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At least 667 records · Page 37

Impact of secondary particle size and two-layer architectures on the high-rate performance of thick electrodes in lithium-ion battery pouch cells

Increasing lithium-ion battery gravimetric energy density to > 300 Wh/kg, while simultaneously meeting a cost target of $80/kWh, is of paramount importance to increasing the driving range and affordability of electric vehicles. One way to address this goal is to reduce inactive components by increasing electrode areal capacities, but conventional thick electrode designs typically perform poorly at high discharge rates due to Li + mass transport limitations. Here we compare the rate capability and cycle life of NMC 532/graphite pouch cells made with five different thick cathode and anode designs paired together in 25 combinations. We find that using different particle sizes to structure both the cathode and anode architectures in two-layer configurations results in a 2X capacity improvement over the worst-performing combination at high discharge rates (97 vs. 46 mAh/g at 2C). These different cathode/anode designs also translate to different cycle life performance, with many cells cycled at C/2 achieving ~80% capacity retention after 1000 cycles, and cells cycled at 2C showing different degrees of capacity fade. Altogether, these results demonstrate that simple, scalable changes in electrode design can significantly improve the performance of thick electrodes for high energy density batteries.

25 ENERGY STORAGE↗

Properties of Cu-doped ZnO films by RF sputtering method: Thickness dependence

We present results concerning the thickness dependence of structural, morphological and optical properties of the Zn{sub 0.98}Cu{sub 0.02}O films deposited on glass substrates using radio frequency (RF) sputtering method. The microstructure and the chemical state of oxygen, copper and zinc in ZnO and Zn{sub 0.98}Cu{sub 0.02}O films were investigated by X-ray diffraction spectroscopy (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The results indicate that Zn{sub 0.98}Cu{sub 0.02}O films are the wurtzite structure with strong c-axis orientation. Crystallinity of the films is closely related to the film thickness. With increasing film thickness, there are more surface (mainly nanopores) defects existing in the Zn{sub 0.98}Cu{sub 0.02}O films and surface roughness increases. XRD and XPS data show that the valence state of copper in the Zn{sub 0.98}Cu{sub 0.02}O films is Cu{sup 2+}. The transparency of all films is more than 85% in the visible region.

36 MATERIALS SCIENCE↗

Thickness effect on the structural and electrical properties of poly-SiGe films

Graphical abstract: - Highlights: • Stress and Young's modulus of poly-SiGe film are linked to the grain columnar structure. • The above properties remain unchanged for poly-SiGe films thicker than 40 nm. • The point of transition is close to the electron mean free path for SiGe. • Both the resistivity and Hall mobility follow a similar trend. - Abstract: As lateral dimensions of electromechanical devices are scaled down to length scales comparable to electron mean free paths, the influence of thickness effect on their properties becomes sine qua non. This paper presents a detailed study of thickness effect on the Young's modulus, residual stress, resistivity and Hall mobility of ultrathin poly-Si{sub 11}Ge{sub 89} films deposited by low pressure chemical vapour deposition. The Young's moduli for the films thicker than ∼40 nm are close to the bulk value (135 GPa) while those of the thinner films are much lower. The reduction in resistivity and subsequent improved Hall mobility as thickness increases are discussed in light of surface morphology which is evident from atomic microscopy images. The near constant values of Young's modulus, resistivity and Hall mobility for the films thicker than ∼40 nm are attributed to the columnar grain structure as confirmed by the transmission electron microscopy images.

36 MATERIALS SCIENCE↗

Thickness-dependent optical properties in compressively strained BiFeO{sub 3}/LaAlO{sub 3} films grown by pulsed laser deposition

Graphical abstract: - Highlights: • BFO with various thicknesses was grown on LAO substrates by pulsed laser deposition. • The structure and compressive strains were clarified via Raman scattering. • The charge transfer excitation was blue shifted with increasing compressive strain. • The compressive strain affects the distortion of Fe{sup 3+} local environment and O 2p states. - Abstract: Bismuth ferrite (BiFeO{sub 3}) films with various thicknesses were epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The X-ray diffraction and Raman scattering spectra reveal that the films were highly (11{sup ¯}1) oriented with the single phase. With increasing the thickness, the compressive strain decreases and the strain ratios between the film and bulk crystal are evaluated to be 1.75, 1.57, and 1. Moreover, the compressive strain induces band gap shrinkage from 2.7 to 2.65 eV, while the charge transfer transition energy increases from 3.5 to 4.1 eV. It could be due to the shift of O 2p states and the variation of local Fe{sup 3+} crystal field.

