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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Low temperature fluorination of Sr{sub 3}Fe{sub 2}O{sub 7-x} with polyvinylidine fluoride: An X-ray powder diffraction and Moessbauer spectroscopy study

Fluorination of the Ruddlesden Popper phase, Sr{sub 3}Fe{sub 2}O{sub 7-x} by heat treatment with polyvinylidine fluoride (PVDF) gives a range of novel oxide fluoride compounds. Fluorination with 1 mol equivalent PVDF leads to a filling of the normal Ruddlesden Popper structure anion sites and a material of composition Sr{sub 3}Fe{sub 2}O{sub 5+x}F{sub 2-x} (x Almost-Equal-To 0.28(4)) which contains both Fe{sup 4+} and Fe{sup 3+}. Increasing the amount of PVDF to 2 mol equivalent leads to an increase in anion content due to filling of half the interstitial sites within the structure, with iron being completely reduced to Fe{sup 3+} leading to a composition Sr{sub 3}Fe{sub 2}O{sub 4}F{sub 4}. An increase in the amount of PVDF to Almost-Equal-To 3 mol equivalent leads to a further increase in unit cell volume, attributed to complete filling of the interstitial sites and a composition Sr{sub 3}Fe{sub 2}O{sub 3}F{sub 6}. {sup 57}Fe Moessbauer spectra in the temperature range 10-300 K demonstrated the complexity of the magnetic interactions in each of the three phases which reflect different local compositions of oxygen and fluorine around the iron ions thus influencing the superexchange pathways. - Graphical abstract: Low temperature (375 Degree-Sign C) fluorination of Sr{sub 3}Fe{sub 2}O{sub 7-x} with poly(vinylidene fluoride) leads to the production of three new Ruddlesden Popper oxide fluorides with progressive filling of the anion sites within the structure. Highlights: Black-Right-Pointing-Pointer The fluorination of Sr{sub 3}Fe{sub 2}O{sub 7-x} using PVDF. Black-Right-Pointing-Pointer The control of the fluorine content with amount of PVDF used. Black-Right-Pointing-Pointer The synthesis of three new Fe based oxide fluorides. Black-Right-Pointing-Pointer The identification of the structures of these oxide fluorides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Defect and phase stability of solid solutions of Mg{sub 2}X with an antifluorite structure: An ab initio study

First principles calculations are done for Mg{sub 2}X (X=Si, Ge or Sn) antifluorite compounds and their solid solutions in order to investigate their pseudo-binary phase diagram. The formation energies of the end-member compounds agree qualitatively with the experiments. For X=Si and Ge, there is a complete solubility, but we observe a miscibility gap in the pseudo-binary phase diagram Mg{sub 2}Si-Mg{sub 2}Sn. This agrees with the most recent experiments and phase diagram assessments. Calculated electronic properties of Mg{sub 2}Si{sub 1-x}Sn{sub x} alloys qualitatively agree with experiments and in particular the energy bandgap decreases when Si is substituted by Sn. Supercell calculations are also done in order to determine the most stable defects and the doping induced by these defects in the three end-member compounds. We find that the intrinsic n-doping in pure Mg{sub 2}Si can be attributed to the presence of magnesium atoms in interstitial positions. In Mg{sub 2}Ge and Mg{sub 2}Sn, since other defects are stable, they can be also of p-type. - Graphical abstract: Evidence of a miscibility gap from the plot of the formation energy vs x{sub Si} (silicon content) for the solid solutions Mg{sub 2}Si-Mg{sub 2}Sn. Highlights: Black-Right-Pointing-Pointer First-principles study of the stability of Mg{sub 2}Si-Mg{sub 2}X alloys (X=Ge or Sn) and their defects. Black-Right-Pointing-Pointer Mg{sub 2}Si-Mg{sub 2}Ge alloys form a complete series of solid solutions. Black-Right-Pointing-Pointer Miscibility gap is found in Mg{sub 2}Si-Mg{sub 2}Sn alloys. Black-Right-Pointing-Pointer Interstitial defects are more stable in Mg{sub 2}Si and induce n-doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Point defects diagrams for pure and doped copper oxide Cu{sub 2{+-}{delta}}O in the temperature range of 873-1473 K

