Service Level Agreements for 5G and Beyond: Overview, Challenges and Enablers of 5G-Healthcare Systems
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SEARCH · Engineering Papers
Results for “device engineering”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Alignment Method for Synchronized Phase Angle Measurement With Presence of Practical Time Shift
Synchronized Phase Angle Measurements (SPAMs) are widely used in power systems in the applications of situational awareness. However, the practical time shifts can lead to unexpected angle differences among Phasor Measurement Units (PMUs) manufactured from various vendors. Moreover, since most of PMUs calculate phase angle via Discrete Fourier Transform based approaches, this issue becomes even worse under the off-nominal frequency condition. To mitigate the impact of practical timing shift, this letter presents a fast method to rectify the SPAM for appropriate alignment. To verify the performance of the proposed method, laboratory and field tests have been conducted by implementing the method in PMUs and phasor data concentrators, respectively. The results demonstrate that the standard deviations of the phase angle differences have significantly decreased to 0.1$^{\circ }$ order with the adoption of the proposed method.
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X-Ray Toolkit Mobile (Android)
X-Ray Toolkit Mobile (Android) is a software application for acquiring and processing digital images. The application runs on mobile devices running Android operating systems. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525 SAND2021-1981 O
Harris, JamesZ.↗
HITMAN
HITMAN (Hermite Interpolation of Trajectories and Measurement Synthesis for Analysis of Navigators) interpolates—or estimates the unknown values between known values—flight trajectories and generates synthetic inertial measurement unit (IMU) data using Hermite splines. This Python library provides modeling and simulation capabilities to synthesize inertial measurements from discrete trajectory points, enabling researchers to create exemplar datasets for evaluating navigation algorithms in various applications, including consumer devices like smartphones and vehicles. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
Walker II, Michael [Sandia National Lab. (SNL-CA),↗
Batteries Annual Progress Report (FY2019)
The Vehicle Technologies Office (VTO) of the Department of Energy (DOE) conducts research and development (R&D) on advanced transportation technologies that would reduce the nation’s use of imported oil and would also lead to reductions in harmful emissions. Technologies supported by VTO include electric drive components such as advanced energy storage devices (primarily batteries), power electronics and electric drive motors, advanced structural materials, energy efficient mobility systems, advanced combustion engines, and fuels. VTO is focused on funding early-stage high-reward/high-risk research to improve critical components needed for more fuel efficient (and cleaner-operating) vehicles. One of the major VTO objectives is to enable U.S. innovators to rapidly develop the next generation of technologies that achieve the cost, range, and charging infrastructure necessary for the widespread adoption of plug-in electric vehicles (PEVs). An important prerequisite for the electrification of the nation’s light duty transportation sector is development of more cost-effective, longer lasting, and more abuse-tolerant PEV batteries. One of the ultimate goals of this research, consistent with the current vehicle electrification trend, is an EV which can provide the full driving performance, convenience, and price of an internal combustion engine (ICE) vehicle. To achieve this, VTO has established the following overarching goal (Source: FY2021 Congressional Budget Justification1): …identify new battery chemistry and cell technologies with the potential to reduce the cost of electric vehicle battery packs by more than half, to less than $100/kWh (ultimate goal is $60/kWh battery cell cost), increase range to 300 miles, and decrease charge time to 15 minutes or less by 2028. VTO works with key U.S. automakers through the United States Council for Automotive Research (USCAR) – an umbrella organization for collaborative research consisting of Fiat Chrysler Automobiles (FCA), the Ford Motor Company, and General Motors. Collaboration with automakers through the partnership known as U.S. Driving Research and Innovation for Vehicle Efficiency and Energy Sustainability (U.S. DRIVE) attempts to enhance the relevance and the success potential of its research portfolio. VTO competitively selects projects for funding through funding opportunity announcements (FOAs). Directly-funded work at the national laboratories are awarded competitively through a lab-call process. During the past year, VTO continued R&D in support of PEVs. Stakeholders for VTO R&D include universities, national laboratories, other government agencies and industry (including automakers, battery manufacturers, material suppliers, component developers, private research firms, and small businesses). This document summarizes the progress of VTO battery R&D projects supported during the fiscal year 2019 (FY 2019).
