Thin film characterization by electron microprobe and ellipsometry - SiO sub 2 films on silicon.
Combined electron microprobe and ellipsometric study of thin silicon dioxide films on silicon, noting reliability and accuracy
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Combined electron microprobe and ellipsometric study of thin silicon dioxide films on silicon, noting reliability and accuracy
Operational performance of squeeze-film bearing with incorporated piezoelectric driver gyro
Dynamic responses of spherical and conical squeeze film bearings
The effect of film coolant ejection from the pressure side of a stator blade was determined in a two-dimensional cascade. Stator exit surveys were made for each of six rows of coolant holes. Successive multirow tests were made with two, three, four, five, and six rows of coolant holes open. The results of the multirow tests are compared with the predicted multirow performance obtained by adding the single-row data. Results are presented in terms of stator primary-air efficiency as a function of coolant fraction.
It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.
Local buckling can cause large interlaminar stresses along the delamination front, which can lead to delamination growth. This paper examines several methods of calculating strain-energy release rates, which are often used to predict delamination growth. The thin-film plate analysis, which was least expensive, calculated the total strain-energy release rate G(T) quite accurately. However, the stress field along the delamination front is highly mixed-mode and has no fixed ratio of G(I) to G(II). Since plate analysis can only calculate G(T), it would not be useful for accurate predictions of delamination growth if mode mix is important.
An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.
The preparation procedure used to obtain superconducting thin films by radio frequency magnetron sputtering of a single mosaic target is described in detail. The single mosaic target is composed of (Y-Er), BaF2, and Cu.
The concept of high configurationally entropy requires that the high-entropy alloys (HEAs) yield single-phase solid solutions. However, phase separations are quite common in bulk HEAs. A five-element alloy, CrCoCuFeNi, was deposited via radio frequency magnetron sputtering and confirmed to be a single-phase solid solution through the high-energy synchrotron X-ray diffraction, energy-dispersive spectroscopy, wavelength-dispersive spectroscopy, and transmission election microscopy. The formation of the solid-solution phase is presumed to be due to the high cooling rate of the sputter-deposition process.
A significant decrease in the magnitude of the Casimir force (from 21% to 35%) was observed after an indium tin oxide sample interacting with an Au sphere was subjected to the UV treatment. Measurements were performed by using an atomic force microscope in high vacuum. The experimental results are compared with theory and a hypothetical explanation for the observed phenomenon is proposed.
We have investigated the electronic and optical properties of epitaxial La 1-x Sr x FeO 3 for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K -edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p -type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.
No abstract prepared.
Not Available
Not Available
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Not provided.