with an average velocity of gas inlet of about 7 to 9 m/s. Dielectric barrier discharge plasma was excited in the operating gaps with a bipolar pulse voltage of about 6 kV for 2 ms at 50 kHz repetition rate applied to the electrodes of the coaxial device, and of about 14 kV for 7 ms at 30 kHz repetition rate for the flat linear device. A lifetime of excited to the 2s{sup 2}2p{sup 4}({sup 1}S{sub 0}) state in DBD plasma and streaming to the surfaces with a gas flow atomic oxygen, responsible presumably for treating surfaces, exceeded 10 ms in certain cases, that simplified its separation from DBD plasma and delivery to substrates. As it was found in particular, surfaces of glass and some of polymers revealed significant enhancement in wettability after treatment.

36 MATERIALS SCIENCE↗

Investigating the effects of electron bounce-cyclotron resonance on plasma dynamics in capacitive discharges operated in the presence of a weak transverse magnetic field

Recently, Patil et al. [Phys. Rev. Res. 4, 013059 (2022)] have reported the existence of an enhanced operating regime when a low-pressure (5 mTorr) capacitively coupled discharge (CCP) is driven by a very high radio frequency (60 MHz) source in the presence of a weak external magnetic field applied parallel to its electrodes. Their particle-in-cell simulations show that a significantly higher bulk plasma density and ion flux can be achieved at the electrode when the electron cyclotron frequency equals half of the applied radio frequency for a given fixed voltage. In the present work, we take a detailed look at this phenomenon and further delineate the effect of this “electron bounce-cyclotron resonance (EBCR)” on the electron and ion dynamics of the system. We find that the ionization collision rate and stochastic heating are maximum under resonance condition. The electron energy distribution function also indicates that the population of tail-end electrons is highest for the case where EBCR is maximum. Formation of electric field transients in the bulk plasma region is also seen at lower values of applied magnetic field. Finally, we demonstrate that the EBCR-induced effect is a low-pressure phenomenon and weakens as the neutral gas pressure increases. The potential utility of this effect to advance the operational performance of CCP devices for industrial purposes is discussed in this report.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Divertor impurity injection using high voltage arcs for impurity transport studies on the Mega Amp Spherical Tokamak

The operation of next-generation fusion reactors will be significantly affected by impurity transport in the scrape-off layer (SOL). Current modelling efforts are restricted by a lack of detailed data on impurity transport in the SOL. In order to address this, a carbon injector has been designed and installed on the Mega Amp Spherical Tokamak (MAST). The injector creates short lived carbon plumes originating at the MAST divertor lasting less than 50 μs. High voltage capacitor banks are used to create a discharge across concentric carbon electrodes located in a probe mounted on the Divertor Science Facility in the MAST lower divertor. This results in a very short plume duration allowing observation of the evolution of the plume and precise localisation of the plume relative to the X-point on MAST. The emission from the carbon plume was imaged using fast visible cameras filtered in order to isolate the carbon II and carbon III emission lines centered around 514 nm and 465 nm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes

A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High-Voltage MOSFET Switching Circuit

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

Jensen, Kenneth A.↗

GRCop-84: A High Temperature Copper-based Alloy For High Heat Flux Applications

While designed for rocket engine main combustion chamber liners, GRCop-84 (Cu-8 at.% Cr-4 at.% Nb) offers potential for high heat flux applications in industrial applications requiring a temperature capability up to approximately 700 C (1292 F). GRCop-84 is a copper-based alloy with excellent elevated temperature strength, good creep resistance, long LCF lives and enhanced oxidation resistance. It also has a lower thermal expansion than copper and many other low alloy copper-based alloys. GRCop-84 can be manufactured into a variety of shapes such as tubing, bar, plate and sheet using standard production techniques and requires no special production techniques. GRCop-84 forms well, so conventional fabrication methods including stamping and bending can be used. GRCop-84 has demonstrated an ability to be friction stir welded, brazed, inertia welded, diffusion bonded and electron beam welded for joining to itself and other materials. Potential applications include plastic injection molds, resistance welding electrodes and holders, permanent metal casting molds, vacuum plasma spray nozzles and high temperature heat exchanger applications.

Ellis, David L.↗

Galium Electromagnetic (GEM) Thruster Concept and Design

We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagnetic pump. At a designated time, a pulsed discharge (approx. 10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx. 500 J), second-stage pulse which provides the primary electromagnetic (j x B) acceleration.

