Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “thin contacts”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Multiport high-pressure synchrotron x-ray microscopy cell (CRADA Final Report)

The LBNL team developed a multiport cell allowing for fluid flow, with electrical contacts for sample bias, and with reference electrodes. The cell is currently installed and operating in beam-line 11.0.2 of the ALS, the Berkeley Synchrotron. The cell is closed by a membrane consisting of several stacked layers of graphene (1 to 3). The graphene membrane is supported on a 100 nm thick Si3N4 membrane covered with a 20 nm thin gold film for improved adhesion of the graphene and to ensure electrical conductivity. The Si3N4 film is perforated with a periodic array of holes 1 to 2 micrometers diameter. The cell can withhold an internal pressure (gas or liquid) of up to 10 atmospheres for in situ/operando studies using X-ray Photoelectron emission (XPS), and X-ray Absorption Spectroscopy (XAS). It is also ideal for tip-enhanced nano-Infrared Spectroscopy studies of molecules at the interface between the graphene and the liquid or gas filling the cell. Materials studied in the LBNL laboratory are in the form of nanoparticles, or thin films (few nm) deposited on the side of the graphene membrane facing the solution or gas inside the cell.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗
DOE OSTI2022

Electrochemical device comprising thin porous metal sheet

Electrochemical device using thin micro-porous metal sheets. The porous metal sheet may have a thickness less than 200 μm, provides three-dimensional networked pore structures of pore sizes in the range of 2.0 nm to 5.0 μm, and is electrically conductive. The micro-porous metal sheet is used for positively and/or negatively-charged electrodes by providing large specific contact surface area of reactants/electron. Nano-sized catalyst or features can be added inside pores of the porous metal sheet of pore sizes at sub- and micrometer scale to enhance the reaction activity and capacity. Micro-porous ceramic materials may be coated on the porous metal sheet at a thickness of less than 40 μm to enhance the functionality of the porous metal sheet and may function as a membrane separator. The electrochemical device may be used for decomposing molecules and for synthesis of molecules such as synthesis of ammonia from water and nitrogen molecules.

Liu, Wei↗
DOE OSTI2024

Boosting Thermoelectric Performance in Nanocrystalline Ternary Skutterudite Thin Films through Metallic CoTe 2 Integration

Metal–semiconductor nanocomposites have emerged as a viable strategy for concurrently tailoring both thermal and electronic transport properties of established thermoelectric materials, ultimately achieving synergistic performance. In this investigation, a series of nanocomposite thin films were synthesized, embedding metallic cobalt telluride (CoTe 2 ) nanophase within the nanocrystalline ternary skutterudite (Co(Ge 1.22 Sb 0.22 )Te 1.58 or CGST) matrix. Our approach harnessed composition fluctuation-induced phase separation and in situ growth during thermal annealing to seamlessly integrate the metallic phase. The distinctive band structures of both materials have developed an ohmic-type contact characteristic at the interface, which raised carrier density considerably yet negligibly affected the mobility counterpart, leading to a substantial improvement in electrical conductivity. The intricate balance in transport properties is further influenced by the metallic CoTe 2 phase’s role in diminishing lattice thermal conductivity. The presence of the metallic phase instigates enhanced phonon scattering at the interface boundaries. Consequently, a 2-fold enhancement in the thermoelectric figure of merit (zT ~ 1.30) is attained with CGST-7 wt. % CoTe 2 nanocomposite film at 655 K compared to that of pristine CGST.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit promising electronic properties for high-performance field-effect transistors (FETs). The feasibility of fabricating FETs with GNRs (GNRFETs) has been demonstrated, with ongoing efforts aimed at further improving their performance. However, their long-term stability and reliability remain unexplored, which is as important as their performance for practical applications. In this work, we fabricated short-channel FETs with nine-atom-wide armchair GNRs (9-AGNRFETs). We revealed that the on-state (/ ON ) current performance of the 9-AGNRFETs deteriorates significantly over consecutive full transistor on and off logic cycles, which has neither been demonstrated nor previously considered. To address this issue, we deposited a thin ~10 nm thick atomic layer deposition (ALD) layer of aluminum oxide (Al 2 O 3 ) directly on these devices. The integrity, compatibility, electrical performance, stability, and reliability, of the GNRFETs before and/or after Al 2 O 3 deposition were comprehensively studied. The results indicate that the observed decline in electrical device performance is most likely due to the degradation of contact resistance over multiple measurement cycles. We successfully demonstrated that the devices with the Al 2 O 3 layer operate well up to several thousand continuous full cycles without any degradation. Our study offers valuable insights into the stability and reliability of GNR transistors, which could facilitate their large-scale integration into practical applications.

