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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering

Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr + ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Real time x-ray studies during nanostructure formation on silicon via low energy ion beam irradiation using ultrathin iron films

Real time grazing incidence small angle x-ray scattering and x-ray fluorescence (XRF) are used to elucidate nanodot formation on silicon surfaces during low energy ion beam irradiation of ultrathin iron-coated silicon substrates. Four surface modification stages were identified: (1) surface roughening due to film erosion, (2) surface smoothing and silicon-iron mixing, (3) structure formation, and (4) structure smoothing. The results conclude that 2.5 Multiplication-Sign 10{sup 15} iron atoms in a 50 nm depth triggers surface nanopatterning with a correlated nanodots distance of 25 nm. Moreover, there is a wide window in time where the surface can have correlated nanostructures even after the removal of all the iron atoms from the sample as confirmed by XRF and ex-situ x-ray photoelectron spectroscopy (XPS). In addition, in-situ XPS results indicated silicide formation, which plays a role in the structure formation mechanism.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Unresolved puzzles in the x-ray emission produced by charge exchange measured on electron beam ion traps

Charge exchange recombination, the transfer of one or more electrons from an atomic or molecular system to a positive ion, is a common phenomenon affecting laboratory and astrophysical plasmas. Controlled studies of this process in electron beam ion traps during the past one and a half decades have produced multiple observations that are difficult to explain with available spectral models. Some of the most recent observations are so puzzling that they bring in doubt the existence of a coherent predictive capability for line formation by charge exchange, making investigations of charge exchange a fertile ground for continued measurements and theoretical development.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2015

Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Atomic-scale thermocapillary flow in focused ion beam milling

Focused ion beams provide a means of nanometer-scale manufacturing and material processing, which is used for applications such as forming nanometer-scale pores in thin films for DNA sequencing. We investigate such a configuration with Ga{sup +} bombardment of a Si thin-film target using molecular dynamics simulation. For a range of ion intensities in a realistic configuration, a recirculating melt region develops, which is seen to flow with a symmetrical pattern, counter to how it would flow were it driven by the ion momentum flux. Such flow is potentially important for the shape and composition of the formed structures. Relevant stress scales and estimated physical properties of silicon under these extreme conditions support the importance thermocapillary effects. A flow model with Marangoni forcing, based upon the temperature gradient and geometry from the atomistic simulation, indeed reproduces the flow and thus could be used to anticipate such flows and their influence in applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Background gas density and beam losses in NIO1 beam source

NIO1 (Negative Ion Optimization 1) is a versatile ion source designed to study the physics of production and acceleration of H- beams up to 60 keV. In ion sources, the gas is steadily injected in the plasma source to sustain the discharge, while high vacuum is maintained by a dedicated pumping system located in the vessel. In this paper, the three dimensional gas flow in NIO1 is studied in the molecular flow regime by the Avocado code. The analysis of the gas density profile along the accelerator considers the influence of effective gas temperature in the source, of the gas temperature accommodation by collisions at walls, and of the gas particle mass. The calculated source and vessel pressures are compared with experimental measurements in NIO1 during steady gas injection.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Absolute polarimeter for the proton-beam energy of 200 MeV

A polarimeter is upgraded and tested in a 200-MeV polarized-proton beam at the accelerator-collider facility of the Brookhaven National Laboratory. The polarimeter is based on the elastic polarizedproton scattering on a carbon target at an angle of 16.2°, in which case the analyzing power is close to unity and was measured to a very high degree of precision. It is shown that, in the energy range of 190–205 MeV, the absolute polarization can be measured to a precision better than ±0.5%.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Transverse self-modulation of ultra-relativistic lepton beams in the plasma wakefield accelerator

The transverse self-modulation of ultra-relativistic, long lepton bunches in high-density plasmas is explored through full-scale particle-in-cell simulations. We demonstrate that long SLAC-type electron and positron bunches can become strongly radially self-modulated over centimeter distances, leading to wake excitation in the blowout regime with accelerating fields in excess of 20 GV/m. We show that particles energy variations exceeding 10 GeV can occur in meter-long plasmas. We find that the self-modulation of positively and negatively charged bunches differs when the blowout is reached. Seeding the self-modulation instability mitigates the effect of the competing hosing instability. This work reveals that a proof-of-principle experiment to test the physics of bunch self-modulation can be performed with available lepton bunches and with existing experimental apparatus and diagnostics.

43 PARTICLE ACCELERATORS↗