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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Room-temperature InGaAs detector arrays for 2.5 microns

This paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.

Olsen, G. H.↗
NASA NTRS1991

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗
NASA NTRS1991

Making High-Pass Filters For Submillimeter Waves

Micromachining-and-electroforming process makes rigid metal meshes with cells ranging in size from 0.002 in. to 0.05 in. square. Series of steps involving cutting, grinding, vapor deposition, and electroforming creates self-supporting, electrically thick mesh. Width of holes typically 1.2 times cutoff wavelength of dominant waveguide mode in hole. To obtain sharp frequency-cutoff characteristic, thickness of mesh made greater than one-half of guide wavelength of mode in hole. Meshes used as high-pass filters (dichroic plates) for submillimeter electromagnetic waves. Process not limited to square silicon wafers. Round wafers also used, with slightly more complication in grinding periphery. Grid in any pattern produced in electroforming mandrel. Any platable metal or alloy used for mesh.

Siegel, Peter H.↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1992

High-gain step-profiled integrated diagonal horn-antennas

A new step-profiled integrated-horn antenna is proposed. The antenna allows gains in the range of 17-20 dB to be achieved using standard (100) silicon wafers. The antenna is diagonally fed and exhibits very good circular symmetry within the 10-dB beamwidth. It has a fundamental Gaussian coupling efficiency of 83 percent. It is demonstrated that the profiled antenna has a radiation pattern similar to that of its smooth envelope horn, provided that the discontinuity between successive wafers does not exceed 0.15 lambda. The integrated stepped-profile horn performs much better than a corresponding smooth 70 deg flare-angle integrated horn of the same aperture size. The integrated step-profile horn is very well-suited for radio-astonomical and remote-sensing millimeter-wave imaging arrays requiring a large number of focal-plane elements.

Eleftheriades, George V.↗
NASA NTRS1991

Minority carrier lifetime in indium phosphide

Transient photoluminescence is used to measure the minority carrier lifetime on n-type and p-type InP wafers. The measurements show that unprocessed InP wafers have very high minority carrier lifetimes. Lifetimes of 200 ns and 700 ns were observed for lightly-doped p- and n-type material respectively. Lifetimes over 5 ns were found in heavily doped n-type material.

Jenkins, Phillip↗
NASA NTRS1993

Energetic Atoms Would Etch Photoresists Anisotropically

Directed beams of single oxygen atoms having kinetic energies between 1 and 5 eV used in anisotropic etching of oxygen-labile photoresist patterns on silicon wafers. Key step in manufacturing integrated circuits on semiconductor wafers. Damage to semiconductor material under photoresist layer reduced or eliminated. Method incorporated into lithographic processes for fabrication of integrated circuits.

Koontz, Steven↗
NASA NTRS1992

Ultra-dense magnetoresistive mass memory

This report details the progress and accomplishments of Nonvolatile Electronics (NVE), Inc., on the design of the wafer scale MRAM mass memory system during the fifth quarter of the project. NVE has made significant progress this quarter on the one megabit design in several different areas. A test chip, which will verify a working GMR bit with the dimensions required by the 1 Meg chip, has been designed, laid out, and is currently being processed in the NVE labs. This test chip will allow electrical specifications, tolerances, and processing issues to be finalized before construction of the actual chip, thus providing a greater assurance of success of the final 1 Meg design. A model has been developed to accurately simulate the parasitic effects of unselected sense lines. This model gives NVE the ability to perform accurate simulations of the array electronic and test different design concepts. Much of the circuit design for the 1 Meg chip has been completed and simulated and these designs are included. Progress has been made in the wafer scale design area to verify the reliable operation of the 16 K macrocell. This is currently being accomplished with the design and construction of two stand alone test systems which will perform life tests and gather data on reliabiliy and wearout mechanisms for analysis.

Daughton, J. M.↗
NASA NTRS1992

Quantum well, beam deflecting surface emitting lasers

This invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.

