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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Robert S Okojie↗
NASA NTRS2004

Growth and Characterization of Silicon-Carbide Hetero-Polytype Structures

Films discussed in this repok were deposited at NASA Glenn Research Center on on- orientation 4H-Sic substrates. Substrates were patterned in order to form mesa structures of different shapes and sizes. The nominal thickness of the 3C-Sic film was approximately 10 microns although the thickness could change considerably between defect-free and defected mesa structures. The primary objective was to identify defect structures in defect-free mesas and in particular determine the degree and mode of strain relaxation in 3C films with thickness exceeding critical thickness.

Skowronski, Marek↗
NASA NTRS2004

Silicon Carbide Schottky Barrier Diode

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Zhao, Jian H.↗
NASA NTRS1998

Method Developed for the High-Temperature Nondestructive Evaluation of Fiber-Reinforced Silicon Carbide Ceramic Matrix Composites

Ceramic matrix composites have emerged as candidate materials to allow higher operating temperatures (1000 to 1400 C) in gas turbine engines. A need, therefore, exists to develop nondestructive methods to evaluate material integrity at the material operating temperature by monitoring thermal and mechanical fatigue. These methods would also have potential as quality inspection tools. The goal of this investigation at the NASA Lewis Research Center is to survey and correlate the temperature-dependent damping and stiffness of advanced ceramic composite materials with imposed thermal and stress histories that simulate in-service turbine engine conditions. A typical sample size of 100 by 4 by 2 cubic millimeters, along with the specified stiffness and density, placed the fundamental vibration frequencies between 100 and 2000 Hz. A modified Forster apparatus seemed most applicable to simultaneously measure both damping and stiffness. Testing in vacuum reduced the effects of air on the measurements. In this method, a single composite sample is vibrated at its fundamental tone; then suddenly, the mechanical excitation is removed so that the sample's motion freely decays with time. Typical results are illlustrated in this paper.

Goldsby, Jon C.↗
NASA NTRS2005

Factors Controlling Elevated Temperature Strength Degradation of Silicon Carbide Composites

For 5 years, the cooperative agreement NCC3-763 has focused on the development and understanding of Sic-based composites. Most of the work was performed in the area of SiC fiber-reinforced composites for UEET and NGLT and in collaboration with Goodrich Corporation under a partially reimbursable Space Act Agreement. A smaller amount of work was performed on C fiber-reinforced SiC matrix composites for NGLT. Major accomplishments during this agreement included: Improvements to the interphase used in melt-infiltrated (MI) SiC/SiC composites which increases the life under stressed-oxidation at intermediate temperatures referred to as "outside-debonding". This concept is currently in the patent process and received a Space Act Award. Mechanistic-based models of intermediate temperature degradation for MI SiC/SiC Quantification and relatively robust relationships for matrix crack evolution under stress in SiC/SiC composites which serve as the basis for stress-strain and elevated temperature life models The furthering of acoustic emission as a useful tool in composite damage evolution and the extension of the technique to other composite systems Development of hybrid C-SiC fiber-reinforced SiC matrix composites Numerous presentations at conferences, industry partners, and government centers and publications in recognized proceedings and journals. Other recognition of the author's accomplishments by NASA with a TGIR award (2004), NASA's Medal for Public Service (2004), and The American Ceramic Society s Richard M. Fulrath Award (2005). The following will briefly describe the work of the past five years in the three areas of interest: SiC/SiC composite development, mechanistic understanding and modeling of SiC/SiC composites, and environmental durability of C/SiC composites. More detail can be found in the publications cited at the end of this report.