Point defects diagrams for the Cu{sub 2{+-}{delta}}O, both pure and doped with M{sup 2+} metal ions with all the types of defects in the cation sublattice considered are presented in this work. The calculations of the diagrams were performed by a novel method. The calculations were based on the data from the results of the studies of the deviation from stoichiometry and the electrical conductivity in the temperature range of 873-1473 K. The values of {Delta}G{sup o} of the formation of Frenkel-type defects, of copper vacancies, and of interstitial copper atoms were determined and their temperature dependence. It was shown that character of the dependence of the sum of concentrations of electronic defects ([h{sup Bullet }]+b[e Prime ]) on p{sub O{sub 2}} is fully consistent with its dependence of the electrical conductivity. Their mobility ({mu}{sub e}/{mu}{sub h}=b), vary from 1300 to 30. The dope M{sup 2+} increases the concentration of electrons and shifts the minimum of electrical conductivity toward higher oxygen pressures. - Graphical abstract: This work presents point defects diagrams for the Cu{sub 2{+-}{delta}}O, with all the types of defects in the cation sublattice considered. Highlights: Black-Right-Pointing-Pointer The point defects diagrams. Copper oxide Cu{sub 2{+-}{delta}}O, for pure and M{sup 2+} doped. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation of Frenkel-type defects were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation QUOTE QUOTE of singly-ionized copper vacancies were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation of electroneutral copper vacancies were determined. Black-Right-Pointing-Pointer The values of {Delta}G{sup o} of the formation and of interstitial copper atoms were determined.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Novel visible-light AgBr/Ag₃PO₄ hybrids photocatalysts with surface plasma resonance effects

Three kinds of AgBr/Ag₃PO₄ hybrids were synthesised via an anion-exchange precipitation method and characterised by XRD, XPS, SEM, EDS, and UV–vis. The results showed that AgBr/Ag₃PO₄ hybrids displayed much higher photocatalytic activities than single Ag₃PO₄ or AgBr under visible light (λ>420 nm), and ·OH and h⁺ were the major active species during the degradation process. Considering interstitial ions Agᵢ⁺ on lattice gap of AgBr are easy to become sliver particle, we deduced the possible photocatalytic mechanism could be ascribed to the synergistic effects of the appropriate valence band position of Ag₃PO₄ and AgBr, surface plasmon resonance effect of Ag⁰, reactive radical species Br⁰, and the Ag vacancy on the surface of catalysts. - Graphical abstract: The optical absorption and structural morphology of the as-prepared AgBr@Ag₃PO₄ photocatalyst using an anion-exchange precipitation method are conductive to the photocatalytic degradation of organics in water. Highlights: • Novel AgBr/Ag₃PO₄ hybrids are synthesised by a facile method. •AgBr/Ag₃PO₄ hybrids show excellent photocatalytic activities under visible light. • Interstitial ions are in favour of the formation of Ag particle. • Surface plasmon resonance effect plays a key factor for light absorption. • The photocatalytic mechanism for AgBr/Ag₃PO₄ hybrids is studied.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Diffusion model of the non-stoichiometric uranium dioxide

Uranium dioxide (UO{sub 2}), which is used in light water reactors, exhibits a large range of non-stoichiometry over a wide temperature scale up to 2000 K. Understanding diffusion behavior of uranium oxides under such conditions is essential to ensure safe reactor operation. The current understanding of diffusion properties is largely limited by the stoichiometric deviations inherent to the fuel. The present DICTRA-based model considers diffusion across non-stoichiometric ranges described by experimentally available data. A vacancy and interstitial model of diffusion is applied to the U–O system as a function of its defect structure derived from CALPHAD-type thermodynamic descriptions. Oxygen and uranium self and tracer diffusion coefficients are assessed for the construction of a mobility database. Chemical diffusion coefficients of oxygen are derived with respect to the Darken relation and migration energies of defects are evaluated as a function of stoichiometric deviation. - Graphical abstract: Complete description of Oxygen–Uranium diffusion as a function of composition at various temperatures according to the developed Dictra model. - Highlights: • Assessment of a uranium–oxygen diffusion model with Dictra. • Complete description of U–O diffusion over wide temperature and composition range. • Oxygen model includes terms for interstitial and vacancy migration. • Interaction terms between defects help describe non-stoichiometric domain of UO{sub 2±x}. • Uranium model is separated into mobility terms for the cationic species.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Fergusonite-type CeNbO{sub 4+δ}: Single crystal growth, symmetry revision and conductivity

