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At least 667 records · Page 37

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Confinement and manipulation of electron plasmas in a multicell trap

Plasma dynamics and transport are studied experimentally in a multicell Penning-Malmberg trap. The goal is to develop methods for accumulation and long-term confinement of larger numbers of charged particles (e.g., positrons) than is presently possible. In this scheme, the particles constitute non-neutral plasmas which are confined separately in a parallel array of storage cells. Experiments are presented in which pure electron plasmas are transferred from a large-diameter “master cell” trapping region into four smaller, parallel “storage cells,” three of which are offset from the magnetic symmetry axis. The physics of the transfer process, as well as the confinement properties of plasmas in the storage cells, is discussed. We show that plasmas can be transferred into the storage cells and held there for up to a day or more using the rotating wall technique, provided that the plasma radius is sufficiently small compared to that of the cell wall. Experiments regarding the confinement of plasmas with kilovolt space charge are discussed. Recommendations are provided for future efforts with high-capacity multicell traps.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Analytic band-to-trap tunneling model including band offset for heterojunction devices

In this paper, we present an analytic band-to-trap tunneling model based on the open boundary scattering approach. The new model has three major advantages: (i) It includes not only the well-known electric field effect, but more importantly, the effect of heterojunction band offset. This feature allows us to simulate both electric field and band offset enhanced carrier recombination near a heterojunction in heterostructures. (ii) Its analytic form enables straightforward implementation into a parallel Technology Computer Aided Design device and circuit simulators. (iii) The developed method can be used for any potentials which can be approximated to a good degree such that the Schrödinger equation with open boundary conditions results in piecewise analytic wave functions. Simulation results of an InGaP/GaAs heterojunction bipolar transistor (HBT) reveal that the proposed model predicts significantly increased base currents, because the tunneling of holes in the base to traps in the emitter is greatly enhanced by the emitter-base band offset. Lastly, this finding, which is not captured by existing band-to-trap tunneling models, is consistent with the experimental observation for an InGaP/GaAs HBT after neutron irradiation.

36 MATERIALS SCIENCE↗

Self-trapped hole and impurity-related broad luminescence in $β$-Ga 2 O 3

Here we explore the luminescence properties of self-trapped holes and impurity-related acceptors using one-dimensional configuration coordinate diagrams derived from hybrid functional calculations. The photoluminescence spectrum of as-grown $β$-Ga 2 O 3 typically consists of a broad band in the wavelength region from ultraviolet to green and is often dominated by an impurity independent ultraviolet band that is commonly attributed to self-trapped holes. Here, we use the self-trapped hole as a benchmark to evaluate the accuracy of the theoretical defect luminescence spectra and estimate the optical properties of Mg Ga , Be Ga , Ca Ga , Cd Ga , Zn Ga , Li Ga , and N O acceptor impurities, as well as their complexes with hydrogen donors. We also explore $V$ Ga acceptors complexed with hydrogen and Si Ga donor impurities. The results show that these defects can give rise to broad luminescence bands peaking in the infrared to visible part of the spectrum, making them potential candidates for the defect origin of broad luminescence bands in $β$-Ga 2 O 3 .

36 MATERIALS SCIENCE↗

Positron orbit effects during injection and confinement in a magnetic dipole trap

Lossless injection of positrons into a magnetic dipole trap and their subsequent confinement have been demonstrated. Here, we investigate by numerical single-particle simulations how the radial distribution of positrons in the trap is affected by the measurement itself, the choice of injection parameters, the asymmetry of the electric potential, and by elastic collisions. The results are compared to experimental data. A comprehensive understanding of these effects is a milestone on the road to creating an electron–positron plasma in a trap with a levitating superconducting coil.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Non-neutral plasma manipulation techniques in development of a high-capacity positron trap

Preliminary experiments have been performed toward the development of a multi-cell Penning–Malmberg trap for the storage of large numbers of positrons (≥10 10 e + ). We introduce the master-cell test trap and the diagnostic tools for first experiments with electrons. The usage of a phosphor screen to measure the z-integrated plasma distribution and the number of confined particles is demonstrated, as well as the trap alignment to the magnetic field ( B = 3.1 T) using the m = 1 diocotron mode. The plasma parameters and expansion are described along with the autoresonant excitation of the diocotron mode using rotating dipole fields and frequency chirped sinusoidal drive signals. We analyze the reproducibility of the excitation and use these findings to settle on the path for the next generation multi-cell test device.

