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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

silicon carbide (SiC)↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

single-event effect (SEE)↗
NASA NTRS2016

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

modeling↗
NASA NTRS2013

Radiation Tests of Single Photon Avalanche Diode for Space Applications

Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 micron diameter). Dark counts rate as low as few kHz at −10 degC has been obtained for the 500 micron devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2×10(exp 8) (1 MeV eq) n/cm2 with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degC have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10×10(exp 7) (1 MeV eq) n/cm(exp 2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics.

radiation hardness↗
NASA NTRS2018

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Diode↗
NASA NTRS2016

First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 µm

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

type-I↗
NASA NTRS2024

Thermal Inspection of Low Emissivity Surfaces Using a Pulsed Light Emitting Diodes (PLED) Heat Source

Thermal inspections of a structure typically utilize a flash or quartz lamp heat source located on the same side of an infrared camera. The heat source provides light energy for heating while the infrared camera measures the surface transient temperature response. The inspection can be difficult for low emissivity surfaces for several reasons. First, the high intensity light can reflect off the surface and cause “burn-in” to the camera’s detector. The “burn-in” can take time for the sensors to recover and potentially damage the detector. Secondly, the heat source after pulsing, has a transient cool down component. The cool down component can be reflected and therefore superimposed over the structure’s thermal response which can cause an error (false defect indications) in the inspection. Lastly, the heat source is spectrally broad and therefore while heating, infrared components of the heat source can produce non-uniformity in the measured temperature field. Typically for the inspection of reflective surfaces, paint or other emissivity enhancing coatings are applied before inspection. In this paper, a pulsed light emitting diodes (PLED) heat source is used. The PLED heat source is spectrally narrow, contained within the visible band, and therefore not detectable by the infrared camera. The PLED heat source is configured to reduce any transient cool down components that could produce false defect indications. The PLED thermal inspections are compared to commercially available flash thermography inspections on unpainted aluminum samples with simulated corrosion and additively manufactured Ti-6AL-4V metal specimens.

thermal nondestructive evaluation↗
NASA NTRS2024

Thermal Inspection of Low Emissivity Surfaces Using a Pulsed Light Emitting Diodes (PLED) Heat Source

Thermal inspections of a structure typically utilize a flash or quartz lamp heat source located on the same side of an infrared camera. The heat source provides light energy for heating while the infrared camera measures the surface transient temperature response. The inspection can be difficult for low emissivity surfaces for several reasons. First, the high intensity light can reflect off the surface and cause “burn-in” to the camera’s detector. The “burn-in” can take time for the sensors to recover and potentially damage the detector. Secondly, the heat source after pulsing, has a transient cool down component. The cool down component can be reflected and therefore superimposed over the structure’s thermal response which can cause an error (false defect indications) in the inspection. Lastly, the heat source is spectrally broad and therefore while heating, infrared components of the heat source can produce non-uniformity in the measured temperature field. Typically for the inspection of reflective surfaces, paint or other emissivity enhancing coatings are applied before inspection. In this paper, a pulsed light emitting diodes (PLED) heat source is used. The PLED heat source is spectrally narrow, contained within the visible band, and therefore not detectable by the infrared camera. The PLED heat source is configured to reduce any transient cool down components that could produce false defect indications. The PLED thermal inspections are compared to commercially available flash thermography inspections on unpainted aluminum samples with simulated corrosion and additively manufactured Ti-6AL-4V metal specimens.

thermal nondestructive evaluation↗
DOE OSTI2021

Band Edge Control of Quasi–2D Metal Halide Perovskites for Blue Light–Emitting Diodes with Enhanced Performance

Perovskite light–emitting diodes (PeLEDs) have received great attention for their potential as next–generation display technology. While remarkable progress has been achieved in green, red, and near–infrared PeLEDs with external quantum efficiencies (EQEs) exceeding 20%, obtaining high performance blue PeLEDs remains a challenge. Poor charge balance due to large charge injection barriers in blue PeLEDs has been identified as one of the major roadblocks to achieve high efficiency. Here band edge control of perovskite emitting layers for blue PeLEDs with enhanced charge balance and device performance is reported. By using organic spacer cations with different dipole moments, that is, phenethyl ammonium (PEA), methoxy phenethyl ammonium (MePEA), and 4–fluoro phenethyl ammonium (4FPEA), the band edges of quasi–2D perovskites are tuned without affecting their band gaps. Furthermore, detailed characterization and computational studies have confirmed the effect of dipole moment modification to be mostly electrostatic, resulting in changes in the ionization energies of ≈0.45 eV for MePEA and ≈ –0.65 eV for 4FPEA based thin films relative to PEA–based thin films. With improved charge balance, blue PeLEDs based on MePEA quasi–2D perovskites show twofold increase of the EQE as compared to the control PEA based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Highly Efficient Pure‐Blue Light‐Emitting Diodes Based on Rubidium and Chlorine Alloyed Metal Halide Perovskite