Large fergusonite-type (ABO{sub 4}, A=Ce, B=Nb) oxide crystals, a prototype electrolyte composition for solid oxide fuel cells (SOFC), were prepared for the first time in a floating zone mirror furnace under air or argon atmospheres. While CeNbO{sub 4} grown in air contained CeNbO{sub 4.08} as a minor impurity that compromised structural analysis, the argon atmosphere yielded a single phase crystal of monoclinic CeNbO{sub 4}, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy conducted under argon found that stoichiometric CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. - Graphical abstract: Large fergusonite-type CeNbO{sub 4} crystals were prepared for the first time in a floating zone mirror furnace. Crystal growth in an argon atmosphere yielded a single phase monoclinic CeNbO4, as confirmed by selected area electron diffraction, powder and single crystal X-ray diffraction. The structure was determined in the standard space group setting C12/c1 (No. 15), rather than the commonly adopted I12/a1. AC impedance spectroscopy found CeNbO{sub 4} single crystals showed lower conductivity compared to CeNbO{sub 4+δ} confirming interstitial oxygen can penetrate through fergusonite and is responsible for the higher conductivity associated with these oxides. Highlights: • Preparation of single crystals of CeNbO{sub 4} using a floating zone mirror furnace. • Correction to the crystal symmetry of the monoclinic form of CeNbO{sub 4}. • Report the conductivity of a single crystal of CeNbO{sub 4}.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films

Cadmium oxide thin films doped with different amounts of chromium and annealed in hydrogen atmosphere have been grown on glass substrates by means of physical vapour deposition (PVD) method. The structural, electrical, and optical properties of the prepared Cr-doped CdO (CdO:Cr–H) films were systematically studied. The structural investigations show that the incorporated Cr ions mainly occupied locations in interstitial positions of CdO lattice. The bandgap engineer by Cr incorporation and hydrogenation were studied. The variations of the electrical parameters of CdO:Cr–H films with Cr incorporation and hydrogenation were investigated. It was established that among the investigated samples, the largest mobility and conductivity were measured with 1.5%:Cr–H film. Therefore, hydrogenated CdO:Cr films can be effectively used in different applications of near infrared-transparent-conducting-oxide (NIR-TCO). - Graphical abstract: Optoelectronic properties of synthesised chromium-doped CdO thin films. It was established that the largest mobility (53.4 cm{sup 2}/V.s) and conductivity (2136.8 S/cm) were measured in 1.5%:Cr–H doped CdO film. Therefore, such films can be effectively used in near infrared-transparent-conducting-oxide (NIR-TCO). - Highlights: • The properties of CdO films annealed in H{sub 2} gas were systematically studied. • Cr{sup 3+} ions most likely occupied interstitial locations in CdO lattice and as donors. • Improvement of conductivity parameters with Cr doping and H annealing. • Bandgap narrowing observed with Cd-doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Structural and spectroscopic studies of Ba{sub 2}Y{sub 1−δ}UO{sub 6+x}

A combination of S-XRD and NPD demonstrate the structure of Ba{sub 2}Y{sub 0.879}UO{sub 6+x} to be monoclinic in space group I2/m. That the U is hexavalent is evident from the U L{sub 2}-edge XANES measurements. This appears to be a rare example of a double perovskite containing vacancies at the octahedral B-sites and interstitial oxygen defects, which combine to stabilise hexavalent U and appears to be a consequence of the preparation of the sample in air. The Y vacancies, coupled with anion disorder, results in a distortion of the BO{sub 6} octahedra. - Graphical abstract: The structure of Ba{sub 2}Y{sub 0.879}UO{sub 6+x} is shown to be a rare example of a double perovskite containing vacancies at the octahedral B-sites and interstitial oxygen defects. - Highlights: • Structure of Ba{sub 2}Y{sub 0.879}UO{sub 6+x} refined. • U L-edge XANES demonstrates the U is hexavalent. • Rare example of a perovskite containing vacancies at the octahedral B-site. • Y vacancies result in a distortion of the BO{sub 6} octahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Cu- and Zr-based metal organic frameworks and their composites with graphene oxide for capture of acid gases at ambient temperature

