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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Defect phase diagram for doping of Ga 2 O 3

For the case of n-type doping of β-Ga 2 O 3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO 2 ), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO 2 ) conditions. Considering further the stability constraints due to sublimation of molecular Ga 2 O, specific predictions of optimized pO 2 and Si dopant concentrations are given. To conclude, the incomplete passivation of dopant-defect complexes in β-Ga 2 O 3 suggests a design rule for metastable doping above the solubility limit.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Deep level defects and cation sublattice disorder in ZnGeN 2

The III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include the heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of the limitations of the binary nitrides as well as new applications. However, the more complex cation sublattice also gives rise to new complexities with both native and extrinsic defects, such as disorder on the cation sublattice. Here, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy measurements of defect energy levels in ZnGeN 2 combined with transmission microscopy and crystal lattice diffraction reveal optical signatures of mid-gap states that can be associated with cation sublattice disorder. The energies of these characteristic optical signatures in ZnGeN 2 thin films grown by metal-organic chemical vapor deposition are in good agreement with energy levels predicted by density functional theory for specific thermodynamically stable native point defects. To test the dependence of these defect signatures on crystal atomic composition, we correlated spatially-resolved optical and atomic composition measurements using spatially resolved x-ray photoelectron spectroscopy with systematically varied growth conditions on the same ZnGeN 2 films. The resultant elemental maps versus defect spectral energies and intensities suggest that cation antisite complexes (Zn Ge -Ge Zn ) versus isolated native point defects form preferentially and introduce mid-gap states that dominate electron-hole pair recombination. Complexing of Zn Ge and Ge Zn antisites manifests as disorder in the cation sub-lattice and leads to the formation of wurtzitic ZnGeN 2 as indicated by transmission electron microscopy diffraction patterns and x-ray diffraction (XRD) reciprocal space maps. Furthermore, these findings emphasize the importance of growth conditions to control cation place exchange.

42 ENGINEERING↗
DOE OSTI2020

Defects in Semiconductors

All semiconductors, whether by design or by accident, contain defects. The fundamental properties of defects, such as impurities, native defects, and extended defects, affect a broad range of applications. These technologically important defects may be introduced during growth and processing. Electrical, optical, and magnetic phenomena related to defects have been observed experimentally and studied theoretically in a variety of materials. In addition to traditional semiconductors (elemental, III–V, and II–VI), emerging materials include organic semiconductors, nitrides, oxides, and topological insulators, in bulk crystal and thin-film forms as well as low-dimensional and nanoscale structures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Analysis of defects in In 2 O 3 :H synthesized in presence of water vapor and hydrogen gas mixture

Using hybrid functional-based density functional theory calculations, we analyze the structure and kinetics of defects formed in two competing synthesis routes to prepare hydrogen-doped In 2 O 3 films, using a hydrogen and oxygen gas mixture vs synthesis in the presence of water vapor. For both of these synthesis routes, we find that H + is the dominant defect species: when the Fermi level is close to the conduction band, H + has a lower formation energy than other intrinsic or extrinsic defects. Our results also suggest that water molecules spontaneously split into H + (which occupies octahedral voids) and OH – interstitials (which occupies vacant oxygen lattice sites or oxygen vacancies). From the analysis of the binding energies between these different defects, we conclude that these defects do not cluster and are most likely to stay spatially distributed throughout the films. In addition, the sum of formation energies of an oxygen (i.e., O$^{2–}_i$) and a H + interstitial is close to the formation energy of a OH – interstitial, meaning that water molecules are completely split into 2H + and O$^{2–}_i$ at the synthesis conditions. Further, in the presence of H 2 + O 2 gas mixture, oxygen interstitials occupy oxygen vacancies while hydrogen interstitials occupy vacant oxygen lattice sites and form bonds with lattice oxygens. Our analysis of the defect equilibria suggests that the hydrogen content in films synthesized in the presence of water vapor is higher than films synthesized in the presence of a hydrogen gas mixture. At high dopant concentrations, a hydrogen bond network is formed in the system and this leads to large distortions in the lattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Neutron irradiation induced defects in oxides and their impact on the oxide properties

Understanding the irradiation-induced defects in oxides is of interest for a wide range of applications. ZnO is an interesting oxide with mixed ionic and covalent bonding that contains a variety of point defect structures—making it an excellent model for studying irradiation-induced defects and their impact on properties. Here, we investigate the effects of neutron irradiation on the formation of defects and on the structural, optical, and electrical properties of ZnO single crystals. We observe the formation of vacancies and voids via positron annihilation spectroscopy. Neutron irradiation led to a significant deterioration of the ZnO structure and formed a high concentration of point defects, vacancy clusters, and voids with large disparities in their structure across variable irradiation times. It also led to significant changes in the optical properties and sample color. Irradiation for 444 h induced a high concentration of Cu acceptors as well as a high concentration of Ga donors. Additionally, temperature-dependent Hall effect measurements revealed the competing production of donors and acceptors and showed an increase in the slope of the carrier freeze-out curve with increasing irradiation dose. This work demonstrates the combined effects of neutron irradiation in producing a wide range of structural defects, impurities, and dopants in oxides and their enormous impact on modifying the oxide structure and both the optical and electronic properties. It particularly emphasizes the importance of considering the production of new impurities and dopants during the neutron irradiation of oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N 2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. In conclusion, this work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗
DOE OSTI2021

