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At least 685 records · Page 38

Local Inversion Symmetry Breaking and Thermodynamic Evidence for Ferrimagnetism in Fe 3 GaTe 2

The layered compound Fe 3 GaTe 2 is attracting attention due to its high Curie temperature, low dimensionality, and the presence of topological spin textures above room temperature, making Fe 3 GaTe 2 a good candidate for applications in spintronics. Here, in this study, we show, through transmission electron microscopy (TEM) techniques, that Fe 3 GaTe 2 single crystals break local inversion symmetry while maintaining global inversion symmetry according to X-ray diffraction. Coupled to the observation of Néel skyrmions via Lorentz-TEM, our structural analysis provides a convincing explanation for their presence in centrosymmetric materials. Magnetization measurements as a function of the temperature displays a sharp first-order thermodynamic phase-transition leading to a reduction in the magnetic moment. This implies that the ground state of Fe 3 GaTe 2 is globally ferrimagnetic and not a glassy magnetic state composed of ferrimagnetic, and ferromagnetic domains as previously claimed. Neutron diffraction studies indicate that the ferromagnetic to ferrimagnetic transition upon reducing the external magnetic field is associated with a change in the magnetic configuration/coupling between Fe1 and Fe2 moments. We observe a clear correlation between the hysteresis observed in both the skyrmion density and the magnetization of Fe 3 GaTe 2 . This indicates that its topological spin textures are affected by the development of ferrimagnetism upon cooling. Observation, via magnetic force microscopy, of magnetic bubbles at the magnetic phase boundary suggests skyrmions stabilized by the competition among magnetic phases and distinct exchange interactions. Our study provides an explanation for the observation of Néel skyrmions in centrosymmetric systems, while exposing a correlation between the distinct magnetic phases of Fe 3 GaTe 2 and topological spin textures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exploring Quantized Axion Electrodynamics in Magnetic Topological Insulator Multilayer Heterostructures (Final Technical Report)

The current program is focusing on investigating the properties of the high Chern number quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) multilayer heterostructures and the exploration of the topological magnetoelectric effect in thick magnetic TI films/heterostructures. Our program includes both experimental and theoretical efforts on this topic.

36 MATERIALS SCIENCE↗

Interfacial spin–orbit torques

Spin–orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin–orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin–orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin–orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin–orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. In this study, we show the relationship between different interface transport parameters within the same model. For charges and spins flowing perpendicular to the interface, interfacial spin–orbit coupling both modifies the mixing conductance of the magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin–orbit coupling gives rise to torques described by spin–orbit filtering, spin swapping, and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Anomalous Nernst and Seebeck coefficients in epitaxial thin film Co 2 MnAl x Si 1 - x and Co 2 FeAl

Here we have measured the Seebeck and anomalous Nernst coefficients and corresponding transverse and longitudinal thermoelectric conductivities from 2 to 400 K in thin film (thickness t ~10 nm) Co 2 MnAl x Si 1-x (0 ≤ x ≤ 1) and Co 2 FeAl grown by molecular beam epitaxy (MBE). A large (-14 A m -1 K -1 at 300 K) anomalous component of the transverse thermoelectric conductivity is observed in Co 2 MnAl, especially as contrasted to Co 2 MnSi (0.28 A m -1 K -1 at 300 K). This enhancement is likely due to Weyl points close to the Fermi level of Co 2 MnAl which disappear as x decreases.

36 MATERIALS SCIENCE↗

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Here, in this work, the optical efficiency of III-nitride blue micro-LEDs (μLEDs) ranged from 5 × 5 to 60 × 60 μm 2 with different sidewall treatments at low current density range was investigated. The results showed dielectric sidewall passivation using atomic layer deposition (ALD) has superior optical enhancement compared to conventional RF sputtering, where most of the enhancement occurred at low current density range. Additionally, the use of ALD sidewall passivation and chemical treatment offered significant efficiency improvement for different sizes of μLEDs at operating less than 1 A cm −2 and the devices without sidewall treatments did not emit light. The effect of sidewall treatments to the effective Shockley–Read–Hall (SRH) nonradiative recombination coefficient, or the effective A coefficient from the ABC model, was estimated. The effective SRH nonradiative recombination coefficient was suppressed by two orders of magnitude for devices with sidewall treatments compared to devices without sidewall passivation.