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Rapid Patterning and Advanced Device Structures for Low Cost Manufacturable Crystalline Si IBC Cells
Recent record efficiency Si cells have had an interdigitated back contact (IBC) design where both positive and negative contacts are fabricated on the back side of the Si wafer. Many industry groups have investigated IBC cells but used photolithography to pattern the rear contacts although it is considered impractical for low cost, high volume manufacturing. Alternative patterning methods using lasers and mechanical masking have been utilized in fabrication of patterned regions in IBC Si solar cells to replace photolithography. Another exciting advance in Si solar cell technology has been replacing the high temperature diffusion of doped regions inside the crystalline Si wafer with low temperature deposition of very thin layers of doped amorphous hydrogenated Si (a-Si:H) on the Si wafer. This is called a Si heterojunction (HJ) device. The a-Si:H provides excellent passivation of surface defects and has produced the highest open circuit voltages (VOC) of any Si solar cell device structure. The Institute of Energy Conversion (IEC) demonstrated the first IBC-HJ solar cell combining these two strategies in 2007 and has fabricated IBC-HJ cells with 20% efficiency using three photolithography steps. Despite the demonstrated efficiency potential of this device by industry groups (>26%) there is no commercial production because of the challenges of patterning and processing the structure in an industrial environment. Our work sought to address that challenge. The objective of this 3 year project was to develop the processing for the IBC-HJ Si solar cell using lasers for patterning and contact formation instead of photolithography. Laser patterning enables rapid, contactless manufacturing of patterned regions. We intensively studied laser fired contacts, laser patterning of the a-Si multi-layer stacks and metal layers and the use of plasma shadow masks. After an exhaustive focus in the first year on the laser fired emitter (LFE) and contact (LFC), we were unable to achieve VOC greater than 660 mV, compared to the 720 mV required to meet our milestones. We discovered that an additional issue with our original IBC structure was the presence of an inversion layer at the back surface connecting the p and n regions which reduced the VOC and fill factor (FF). We developed innovative methods for characterizing the inversion layer. These two limitations in the original design lead to development of a new IBC-HJ process sequence and device structure which we called Plasma Masked Laser Processed (PMLP). It retained the original high efficiency features including manufacturability. The LFC was replaced with a standard n-type a-Si HJ contact. The inversion layer was eliminated by replacing the previous p-type stack in the gap with an n-type or SiN stack. The PMLP used laser ablation of a multi-layer a-Si stack followed by chemical etching to open the n-contact. It required deposition of a patterned stack through a mask in the plasma deposition chamber. This turned out to be a source of significant problems due to inevitable unwanted deposition ‘leakage’ under the mask. This formed a blocking contact on the emitter which significantly reduced Voc and FF. Several iterations in PMLP device structure and chemical etching steps resulted in a large improvements, e.g. the efficiency increasing from 3 to 15% and Voc from 450 to 660 mV but they were unable to completely eliminate it. The best IBC-HJ device we fabricated had only 15% efficiency. For perspective, our standard FHJ devices had 20% efficiency.
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2021 Annual Progress Report: Vertical GaN Device Development
This project is part of a multi-lab consortium that leverages U.S. research expertise and facilities at national labs and universities to significantly advance electric drive power density and reliability, while simultaneously reducing cost. The final objective of the consortium is to develop a 100 kW traction drive system that achieves 33 kW/L, has an operational life of 300,000 miles, and a cost of less than 6 dollars/kW. One element of the system is a 100 kW inverter with a power density of 100 kW/L and a cost of 2.7 dollars/kW. New materials such as wide-bandgap semiconductors, soft magnetic materials, and ceramic dielectrics, integrated using multi-objective co-optimization design techniques, will be utilized to achieve these program goals. This project focuses on a subset of the power electronics work within the consortium, specifically the design, fabrication, and evaluation of vertical GaN power devices suitable for automotive applications.