Abstract Perovskite light‐emitting diodes (PeLEDs) are promising candidates for display and solid‐state lighting, due to their tunable colors, high conversion efficiencies, and low cost. However, the performance of blue PeLEDs is far inferior to that of the near‐infrared, red, and green counterparts. Here, the fabrication of pure‐blue PeLEDs with an emission peak at 475 nm, a peak external quantum efficiency of 10.1%, and a maximum luminance of 14 000 cd m −2 is demonstrated by tailoring the compositions of perovskites. The pure‐blue electroluminescence is achieved by simultaneous addition of rubidium and chlorine ions into CsPbBr 3 and incorporation of phenylethylammonium chloride forms quasi‐2D hybrid perovskites. The combination of these composition engineering results in blueshifted emissions without reducing the quantum yield. The judicious alloying is shown to be critical to result in the better morphology with suppressed current leakage and enhanced light outcoupling.

Yang, Yang↗
DOE OSTI2023

Efficient, Color-Stable, and Long-Lived White Organic Light-Emitting Diodes Utilizing Phosphorescent Molecular Aggregates

Highly efficient and stable single-stack hybrid white organic light-emitting diode (WOLED) devices are developed using two emissive layers: one with amber-colored phosphorescent molecular-aggregate emission from the Pd(II) complex, Pd(II) 7-(3-(pyridine-2-yl-κN)phenoxy-κC)(benzo-κC)([c]benzo[4,5]imidazo-κN)[1,2-a][1,5]naphthyridine, Pd3O8-Py5, and the other with blue fluorescence emission. Here, an optimized device structure achieves high color stability under various current densities, an external quantum efficiency (EQE) of 45.5%, a power efficiency of 97.4 Lm W -1 , and an estimated LT 95 (operational time to 95% of the initial luminance) of 50 744 h at an initial luminance of 1000 cd m -2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Exciton Dynamics in Layered Halide Perovskite Light‐Emitting Diodes

Abstract Layered halide perovskites have garnered significant interest due to their exceptional optoelectronic properties and great promises in light‐emitting applications. Achieving high‐performance perovskite light‐emitting diodes (PeLEDs) requires a deep understanding of exciton dynamics in these materials. This review begins with a fundamental overview of the structural and photophysical properties of layered halide perovskites, then delves into the importance of dimensionality control and cascade energy transfer in quasi‐2D PeLEDs. In the second half of the review, more complex exciton dynamics, such as multiexciton processes and triplet exciton dynamics, from the perspective of LEDs are explored. Through this comprehensive review, an in‐depth understanding of the critical aspects of exciton dynamics in layered halide perovskites and their impacts on future research and technological advancements for layered halide PeLEDs is provided.

Baek, Sung‐Doo↗
DOE OSTI2023

Improved Light Extraction in Organic Light‐Emitting Diodes via Semiconductor Dilution

Increasing the internal light extraction efficiency of organic light‐emitting diodes (OLEDs) is key to improving their performance for solid‐state lighting applications; however, it is challenging to do this in a way that is compatible with high volume manufacturing. Here, it is shown that the outcoupling efficiency of OLEDs can be improved by diluting their hole transport layer (HTL) with the low refractive index material trifluoropropyl oligomeric silsesquioxane (F‐POSS). Specifically, co‐evaporating 40 vol.% F‐POSS in the HTL of single and multi‐stack phosphorescent OLEDs decreases its refractive index by Δ n ≈ 0.2, which in turn yields a ≈12% increase in their outcoupling efficiency with no impact on electrical performance or operational lifetime. This result is significant because F‐POSS is a small molecule that sublimes cleanly, does not aggregate, and is compatible with state‐of‐the‐art HTL materials, making it a realistic path to increase light extraction in commercial OLEDs manufactured on existing production lines.

36 MATERIALS SCIENCE↗
DOE OSTI2020

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

36 MATERIALS SCIENCE↗