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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m{sup −1} K{sup −1}, is lower than the bulk basal plane value (390 W m{sup −1} K{sup −1}) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Phase transformations of nano-sized cubic boron nitride to white graphene and white graphite

We report quantum-mechanical investigations that predict the formation of white graphene and nano-sized white graphite from the first-order phase transformations of nano-sized boron nitride thin-films. The phase transformations from the nano-sized diamond-like structure, when the thickness d > 1.4 nm, to the energetically more stable nano-sized white graphite involve low activation energies of less than 1.0 eV. On the other hand, the diamond-like structure transforms spontaneously to white graphite when d ≤ 1.4 nm. In particular, the two-dimensional structure with single-layer boron nitride, the so-called white graphene, could be formed as a result of such transformation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Inter-layer potential for hexagonal boron nitride

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

To facilitate the design of heterostructure devices employing hexagonal/sp{sup 2} boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and CBOs) present at interfaces formed between amorphous hydrogenated sp{sup 2} boron nitride (a-BN:H) and various low- and high-dielectric-constant (k) amorphous hydrogenated silicon network dielectric materials (a-SiX:H, X = O, N, C). For a-BN:H interfaces formed with wide-band-gap a-SiO{sub 2} and low-k a-SiOC:H materials (E{sub g} ≅ 8.2−8.8 eV), a type I band alignment was observed where the a-BN:H band gap (E{sub g} = 5.5 ± 0.2 eV) was bracketed by a relatively large VBO and CBO of ∼1.9 and 1.2 eV, respectively. Similarly, a type I alignment was observed between a-BN:H and high-k a-SiC:H where the a-SiC:H band gap (E{sub g} = 2.6 ± 0.2 eV) was bracketed by a-BN:H with VBO and CBO of 1.0 ± 0.1 and 1.9 ± 0.2 eV, respectively. The addition of O or N to a-SiC:H was observed to decrease the VBO and increase the CBO with a-BN:H. For high-k a-SiN:H (E{sub g} = 3.3 ± 0.2 eV) interfaces with a-BN:H, a slightly staggered type II band alignment was observed with VBO and CBO of 0.1 ± 0.1 and −2.3 ± 0.2 eV, respectively. The measured a-BN:H VBOs were found to be consistent with those deduced via application of the commutative and transitive rules to VBOs reported for a-BN:H, a-SiC:H, a-SiN:H, and a-SiO{sub 2} interfaces with Si (100)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm{sup 2}) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The electronic transport behavior of hybridized zigzag graphene and boron nitride nanoribbons

In this present work, we have investigated the electronic transport properties of the hybridized structure constructed by the zigzag graphene and boron-nitride (BN) nanoribbons (Z-B{sub n}N{sub m}C{sub p}, n + m + p = 16) through employing nonequilibrium Green's functions in combination with the density-functional theory. The results demonstrate that the electronic transport properties of the hybridized Z-B{sub n}N{sub m}C{sub p} nanoribbons are strongly dependent on the width of boron-nitride or graphene nanoribbons. When the numbers of n and m are not equal, the negative differential resistance behavior is observed, which can be modulated by varying the width of BN nanoribbons. The conductance of the hybridized Z-B{sub n}N{sub m}C{sub p} nanoribbons with odd numbers of zigzag carbon chains also increases by the width of BN nanoribbons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Electrically dependent bandgaps in graphene on hexagonal boron nitride

We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for opening and modulating a bandgap in graphene as high as several hundred meV.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Noble gas excimer scintillation following neutron capture in boron thin films

Far-ultraviolet scintillation signals have been measured in heavy noble gases (argon, krypton, xenon) following boron-neutron capture ({sup 10}B(n,α){sup 7}Li) in {sup 10}B thin films. The observed scintillation yields are comparable to the yields from some liquid and solid neutron scintillators. At noble gas pressures of 107 kPa, the number of photons produced per neutron absorbed following irradiation of a 1200 nm thick {sup 10}B film was 14 000 for xenon, 11 000 for krypton, and 6000 for argon. The absolute scintillation yields from the experimental configuration were calculated using data from (1) experimental irradiations, (2) thin-film characterizations, (3) photomultiplier tube calibrations, and (4) photon collection modeling. Both the boron films and the photomultiplier tube were characterized at the National Institute of Standards and Technology. Monte Carlo modeling of the reaction cell provided estimates of the photon collection efficiency and the transport behavior of {sup 10}B(n,α){sup 7}Li reaction products escaping the thin films. Scintillation yields increased with gas pressure due to increased ionization and excitation densities of the gases from the {sup 10}B(n,α){sup 7}Li reaction products, increased frequency of three-body, excimer-forming collisions, and reduced photon emission volumes (i.e., larger solid angle) at higher pressures. Yields decreased for thicker {sup 10}B thin films due to higher average energy loss of the {sup 10}B(n,α){sup 7}Li reaction products escaping the films. The relative standard uncertainties in the measurements were determined to lie between 14% and 16%. The observed scintillation signal demonstrates that noble gas excimer scintillation is promising for use in practical neutron detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resonant x-ray reflectivity study of partial decomposed boron nitride thin films using Indus-1 synchrotron

