Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “nitridation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Silicon nitride passivation of IC's

Feasibility study looks at effectiveness of silicon nitride passivation coating against moisture and mobile ions. Coating was tested on CMOS microcircuits. Tests included temperature cycling, high-temperature electrical stress, and temperature and humidity exposure. Report concludes plastic-encapsulated circuits with protective coating exhibit high survival rates; it includes tables summarizing test results and figures that show effects of flexing.

Erickson, J. J.↗
NASA NTRS1980

Reaction bonded silicon nitride prepared from wet attrition-milled silicon

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 volume percent hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high strength specimens and both subsurface and surface flaws in low strength specimens.

Herball, T. P.↗
NASA NTRS1980

Reaction bonded silicon nitride prepared from wet attrition-milled silicon

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 vol% hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high-strength specimens and both subsurface and surface flaws in low-strength specimens.

Herbell, T. P.↗
NASA NTRS1980

Performance of Chevron-notch short bar specimen in determining the fracture toughness of silicon nitride and aluminum oxide

Ease of preparation and testing are advantages unique to the chevron-notch specimen used for the determination of the plane strain fracture toughness of extremely brittle materials. During testing, a crack develops at the notch tip and extends stably as the load is increased. For a given specimen and notch configuration, maximum load always occurs at the same relative crack length independent of the material. Fracture toughness is determined from the maximum load with no need for crack length measurement. Chevron notch acuity is relatively unimportant since a crack is produced during specimen loading. In this paper, the authors use their previously determined stress intensity factor relationship for the chevron-notch short bar specimen to examine the performance of that specimen in determining the plane strain fracture toughness of silicon nitride and aluminum oxide.

Munz, D.↗
NASA NTRS1982

Study of phenomena related to the sintering process of silicon nitride at atmospheric pressure

A procedure was perfected for the production of components used in engineering applications of silicon nitride. Particles of complex geometry that combine remarkable mechanical properties with a high density are obtained. The process developed, in contrast to the "hot pressing" method, does not use external pressures, and in contrast to the reaction bonding method, final densities close to the theoretical value are obtained.

Bertani, A.↗
NASA NTRS1982

Sputtered silicon nitride coatings for wear protection

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Grill, A.↗
NASA NTRS1984

Silicon Nitride Antireflection Coatings for Photovoltaic Cells

Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

Johnson, C.↗
NASA NTRS1982

Ellipsometric study of silicon nitride on gallium arsenide

A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

Alterovitz, S. A.↗
NASA NTRS1983

Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

Johnson, C. C.↗
NASA NTRS1983

Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

Huebner, K. H.↗
NASA NTRS1984

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Matsusue, K.↗
NASA NTRS1984

Crystallization of the glassy phase of grain boundaries in silicon nitride

Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

Jefferson, D. A.↗
NASA NTRS1984

X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2

X-ray photoelectron spectroscopy has been used to study the composition of 100-A thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiO(x)N(y)/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 A from the film/substrate interface. The interface region itself is found to be oxygen-rich relative to the rest of the film. Possible models which can explain these results are discussed.

Vasquez, R. P.↗
NASA NTRS1984

Thermogravimetric analysis of silicon carbide-silicon nitride fibers at ambient to 1000 C in air

Thermogravimetric analysis of silicon carbide-silicon nitride fibers was carried out at ambient to 1000 C in air. The weight loss over this temperature range was negligible. In addition, the oxidative stability at high temperature for a short period of time was determined. Fibers heated at 1000 C in air for fifteen minutes showed negligible weight loss (i.e., less than 1 percent).

Daniels, J. G.↗
NASA NTRS1984

An improved process for preparing Tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibers

A technique is described for the preparation of tris(N-methylamino)methylsilane by a process which may be used for large-scale production. The steps include synthesis, filtration to remove the salt byproduct, and distillation to remove the product from the reaction mixture under anhydrous conditions. Tris(N-methylamino)methylsilane is a precursor used to prepare silicon carbide-silicon nitride fibers that have been shown to have high tensile modulus (29 x 10 to the 6th psi for 0.4 mil diameter), high tensile strength (10.5 x 10 to the 4th psi), and high electrical resistivity (7 x 10 to the 8th ohm-cm).

Penn, B. G.↗
NASA NTRS1984

Sintered silicon nitride workpiece

A description is given of a sintering method for silicon nitride. A detailed explanation of the invention is presented. Four procedures for the sintering process are described.

Shinohara, N.↗
NASA NTRS1985

Slip casting and nitridation of silicon powder

Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

Seiko, Y.↗