Defect passivation of perovskites in high efficiency solar cells

Abstract Metal halide perovskite solar cells (PSCs) have enormous potential as the next-generation photovoltaic technology. Being solution-processed at relatively low temperatures, it is inevitable that crystallographic defects are formed in abundance during fabrication. Such defects may cause undesirable energy losses by non-radiative recombination to limit the performance of PSCs. More importantly, it has become apparent that defect activity is fundamentally responsible for the operational instability issues hindering the commercialization readiness of PSCs. It is therefore necessary to develop strategies to minimize defect formation and to passivate formed defects. Here, we discuss recent advances on such defect mitigation and passivation strategies. We especially emphasize on methodologies that are incorporated into state-of-the-art PSCs that have demonstrated world record efficiencies and long-term stability.

14 SOLAR ENERGY↗
DOE OSTI2018

Defect-Induced Photoluminescence Enhancement and Corresponding Transport Degradation in Individual Suspended Carbon Nanotubes

The utilization of defects in carbon nanotubes to improve their photoluminescence efficiency has become a widespread study towards the realization of efficient light emitting devices. Here, we report a detailed comparison of defects in nanotubes (quantified by Raman spectroscopy) and photoluminescence (PL) intensity of individual suspended carbon nanotubes (CNTs). We have also the evaluated the impact of these defects on the electron/hole transport in the nanotubes, which is crucial for the ultimate realization of optoelectronic devices. We find that brightly luminescent nanotubes exhibit a pronounced D-band in their Raman spectra, and vice versa, dimly luminescent nanotubes exhibit almost no D-band. Here, defects are advantageous for light emission by trapping excitons, which extends their lifetimes. We quantify this behavior by plotting the PL intensity as a function of the I D /I G band Raman intensity ratio, which exhibits a Lorentz distribution peaked at I D /I G =0.17. For CNTs with a I D /I G ratio >0.25, the PL intensity decreases, indicating that, above some critical density, non-radiative recombination at defect sites dominates over the advantages of exciton trapping. In an attempt to fabricate optoelectronic devices based on these brightly luminescent CNTs, we transferred these suspended CNTs to platinum electrodes and found that the brightly photoluminescent nanotubes exhibit nearly infinite resistance due to these defects while those without bright photoluminescence exhibit finite resistance. These findings indicate a potential limitation in the use of brightly luminescent CNTs for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

GUTs, hybrid topological defects, and gravitational waves

The symmetry breaking of grand unified gauge groups in the early Universe often leaves behind relic topological defects such as cosmic strings, domain walls, or monopoles. For some symmetry breaking chains, hybrid defects can form where cosmic strings attach to domain walls or monopoles attach to strings. In general, such hybrid defects are unstable, with one defect "eating" the other via the conversion of its rest mass into the other's kinetic energy and, subsequently, decaying via gravitational waves. In this work, we determine the gravitational wave spectrum from 1) the destruction of a cosmic string network by the nucleation of monopoles which cut up and "eat" the strings, 2) the collapse and decay of a monopole-string network by strings that eat the monopoles, 3) the destruction of a domain wall network by the nucleation of string-bounded holes on the wall that expand and eat the wall, and 4) the collapse and decay of a string-bounded wall network by walls that eat the strings. We call the gravitational wave signals produced from the eating of one topological defect by another "gravitational wave gastronomy." We find that the four gravitational wave gastronomy signals considered yield unique spectra that can be used to narrow down the SO (10) symmetry breaking chain to the Standard Model and the scales of symmetry breaking associated with the consumed topological defects. Moreover, the systems we consider are unlikely to have a residual monopole or domain wall problem.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2018

Beyond thermodynamic defect models: A kinetic simulation of arsenic activation in CdTe

To overcome the limitations of thermodynamic defect models, we introduce a multilevel kinetic approach to simulate the activation of p doping in CdTe by group V elements using arsenic as a “model” dopant. On the lowest level, we calculate thermodynamic and kinetic parameters of point defects, complexes, and reactions from first principles. On the intermediate level, we use these parameters to calculate the kinetic rates of defect reactions. Finally, we simulate the time evolution of defects and free carriers. Our results show the importance of kinetic factors in defect chemistry models. We reveal the primary arsenic activation pathway to be a fast reaction in which the tellurium atoms get kicked out and replaced on the regular anion sites by interstitial arsenic species. We discover the important role of (As i As Te ) and (As i As i ) complexes that arise during activation anneal to form kinetically stabilized transient states that not only compensate the doping but also can produce deep recombination levels. Lastly, we expect that our modeling approach and the gained insight into the atomic processes behind the doping formation will advance the defect chemistry modeling of electronic properties of materials.

