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Results for “oxide interfaces”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb

Room temperature irradiation of GaSb by 60 keV Ar{sup +}-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1 × 10{sup 17} ions cm{sup −2}), which get extended to form a continuous layer (at fluences ≥4 × 10{sup 17} ions cm{sup −2}). Systematic compositional analyses reveal the co-existence of Ga{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Breaking Simple Scaling Relations through Metal–Oxide Interactions: Understanding Room-Temperature Activation of Methane on M/CeO 2 (M = Pt, Ni, or Co) Interfaces

The clean activation of methane at low temperatures remains an eminent challenge and a field of competitive research. In particular, on late transition metal surfaces such as Pt(111) or Ni(111), higher temperatures are necessary to activate the hydrocarbon molecule, but a massive deposition of carbon makes the metal surface useless for catalytic activity. However, on very low-loaded M/CeO 2 (M = Pt, Ni, or Co) surfaces, the dissociation of methane occurs at room temperature, which is unexpected considering simple linear scaling relationships. This intriguing phenomenon has been studied using a combination of experimental techniques (ambient-pressure X-ray photoelectron spectroscopy, time-resolved X-ray diffraction, and X-ray absorption spectroscopy) and density functional theory-based calculations. The experimental and theoretical studies show that the size and morphology of the supported nanoparticles together with strong metal–support interactions are behind the deviations from the scaling relations. These findings point toward a possible strategy for circumventing scaling relations, producing active and stable catalysts that can be employed for methane activation and conversion.

03 NATURAL GAS↗
DOE OSTI2026

KTaO 3 -Based Supercurrent Diode

The supercurrent diode effect (SDE), characterized by nonreciprocal critical currents, represents a promising building block for future dissipationless electronics and quantum circuits. Realizing SDE requires breaking both time-reversal and inversion symmetry in the device. Here we use conductive atomic force microscope (c-AFM) lithography to pattern reconfigurable superconducting weak links (WLs) at the LaAlO 3 /KTaO 3 (LAO/KTO) interface. By deliberately engineering the WL geometry at the nanoscale, we realize SDE in these devices in the presence of modest out-of-plane magnetic fields. The SDE polarity can be reversed by simply changing the WL position, and the rectification efficiency reaches up to 13% under optimal magnetic field conditions. Time-dependent Ginzburg–Landau simulations reveal that the observed SDE originates from asymmetric vortex motion in the inversion-symmetry-breaking device geometry. This demonstration of SDE in the LAO/KTO system establishes a versatile platform for investigating and engineering vortex dynamics, forming the basis for engineered quantum circuit elements.

C-AFM lithography↗
DOE OSTI2025

Radiation-induced vacancy injection in heterogeneous multiphase materials

Understanding the synergy between corrosion and defect dynamics is a key consideration in the development of advanced materials for extreme environments. Here, we reveal a surprising phenomenon for the transport of point defects induced by irradiation in a heterogeneous multiphase structure of a metal and an oxide, similar to that formed under metal corrosion that takes place in most environments. Despite the confinement of the produced damage within the oxide, vacancies were injected into the unirradiated metal and coarsened with dose. Furthermore, the results show that the nature of the oxide layer dictates the defect evolution in the metal layer. This work reveals an interesting mechanism for point defect interactions in multiphase materials, with broad implications in many fields, while also emphasizing the complex coupling between corrosion and irradiation. Corrosion leads to the formation of multiphase materials, while irradiation enhances diffusion within the heterogeneous phases, which can impact corrosion rates.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al{sub 2}O{sub 3}/Si using hard x-ray photoelectron spectroscopy

Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al{sub 2}O{sub 3}, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al{sub 2}O{sub 3} layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Evidence for Interfacial Octahedral Coupling as a Route to Enhance Magnetoresistance in Perovskite Oxide Superlattices

