Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “quantum wells”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 667 records · Page 37

High power singlemode edge-emitting master oscillator power amplifier

An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 microns long single mode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at about 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW.

O'Brien, S.↗

Far-Infrared Imaging Radiometer

Inexpensive far-infrared imaging radiometer contains 128 X 128-picture-element array of AlxGa1-xAs quantum-well detectors. Potentially useful in remote sensing from airborne platforms. Industrial applications include rapid thermal imaging of heat-sensitive components. Astronomical applications include imaging of planets and Sun.

Forrest, Kathrine↗

Direct solar pumping of semiconductor lasers: A feasibility study

The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

Anderson, Neal G.↗

Advances in nonlinear optical materials and devices

The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

Byer, Robert L.↗

Frequency multipliers for millimeter and submillimeter wavelengths

All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.

Raisanen, Antti V.↗

Long-wave infrared (LWIR) detectors based on III-V materials

Future NASA missions for earth observation and planetary science require large photovoltaic detector arrays with high performance in the long wavelength region to 18 microns and at operating temperatures above 65 K where single-cycle long-life cryocoolers are being developed. Since these detector array requirements exceed the state of current HgCdTe technology, alternative detector materials are being investigated as a possible option for future missions. Advanced growth techniques (e.g., MBE and MOCVD) of column III-V semiconductors have opened opportunities for engineering new detector materials and device structures. The technical approaches under investigation at JPL (with university and industry participation) include: quantum well infrared photodetectors, heterojunction internal photoemission (HIP) photodetectors, type-II strained layer superlattices, and nipi doping superlattices. Each of these options are briefly described with some of their pros and cons. A more detailed description is given for the HIP approach being pioneered at JPL.

Maserjian, Joseph↗

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗

An x-band peeled HEMT amplifier

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Young, Paul G.↗

Materials, structures, and devices for high-speed electronics

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Woollam, John A.↗

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗

MQW Optical Feedback Modulators And Phase Shifters

Laser diodes equipped with proposed multiple-quantum-well (MQW) optical feedback modulators prove useful in variety of analog and digital optical-communication applications, including fiber-optic signal-distribution networks and high-speed, low-crosstalk interconnections among super computers or very-high-speed integrated circuits. Development exploits accompanying electro-optical aspect of QCSE - variation in index of refraction with applied electric field. Also exploits sensitivity of laser diodes to optical feedback. Approach is reverse of prior approach.

Jackson, Deborah J.↗

Transmission Electron Microscope Measures Lattice Parameters

Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.

Pike, William T.↗

High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

Duncan, Robert V.↗

Long-Wavelength 256 x 256 QWIP Hand-Held Camera

In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/Al(x)Ga(l-x)As quantum well infrared photodetectors (QWIPs), fabrication of random reflectors for efficient light coupling, and the demonstration of the first hand-held long-wavelength 256 x 256 QWIP focal plane array camera. Excellent imagery, with a noise equivalent differential temperature (NE Delta T) of 25 mK has been achieved.

Gunapala, S. D.↗

On the Dome Effect of Flux Radiometers to Radiative Forcing

Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 micrometers) and pyrgeometers (terrestrial, e.g., 4-50 micrometers) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate forcing. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 10-20 W m (exp -2)). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWIP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NE delta T) less than 0.1 K. The quality of pyranometer and pyrgeometer measurements can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. For example, we show a method to determine the "dome factor" (the longwave emission divided by the longwave transmission of a pyrgeometer dome) from field measurements. The results show, and are verified independently by the QWIP, that our dome factors of 0.59 and 0.90 are much smaller than the value of 4.0 assumed by the WMO (World Meteorological Organization). Data correction procedure and algorithm will be presented and discussed.

Tsay, S.-C.↗

On the Dome Effect of Flux Radiometers to Radiative Forcing

Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 microns) and pyrgeometers (terrestrial, e.g., 4-50 microns) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate forcing. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 10-20 W/square Meter). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWIP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NE delta T) less than 0.1 K. The quality of pyranometer and pyrgeometer measurements can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. For example, we show a method to determine the "dome factor" (the longwave emission divided by the longwave transmission of a pyrgeometer dome) from field measurements. The results show, and are verified independently by the QWIP, that our dome factors of 0.59 and 0.90 are much smaller than the value of 4.0 assumed by the WMO. Data correction procedure and algorithm will be presented and discussed.

Tsay, S.-C.↗

Characterization of Thermal Parameters for Improving Pyranometer and Pyrgeometer Measurements

Since the introduction of thermopile, pyranometers (solar, e.g., 0.3-3.0 micrometers) and pyrgeometers (terrestrial, e.g., 4-50 micrometers) have become instruments commonly used for measuring the broadband hemispherical irradiances at the surface in a long-term, monitoring mode for decades. These commercially available radiometers have been manufactured in several countries such as from the United States, Asia, and Europe, and are generally reliable and economical. These worldwide distributions of surface measurements become even more important in the era of Earth remote sensing in studying climate change. However, recent studies from field campaigns have pointed out that erroneous factors (e.g., temperature gradients between the filter dome and detector, emissivity of the thermopile) are responsible for the unacceptable level of uncertainty (e.g., 20 W m(exp -2)). Using a newly developed instrument of Quantum Well Infrared Photodetector (QWTP), we have characterized the brightness temperature fields of pyranometers and pyrgeometers under various sky conditions. The QWIP is based on the superlattice (GaAs/AlGaAs) technology and has a noise equivalent temperature (NEAT) less than 0.1 K. The quality of pyranometer and pyrgeometer measure- ments can be improved largely by applying proper knowledge of the thermal parameters affecting the operation of the thermopile systems. Data correction procedure and algorithm will be presented and discussed.

Tsay, Si-Chee↗

Growth and Characterization of III-V Semiconductors for Device Applications

The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

Williams, Michael D.↗