36 MATERIALS SCIENCE↗

A simple formula to determine the bolus thickness on an oblique surface

For certain clinical situations such as breast treatments, a bolus is used and must be accounted for in monitor unit calculations. Because of the oblique incidence involved, the thickness of bolus traversed by the radiation beam, as opposed to its nominal thickness, must be used. Using principles of geometry, a simple method is derived to calculate the thickness of bolus for these calculations.

61 RADIATION PROTECTION AND DOSIMETRY↗

Prediction of the thickness of the compensator filter in radiation therapy using computational intelligence

In this study, artificial neural networks (ANNs) and adaptive neuro-fuzzy inference system (ANFIS) are investigated to predict the thickness of the compensator filter in radiation therapy. In the proposed models, the input parameters are field size (S), off-axis distance, and relative dose (D/D{sub 0}), and the output is the thickness of the compensator. The obtained results show that the proposed ANN and ANFIS models are useful, reliable, and cheap tools to predict the thickness of the compensator filter in intensity-modulated radiation therapy.

61 RADIATION PROTECTION AND DOSIMETRY↗

High-speed friction stir butt welding of 25.4 mm thick 7175-T79 aluminum alloy

This presents the first experimental demonstration of friction stir butt welding of 25.4 mm thick high-strength, precipitate-strengthened 7XXX aluminum alloy at a welding speed above 500 mm/min and penetration depth greater than 10 mm. Tool pin threads that terminate away from the shoulder region, helped mitigate nearby stress concentration during tool traversing, enabling a higher welding speed while avoiding pin fracture near shoulder. Two kinds of welds—one-sided with full penetration of the plate thickness and double-sided with partial penetration of the plate thickness—were conducted. Significant grain refinement (grain size 1.3 ± 0.8 µm) was evident at the junction of double-sided friction stir welding (FSW) compared to other regions of weld-nugget or base material. Cross-weld tensile testing with digital image correlation revealed high local strains at the junction of double-sided FSW before macro-yield. This strain concentration impeded the typical early necking on advancing/retreating sides of FSW joints, improving the yield strength of as-welded double-sided FSW by 20–24% over slow- to medium-speed one-sided FSW. In conclusion, the joint efficiency of as-welded, double-sided high-speed FSW was about 76% with respect to the base material’s ultimate tensile strength.

36 MATERIALS SCIENCE↗

Simultaneous orientation and thickness mapping in transmission electron microscopy

In this paper we introduce an approach for simultaneous thickness and orientation mapping of crystalline samples by means of transmission electron microscopy. We show that local thickness and orientation values can be extracted from experimental dark-field (DF) image data acquired at different specimen tilts. The method has been implemented to automatically acquire the necessary data and then map thickness and crystal orientation for a given region of interest. We have applied this technique to a specimen prepared from a commercial semiconductor device, containing multiple 22 nm technology transistor structures. The performance and limitations of our method are discussed and compared to those of other techniques available.

36 MATERIALS SCIENCE↗

Versailles Project on Advanced Materials and Standards Interlaboratory Study on Measuring the Thickness and Chemistry of Nanoparticle Coatings Using XPS and LEIS

We report the results of a VAMAS (Versailles Project on Advanced Materials and Standards) inter-laboratory study on the measurement of the shell thickness and chemistry of nanoparticle coatings. Peptide-coated gold particles were supplied to laboratories in two forms: a colloidal suspension in pure water and; particles dried onto a silicon wafer. Participants prepared and analyzed these samples using either X-ray photoelectron spectroscopy (XPS) or low energy ion scattering (LEIS). Careful data analysis revealed some significant sources of discrepancy, particularly for XPS. Degradation during transportation, storage or sample preparation resulted in a variability in thickness of 53%. The calculation method chosen by XPS participants contributed a variability of 67%. However, variability of 12% was achieved for the samples deposited using a single method and by choosing photoelectron peaks that were not adversely affected by instrumental transmission effects. The study identified a need for more consistency in instrumental transmission functions and relative sensitivity factors, since this contributed a variability of 33%. The results from the LEIS participants were more consistent, with variability of less than 10 % in thickness and this is mostly due to a common method of data analysis. The calculation was performed using a model developed for uniform, flat films and some participants employed a correction factor to account for the sample geometry, which appears warranted based upon a simulation of LEIS data from one of the participants and comparison to the XPS results.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS 2 on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. As a result, band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Thickness-Dependent Interlayer Charge Transfer in MoSe 2 /MoS 2 Heterostructures Studied by Femtosecond Transient Absorption Measurements