Engineering octahedral rotations in oxide heterostructures is a promising route for controlling magnetic properties in perovskites, with recent work focusing on magnetic-ordering temperatures and magnetic anisotropies. Here the effects of interfacial octahedral coupling on magnetoresistance are demonstrated in a series of (La 0.7 Sr 0.3 MnO 3 ) n /(LaFeO 3 ) 10 superlattices grown on (001)- and (111)-oriented SrTiO 3 substrates. The different crystallographic orientations allow for the interfacial octahedral connectivity to be tuned, with weaker interfacial coupling present at the (001)-oriented than the (111)-oriented structures as revealed by density functional theory calculations. In n = 14 superlattices, the effect of orientation on the physical properties is minimal with both (001)- and (111)-oriented samples exhibiting similar magnetoresistance. As the fraction of interfacial volume within the LSMO layers is increased by decreasing n, the magnetoresistive behavior of the samples diverges with significantly larger magnetoresistance magnitudes present in the (111)-oriented superlattices. Furthermore, the results are consistent with octahedral coupling playing a greater role in the functional properties at (111)-heterointerfaces and demonstrate a structure-driven approach to tuning interfacial magnetoresistance in complex-oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
DOE OSTI2018

Extending the Service Life of High–Ni Layered Oxides by Tuning the Electrode–Electrolyte Interphase

As a high-energy-density cathode for Li-ion batteries, high-Ni layered oxides, especially with ultrahigh Ni-content, suffer from short lifespans, due in part to their unstable electrode–electrolyte interphase (EEI). Herein, the cycle life of LiNi 0.94 Co 0.06 O 2 is greatly extended by manipulating the EEI with a lithium bis(oxalate) (LiBOB) additive even when operated at a moderately high voltage (4.4 V vs Li/Li + ). Impressively, the capacity retention can be increased from 61 to 80% after 500 cycles in a full cell paired with a graphite anode. Additionally, the presence of LiBOB enables a robust boron- and oxygen-enriched EEI that effectively inhibits continual electrolyte decomposition and offers a stable cathode surface. Moreover, the layered architecture of the cathode–electrolyte interphase (CEI) and the anode–electrolyte interphase (AEI) at the nanometer scale is revealed by time-of-flight secondary ion mass spectrometry. It is demonstrated that the cathode surface chemistry can significantly influence the AEI both chemically and physically, and AEI is modified from a thick “three-layer” to a thin “two-layer” architecture by tuning the cathode surface chemistry with LiBOB. Finally, this work presents a correlation between the EEI characteristics and battery performance and highlights the significance of manipulating surface chemistry in developing stable high-energy-density Li-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2012

Oxide growth stress measurements and relaxation mechanisms for alumina scales grown on FeCrAlY: Oxide growth stress measurements and relaxation mechanisms

Early-stage tensile stress evolution in α-Al 2 O 3 scales during oxidation of FeCrAlY at 1000, 1050, 1100, and 1200 °C was monitored in situ by use of synchrotron radiation. Tensile stress development as a function of oxidation temperature indicated a dynamic interplay between stress generation and relaxation. An analysis of the time dependence of the data indicated that the observed relaxation of the initial tensile stress in the oxide scales at 1100 and 1200°C is dominated by creep in the α-Al 2 O 3 . A thin layer of a (Fe,Cr,Al) oxide was observed at the oxide-gas interface, consistent with a mechanism whereby the conversion of (Fe,Cr,Al) 2 O 3 to α-Al 2 O 3 produces an initial tensile stress in the alumina scale.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Enhanced tunability of two-dimensional electron gas on SrTiO 3 through heterostructuring

Two-dimensional electron gases (2DEGs) on the SrTiO 3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. In this paper, we report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO 3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O 2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Compatibility of Zircaloy-4 in eutectic PbSn and PbBiSn liquid metals

Here, a novel nuclear fuel concept has been proposed, consisting of UO₂ particles suspended in a liquid metal alloy. To evaluate its feasibility, the compatibility of Zircaloy-4 cladding with candidate eutectic PbSn and PbBiSn alloys—as well as with pure Pb, Bi, and Sn—was investigated through 1000-hour exposures at 400 °C and 600 °C. Severe degradation of the Zircaloy-4 specimens was observed in eutectic PbSn at 600 °C, whereas oxidation and oxygen diffusion were evident after exposure at 400 °C. At 600 °C, the formation of Zr₃Fe precipitates at the oxide–alloy interface was identified in specimens exposed to Pb and PbBiSn. Thermodynamic analysis suggested that the observed intermetallic formation resulted from the destabilization of Laves phases due to oxygen ingress at elevated temperatures.