Highlights: • Incorporation of GO in Cu- and Zr-based MOFs resulted in additional porosity at the interstitial MOF/GO spaces. • The UiO-66-NH{sub 2}/GO composite exhibited enhanced CO{sub 2} capacity at higher pressures. • CO{sub 2}/N{sub 2} selectivity of HKUST-1/GO was higher compared to pure HKUST-1. • The HKUST-1 crystallites in the presence of GO exhibited enhanced H{sub 2}S sorption kinetics. • The UiO-66 based adsorbents were more stable in humidity conditions than the HKUST-1 based ones. - Abstract: Capture of acid gases (CO{sub 2} and H{sub 2}S) by liquid solvent absorption is the common industrial practice, yet capture relying on solid adsorbents is increasingly gaining interest as potential alternative towards less energy-demanding operations. Herein, we developed and examined various metal organic frameworks (MOFs) bearing Cu- and Zr- metal clusters and their composites with graphene oxide (GO), and evaluated their performance for CO{sub 2} and H{sub 2}S adsorption. Specifically, UiO-66, UiO-66-NH{sub 2}, HKUST-1, and their GO composites were grown, subjected to structural, morphological, and textural characterization, and subsequently evaluated for their adsorption capacity and selectivity at ambient temperature. The crystallinity of the parent MOFs was preserved upon in-situ growth of the MOF/GO composites, while incorporation of GO yielded uniformly-shaped and well-dispersed MOF crystals resulting in enhanced sorption kinetics, and increased the pore volume compared to pure MOFs due to additional porosity formed in the interstitial spaces between the MOF crystallites and the GO flakes. To this extent, the interplay between additional porosity and pore functionalities in the competitive CO{sub 2} and N{sub 2} adsorption was investigated. UiO-66-NH{sub 2} exhibited enhanced CO{sub 2} capacity (3.07 mmol/g at 25 °C and 4 bar) and the highest CO{sub 2}/N{sub 2} selectivity (167 at 1 bar) among the tested MOFs, due to the presence of the amine functional groups in the organic linker that enhanced affinity with CO{sub 2}. At increased pressures, the UiO-66-NH{sub 2}/GO composite exhibited higher CO{sub 2} capacity compared to pure UiO-66-NH{sub 2}, which is attributed to activation of the additional porosity between the MOF crystallites and the GO layers. HKUST-1/GO selectivity was also enhanced compared to HKUST-1 in all pressures tested. Under humid environment, the UiO-66 based structures were relatively stable in contrast to the HKUST-1 ones that underwent gradual degradation. These composites offer functionalization tunability due to the presence of both MOF and GO counterparts for targeted gas capture applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Synthesis and structure of Sr 14 Zn 1+ x As 11 and Eu 14 Zn 1+ x As 11 (x ≤ 0.5). New members of the family of pnictides isotypic with Ca 14 AlSb 11 , exhibiting a new type of structural disorder

Systematic investigation of the ternary systems A–Zn–As (A = Sr, Eu) led to the discovery of two new ternary phases, Sr 14 Zn 1+x As 11 and Eu 14 Zn 1+x As 11 (x ≤ 0.5). Both title compounds were structurally characterized by single-crystal X-ray diffraction. The basic structure of these new arsenides is akin to that of the numerous other pnictides adopting the tetragonal Ca 14 AlSb 11 structure type (space group I4 1 / acd (No. 142); Z = 8). The main difference is the presence of an interstitial Zn atom, located in a nearly trigonal-planar coordination environment of three As atoms. Four such fragments share common edges with the regular ZnAs 4 tetrahedron, to form an unusual new structural unit with the formula [Zn 1+x Sb 8] . The small uptake of additional zinc is needed to augment the overall valence electron count, thereby driving the system to an electronically charge-balanced state. Upon partial substitution of the nominally divalent Sr with a trivalent La, the equivalent of electron doping, the structure rids itself of the interstitial zinc, as demonstrated on the example of Sr 13.30(2) La 0.70 ZnAs 11 , which was also structurally characterized by single-crystal X-ray diffraction as part of this study. In conclusion, electronic structure calculations for the idealized composition Sr 14 ZnAs 11 confirm the speculated electron-deficient assignment, and suggest intrinsic semiconducting behavior for the one-electron richer Sr 14 Zn 1+x As 11 (x = 0.5) and Sr 13 LaZnAs 11 , respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Characterization of microstructure in hydrogen ion irradiated vanadium at room temperature and the microstructural evolution during post-irradiation annealing