Singer, M.↗

A trapping tolerant drain current based temperature measurement of β -Ga 2 O 3 MOSFETs

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga 2 O 3 MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K∙mm/W to be measured in Ga 2 O 3 MOSFETs. However, neglecting the effect of trapping causes an error of ~15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

In situ detection of RF breakdown on microfabricated surface ion traps

We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Trapping and actively transporting single particles of arbitrary properties in low-pressure rf plasmas with and without a magnetic field

We report the experimental realization of optical trapping and controlled manipulations of single particles of arbitrary properties, e.g., nano- to micrometer in size, transparent spheres to strongly light absorbing nonspherical particles, in low-pressure rf plasmas. First, we show optical trapping and transport of single particles in an unmagnetized rf plasma. Then, we show similar observations in a weakly magnetized rf plasma. This is the first demonstration of actively transporting (pushing and pulling) light-absorbing, nonspherical single particles in plasmas. The result suggests that optically trapped, actively controlled, single plasma dust particles (not limited to those externally sampled spheres) could be an in situ micro-probe for dusty plasma and magnetized dusty plasma diagnostics.

Physics↗

On the effect of flux-surface shaping on trapped-electron modes in quasi-helically symmetric stellarators

Using a novel optimization procedure, it has been shown that the Helically Symmetric eXperiment stellarator can be optimized for reduced trapped-electron-mode (TEM) instability [Gerard et al., Nucl. Fusion 63, (2023) 056004]. Presently, with a set of 563 experimental candidate configurations, gyrokinetic simulations are performed to investigate the efficacy of available energy EA, quasi-helical symmetry, and flux-surface shaping parameters as metrics for TEM stabilization. It is found that lower values of EA correlate with reduced growth rates, but only when separate flux-surface shaping regimes are considered. Moreover, configurations with improved quasi-helical symmetry demonstrate a similar reduction in growth rates and less scatter compared to EA. Regarding flux-surface shaping, a set of helical shaping parameters is introduced that show increased elongation is strongly correlated with reduced TEM growth rates, however, only when the quasi-helical symmetry is preserved. Using a newly derived velocity-space-averaged TEM resonance operator, these trends are analyzed to provide insights into the physical mechanism of the observed stabilization. For elongation, stabilization is attributed to geometric effects that reduce the destabilizing particle drifts across the magnetic field. Regarding quasi-helical symmetry, the TEM resonance in the maximally resonant trapping well is shown to increase as the quasi-helical symmetry is broken, and breaking quasi-helical symmetry increases the prevalence of highly resonant trapping wells. While these results demonstrate the limitations of using any single metric as a linear TEM proxy, it is shown that quasi-helical symmetry and plasma elongation are highly effective metrics for reducing TEM growth rates in helical equilibria.

Physics↗

Spectroscopy of atoms in an optical dipole trap using spectrally selective heating by a probe laser field

Spectral properties of atoms localised in an optical dipole trap are studied using the method of spectrally selective heating by a probe field. The method is based on measuring the number of atoms in a trap after they interact with a probe field. The dependence of the number of atoms on the frequency of the probe field fully characterises the shift and width of the spectral absorption line of trapped atoms. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Stress-induced hydrogen self-trapping in tungsten

The molecular dynamics simulations of trapping of hydrogen atoms in tungsten are presented. The simulations reveal formation of platelet-like structures of self-trapped hydrogen induced by stresses in tungsten, in particular, those produced by dislocations, at the interstitial hydrogen concentrations ~0.3-1 at.%. The spontaneous hydrogen platelet formation in absence of dislocations and external stresses has been also observed at the higher hydrogen concentrations ~10 at.%. It is shown that the platelets can retain substantial quantities of hydrogen, exceeding trapping capacity of other non-cavity defects in tungsten. The properties of the hydrogen latelets formed in tungsten under various conditions are assessed and a formation mechanism is proposed. A model of hydrogen retention by the dislocation-induced structures is also presented, which describes retained quantities and outgassing dynamics of hydrogen in plasma exposed tungsten samples.