14 SOLAR ENERGY↗
DOE OSTI2024

Predicting Thermochemical Equilibria with Interacting Defects: Sr 1 − x Ce x Mn O 3 − δ Alloys for Water Splitting

Solar thermochemical hydrogen is one of the few potential routes towards direct fuel production from renewable energy sources, but the thermodynamic boundary conditions for efficient and economic energy conversion are challenging. Success or failure of a given oxide working material depends on the subtle balance between enthalpy and entropy contributions in the redox processes. Developing a mechanistic understanding of the behavior of materials on the basis of atomistic models and first-principles calculations is an important part of advancing the technology. One challenge is to quantitatively predict thermochemical equilibria at high concentrations when the redox-active defects start to interact with each other, thereby impeding the formation of additional defects. This problem is of more general importance to applications that rely on high levels of off-stoichiometry or doping, including, for example, batteries, thermoelectrics, and ceramic fuel cells. To account for such repulsive defect interactions, we introduce a statistical mechanics approach, defining an expression for the free energy of defect interaction based on limited sampling of defect configurations in density functional theory supercell calculations. The parameterization of this energy contribution as a function of defect concentration and temperature allows on-the-fly simulation of thermochemical equilibria. The approach consistently incorporates finite temperature effects by including the leading contributions to the temperature-dependent free energy for the case at hand, i.e., the ideal gas and configurational enthalpies and entropies. We demonstrate the capability and utility of the approach by simulating the water splitting redox processes for Sr 1 − x Ce x Mn O 3 − δ alloys. Published by the American Physical Society 2024

08 HYDROGEN↗
DOE OSTI2015

Effects of defect density on ultrathin graphene-based metal diffusion barriers

The authors investigated the effects of defect density on the performance of monolayer graphene as a barrier to metal diffusion. The defects were introduced to the graphene by controlled ultraviolet-ozone irradiation. The barrier performance of pristine graphene was found to be superior to that of defective graphene at temperatures up to 700 °C. Changes in surface morphology were more prevalent in the defective graphene-based films than in the pristine graphene-based film; the thermal stability of graphene films depends on their defect density. Defect density was found to be a determining factor in the barrier performance of graphene.

42 ENGINEERING↗
DOE OSTI2022

Feature Extraction for Pipeline Defects Inspection Based Upon Distributed Acoustic Fiber Optic Sensing Data

Fiber-optic distributed acoustic sensing (DAS) is becoming an increasingly important tool for real-time monitoring of energy and civil infrastructure structural health such as pipelines. We present a systematic theoretical study of the potential for DAS to be directly coupled with guided ultrasonic waves typically used in conventional acoustic non-destructive evaluation (NDE) methods for real-time pipeline health monitoring. We are referring to this innovative new NDE technique as ultrasonic guided wave and optical fiber sensor fusion. In the practical application of DAS coupled with guided ultrasonic waves, the structural design of (1) the specific guided waves excited, (2) the physical installation of the acoustic transducers and the fiber optic sensors, and (3) the functional performance specifications (gauge length, sensitivity, Etc.) of fiber optic DAS have an important influence on overall capabilities of the monitoring system. Meanwhile, physics-based analysis of acoustic waves is still a challenge due to the complex nature of the Lamb wave when it propagates, scatters, and disperses in the presence of structural defects. In this work, we simulate carbon steel pipes relevant for oil and gas pipeline applications with diameters of approximately 6-12” and wall thickness of 0.5” as the objects to be monitored. By establishing and implementing these capabilities, we seek to pursue an in-depth study on structural parameter optimization of DAS network, measurement range, and signal processing with an ultimate goal of increasing the sensitivity and efficacy of DAS to defect identification for various modes of corrosion expected in practice. To study the characteristics of scattered acoustic waves and performance of DAS for defect identification, we simulated the response of DAS for multiple pipe structures, defect types, and DAS sensor network configuration using finite element software Ansys, then the properties of signal response are extracted to construct defect-sensitive features. The raw data simulated, and the associated features extracted can ultimately be utilized as annotated training data to benchmark various designs for DAS applications, guided acoustic excitation sources, and learning model parameters to enhance early detection of potentially problematic defects.