Wong, Matthew S.↗

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn 3 X, X = Sn, Ge

The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn 3 X(X = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn 3 X(X = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn 3 X(X = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn 3 Sn and Mn 3 Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn 3 Ge and planar Hall effect in Mn 3 Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Global Non-axisymmetric Hall Instabilities in a Rotating Plasma

Non-axisymmetric, flow-driven instabilities in the incompressible Hall-MHD model are studied in a differentially rotating cylindrical plasma. It is found that, in the Hall-MHD regime, both whistler waves and ion-cyclotron waves can extract energy from the flow shear, resulting in two distinct branches of global instability. The non-axisymmetric whistler modes grow significantly faster than non-axisymmetric, ideal MHD modes. A discussion of the global whistler instability mechanism is presented in the large-ion-skin-depth, “electron-MHD” limit. When the magnetic field is azimuthal, a subset of the whistler modes having zero axial wave number are uncovered to be destabilized by the “corotation amplifier” mechanism. It is observed that the effect of the Hall term on the non-axisymmetric modes can be appreciable when d i is on the order of a few percent of the width of the cylindrical annulus. Distinct global modes emerge in the strong Hall-MHD regime at significantly stronger magnetic fields than those required for unstable global MHD modes, as the Hall effect weakens the stabilizing “field-line bending” by decoupling ion motion from the magnetic field. These global non-axisymmetric modes may play an important role in weakly ionized accretion disks.

Alfven waves↗

Estimation of micro-Hall-Petch coefficients for prismatic slip system in Mg-4Al as a function of grain boundary parameters

Grain size strengthening, referred to as the Hall-Petch effect, is a common strategy to improve the yield strength of magnesium (Mg) alloys. Several experimental studies have reported that the Hall-Petch slope strongly depends on the texture of the alloy. This effect arises from altering grain boundaries (GBs) resistance to different slip systems to transfer across adjacent grains. The grain boundary barrier strength of certain grain boundaries to basal slip, referred to as basal micro-Hall-Petch, was investigated in the previous work. Here in this study, the micro-Hall-Petch coefficient values for the prismatic slip $(k^{prismatic}_{μ})$ in Mg-4Al and their correlation with the grain boundary parameters were investigated. An experimental method was developed to initiate the prismatic slip band at low-stress levels. High-resolution electron backscatter diffraction (HR-EBSD) was used to measure the residual stress tensor, from which the resolved shear stress ahead of blocked prismatic slip bands was computed for seven different grain boundaries. $(k^{prismatic}_{μ})$ values for each individual GB were calculated by coupling the stress profile information with a continuum dislocation pile-up model. The $(k^{prismatic}_{μ})$ values vary from 0.138 MPa.m 1/2 to 0.685 MPa. m 1/2 which are almost three times larger than the calculated values for the basal micro-Hall-Petch. The $(k^{prismatic}_{μ})$ values were correlated with the GB parameters, and a functional relationship depending on the two most effective angles, the angle between the traces of the slip planes on the GB plane ($\phi$) and the angle between incoming and outgoing slip directions (κ), was proposed to estimate the Hall-Petch barrier for prismatic slip system. The work provides coefficients that can be supplied as input to crystal plasticity models to couple the effect of texture and grain size effectively.

36 MATERIALS SCIENCE↗

Surface magnetic anisotropy-mediated spin Hall magnetoresistance and spin Seebeck effects in a YIG/Pt heterostructure

The role of magnon-phonon coupling in the low-temperature behavior of the spin Seebeck effect (SSE) in YIG/Pt has been puzzling for more than a decade. Here, to elucidate the origin of the anomalous peak around 80 K, we investigate the temperature evolution of SSE, spin Hall magnetoresistance (SMR), and magnetic anisotropy in the same YIG/Pt heterostructure. We find that these effects, along with magnetic damping, show the peaks at the same temperature (~80 K). This simultaneous occurrence, where no heat is applied in the case of SMR, rules out the phonon-magnon drag related origin of SSE in the YIG/Pt system. We further show that the intrinsic surface anisotropy behavior in YIG is responsible for controlling the SSE, SMR, and magnetic damping in the YIG/Pt structure. Our findings not only help to understand these effects fundamentally but also provide an effective way for improving them by manipulating the surface magnetic anisotropy for spin caloritronic applications.