Polzin, Kurt A.↗

Gallium Electromagnetic (GEM) Thrustor Concept and Design

We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

Polzin, Kurt A.↗

Analysis and experimental study on formation conditions of large-scale barrier-free diffuse atmospheric pressure air plasmas in repetitive pulse mode

Atmospheric air diffuse plasmas have enormous application potential in various fields of science and technology. Without dielectric barrier, generating large-scale air diffuse plasmas is always a challenging issue. This paper discusses and analyses the formation mechanism of cold homogenous plasma. It is proposed that generating stable diffuse atmospheric plasmas in open air should meet the three conditions: high transient power with low average power, excitation in low average E-field with locally high E-field region, and multiple overlapping electron avalanches. Accordingly, an experimental configuration of generating large-scale barrier-free diffuse air plasmas is designed. Based on runaway electron theory, a low duty-ratio, high voltage repetitive nanosecond pulse generator is chosen as a discharge excitation source. Using the wire-electrodes with small curvature radius, the gaps with highly non-uniform E-field are structured. Experimental results show that the volume-scaleable, barrier-free, homogeneous air non-thermal plasmas have been obtained between the gap spacing with the copper-wire electrodes. The area of air cold plasmas has been up to hundreds of square centimeters. The proposed formation conditions of large-scale barrier-free diffuse air plasmas are proved to be reasonable and feasible.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Optimization of operation of a three-electrode gyrotron with the use of a flow-type calorimeter

Results are presented for measurements of microwave power of the Borets-75/0.8 gyrotron with recovery of residual electron energy, which were performed by a flow-type calorimeter. This gyrotron is a part of the ECR plasma heating complex put into operation in 2010 at the L-2M stellarator. The new calorimeter is capable of measuring microwave power up to 0.5 MW. Monitoring of the microwave power makes it possible to control the parameters of the gyrotron power supply unit (its voltage and current) and the magnetic field of the cryomagnet in order to optimize the gyrotron operation and arrive at maximum efficiency.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

On the importance of excited state species in low pressure capacitively coupled plasma argon discharges

In the past three decades, first principles-based fully kinetic particle-in-cell Monte Carlo collision (PIC/MCC) simulations have been proven to be an important tool for the understanding of the physics of low pressure capacitive discharges. However, there is a long-standing issue that the plasma density determined by PIC/MCC simulations shows quantitative deviations from experimental measurements, even in argon discharges, indicating that certain physics may be missing in previous modeling of the low pressure radio frequency (rf) driven capacitive discharges. In this work, we report that the energetic electron-induced secondary electron emission (SEE) and excited state atoms play an important role in low pressure rf capacitive argon plasma discharges. The ion-induced secondary electrons are accelerated by the high sheath field to strike the opposite electrode and produce a considerable number of secondary electrons that lead to additional ionizing impacts and further increase of the plasma density. Importantly, the presence of excited state species even further enhances the plasma density via excited state neutral and resonant state photon-induced SEE on the electrode surface. The PIC/MCC simulation results show good agreement with the recent experimental measurements in the low pressure range (1–10 Pa) that is commonly used for etching in the semiconductor industry. At the highest pressure (20 Pa) and driving voltage amplitudes 250 and 350 V explored here, the plasma densities from PIC/MCC simulations considering excited state neutrals and resonant photon-induced SEE are quantitatively higher than observed in the experiments, requiring further investigation on high pressure discharges.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Inductive Measurement of Plasma Jet Electrical Conductivity (MSFC Center Director's discretionary Fund)

Measurement of plasma jet electrical conductivity has utility in the development of explosively driven magnetohydrodynamic (MHD) energy converters as well as magnetic flux compression reaction chambers for nuclear/chemical pulse propulsion and power. Within these types of reactors, the physical parameter of critical importance to underlying MHD processes is the magnetic Reynolds number, the value of which depends upon the product of plasma electrical conductivity and velocity. Therefore, a thorough understanding of MHD phenomena at high magnetic Reynolds number is essential, and methods are needed for the accurate and reliable measurement of electrical conductivity in high-speed plasma jets. It is well known that direct measurements using electrodes suffer from large surface resistance, and an electrodeless technique is desired. To address this need, an inductive probing scheme, originally developed for shock tube studies, has been adapted. In this method, the perturbation of an applied magnetic field by a plasma jet induces a voltage in a search coil, which, in turn, can be used to infer electrical conductivity through the inversion of a Fredholm integral equation of the first kind. A 1-in.-diameter probe using a light-gas gun. Exploratory laboratory experiments were carried out using plasma jets expelled from 15-g shaped charges. Measured conductivities were in the range of 4 kS/m for unseeded octol charges and 26 kS/m for seeded octol charges containing 2-percent potassium carbonate by mass.

Turner, M. W.↗

Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

In manufacturing, etch profiles play a significant role in device patterning. Here, the authors present a study of the evolution of etch profiles of nanopatterned silicon oxide using a chromium hard mask and a CHF 3 /Ar atomic layer etching in a conventional inductively coupled plasma tool. The authors show the effect of substrate electrode temperature, chamber pressure, and electrode forward power on the etch profile evolution of nanopatterned silicon oxide. Chamber pressure has an especially significant role, with lower pressure leading to lower etch rates and higher pattern fidelity. The authors also find that at higher electrode forward power, the physical component of etching increases and more anisotropic etching is achieved. By carefully tuning the process parameters, the authors are able to find the best conditions to achieve aspect-ratio independent etching and high fidelity patterning, with an average sidewall angle of 87° ± 1.5° and undercut values as low as 3.7 ± 0.5% for five trench sizes ranging from 150 to 30 nm. Finally, they provide some guidelines to understand the impact of plasma parameters on plasma ion distribution and thus on the atomic layer etching process.

42 ENGINEERING↗