Pipeline Defects Inspection, Fiber-optic sensors, ↗
DOE OSTI2018

Spatially Periodic Inhomogeneous States in a Nonlinear Crystal with a Nonlinear Defect

Spatially periodic inhomogeneous stationary states are shown to exist near a thin defect layer with nonlinear properties separating nonlinear Kerr-type crystals. The contacts of nonlinear self-focusing and defocusing crystals have been analyzed. The spatial field distribution obeys a time-independent nonlinear Schrödinger equation with a nonlinear (relative to the field) potential modeling the thin defect layer with nonlinear properties. Both symmetric and asymmetric states relative to the defect plane are shown to exist. It has been established that new states emerge in a self-focusing crystal, whose existence is attributable to the defect nonlinearity and which do not emerge in the case of a linear defect. The dispersion relations defining the energy of spatially periodic inhomogeneous stationary states have been derived. The expressions for the energies of such states have been derived in an explicit analytical form in special cases. The conditions for the existence of periodic states and their localization, depending on the defect and medium characteristics, have been determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Characterization and repair of core gap manufacturing defects for wind turbine blades

Various wind turbine blade components, such as shear webs and skins, commonly use fiber-reinforced composite sandwich structures with a core material like balsa or foam. During manufacturing, core gap defects may result from the misalignment of adjacent foam or balsa core sheets in the blade mold. It is important to understand the influence that core gaps have on the structural integrity of wind turbine blades and how to mitigate their influence. This research characterized the effects of core gap defects at the manufacturing and mechanical levels for both epoxy and next-generation thermoplastic composites. Common repair methods were assessed and compared. Multiple defect sizes were compared using temperature data gathered with thermocouples embedded during manufacturing to core gap defect characteristics obtained using image-mapping techniques, optical microscopy, and mechanical characterization by long beam flexure. Results showed that peak exothermic temperatures during curing were closely related to core gap size. The long beam flexure tests determined that transverse core gaps under pure bending loads can have a substantial effect on the ultimate facesheet strength of both epoxy and thermoplastic composite sandwich structures (up to 25% strength reduction), although the size of the defect itself had less of an influence on the magnitude of the strength reduction. The supporting image-mapping techniques indicated that the distortion of the composite facesheets by the core gaps contributed to the premature failures. The repair methods used in this study did very little to improve the ultimate strength of the sandwich panels that previously had core gap defects. The repair of the thermoplastic panel resulted in a further loss in ultimate facesheet strength. This research demonstrated that there is a vital need for the development of a compatible thermoplastic polymer repair resin system and appropriate resin specific repair procedures for the next generation of recyclable thermoplastic wind blades.

17 WIND ENERGY↗
DOE OSTI2014

Structural phase transitions and topological defects in ion Coulomb crystals

We use laser-cooled ion Coulomb crystals in the well-controlled environment of a harmonic radiofrequency ion trap to investigate phase transitions and defect formation. Topological defects in ion Coulomb crystals (kinks) have been recently proposed for studies of nonlinear physics with solitons and as carriers of quantum information. Defects form when a symmetry breaking phase transition is crossed non-adiabatically. For a second order phase transition, the Kibble-Zurek mechanism predicts that the formation of these defects follows a power law scaling in the rate of the transition. We demonstrate a scaling of defect density and describe kink dynamics and stability. We further discuss the implementation of mass defects and electric fields as first steps toward controlled kink preparation and manipulation.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Linking the Codependence of Grain Boundary Structure and Density to Defect Evolution Mechanisms during Radiation Damage

There is little understanding of the direct link between grain boundary character and density, and defect denuded zones. For example, the role of reduced grain size to the nanocrystalline regime and subsequent increase in grain boundary density is not fully understood in the context of dislocation or void behavior near grain boundaries. In addition, little is understood experimentally on how defect absorption changes the structure of the grain boundary during irradiation and may play a role in the migration of defects and solutes. This work aims to define a framework for understanding the origin of radiation damage mechanisms in model BCC and FCC nanocrystalline materials, on which a foundation of radiation tolerant material development can be built. The key questions that will be addressed by this work are: 1. What is the influence of GB density and GB character (GBC) on radiation damage accumulation near grain boundaries in model nanocrystalline FCC and BCC alloys; how are these two effects connected? 2. In the context of radiation induced segregation (RIS), what effect does species dependent interstitial diffusion have on the GB chemistry in light of these two dependencies? 3. How does grain boundary sink efficiency evolve with radiation over time? In situ and analytical transmission electron microscopy techniques are used to study both pure and alloy nanocrystalline materials under irradiation. TEM samples prepared from thin films will be irradiated in-situ, allowing for dynamic observation of the behavior of the alloy under ion irradiation. The key findings from this program were (1) the control of thin film texture via sputtering; (2) the development of characterization tools for defects and grain boundary quantification; (3) the development of new techniques for defect characterization toward high throughput analysis; (4) a mapped out parameter space for defect evolution as a function of grain size and grain boundary character; and finally (5) an indication of sink efficiency and its stability during irradiation.

36 MATERIALS SCIENCE↗