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Magnetic Gears: The Key to Robust, Cost-Effective Hydropower Drivetrains
Based on previous demonstrated success at fabricating 5 and 10 kW scale magnetic gearbox (MGB) prototypes, Emrgy and its partners (the project team) proposed to design and construct a 100 kW scale MGB with a 30:1 gear ratio for the low-head hydro applications. The Statement of Project Objectives included tasks covering: 1) Market Applicability; 2) Technical Metrics; 3) Design (initial); 4) Electromagnetic (EM) Load and Structural Analysis; 5) Modal Analysis; 6) Sealing Design and 7) Final Design during Budget Period 1. Budget Period 2 included tasks covering: 1) Materials Procurement and Test Plan Development; 2) Assembly; and 3) Testing. The Market Applicability study (Task 1) led to a clear conclusion and recommendation toward “Low Head” technologies for maximum market share of both New Stream Reach development as well as powering Non-Powered Dams. The findings of this study also identified the opportunity for a larger scale magnetic gearbox-based drive train as a function of increased torque, as opposed to increased speed. The Technical Metrics Study (Task 2) concluded a horizontal orientation was preferred, examined potential loss mechanisms, concluded that a Halbach Array magnetic design was preferred, established a 30:1 gear ratio as optimal, and established a power rating of 100 kW as optimal. The subsequent initial and final detailed design process included electro-magnetic (EM) load and structural analysis (Task 4), a Modal analysis (for vibration) (Task 5), and a sealing design (Task 6) to assure water impermeability. The final design package (Task 7) included 729 individual parts, 117 unique part numbers, and 15 assemblies. In order to facilitate procurement, the full bill of materials was broken down into several sub-components: 1) custom magnetic parts; 2) custom machined parts; 3) custom casted parts; and 4) commercial off the shelf (COTS) parts. The casted parts were fabricated by Oak Ridge National Laboratory (ORNL) via a Cooperative Research and Development Agreement (CRADA) with Emrgy and funded by the Advanced Manufacturing Office (AMO). The procurement effort (Task 8) ultimately covered three time periods based on challenges encountered in meeting the budgeted cost for the prototype. Following the first effort in the early stages of Budget Period 2 in 2017, a no-cost time extension was granted to seek alternative fabrication and procurement options. The project was re-booted in 2020 based on the new ORNL CRADA that would focus on five (5) of the more difficult and expensive parts using their advanced manufacturing expertise. Procurement efforts for the other custom machined parts resulted in quotations that still exceeded the budget by more than $\$$100k. This was, in part, also due to the concurrent COVID-19 pandemic that caused both supply chain disruptions and labor shortages. As the project continued, pricing and availability degraded further. In Q2 FY’22, it was decided to not proceed with the fabrication of the prototype (Task 9) based on budgetary limitations. Outcomes included a full and detailed design of a 100 kW magnetic gearbox and associated indented bill of materials (BOM) and CAD drawings, a full assembly instruction manual with an associated BOM for materials necessary to support assembly, the fabrication of the double Halbach magnetic array for the rotor/stator system, fabrication of five (5) sand-casted/machined parts (via CRADA with ORNL) and an initial draft of a comprehensive testing plan. The most significant non-outcome was the actual fabrication and testing of the prototype gearbox based on budget limitations. Lessons learned included the need for an Application / Design / Cost trade analysis to better elucidate the cost potential of the MGB in the projected volumes anticipated for future demand. This would better establish the efficacy of the original cost target ($\$$0.80/Watt) and/or the need for reconsideration of designs and applications. Likewise, additional consideration of the prototype nature of the gearbox – single use, short lifetime, etc. - either as a separate exercise or in place of the design process completed, to reduce the cost of the demonstration prototype device. Additionally, project continuity was cited as a significant risk based on the loss of the primary design engineering firm after Budget Period 1. A design analysis exercise was conducted at the conclusion of the project to identify potential areas for cost reduction. One concept considered was the removal of the inner ring of magnets (with associated changes in the outer ring magnets) to enable a horizontal collapse of the design. It was estimated this could reduce cost by 10-25% without impacting performance.