36 MATERIALS SCIENCE↗
NASA NTRS1986

What have we learned about galaxies through large computations?

Numerical models permit modelling processes within galaxies that are seemingly beyond the reach of physical contact or close-up viewing from different angles. N-body equations permit simple computations of the interactions of individual stars within galaxies, but the motions of these objects feature nonlinear characteristics because of the forces exerted by the complex as a whole which are not amenable to examination with Newtonian laws of force. The models have, however, revealed that thin disk galactic are not stable forms, that barlike structures rotating end-over-end are more stable structures, and that galactic contraction occurs during collisions between galaxies. Internal effects have been successfully predicted for galaxies which are part of clusters, growth rate disturbances due to the expansion of the Universe have been quantified as 2-3 percent and dynamical friction has been shown to damage galaxies which are sliding into background material.

Miller, R. H.↗
NASA NTRS2009

Improved Blackbody Temperature Sensors for a Vacuum Furnace

Some improvements have been made in the design and fabrication of blackbody sensors (BBSs) used to measure the temperature of a heater core in a vacuum furnace. Each BBS consists of a ring of thermally conductive, high-melting-temperature material with two tantalum-sheathed thermocouples attached at diametrically opposite points. The name "blackbody sensor" reflects the basic principle of operation. Heat is transferred between the ring and the furnace heater core primarily by blackbody radiation, heat is conducted through the ring to the thermocouples, and the temperature of the ring (and, hence, the temperature of the heater core) is measured by use of the thermocouples. Two main requirements have guided the development of these BBSs: (1) The rings should have as high an emissivity as possible in order to maximize the heat-transfer rate and thereby maximize temperature-monitoring performance and (2) the thermocouples must be joined to the rings in such a way as to ensure long-term, reliable intimate thermal contact. The problem of fabricating a BBS to satisfy these requirements is complicated by an application-specific prohibition against overheating and thereby damaging nearby instrumentation leads through the use of conventional furnace brazing or any other technique that involves heating the entire BBS and its surroundings. The problem is further complicated by another application-specific prohibition against damaging the thin tantalum thermocouple sheaths through the use of conventional welding to join the thermocouples to the ring. The first BBS rings were made of graphite. The tantalum-sheathed thermocouples were attached to the graphite rings by use of high-temperature graphite cements. The ring/thermocouple bonds thus formed were found to be weak and unreliable, and so graphite rings and graphite cements were abandoned. Now, each BBS ring is made from one of two materials: either tantalum or a molybdenum/titanium/zirconium alloy. The tantalum-sheathed thermocouples are bonded to the ring by laser brazing. The primary advantage of laser brazing over furnace brazing is that in laser brazing, it is possible to form a brazed connection locally, without heating nearby parts to the flow temperature of the brazing material. Hence, it is possible to comply with the prohibition against overheating nearby instrumentation leads. Also, in laser brazing, unlike in furnace brazing, it is possible to exert control over the thermal energy to such a high degree that it becomes possible to braze the thermocouples to the ring without burning through the thin tantalum sheaths on the thermocouples. The brazing material used in the laser brazing process is a titanium-boron paste. This brazing material can withstand use at temperatures up to about 1,400 C. In thermal-cycling tests performed thus far, no debonding between the rings and thermocouples has been observed. Emissivity coatings about 0.001 in. (.0.025 mm) thick applied to the interior surfaces of the rings have been found to improve the performance of the BBS sensors by raising the apparent emissivities of the rings. In thermal-cycling tests, the coatings were found to adhere well to the rings.

Farmer, Jeff↗
DOE OSTI2021

Picometer sensitivity metrology for EUV absorber phase

With growing interest in EUV attenuated phase-shift masks due to their superior image quality for applications such as dense contact and pillar arrays, it is becoming critical to model, measure, and monitor the intensity and relative phase of multilayer and absorber reflections. We present a solution based on physical modeling of reflectometry data, which can achieve single picometer phase precision and sensitivity to changes in average film thickness below one atomic monolayer. We measure absorber and multilayer reflectivity to determine thin-film parameters with a multidimensional optimization and then acquire a new measurement of either multilayer or absorber to determine perturbations in surface contamination thickness. While it is difficult to assess the accuracy of the first step, the simplicity of the second step allows us to characterize our sensitivity to changes in contamination thickness. Thus, we apply this analysis using an initial set of measurements and repeated measurements after a period of storage. For the multilayer, the total contamination growth was 1068 pm, which occurred almost exclusively during storage (1085 pm) and decreased very slightly during repeated measurements (-17 pm). For the absorber, the behavior was quite different, with a total growth of 126 pm, which occurred much less during storage (28 pm) and primarily during repeated measurements (98 pm). Ultimately, the change in relative phase (absorber minus multilayer) was -0.86 deg for the multilayer and -1.12 deg for the absorber. We estimate the precision of the surface contamination measurement to be 3σ < 6 pm for measuring thickness and 3σ < 0.2 deg for measuring phase.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Reducing Run-In Wear Of Ceramic-Based Coatings