Kim, Jae H.↗
NASA NTRS1992

Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Raman, C.↗
NASA NTRS1992

Quasi-optical antenna-mixer-array design for terahertz frequencies

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Guo, Yong↗
NASA NTRS1993

A Compact Imaging Detector of Polarization and Spectral Content

A new type of image detector will simultaneously analyze the polarization of light at all picture elements in a scene. The integrated Dual Imaging Detector (IDID) consists of a polarizing beam splitter bonded to a charge-coupled device (CCD), with signal-analysis circuitry and analog-to-digital converters, all integrated on a silicon chip. The polarizing beam splitter can be either a Ronchi ruling, or an array of cylindrical lenslets, bonded to a birefringent wafer. The wafer, in turn, is bonded to the CCD so that light in the two orthogonal planes of polarization falls on adjacent pairs of pixels. The use of a high-index birefringent material, e.g., rutile, allows the IDID to operate at f-numbers as high as f/3.5. Other aspects of the detector are discussed.

Rust, D. M.↗
NASA NTRS1992

Novel Coplanar Waveguide to Slotline Transition on High Resistivity Silicon

Two novel coplanar waveguide (CPW) to slotline transitions have been fabricated and tested on high resistivity silicon. The first transition uses an air bridge to couple RF power from the CPW line to the slotline and has the entire circuit on the top side of the wafer. In the second transition, the grounded CPW line and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The measured average intersection loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30 percent at C-band frequencies.

Simons, R. N.↗
NASA NTRS1993

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

Garcia, Edouard↗
NASA NTRS1993

Growth of Si spherical crystals and the surface oxidation (M-9)

Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches the protuberances. The total time needed for the melting and the growth processes is estimated to be 30 minutes. Infrared emission from the sphere is monitored in order to prevent the accidental loss of the central solid core. The schematical illustration of the second experient is shown. A single crystal, Si rod is used as the starting material. In the first stage, the rod is melted from one end to obtain a liquid sphere. In the second stage, the single crystal is grown by decreasing the temperature from the unmelted part of the rod which is used as the seed. The second experient somewhat resembles the Czochralski method used on the ground; however, in the space experiment, no crucible is employed and the temperature uniformity is much superior. In both experiments, phosphorous is doped to allow observation of the change in the shape of the liquid solid interface during crystal growth and the impurity striations, if any.

Nishinaga, Tatau↗
NASA NTRS1993

Superconductivity devices: Commercial use of space

The processing and screen printing of the superconducting BSCCO and 123 YBCO materials on substrates is described. The resulting superconducting properties and the use of these materials as possible electrode materials for ferroelectrics at 77 K are evaluated. Also, work performed in the development of solid-state electromechanical actuators is reported. Specific details include the fabrication and processing of high strain PBZT and PLZT electrostrictive materials, the development of PSZT and PMN-based ceramics, and the testing and evaluation of these electrostrictive materials. Finally, the results of studies on a new processing technology for preparing piezoelectric and electrostrictive ceramic materials are summarized. The process involves a high temperature chemical reduction which leads to an internal pre-stressing of the oxide wafer. These reduced and internally biased oxide wafers (RAINBOW) can produce bending-mode actuator devices which possess a factor of ten more displacement and load bearing capacity than present-day benders.

Haertling, Gene↗
NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗
NASA NTRS1995

Superconductivity devices: Commercial use of space

The work described in this report covers various aspects of the Rainbow solid-state actuator technology. It is presented in six parts dealing with materials, processing, fabrication, properties and associated phenomena. The Rainbow actuator technology is a relatively new materials development which had its inception in 1992. It consists of a new processing technology for preparing piezoelectric and electrostrictive ceramic materials. It involves a high temperature chemical reduction process which leads to an internal pre-stressing of the oxide wafer, thus the name Rainbow, an acronym for Reduced And INternally Biased Oxide Wafer. Ceramics fabricated by this method produce bending-mode actuator devices which possess several times more displacement and load bearing capacity than present-day benders (unimorphs, bimorphs). It is anticipated that these solid-state, electromechanical actuators which can be used in a number of applications in space such as cryopump motors, anti-vibration active structures, autoleveling platforms, telescope mirror correctors and autofocusing devices. When considering any of these applications, the key to the development of a successful device is the successful development of a ceramic material which can produce maximum displacement per volt input; hence, this initiative involving a solid-state means for achieving unusually high electromechanical displacement can be significant and far reaching. An additional benefit obtained from employing the piezoelectric effect in these actuator devices is the ability to also utilize them as sensors; and, indeed, they can be used as both motor (actuator) and generator (sensor) in multifunction devices.

Haertling, Gene↗