Bismuth↗
DOE OSTI2020

Wear Performance of incoloy 800HT and inconel 617 in various surface conditions for high-temperature gas-cooled reactor components

Incoloy™ 800HT and Inconel™ 617 are primary candidate structural materials for high-temperature gas-cooled reactors (HTGRs). Impurities (e.g., H 2 O, CH 4 ) in the coolant induce corrosion reactions that affect tribological behavior. We investigate the high-temperature tribological performance of the alloys under surface conditions including: conditioned in H 2 O-containing helium at elevated temperatures, hardened via the carbon-diffusion Kolsterising® treatment, and conditioned after hardening. Initial friction coefficients and volume removed serve as metrics for wear performance. In this work, we find that wear mechanisms including scuffing, glaze-oxide formation, and oxide-layer wear and break-through are governed by surface hardness, chemistry, and applied load. The formation of a glaze-oxide layer is achieved with an oxide of sufficient mechanical integrity if the oxide-substrate interface is strong and the load is low.

42 ENGINEERING↗
DOE OSTI2024

Composition-Dependent Reconstructions of Titanium Oxide Clusters and Cu(111) Support via Cluster-Adatom Interactions

Mass-selected cluster deposition and scanning tunneling microscopy (STM) were used to investigate the surface structure and thermal stability of Ti 3 O y (y = 5, 6) clusters on a Cu(111) surface. STM imaging shows that the substoichiometric Ti 3 O 5 clusters aggregate into large dendritic assemblies at step edges, while the stoichiometric Ti 3 O 6 clusters are highly dispersed as single or small groupings of clusters. Cluster deposition also results in extensive reconstruction of the Cu(111) surface. The Ti 3 O 5 /Cu(111) surface exhibits one Cu-layer deep pits that are ringed by cluster assemblies that nucleate and grow at the perimeter step edges. By comparison, the Ti 3 O 6 /Cu(111) surface consists of irregular step edges and small one Cu-layer islands that are decorated with clusters. The restructuring of the Cu(111) surface is attributed to strong Cu-cluster interactions that release Cu adatoms from the step edges. This mechanism is supported by density functional theory (DFT) calculations, which predict that the Cu adatom attachment to the clusters is energetically favorable. Annealing the surfaces at elevated temperatures (400-700 K) results in higher densities of irregular steps, pits and isolated Cu islands as well as increased cluster aggregation. In conclusion, this work highlights adatom-cluster interactions as another manifestation of strong cluster-support interactions that can significantly alter the nature of the oxide-metal interface.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

A Quantum Mechanical Study of Quartz (101) Interfacial Boundaries

Density functional theory (DFT) calculations were performed on periodic and molecular models to explore the energetics of bonding modes at quartz–quartz interfaces, common grain contacts in sandstones. Four interface types were modeled: H 2 O-mediated, silanol H-bond mediated, O–O peroxide bonds, and siloxane bonds. Each type of interface may exist in the subsurface of the Earth, depending upon water activity, temperature, and pressure, as interfacial structures are stable within DFT molecular dynamics simulations up to 473 K. The results predict interfacial energies SiOSi > SiOOSi > SiOH-6H 2 O > 2SiOH, as expected based on similar bond strengths in other systems. The proposed SiOOSi interface is not generally accounted for in chemomechanical models but could be important in sandstones at depth in the Earth. The implications for intergrain fracturing and H2 generation are discussed.

Hydrogen↗