The microstructure of pure vanadium after hydrogen ion irradiation at room temperature to a fluence of 1 × 10{sup 17} ions/cm{sup 2} (and 5 × 10{sup 16} ions/cm{sup 2}) was investigated by transmission electron microscopy (TEM). Small dislocation loops (black spots) and cavities are formed after the irradiation. The nature and Burgers vector of dislocation loops formed in vanadium was characterized using g·b technique and inside–outside method. Interstitial dislocation loops with Burgers vector of 1/2 < 111 > predominantly formed with less than 10% of 1/2 < 110 > type. No < 100 > type or vacancy type dislocation loop formed. The microstructural evolution during the annealing process was also studied. Density and size of dislocation loops changed sharply when the annealing temperature was lifted up to 450 °C. When the annealing temperature was higher than 500 °C, bubble coalescence occurred with some large hydrogen bubbles formed. - Highlights: • Interstitial dislocation loops with Burgers vector of 1/2<111> were predominant. • Less than 10% of 1/2<110> dislocation loops were present in pure vanadium. • No <100> or vacancy type loops were present in pure vanadium. • Density and size of dislocation loops changed sharply at temperature above 450 °C. • Bubble coalescence occurred when annealing temperature was higher than 500 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A theoretical study of solid solution strengthening in the refractory medium entropy alloy Nb 45 Ta 25 Ti 15 Hf 15

The refractory medium-entropy alloy (RMEA) Nb 45 Ta 25 Ti 15 Hf 15 exhibits exceptional tensile ductility and fracture toughness at ambient temperature, but its engineering applications are limited by a lack of high temperature strength. Using a machine-learning interatomic potential (MLIP) with near-density functional theory (DFT) accuracy, we conducted molecular dynamics (MD) and statics simulations of the behavior of dislocations with both screw and edge characters. We also analyze experimentally measured yield strengths using the Rao-Suzuki model and the Maresca-Curtin model modified to include a temperature-dependent shear modulus and a bulk modulus-dependent misfit volume, thereby uncovering the mechanisms underlying the yielding of this RMEA. Compared with the published experimental yield strength, the models parameterized by the MLIP effectively reproduce the experimental results over a wide temperature range. The models and MD simulations indicate that yielding is governed by screw dislocations, with dipole dragging as the dominant mechanism. In MD simulations, we observed a potential softening mechanism not considered by the Rao-Suzuki screw model: slow migration of interstitial jogs along the dislocation core, which could lead to the annihilation of vacancy and interstitial jog pairs by their combination.

BCC complex concentrated alloys↗
DOE OSTI2011

Hydrothermal synthesis of hierarchical titanium silicalite-1 using single template

Graphical abstract: . Hierarchical nano-crystalline TS-1 can be simply synthesized using tetrapropylammonium hydroxide as single template in presence of a 'seed' gel. Research highlights: {yields} Hierarchical nano-crystalline TS-1 can be directly synthesized using tetrapropylammonium hydroxide (TPAOH) as single template in presence of a 'seed' gel. The presence of seed favored the aggregation of TS-1 nanoparticles and thus lead to the interstitial voids that contributed to secondary mesoporosity. The presence of seed could accelerate the crystallization rate and reduce the amount of template, TPAOH. -- Abstract: Hierarchical nano-crystalline TS-1 can be directly synthesized using tetrapropylammonium hydroxide (TPAOH) as single template in the presence of a 'seed' gel. The hierarchical nano-crystalline TS-1 was characterized by scanning electron microscopy, transmission electron microscopy, powder X-ray diffraction, UV-Vis diffuse reflectance spectroscopy and nitrogen adsorption-desoprtion. Compared with the conventional TS-1, the hierarchical nano-crystalline TS-1 contained an additional porosity including supermicro/mesopores, which attributed to the interstitial voids existing between the nanocrystals. The secondary porosity in the TS-1 material provided an enhanced external surface area and high mesopore volume in favor of fast diffusion of both reactants and products, which resulted in an enhanced activity in the epoxidation of bulky molecules cyclohexene using aqueous H{sub 2}O{sub 2} solution as oxidant.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Self-assembly of 2D sandwich-structured MnFe{sub 2}O{sub 4}/graphene composites for high-performance lithium storage

