Nanoscale selective growth and microstructural control of indium nitride (InN)
Selective area growth (SAG) is a phenomenon in thin film deposition where the sample surface is masked by a dielectric or refractory layer such that growth takes place only in the exposed window regions. As the opening window is pushed to nano-scale, it becomes possible to confine and control epitaxial evolution with lithographically engineered geometry with a feature size comparable to that ofa single nucleus. Two fundamental questions in nano-scale SAG are studied. The first one is how does nano-scale constriction in one direction impact the microstructure evolution in the other orthogonal directions. The other question is how does the presence of nano-scale geometric boundaries affect the crystallographic orientation in selective area epitaxy? InN is chosen as a case study to demonstrate the efficacy and unveil the science in nano-scale SAG. For the first time, we achieve uniform InN nanowires in the large scale with nano-trenches. The engineering of InN nuclei with interfacial energy and the possibility of orientation filtering are also studied.