Vapor transport processes of Ge-chalcogenides under normal and reduced gravity conditions
Experimental and theoretical studies of the GeSe-GeI4 system revealed the multicomponent, multireaction nature of this system and the existence of a diffusion boundary layer; they also yielded equations for the prediction of diffusion limited mass transport rates. Vapor transport and crystal growth experiments of the GeSe-GeI4 and GeSe-Xe systems on earth and in a microgravity environment demonstrated the effects of convection and of microgravity on mass flux and crystal morphology. The surface and bulk morphology of GeSe crystals obtained for both systems in microgravity is considerably improved relative to ground-based specimens. Unexpected crystal growth phenomena were observed for the GeSe-Xenon system on recent Shuttle flights.