Source record↗
NASA NTRS2001

Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems

High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as sensors and electronics for space missions to the inner solar system, sensors for in situ combustion and emission monitoring, and electronics for combustion control for aeronautical and automotive engines. However, these devices cannot be used until they can be packaged in appropriate forms for specific applications. Suitable packaging technology for operation temperatures up to 500 C and beyond is not commercially available. Thus, the development of a systematic high-temperature packaging technology for SiC-based microsystems is essential for both in situ testing and commercializing high-temperature SiC sensors and electronics. In response to these needs, researchers at Glenn innovatively designed, fabricated, and assembled a new prototype electronic package for high-temperature electronic microsystems using ceramic substrates (aluminum nitride and aluminum oxide) and gold (Au) thick-film metallization. Packaging components include a ceramic packaging frame, thick-film metallization-based interconnection system, and a low electrical resistance SiC die-attachment scheme. Both the materials and fabrication process of the basic packaging components have been tested with an in-house-fabricated SiC semiconductor test chip in an oxidizing environment at temperatures from room temperature to 500 C for more than 1000 hr. These test results set lifetime records for both high-temperature electronic packaging and high-temperature electronic device testing. As required, the thick-film-based interconnection system demonstrated low (2.5 times of the room-temperature resistance of the Au conductor) and stable (decreased 3 percent in 1500 hr of continuous testing) electrical resistance at 500 C in an oxidizing environment. Also as required, the electrical isolation impedance between printed wires that were not electrically joined by a wire bond remained high (greater than 0.4 GW) at 500 C in air. The attached SiC diode demonstrated low (less than 3.8 W/mm2) and relatively consistent dynamic resistance from room temperature to 500 C. These results indicate that the prototype package and the compatible die-attach scheme meet the initial design standards for high-temperature, low-power, and long-term operation. This technology will be further developed and evaluated, especially with more mechanical tests of each packaging element for operation at higher temperatures and longer lifetimes.

Chen, Liang-Yu↗
NASA NTRS2005

Silicon Carbide Radioisotope Batteries

The substantial radiation resistance and large bandgap of SiC semiconductor materials makes them an attractive candidate for application in a high efficiency, long life radioisotope battery. To evaluate their potential in this application, simulated batteries were constructed using SiC diodes and the alpha particle emitter Americium Am-241 or the beta particle emitter Promethium Pm-147. The Am-241 based battery showed high initial power output and an initial conversion efficiency of approximately 16%, but the power output decayed 52% in 500 hours due to radiation damage. In contrast the Pm-147 based battery showed a similar power output level and an initial conversion efficiency of approximately 0.6%, but no degradation was observed in 500 hours. However, the Pm-147 battery required approximately 1000 times the particle fluence as the Am-242 battery to achieve a similar power output. The advantages and disadvantages of each type of battery and suggestions for future improvements will be discussed.

Rybicki, George C.↗
NASA NTRS2003

Silicon Carbide Nanotube Synthesized

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Lienhard, Michael A.↗
NASA NTRS2005

Ultrasonic Guided-Wave-Scan System Used to Characterize C-Enhanced Silicon Carbide Composite During Creep- Rupture Tests

Ceramic matrix composites (CMCs) are being developed for advanced aerospace propulsion applications in order to save weight, improve reuse capability, and increase performance. However, mechanical and environmental loads applied to CMCs can cause degradation in the form of discrete flaws and distributed microdamage that can play a significant role in reducing desirable physical properties. Categories of microdamage include fiber/matrix debonding (interface failure), matrix microcracking, fiber fracture and buckling, oxidation, and second-phase formation. Distributed microdamage in CMCs has proven difficult to characterize nondestructively because of the complex microstructure and macrostructure of these materials, and a recent study regarding the durability of a ceramic matrix composite discussed the requirement for improved nondestructive evaluation (NDE) methods for monitoring degradation in these materials.

