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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide alloy, and gallium antimonide alloy
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germanium
Chemical vapor deposition of epitaxial gallium arsenide
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Microwave amplification in high resistivity gallium arsenides
The Laser Tracking and Ranging System (LTRS) is an optical tracking radar that uses a gallium-arsenide injection laser as the transmitting source. The system is designed to track a small retrodirective corner-reflector array and to provide continuously the range, azimuth, and elevation of the array's position relative to the tracking unit. The development effort was directed toward providing a small, compact and relatively lightweight instrument mainly as a part of the Lunar Surveying System for tracking an astronaut's staff. A number of other applications considered include the LTRS as a navigation instrument for a Lunar Flying Vehicle and as a crew safety device for monitoring an astronaut's situation during any EVA operations.
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Production and optical properties of zinc selenide aluminum arsenide heterojunction and platinum zinc selenide Schottky junction
Describing method for vapor deposition of gallium arsenide films to manganese substrates to provide semiconductor devices with low resistance substrates
Acoustic field effects on gallium arsenide, silicon solar cells, and photoresistive devices with and without light exposure
Gallium arsenide solar cell preparation by surface deposition of cuprous iodide on thin n-type polycrystalline layers and heating in iodine vapor
Optimization for zero gravity experiment on solution growth of gallium arsenide and design of experiment package for melt growth of indium antimonide crystals
Effects of parasitic impedances on conversion loss of millimeter wave mixers utilizing ion bombarded silicon and gallium arsenide
Temperature dependence of ionization rates in aluminum gallium arsenides for samples with varying Al contents
Photocathode for the 8500 angstrom through 9000 angstrom range, improving efficiency by an order of magnitude, is achieved with a gallium arsenide cesium oxide photocathode. Protection of the GaAs surface from contamination during bake-out is another important function.
Newly developed Gunn oscillator is three-terminal device which consists of piece of gallium arsenide with source, drain, and gate contacts. Voltage tunable three-terminal device does not require bulky resonant cavity and allows oscillation frequency to be rapidly tuned with simple circuitry.
An optical communications system, consisting of a gallium arsenide laser transmitter and three instrumented ground sites, was evaluated during the Gemini 7 flight. Considered was the use of crewmembers as a pointing element and the exploration of the atmosphere by optical coherent radiator outside the atmosphere. Results show that beacon lasers of greater survivability in field environments are needed to overcome unfavorable cloud conditions. A 1-watt argon laser is visible at orbital altitudes.
Abstracts, bibliographic data, oral presentations, and published papers on (1) Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide, and (2) Properties of Gallium Phosphide Schottky Barrier Rectifiers for Use at High Temperature are presented.