36 MATERIALS SCIENCE↗

Anisotropic quantum Hall states in the presence of interactions with fourfold rotational symmetry

We study the effects of anisotropic interactions in the quantum Hall effect in the presence of a fourfold discrete rotational (C 4 ) symmetry. Employing the density matrix renormalization group technique on an infinite cylinder geometry (iDMRG), we calculate the anisotropy response of the Laughlin state at ν = 1/3 and the composite-Fermi liquid (CFL) state at ν = 1/2. We find that the anisotropy transferred from the interaction potential to the ν = 1/3 state is stronger when compared with the complementary case of an anisotropic band. Further, the strength of anisotropy reduces as the interaction is made shorter ranged. Quite surprisingly, at ν = 1/2, the deformation in the CF Fermi surface changes sign as the interaction range is reduced. Our results imply that the short-distance and long-distance parts of the interaction potential have opposite effects on the CFL state in the presence of C 4 -symmetric anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Implicit highly-coupled single-ion Hall-MHD formulation for hybrid particle-in-cell codes

The rudiments of a particle-based single-fluid two-temperature magnetohydrodynamic (MHD) algorithm have been outlined in Thoma et al. (2013). The extension of this algorithm to include the effect of Hall physics is described in this paper. An implicit leapfrog version of the algorithm, which allows timesteps large compared to the resistive decay time and other relevant timescales, has recently been added to a hybrid particle-in-cell code. In standard MHD the Hall term in the generalized Ohm’s law can often be neglected when the Hall parameter is small. This term must, however, be retained in regimes where it is non-negligible. The retention of displacement current in Maxwell’s equations avoids the numerical difficulties associated with the whistler mode, which are encountered in standard explicit Hall-MHD codes, and allows the algorithm to be incorporated into hybrid particle-in-cell codes, for which particles may migrate from a kinetic to fluid to MHD description based upon local ambient plasma conditions. A highly-coupled implicit Hall-MHD formalism is presented, in which displacement current can either be retained or neglected. Even when displacement current is neglected, the highly-coupled implicit formalism avoids the restrictive timesteps for the whistler mode in explicit Hall-MHD codes. A comparison of numerical and analytic dispersion analysis demonstrates the feasibility of this approach and establishes relevant constraints to assure numerical stability. The implementation of the algorithm is described, and test simulation results in 1D and 2D in both linear and nonlinear regimes are presented.

97 MATHEMATICS AND COMPUTING↗

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Partial fillings of the bosonic $E$ 8 quantum Hall state

Here, we study bosonic topological phases constructed from electrons. In addition to a bulk excitation energy gap, these bosonic phases also have a fermion energy gap, below which all local excitations in the bulk and on the edge are even combinations of electrons. We focus on chiral phases, in which all low-energy edge excitations move in the same direction, that arise from the short-range entangled $E_8$ quantum Hall state, the bosonic analog of the filled lowest Landau level of electrons. The $E_8$ edge-state theory features an $E_8$ Kac-Moody symmetry that can be decomposed into ${\cal G}_A \times {\cal G}_B$ subalgebras, such as $SU(3) \times E_6$, $SO(M) \times SO(16-M)$, and $G_2 \times F_4$. (Here, $\{SO(M) \}$, $\{SU(N)\}$, and $\{E_8, G_2, F_4 \}$ denote orthogonal, unitary, and exceptional Lie algebras.) Using these symmetry decompositions, we construct exactly solvable coupled-wire model Hamiltonians for families of long-range entangled ${\cal G}_A$ or ${\cal G}_B$ bosonic fractional quantum Hall states that "partially fill" the $E_8$ state and are pairwise related by a generalized particle-hole symmetry. These long-range entangled states feature either Abelian or non-Abelian topological order. Some support the emergence of non-local Dirac and Majorana fermions, Ising anyons, metaplectic anyons, Fibonacci anyons, as well as deconfined $\mathbb{Z}_2$ gauge fluxes and charges.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chiral Anomaly in Interacting Condensed Matter Systems

The chiral anomaly is a fundamental quantum mechanical phenomenon which is of great importance to both particle physics and condensed matter physics alike. In the context of QED, it manifests as the breaking of chiral symmetry in the presence of electromagnetic fields. It is also known that anomalous chiral symmetry breaking can occur through interactions alone, as is the case for interacting one-dimensional systems. In this Letter, we investigate the interplay between these two modes of anomalous chiral symmetry breaking in the context of interacting Weyl semimetals. Using Fujikawa’s path integral method, we show that the chiral charge continuity equation is modified by the presence of interactions which can be viewed as including the effect of the electric and magnetic fields generated by the interacting quantum matter. This can be understood further using dimensional reduction and a Luttinger liquid description of the lowest Landau level. These effects manifest themselves in the nonlinear response of the system. In particular, we find an interaction-dependent density response due to a change in the magnetic field as well as a contribution to the nonequilibrium and inhomogeneous anomalous Hall response while preserving its equilibrium value.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Here, the interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

42 ENGINEERING↗