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Optimization of La 2–x Sr x CuO 4 Single Crystal Film Growth via Molecular Beam Epitaxy
Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) combined with ozone is one of the best methods to fabricate single-crystal thin films of complex oxides. Cuprate such as La 2-x Sr x CuO 4 (LSCO) is a representative complex-oxide high-temperature superconductor (HTS) material. Our group utilizes this method to produce high-quality single-crystal HTS films with atomically smooth surfaces and interfaces. In addition, ALL-MBE enables us to engineer multilayer heterostructures with atomic precision. This allows the fabrication of tunnel junctions, various nanostructures, and other HTS devices of interest for superconducting electronics. We have synthesized over three thousand LSCO thin films in the past two decades. These films’ structural and electronic properties have been studied and characterized by various methods. Here, we distill the extensive experience we accumulated into a step-by-step protocol to fabricate atomically perfect LSCO films. The recipe includes substrate preparation, ozone generation and distillation, source calibration, the in situ monitoring of the film synthesis, post-growth annealing, and ex situ characterization. It discloses a reproducible way to fabricate single-crystal LSCO films for basic research and HTS electronic applications.
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A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers
This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.
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Soft buckling actuators
A soft actuator is described, including: a rotation center having a center of mass; a plurality of bucklable, elastic structural components each comprising a wall defining an axis along its longest dimension, the wall connected to the rotation center in a way that the axis is offset from the center of mass in a predetermined direction; and a plurality of cells each disposed between two adjacent bucklable, elastic structural components and configured for connection with a fluid inflation or deflation source; wherein upon the deflation of the cell, the bucklable, elastic structural components are configured to buckle in the predetermined direction. A soft actuating device including a plurality of the soft actuators and methods of actuation using the soft actuator or soft actuating device disclosed herein are also described.
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Reliable Power for Remote Applications
Optical power beaming has the potential to fundamentally change how remote devices receive power, leading to technological innovation across many sectors. NREL is interested in teaming with partners to engineer field-ready (and space-ready) solutions for long-range power beaming and adapt new ideas to important applications.
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Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells
Proof-of-concept for polysilicon on locally etched oxide (PLEO) contacts. Room temperature approach (via MACE) to engineer pinholes decouples charge-carrier transport across contact from passivation scheme of choice. 19 and 17% PLEO devices fabricated on double-side textured and saw-damage etched n Cz wafers, respectively. Preliminary work on polysilicon on locally etched nitride/oxide (PLENO) contacts. 0.2 fA/cm2 achieved with p PLENO; contact displays Ohmic behavior but still very resistive due to low pinhole density.
c-Si↗
Electrocaloric cooling with electrostatic actuation
A solid-state heat transporting device including a heat transporting element whose uniformity of contact with one or multiple surfaces is controllable so that various amounts of heat may be transported to and from the one or multiple surfaces. The heat transporting element uses the electrocaloric effect to absorb and release the heat and the uniformity of contact is controlled using an electrostatic effect which may change the shape of the heat transporting element. In one embodiment, the heat transporting element is an electrostatically actuated P(VDF-TrFE-CFE) polymer stack achieving a high specific cooling power of 2.8 W/g and a COP of 13 (the highest reported coefficient of performance to date) when used as a cooling device.
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Soft error-mitigating semiconductor design system and associated methods
A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.
Miryala, Sandeep↗
Insert device for fuel injection
An insert device includes a body having an upper body portion configured to couple with a cylinder head of an engine cylinder and a lower body portion extending from the upper body portion toward a combustion chamber of the engine cylinder. The body includes an interior surface extending around a central volume positioned to receive liquid fuel from a fuel injector. The body includes gas inlet channels and fuel-and-gas mixture outlet channels. The gas inlet channels direct gas into the central volume where the gas mixes with the liquid fuel to form the fuel-and-gas mixture. The fuel-and-gas mixture outlet channels direct the mixture into the combustion chamber. The interior surface includes concave surface portions between the inlet channels and the outlet channels along a center axis of the body that are shaped to direct the gas into the central volume toward the liquid fuel in the central volume.
Heher, Brett↗
Soft error-mitigating semiconductor design system and associated methods
A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.
Miryala, Sandeep↗
Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.
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