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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Enhanced thermoelectric efficiency in topological insulator Bi 2 Te 3 nanoplates via atomic layer deposition-based surface passivation

We report in-plane thermoelectric measurements of Bi 2 Te 3 nanoplates, a typical topological insulator with Dirac-like metallic surface states, grown by chemical vapor deposition. The as-grown flakes exposed to ambient conditions exhibit relatively small thermopowers around -34 μV/K due to unintentional surface doping (e.g., gas adsorption and surface oxidation). After removal of the unintentional surface doping and surface passivation by deposition of 30 nm of Al 2 O 3 using atomic layer deposition (ALD), the Seebeck coefficient of these flakes increases by a factor of 5× to -169 μV/K. We believe that the ALD-based surface passivation can prevent the degradation of the thermoelectric properties caused by gas adsorption and surface oxidation processes, thus, reducing the unintentional doping in the Bi 2 Te 3 and increasing the Seebeck coefficient. The high surface-to-volume ratio of these thin (~10 nm thick) nanoplates make them especially sensitive to surface doping, which is a common problem among nanomaterials in general. An increase in the sample resistance is also observed after the ALD process, which is consistent with the decrease in doping.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2 O 3 studied with deuterium

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2 O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2 O 3 is derived from its role as a hydrogen source for chemically passivating defects at SiO x ; Al 2 O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2 O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2 O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Plasma charge injection technology and its application to c-Si solar cells for field-effect passivation

A plasma charge injection technology applicable for field-effect passivation in crystalline silicon solar cells is discussed. The technology uses an inert-gas plasma (helium, argon, N 2 , etc.) as a charge source and a DC bias to extract desired charges from a remote plasma source. A charging model is proposed, and it gives a good guideline to determine a proper charging operation condition for a desired injection charge density. The technology can introduce electric charges into a nitride–oxide or oxide–nitride–oxide passivation stack in a few hundred milliseconds with a charge density equivalent to or higher than that of A l 2 O 3 in a range of 5 × 10 12 to 8 × 10 12 cm -2 . Most-like charge injection mechanisms are discussed for both negative and positive charging. This technology uses a cheap inert-gas plasma which does not cause any parasitic film deposition nor any corrosion inside the chamber during the charging operation and, thus, does not require regular maintenance for chamber cleaning, which leads to a very low cost of ownership. This charging technology is promising for a low-cost alternative to the complex A l 2 O 3 technology. This plasma charge injection can be another important application of the plasma technology among other well-known applications such as dry etching, thin-film deposition, sputtering, etc.

14 SOLAR ENERGY↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2023

Design of passive and structural conductors for tokamaks using thin-wall eddy current modeling

Abstract A new three-dimensional electromagnetic modeling tool ( ThinCurr ) has been developed using the existing PSI-Tet finite-element code in support of conducting structure design work for both the SPARC and DIII-D tokamaks. Within this framework a 3D conducting structure model was created for both the SPARC and DIII-D tokamaks in the thin-wall limit. This model includes accurate details of the vacuum vessel and other conducting structural elements with realistic material resistivities. This model was leveraged to support the design of a passive runaway electron mitigation coil (REMC), studying the effect of various design parameters, including coil resistivity, current quench duration, and plasma vertical position, on the effectiveness of the coil. The REMC is a non-axisymmetric coil designed to passively drive large non-axisymmetric fields during the plasma disruption thereby destroying flux surfaces and deconfining RE seed populations. These studies indicate that current designs should apply substantial 3D fields at the plasma surface during future plasma current disruptions as well as highlight the importance of having the REMC conductors away from the machine midplane in order to ensure they are robust to off-normal disruption scenarios.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Defect passivation of perovskites in high efficiency solar cells

Abstract Metal halide perovskite solar cells (PSCs) have enormous potential as the next-generation photovoltaic technology. Being solution-processed at relatively low temperatures, it is inevitable that crystallographic defects are formed in abundance during fabrication. Such defects may cause undesirable energy losses by non-radiative recombination to limit the performance of PSCs. More importantly, it has become apparent that defect activity is fundamentally responsible for the operational instability issues hindering the commercialization readiness of PSCs. It is therefore necessary to develop strategies to minimize defect formation and to passivate formed defects. Here, we discuss recent advances on such defect mitigation and passivation strategies. We especially emphasize on methodologies that are incorporated into state-of-the-art PSCs that have demonstrated world record efficiencies and long-term stability.

