The distribution of redshifts in quasi-stellar objects, n-systems, and some radio and compact galaxies.
Absorption and emission redshift distribution in quasars, N systems and similar compact and radio galaxies
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Absorption and emission redshift distribution in quasars, N systems and similar compact and radio galaxies
Pressure induced microwave absorption in molecular N for various temperatures, determining dielectric loss, absorptivity and quadrupole moment
Separation of center of mass and rotational coordinates from N electron diatomic Schroedinger equation
Adrenal epinephrine and phenylethanolamine n- methyl transferase /PNMT/ activity in rat bearing transplantable pituitary tumor
Simultaneous HCN and HOH laser emission in pulsed discharge through mixture containing H, C, N and O
Quantitative analysis for N-acetylneuraminic acid by gas-liquid chromatography using trimethylsilyl derivative
Mass spectra peaks of N-Acyl-2-indolinols fragmentation processes upon electron impact, noting compounds predominance in open chain tautomer gas phase
Stripping and low-energy collisions of H atoms on O and N molecules, showing target ionization to projectile stripping ratio dependence on ionization potential
N wave propagation across nonuniform medium described by cloud or front layer, using geometrical optics
Mean life of D energy level in N IV, discussing Be I isoelectronic sequence
Transition probabilities of N I far UV multiplets, comparing experimental and theoretical results
Rate coefficient for primary process in removing molecular nitrogen in high vibrational levels from active nitrogen by N atoms
Exponential decay and mean lives of lowest P levels in N V measured with beam foil source, noting agreement with theories taking configuration interaction into account
Compensatory hypertrophy effects on adrenal phenylethanolamine n-methyl transferase /PNMT/ activity in rats
DENDRAL program used to construct all possible acyclic structural isomers of C, H, N and O
N-dimensional theorem for evaluating time continuous channel capacity or rate distortion function of random process
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Spectral results of p- and n-type silicon and germanium