Highlights: • MFO/GN composites were synthesized by a facile in situ solvothermal approach. • The MFO microspheres are sandwiched between the graphene layers. • Each MFO microsphere is an interstitial cluster of nanoparticles. • The MFO/GN electrode exhibits an enhanced cyclability for Li-ion batteries anodes. - Abstract: In this study, two-dimensional (2D) sandwich-structured MnFe{sub 2}O{sub 4}/graphene (MFO/GN) composites are synthesized by a facile in situ solvothermal approach, using cetyltrimethylammonium bromide (CTAB) as cationic surfactant. As a consequence, the nanocomposites of MFO/GN self-assembled into a 2D sandwich structure, in which the interstitial cluster structure of microsphere-type MnFe{sub 2}O{sub 4} is sandwiched between the graphene layers. This special structure of the MFO/GN composites used as anodes for lithium-ion batteries will be favorable for the maximum accessible surface of electroactive materials, fast diffusion of lithium ions and migration of electron, and elastomeric space to accommodate volume changes during the discharge–charge processes. The as-synthesized MFO/GN composites deliver a high specific reversible capacity of 987.95 mA h g{sup −1} at a current density of 200 mA g{sup −1}, a good capacity retention of 69.27% after 80 cycles and excellent rate performance for lithium storage.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photon up-conversion production in Tb{sup 3+}–Yb{sup 3+} co-doped CaF{sub 2} phosphors prepared by combustion synthesis

Graphical abstract: Up-conversion luminescence from Tb{sup 3+} obtained by energy transfer from Yb{sup 3+} pairs in CaF{sub 2} powder prepared by combustion synthesis. - Highlights: • Calcium fluoride (CaF{sub 2}) powders were prepared by combustion synthesis. • Rare-earth ions doped in this material were found in interstitial sites. • Cooperative up-conversion was observed in Tb{sup 3+}:Yb{sup 3+}:CaF{sub 2} powder. • Energy transfer between Tb{sup 3+} and pairs of Yb{sup 3+} was analyzed using rate equations. - Abstract: Calcium fluoride (CaF{sub 2}) crystalline powders were successfully prepared by the combustion synthesis method. The powder material containing luminescent rare-earth ions, more specifically terbium (Tb{sup 3+}) and ytterbium (Yb{sup 3+}), was studied by X-ray diffraction, scanning electronic microscopy and optical spectroscopy. These ions are allocated in charge compensated interstitial positions of tetragonal (C{sub 4v}) and trigonal (C{sub 3v}) symmetry sites of the cubic (O{sub h}) CaF{sub 2} lattice. Up-conversion (UC) luminescence in Tb{sup 3+} was achieved using a low power diode laser operating at 975 nm. Tb{sup 3+} is insensitive to near-infrared radiation but UC can be achieved via energy transfer from pairs of Yb{sup 3+} ions to Tb{sup 3+} ions. The UC luminescence dynamics of Tb{sup 3+} was used to study the energy transfer mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Irradiation-induced segregation at dislocation loops in CoCrFeMnNi high entropy alloy

To understand the redistribution of alloying elements in high entropy alloys under irradiation, we irradiated a CoCrFeMnNi alloy with 1 MeV Kr ions at room temperature and at 500°C, and characterized with atom probe tomography and transmission electron microscopy. At 500°C, Co and Ni were enriched around the interstitial, faulted and perfect, dislocation loops resulted from the ion irradiation. In contrast, no segregation was observed at room temperature. The inverse Kirkendall effect through vacancy flux, as opposed to the interstitial binding mechanism, was the primary underlying process attributing to the observed segregation. In addition, a ring-shaped segregation pattern was observed at the faulted dislocation loops, indicating a non-equilibrium nature of the defect clustering and solute segregation process in CoCrFeMnNi under irradiation at high temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Determination of recombination radius in Si for binary collision approximation codes

Displacement damage caused by ions or neutrons in microelectronic devices can have significant effect on the performance of these devices. Therefore, it is important to predict not only the displacement damage profile, but also its magnitude precisely. Analytical methods and binary collision approximation codes working with amorphous targets use the concept of displacement energy, the energy that a lattice atom has to receive to create a permanent replacement. It was found that this “displacement energy” is direction dependent; it can range from 12 to 32 eV in silicon. Obviously, this model fails in BCA codes that work with crystalline targets, such as Marlowe. Marlowe does not use displacement energy; instead, it uses lattice binding energy only and then pairs the interstitial atoms with vacancies. Then based on the configuration of the Frenkel pairs it classifies them as close, near, or distant pairs, and considers the distant pairs the permanent replacements. Unfortunately, this separation is an ad hoc assumption, and the results do not agree with molecular dynamics calculations. After irradiation, there is a prompt recombination of interstitials and vacancies if they are nearby, within a recombination radius. In order to implement this recombination radius in Marlowe, we used the comparison of MD and Marlowe calculation in a range of ion energies in single crystal silicon target. As a result, the calculations showed that a single recombination radius of ~7.4 Å in Marlowe for a range of ion energies gives an excellent agreement with MD.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