14 SOLAR ENERGY↗
DOE OSTI2014

Progress Towards Prognostic Health Management of Passive Components in Advanced Small Modular Reactors

Sustainable nuclear power to promote energy security and to reduce greenhouse gas emissions are two key national energy priorities. The development of deployable small modular reactors (SMRs) is expected to support these objectives by developing technologies that improve the reliability, sustain safety, and improve affordability of new reactors. Advanced SMRs (AdvSMRs) refer to a specific class of SMRs and are based on modularization of advanced reactor concepts. Prognostic health management (PHM) systems can benefit both the safety and economics of deploying AdvSMRs and can play an essential role in managing the inspection and maintenance of passive components in AdvSMR systems. This paper describes progress on development of a prototypic PHM system for AdvSMR passive components, with thermal creep chosen as the target degradation mechanism.

prognostics, small modular reactors, passive compo↗
DOE OSTI2018

Measuring Diode Resistivity of Passivated Contacts

A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

14 SOLAR ENERGY↗
DOE OSTI2020

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

14 SOLAR ENERGY↗
DOE OSTI2020

Luminescent Solar Concentrator Tandem-on-Silicon with above 700mV Passivated Contact Silicon Bottom Cell

Luminescent solar concentrator (LSC) tandem-on-silicon (Si) provides a route towards achieving higher than 30% overall efficiency which can overcome the theoretical efficiency limit of a single junction Si cell. Here, we present optical coupling and performance of high Voc passivated contact Si bottom cell for LSC tandem-on-Si where the top module consists of highly efficient luminophores and an array of micro InGaP cells embedded in a poly (lauryl methacrylate) waveguide. In this device configuration, InGaP cell area coverage is only ~0.5% of the total LSC area which significantly reduces the high cost III-V material usage. The performance of Si sub-cell is investigated under LSC spectrum and is compared against the measurement done under 1 um thick InGaP filter which mimics the spectrum seen by Si bottom cell in a conventional III-V/Si tandem. V oc of greater than 700 mV has been observed for the passivated contact Si bottom cell in these tandem applications.

14 SOLAR ENERGY↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗
DOE OSTI2020

Sulfurization as a promising surface passivation approach for both n- and p-type Si

Sulfur is shown to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25 ms are achieved for n- and p-type Si wafers, respectively, comparable to the industry standard thermal oxide and atomic layer deposited aluminum oxide passivation level. Surface characterization by x-ray photoelectron and emission spectroscopy reveals that sulfur is primarily bonded in a sulfide environment.

42 ENGINEERING↗
DOE OSTI2021

Submicron Thickness Characterization of Poly-Si Thin Films on Textured Surfaces by X-Ray Diffraction for Minimizing Parasitic Absorption in Poly-Si/SiO2 Passivating Contact Cells

Poly-Si/SiO2 passivating contacts have shown great potential for industry-relevant next-generation solar cells. Previous work has demonstrated an improved Jsc from dry reactive ion etching in an SF6 environment, using front metal grids as a self-aligned mask. Here, we show an effective method to measure the front poly-Si thickness on an alkaline textured surface using X-ray diffraction. The calculated thicknesses are compared with cross-section SEM analysis and Quokka simulation. We show that by thinning the front poly-Si from 200 nm to 60 nm, Jsc increases by 2.4 mA/cm2, leading to an absolute efficiency gain of 1.73%. Finally, we discuss possible reasons for the premature loss of passivation before the removal of all poly-Si.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells

In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.

14 SOLAR ENERGY↗
DOE OSTI2019

A 220-$\mu$ W –83-dBm 5.8-GHz Third-Harmonic Passive Mixer-First LP-WUR for IEEE 802.11ba

A 40-nm CMOS IEEE 802.11ba low-power wake-up receiver (LP-WUR) is presented. It receives 802.11ba messages generated by an 802.11 orthogonal frequency-division multiplexing (OFDM) transmitter operating at 5.8 GHz. The power consumption of the RF front-end is minimized by removing active RF gain stages and using a third harmonic passive mixer with a ring-based local oscillator (LO) operating at one-third of the RF frequency. The noise figure is 14 dB, taking advantage of a 1:3 transformer that provides passive voltage gain in front of the high switch loss mixer-first RF front-end, and matching across 5.5-5.8 GHz with <; -12 dB S11. Here, the receiver achieves a sensitivity of -83-dBm and -20-dB adjacent channel signal-tointerference ratio (SIR) while consuming 220 μW at a bit error rate (BER) of 10-3 and data rate of 62.5 kb/s, which shows the best sensitivity-power tradeoff among >3-GHz receivers.

42 ENGINEERING↗
DOE OSTI2024

Wideband Impedance Passivation of MMCs for Suppressing Harmonic Oscillations

Harmonic instability and associated oscillation events have become one of the main concerns in MMC-based HVdc systems. These oscillations can appear in the range from a few hundred hertz to several kilohertz, and the root cause is identified as delay-induced negative damping of MMC impedance appearing at the system resonance frequency. Here, this paper introduces a wideband impedance reshaping method through MMC control to eliminate such negative damping for both grid-following (GFL) and grid-forming (GFM) MMCs, which makes the MMC impedance completely passive from the second harmonic frequency upward, thus preventing all harmonic oscillations. First, simplified impedance models of MMCs are derived for the harmonic stability analysis and the impedance reshaping control design. Next, a passivity-based impedance reshaping method is presented, as well as practical considerations for its implementation. In addition, to maintain the MMC's disturbance ride-through capability, an adaptive activation scheme is developed, which enables the wideband impedance reshaping control only in the presence of harmonic oscillation events. The effectiveness of the proposed method is validated by frequency domain analysis and by electromagnetic transient (EMT) simulations of two typical MMC-based power systems.

17 WIND ENERGY↗