We determined the microstructural parameters and chemical composition profile of partial decomposed boron nitride thin films using x-ray reflectivity near the respective absorption edges. The elemental specificity and optical contrast variation properties of the resonant effect are utilized to combine chemical analysis with physical microstructure of thin films from x-ray scattered intensities. We demonstrated these aspects through calculations and experiments in the soft x-ray region near the boron K-absorption edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} with and without boron doping

We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} films (x = 1.0 and 2.3%) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge{sub 1-x}Fe{sub x} films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (∼5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge{sub 1-x}Fe{sub x} films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge{sub 1-x}Fe{sub x} from ∼10{sup 18} cm{sup −3} to ∼10{sup 20} cm{sup −3} (x = 1.0%) and to ∼10{sup 19} cm{sup −3} (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Boron-tuning transition temperature of vanadium dioxide from rutile to monoclinic phase

The effect of the doped boron on the phase transition temperature between the monoclinic phase and the rutile phase of VO{sub 2} has been studied by performing first-principles calculations. It is found that the phase transition temperature decreases linearly with increasing the doping level of B in each system, no matter where the B atom is in the crystal. More importantly, the descent of the transition temperature is predicted to be as large as 83 K/at. % B, indicating that the boron concentration of only 0.5% can cause the phase transition at room temperature. These findings provide a new routine of modulating the phase transition of VO{sub 2} and pave a way for the practicality of VO{sub 2} as an energy-efficient green material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Planar dicyclic B{sub 6}S{sub 6}, B{sub 6}S{sub 6}{sup −}, and B{sub 6}S{sub 6}{sup 2−} clusters: Boron sulfide analogues of naphthalene

Inorganic analogues of hydrocarbons or polycyclic aromatic hydrocarbons (PAHs) are of current interest in chemistry. Based upon global structural searches and B3LYP and CCSD(T) calculations, we present herein the perfectly planar dicyclic boron sulfide clusters: D{sub 2h} B{sub 6}S{sub 6} (1, {sup 1}A{sub g}), D{sub 2h} B{sub 6}S{sub 6}{sup −} (2, {sup 2}B{sub 3u}), and D{sub 2h} B{sub 6}S{sub 6}{sup 2−} (3, {sup 1}A{sub g}). These are the global minima of the systems, being at least 0.73, 0.81, and 0.53 eV lower in energy, respectively, than their alternative isomers at the CCSD(T) level. The D{sub 2h} structures feature twin B{sub 3}S{sub 2} five-membered rings, which are fused together via a B{sub 2} unit and terminated by two BS groups. Bonding analyses show that the closed-shell B{sub 6}S{sub 6}{sup 2−} (3) cluster possesses 10 delocalized π electrons, closely analogous to the bonding pattern of the aromatic naphthalene C{sub 10}H{sub 8}. The B{sub 6}S{sub 6}{sup −} (2) and B{sub 6}S{sub 6} (1) species are readily obtained upon removal of one or two π electrons from B{sub 6}S{sub 6}{sup 2−} (3). The results build a new analogous relationship between boron sulfide clusters and their PAH counterparts. The B{sub 6}S{sub 6}{sup −} (2) monoanion and B{sub 6}S{sub 6}{sup 2−} (3) dianion can be effectively stabilized in neutral LiB{sub 6}S{sub 6} and Li{sub 2}B{sub 6}S{sub 6} salts, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tuning negative differential resistance in single-atomic layer boron-silicon sheets

Using density functional theory and nonequilibrium Green's function formalism for quantum transport calculation, we have quantified the ballistic transport properties along different directions in two-dimensional boron-silicon (B-Si) compounds, as well as the current response to bias voltage. The conductance of the most B-Si devices is higher than the conductance of one-atom-thick boron and silicene. Furthermore, the negative differential resistance phenomenon can be found at certain B-Si stoichiometric composition, and it occurs at various bias voltages. Also, the peak-to-valley ratio is sensitive to the B-Si composition and dependent of the direction considered for B-Si monolayers. The present findings could be helpful for applications of the single-atomic layer B-Si sheets in the field of semiconductor devices or low-dimensional electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