Silver surface layer helps rough ceramic slide smoothly. Thin film is magnetron-sputtered onto PS200, self-lubricating composite coating containing mixture of chromium carbide, silver, and barium fluoride/calcium fluoride eutectic. Carbide provides wear resistance, while silver and fluorides provide lubrication. Because both silver top coat and PS200 thermally and chemically stable oxidizing and reducing environments to 900 degrees C, combination appropriate as lubrication for cylinder-wall/piston-ring contacts in Stirling engines and for backup lubrication for gas lubricated journal bearings.

Dellacorte, Christopher↗
NASA NTRS2004

Gear Performance Improved by Coating

Gears, bearings, and other mechanical elements transmit loads through contacting surfaces. Even if properly designed, manufactured, installed, and maintained, gears and bearings will eventually fail because of the fatigue of the working surfaces. Economical means for extending the fatigue lives of gears and bearings are highly desired, and coatings offer the opportunity to engineer surfaces to extend the fatigue lives of mechanical components. A tungsten-containing diamondlike-carbon coating exhibiting high hardness, low friction, and good toughness was evaluated for application to spur gears. Fatigue testing was done at the NASA Glenn Research Center on both uncoated and coated spur gears. The results showed that the coating extended the surface fatigue lives of the gears by a factor of about 5 relative to the uncoated gears. For the experiments, a lot of spur test gears made from AISI 9310 gear steel were case-carburized and ground to aerospace specifications. The geometries of the 28-tooth, 8-pitch gears were verified as meeting American Gear Manufacturing Association (AGMA) quality class 12. One-half of the gears were randomly selected for coating. The method of coating was selected to achieve desired adherence, toughness, hardness, and low-friction characteristics. First the gears to be coated were prepared by blasting (vapor honing) with Al2O3 particles and cleaning. Then, the gears were provided with a thin adhesion layer of elemental chromium followed by magnetron sputtering of the outer coating consisting of carbon (70 at.%), hydrogen (15 at.%), tungsten (12 at.%), and nickel (3 at.%) (atomic percent at the surface). In total, the coating thickness was about 2.5 to 3 microns. As compared with the steel substrate, the coated surface was harder by a factor of about 2 and had a smaller elastic modulus. All gears were tested using a 5-centistoke synthetic oil, a 10,000-rpm rotation speed, and a hertzian contact stress of at least 1.7 GPa (250 ksi). Tests were run until either surface fatigue occurred or 300 million stress cycles were completed. Tests were run using either a pair of uncoated gears or a pair of coated gears (coated gears mated with uncoated gears were not evaluated). The fatigue test results, shown on Weibull coordinates in the graph, demonstrate that the coating provided substantially longer fatigue lives even though some of the coated gears endured larger stresses. The increase in fatigue life was a factor of about 5 and the statistical confidence for the improvement is high (greater than 99 percent). Examination of the tested gears revealed substantial reductions of total wear for coated gears in comparison to uncoated gears. The coated gear surface topography changed with running, with localized areas of the tooth surface becoming smoother with running. Theories explaining how coatings can extend gear fatigue lives are research topics for coating, tribology, and fatigue specialists. This work was done as a partnership between NASA, the U.S. Army Research Laboratory, United Technologies Research Corporation, and Sikorsky Aircraft.

Krantz, Timothy L.↗
DOE OSTI2023

A clean ballistic quantum point contact in strontium titanate

The perovskite oxide strontium titanate (SrTiO 3 ) combines electrostatic tunability, superconductivity and spin–orbit coupling, and is of potential use in the development of quantum devices. However, exploring quantum effects in SrTiO 3 nanostructures is challenging because of the presence of disorder. Here, in this work, we report high-mobility, gate-tunable devices in SrTiO 3 that have ballistic constrictions and clean normal-state conductance quantization. Our devices are based on SrTiO 3 two-dimensional electron gas channels that have a thin hafnium oxide barrier layer between the channel and an ionic liquid gate. Conductance plateaus show twofold degeneracy that persists for magnetic fields of at least 5 T. This is above what is expected from the g factors extracted at high fields and could be a signature of electron pairing extending outside the superconducting regime.