Roth, Don J.↗
NASA NTRS2005

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Niedra, Janis M.↗
NASA NTRS2006

Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

Niedra, Janis M.↗
NASA NTRS2005

The Effect of Metal Composition on Fe-Ni Partition Behavior between Olivine and FeNi-Metal, FeNi-Carbide, FeNi-Sulfide at Elevated Pressure

Metal-olivine Fe-Ni exchange distribution coefficients were determined at 1500 C over the pressure range of 1 to 9 GPa for solid and liquid alloy compositions. The metal alloy composition was varied with respect to the Fe/Ni ratio and the amount of dissolved carbon and sulfur. The Fe/Ni ratio of the metal phase exercises an important control on the abundance of Ni in the olivine. The Ni abundance in the olivine decreases as the Fe/Ni ratio of the coexisting metal increases. The presence of carbon (up to approx. 3.5 wt.%) and sulfur (up to approx. 7.5 wt.%) in solution in the liquid Fe-Ni-metal phase has a minor effect on the partitioning of Fe and Ni between metal and olivine phases. No pressure dependence of the Fe-Ni-metal-olivine exchange behavior in carbon- and sulfur-free and carbon- and sulfur-containing systems was found within the investigated pressure range. To match the Ni abundance in terrestrial mantle olivine, assuming an equilibrium metal-olivine distribution, a sub-chondritic Fe/Ni-metal ratio that is a factor of 17 to 27 lower than the Fe/Ni ratios in estimated Earth core compositions would be required, implying higher Fe concentrations in the core forming metal phase. A simple metal-olivine equilibrium distribution does not seem to be feasible to explain the Ni abundances in the Earth's mantle. An equilibrium between metal and olivine does not exercise a control on the problem of Ni overabundance in the Earth's mantle. The experimental results do not contradict the presence of a magma ocean at the time of terrestrial core formation, if olivine was present in only minor amounts at the time of metal segregation.

Holzheid, Astrid↗
NASA NTRS2007

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at Room and Elevated Temperature

Three shapes of tensile specimens were tested--curved with a very low stress concentration factor and straight with either a circular hole or an elliptical hole. The nominal thickness was 125 micron with a net section 100 micron wide; the overall length of these microspecimens was 3.1 mm. They were fabricated by an improved version of deep reactive ion etching, which produced specimens with smooth sidewalls and cross-sections having a slightly trapezoidal shape that was exaggerated inside the holes. The novel test setup used a vertical load train extending into a resistance furnace. The specimens had wedge-shaped ends which fit into ceramic grips. The fixed grip was mounted on a ceramic post, and the movable grip was connected to a load cell and actuator outside the furnace with a ceramic-encased nichrome wire. The same arrangement was used for tests at 24 and at 1000 C. The strengths of the curved specimens for two batches of material (made with slightly different processes) were 0.66+/-0.12 GPa and 0.45+/-0.20 GPa respectively at 24 C with identical values at 1000 C. The fracture strengths of the circular-hole and elliptical-hole specimens (computed from the stress concentration factors and measured loads at failure) were approximately 1.2 GPa with slight decreases at the higher temperature. Fractographic examinations showed failures initiating on the surface--primarily at corners. Weibull predictions of fracture strengths for the hole specimens based on the properties of the curved specimens were reasonably effective for the circular holes, but not for the elliptical holes.

Nemeth, Noel N.↗
NASA NTRS1994

Fabricating porous silicon carbide

The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulated so that only a bare semiconductor surface is exposed. The electrochemical cell is filled with an HF electrolyte which dissolves the SiC electrochemically. A potential is applied to the semiconductor and UV light illuminates the surface of the semiconductor. By controlling the light intensity, the potential and the doping level, a porous layer is formed in the semiconductor and thus one produces porous SiC.

Shor, Joseph S.↗
NASA NTRS1999

Continuous method of producing silicon carbide fibers

This invention pertains to a method for production of polycrystalline ceramic fibers from silicon oxycarbide (SiCO) ceramic fibers wherein the method comprises heating an amorphous ceramic fiber containing silicon and carbon in an inert environment comprising a boron oxide and carbon monoxide at a temperature sufficient to convert the amorphous ceramic fiber to a polycrystalline ceramic fiber. By having carbon monoxide present during the heating of the ceramic fiber, it is possible to achieve higher production rates on a continuous process.

Barnard, Thomas Duncan↗
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