08 HYDROGEN↗

Trapping in irradiated p + -n-n - silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200μm thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3 x 10 15 neq/cm 2 . Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. Furthermore, the effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Stability of trapped solutions of a nonlinear Schrödinger equation with a nonlocal nonlinear self-interaction potential

This work focuses on the study of the stability of trapped soliton-like solutions of a (1 + 1)-dimensional nonlinear Schrödinger equation (NLSE) in a nonlocal, nonlinear, self-interaction potential of the form [|Ψ(x,t)| 2 +|Ψ(-x,t)| 2 ] κ where κ is an arbitrary nonlinearity parameter. Although the system with κ = 1 (i.e. fully integrable case) was first reported by Yang (2018 Phys. Rev. E 98 042202), here in the present work, we extend this model to the one in which κ is arbitrary. This allows us to compare the stability properties of the now trapped solutions to previously found solutions of the more usual NLSE with κ ≠ 1 which are moving soliton solutions. We show that there is a simple, one-component, nonlocal Lagrangian and corresponding action governing the dynamics of the system. Using a collective coordinate method derived from the action as well as assuming the validity of Derrick's theorem, we find that these trapped solutions are stable for 0 < κ < 2 and unstable when κ > 2. At the critical value of κ, i.e. κ = 2, the solution can either collapse or blowup linearly in time when q 0 = 0, where q 0 is the center of the initial density ρ(x, t = 0) = ψ*ψ of the solution. For q 0 ≠ 0 the displaced solution collapses. When κ > 2 initial small displacements from the origin also lead to collapse of the wave function. This phenomenon is not seen in the usual NLSE.

collective coordinates↗

An open-endcap blade trap for radial-2D ion crystals

We present the design and experimental demonstration of an open-endcap radio frequency trap to confine ion crystals in the radial-two dimensional (2D) structural phase. The central axis of the trap is kept free of obstructions to allow for site-resolved imaging of ions in the 2D crystal plane, and the confining potentials are provided by four segmented blade electrodes. We discuss the design challenges, fabrication techniques, and voltage requirements for implementing this open-endcap trap. Finally, we validate its operation by confining up to 29 ions in a 2D triangular lattice, oriented such that both in-plane principal axes of the 2D crystal lie in the radial direction.

74 ATOMIC AND MOLECULAR PHYSICS↗

Hybrid quantum simulations with qubits and qumodes on trapped-ion platforms

We explore the feasibility of gate-based hybrid quantum computing using both discrete (qubit) and continuous (qumode) variables on trapped-ion platforms. Trapped-ion systems have demonstrated record one- and two-qubit gate fidelities and long qubit coherence times, while qumodes, which can be represented by the collective vibrational modes of the ion chain, have remained relatively unex- plored for their use in computing. Using numerical simulations, we show that high-fidelity hybrid gates and measurement operations can be achieved for existing trapped-ion quantum platforms. As an exemplary application, we consider quantum simulations of the Jaynes-Cummings-Hubbard model, which is given by a one-dimensional chain of interacting spin and boson degrees of free- dom. Using classical simulations, we study its real-time evolution and develop a suitable variational quantum algorithm for ground state preparation. Furthermore, our results motivate further studies of hybrid quantum computing in this context, which may lead to direct applications in condensed matter and fundamental particle and nuclear physics.

Lower-dimensional field theories↗

Time fractals and discrete scale invariance with trapped ions

We show that a one-dimensional chain of trapped ions can be engineered to produce a quantum mechanical system with discrete scale invariance and fractal-like time dependence. By discrete scale invariance we mean a system that replicates itself under a rescaling of distance for some scale factor, and a time fractal is a signal that is invariant under the rescaling of time. These features are reminiscent of the Efimov effect, which has been predicted and observed in bound states of three-body systems. We demonstrate that discrete scale invariance in the trapped ion system can be controlled with two independently tunable parameters. We also discuss the extension to n-body states where the discrete scaling symmetry has an exotic heterogeneous structure. Furthermore, the results we present can be realized using currently available technologies developed for trapped ion quantum systems.

74 ATOMIC AND MOLECULAR PHYSICS↗