We report observations of a strong thickness dependence for charge transfer (CT) from MoSe 2 to MoS 2 , as evidenced by transient absorption measurements. By time-resolving CT from MoSe 2 monolayers (1Ls) to MoS 2 flakes of varying thicknesses, including 1L, bilayer (2L), and trilayer (3L), we find that the CT time is several picoseconds in the 1L-MoSe 2 /3L-MoS 2 heterostructure, which is much longer than that of 1L-MoSe 2 /1L-MoS 2 and 1L-MoSe 2 /2L-MoS 2 heterostructures. In addition, the recombination lifetime of the interlayer excitons in the 1L/3L heterostructure is several times longer than that of 1L/1L and 1L/2L heterostructures, reaching 800 ps. Furthermore, we show that a prepulse can reduce the CT time and enhance the interlayer exciton recombination in the 1L/3L heterostructure. Furthermore, these findings illustrate that layer thickness can be an important parameter to control the CT property of van der Waals heterostructures. These experimental results also provide important information for further refining the understanding of the physical mechanisms of CT in van der Waals heterostructures.

36 MATERIALS SCIENCE↗

Evidence That Sharp Interfaces Suppress Recombination in Thick Organic Solar Cells

Commercialization and scale-up of organic solar cells (OSCs) using industrial solution printing requires maintaining maximum performance at active-layer thicknesses >400 nm – a characteristic still not generally achieved in non-fullerene acceptor OSCs. NT812:PC71BM is a rare system whose performance increases up to these thicknesses due to highly suppressed charge recombination relative to the classic Langevin model. The suppression in this system, however, uniquely depends on device processing, pointing towards the role of nano-morphology. We investigate the morphological origins of this suppressed recombination by combining results from a suite of X-ray techniques. We are surprised to find that while all investigated devices are composed of pure, similarly aggregated nanodomains, Langevin reduction factors can still be tuned from ~2 to >1000. This indicates that pure aggregated phases are insufficient for non-Langevin (reduced) recombination. Instead, we find that large well-ordered conduits and, in particular, sharp interfaces between domains appear to help to keep opposite charges separated and percolation pathways clear for enhanced charge collection in thick active layers. To our knowledge, this is the first quantitative study to isolate donor/acceptor interfacial width correlated to non-Langevin charge recombination. Furthermore, this new structure-property relationship will be key to successful commercialization of printed OSCs at scale.

14 SOLAR ENERGY↗

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail.

36 MATERIALS SCIENCE↗

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

36 MATERIALS SCIENCE↗

Epitaxial {tau} phase MnAl thin films on MgO (001) with thickness-dependent magnetic anisotropy

In this study, ferromagnetic MnAl films were prepared by alternating Al/Mn quasi-monolayer deposition using a novel biased target ion beam deposition (BTIBD) technique. XRD results showed that the magnetic {tau} phase was well formed in MnAl thin films ({approx}10 nm), which grew epitaxially on single crystal MgO (001) substrates. The optimized saturation magnetization was {approx}394 emu/cc. Furthermore, we observed a thickness-dependent uniaxial anisotropy in ferromagnetic MnAl films, which was attributed to the change of the tetragonal lattice distortion as a function of film thickness. The relationship between the film thicknesses and saturation magnetizations suggested the existence of a magnetically dead layer {approx}2.7 nm with an extrapolated saturation moment around 523 emu/cc ({approx}1.90 {mu}{sub B}/Mn). This value has exceeded the experimental value in bulk materials and is close to the theoretically predicted magnetization ({approx}1.975 {mu}{sub B}/Mn).

36 MATERIALS SCIENCE↗

Metamaterial near-field sensor for deep-subwavelength thickness measurements and sensitive refractometry in the terahertz frequency range

We present a metamaterial-based terahertz (THz) sensor for thickness measurements of subwavelength-thin materials and refractometry of liquids and liquid mixtures. The sensor operates in reflection geometry and exploits the frequency shift of a sharp Fano resonance minimum in the presence of dielectric materials. We obtained a minimum thickness resolution of 12.5 nm (1/16 000 times the wavelength of the THz radiation) and a refractive index sensitivity of 0.43 THz per refractive index unit. We support the experimental results by an analytical model that describes the dependence of the resonance frequency on the sample material thickness and the refractive index.

36 MATERIALS SCIENCE↗

Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis

In this study, we present a technique to analyze side wall passivation layers formed on silicon sidewalls after plasma processing. The thickness and chemical composition are derived from angle resolved x-ray photoelectron spectroscopy analyses. It is a non-destructive, quasi in situ method to determine profiles of the thickness and the chemical composition of passivation layers in trenches up to an aspect ratio of about 3. The performance of this technique to quantify the passivation layer thickness is compared to a standard technique using secondary electron microscopy images with respect to two different samples and is found to be at least equivalent. The possible uncertainties and limitations of this technique are discussed as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optimizing diode thickness for thin-film solid state thermal neutron detectors

In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