36 MATERIALS SCIENCE↗
NASA NTRS1995

HTS thin films: Passive microwave components and systems integration issues

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and spacebased systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment 2 (HTSSE-2). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Miranda, F. A.↗
DOE OSTI2022

Avoiding CO 2 Improves Thermal Stability at the Interface of Li 7 La 3 Zr 2 O 12 Electrolyte with Layered Oxide Cathodes

Abstract Solid‐state batteries promise higher energy densities and better safety than Li‐ion batteries with liquid electrolytes. However, the interface between solid electrolyte and cathode is unstable at the elevated temperatures that are needed while sintering to achieve good bonding between ceramic components. Here, the hypothesis is that, the gas environment, especially the presence of CO 2, is critical in determining the stability of the solid electrolyte–cathode interface. The effect of gas species on the interface is systematically probed, by a using Li 7 La 3 Zr 2 O 12 (LLZO) solid electrolyte with a thin film LiNi 0.6 Mn 0.2 Co 0.2 O 2 cathode as a model system to enable interface sensitivity. Detrimental phases formed at the interface and their onset conditions are identified by X‐ray absorption spectroscopy, X‐ray diffraction, and Gibbs free energy analysis. As a result, removing CO 2 and minimizing H 2 O(g) during sintering is necessary to obtain good contact at the LLZO|cathode interface without forming secondary phases. Sintering in O 2 is ideal, yielding excellent chemical stability and low interfacial resistance. Secondary phases also do not form in N 2, but oxygen loss occurs at elevated temperatures. The interfacial resistance obtained upon sintering in pure O 2 is comparable to the lowest values at LLZO interfaces with protective coatings, but here without the need for interface coatings.

25 ENERGY STORAGE↗
DOE OSTI2025

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. The device characteristics reveal a strong dependence on operating temperature, leading to an ON/OFF current ratio of ∼10× at ±3 V and 600 °C. Extensive thermal cycling (25 cycles over 100 h) between room temperature and 350 °C shows that leakage currents stabilize after the initial ten cycles. This stabilization is likely due to the formation of a thin PtOx layer at the Pt/β-Ga2O3 interface, as confirmed by high-resolution scanning transmission electron microscopy. Further exposure to a constant 350 °C environment for 10 h reveals a slight increase in the leakage current from 10−7 to 10−6 A at −5 V and degradation of the forward current, due to potential thermodynamic instability of the Ohmic contacts. This study provides insights into the changes in the Pt/β-Ga2O3 diode performance with thermal stress, offering a basis for predicting the device’s operational reliability at high temperatures for sensing and power applications.

08 HYDROGEN↗
DOE OSTI2022

Analysis of an Elasto-Hydrodynamic Seal by Using the Reynolds Equation

This paper reports numerical studies of an Elasto-Hydrodynamic (EHD) seal, which is being developed for supercritical CO2 (sCO2) turbomachinery applications. Current sCO2 turbomachinery suffers from high leakage rates, which is creating a major roadblock to the full realization of sCO2 power technology. The high leakage rates not only penalize the efficiencies but also create environmental concerns due to greenhouse effects caused by the increased CO2 discharge to the atmosphere. The proposed EHD seal needs to work at elevated pressures (10–35 MPa) and temperatures (350–700 °C) with low leakage and minimal wear. The unique mechanism of the EHD seal provides a self-regulated constriction effect to restrict the flow without substantial material contact, thereby minimizing leakage and wear. This work utilizes a physics-based modeling approach. The flow through the gradually narrowing seal clearance is modeled by the well-known Reynolds equation in EHD lubrication theory, while the deformation of the seal is modeled by using the governing equations of three-dimensional solid mechanics. As for the solution methodology, COMSOL’s Thin-Film Flow and Solid Mechanics modules were employed with their powerful capabilities. The numerical results were presented and discussed. It was observed that the Reynolds equation fully coupled with the surface deformation was able to successfully capture the constriction effect. The maximum and minimum leakages were calculated to be 2.25 g/s and 0.1 g/s at P = 5.5 MPa and P = 11 MPa for the design seal, respectively. It was interesting to observe that the seal leakage followed a quadratic trend with increasing pressure differential, which can become advantageous for high-pressure applications such as sCO2 power generation technology.

42 ENGINEERING↗
NASA NTRS1990

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Nouhi, Akbar↗
NASA NTRS1995

HTS Thin Films: Passive Microwave Components and Systems Integration Issues

The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems, improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper, we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

Miranda, F. A.↗
NASA NTRS1988

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