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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

High Performance Low Cost Power Conditioning Subsystems Using Smart Power/ Power Integrated Circuits in Photovoltaic Power Systems

New technologies like Smart Power, and Power Integrated Circuits are the wave of the future in providing high performance low cost power conditioning subsystem (PCS)in small to large power applications. This paper discusses circuit designs using these devices that are suitable for PCS in photovoltaic and other industrial applications such as electrical appliances, instrumentation, AC motor drives, battery chargers, automobiles, telecommunications, UPS, and switch mode power supplies. It examines the cost of high volume production and current technological barriers asociated with the development of these technologies.

smart↗
NASA NTRS1999

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost.

Bipolar↗
NASA NTRSDate not supplied

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
NASA NTRSDate not supplied

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
NASA NTRS2020

Latching Safety Critical Signals in Pyrotechnic Circuits

In recent designs of safety-critical pyro control circuitry, latching circuits, used to store the state of control signals, have been found to have sensitivity to noise that could lead to inadvertent firing. This technical bulletin describes the sensitive circuit, and provides best practice recommendations to improve the design.

Latching Safety↗
NASA NTRS2023

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
DOE OSTI2024

Laser Based Ultrasound for Verification of Circuit Card Assemblies

This IR is a follow-up conference Paper to the IR approved abstract; PNNL-SA-194096. --- Verification that equipment is authentic and not changed; even at the circuit card assembly (CCA) level will likely be an important component of future arms control treaties. This effort was an initial evaluation of the potential for laser-based ultrasound (LBU) as an inspection tool for Unique Identification (UID) of Circuit Card Assembly (CCA) boards and CCA components. The LBU system used a laser pulse for ultrasound generation and an Optical Microphone for ultrasound detection to image subsurface structures without physical contact and in a dry state. This paper described the selected CCA surrogate, CCA components that were examined, the LBU system, LBU images of the CCA components, and the initial development of UID algorithms. Receiver operating characteristics (ROC) curves indicated good performance for two algorithms as a potential means for UID of CCA boards and CCA components.

Laser Ultrasound, Equipment Verification, Arms Con↗
DOE OSTI2024

Equivalent-Circuit Models for Grid-Forming Inverters under Unbalanced Steady-State Operating Conditions: Preprint

Positive- and negative-sequence equivalent-circuit models are put forth to capture the operation of grid-forming (GFM) inverters in unbalanced steady-state operating conditions acknowledging the impact of current limiting. The particular control architecture examined adopts droop control (for primary control), nested inner-current and outer-voltage control (in the stationary reference frame), and it is adaptable to two different types of current limiting (current-reference saturation and virtual-impedance limiting). We anticipate the proposed models to be of interest in modeling, analysis, and simulation of GFM inverters in unbalanced settings that may arise, e.g., in the face of faults. Validation of the equivalent-circuit models is pursued via comparison with full-order electromagnetic-transient (EMT) simulations for representative balanced and unbalanced faults.

equivalent-circuit models↗
DOE OSTI2025

Novel Electrochemical Technique: Serial Open Circuit Potentiometry to Examine the Separability of Lanthanides in Molten Salts

The accumulation of lanthanide fission products in molten salts reduces the efficiency of pyroprocessing used nuclear fuel. Lanthanide fission products are notoriously difficult to separate due to their similar physical and electrical properties. We developed a novel electrochemical technique called serial open circuit potentiometry (SOCP) which allows us to delineate between metal deposition reactions with similar reduction potentials to great precision. SOCP has several advantages over traditional open circuit potentiometry including its ability to create 3D plots that describe all metal deposition reactions in a system. This information can be used to precisely determine equilibrium potentials of metal deposition reactions and quantify their error, determine nucleation potentials, and determine the nucleation and growth mechanism. In this work, we demonstrated the effectiveness of SOCP by studying molten salt mixtures containing CeCl3, GdCl3, and both CeCl3 and GdCl3 in LiCl-KCl eutectic.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Repairable and Reconfigurable Structured Liquid Circuits

The advance of printed electronics is significantly bolstered by the development of liquid-state electronics that overcome the inherent limitations in flexibility and reconfigurability of solid-state electronics. By integrating the biocompatibility and conductivity of sulfonated polyaniline (S-PANI) and phytic acid (PA) with the reconfigurability of structured liquids, highly conductive all-liquid threads are developed. The dense packing and overlap of PA/S-PANI complexes at an oil/water interface promotes in-plane electron transport, and standard four-point probe measurements of PA/S-PANI interfacial assemblies demonstrate enhanced electrical properties. Notably, the rapid jetting of the ink phase into the matrix phase allows for liquid threads to be printed, enabling the fabrication of large-scale, conductive pathways between two electrodes and liquid circuits. Upon mechanical cleavage of the liquid wires, circuits can be broken, but will easily self-repair using an electric field, making this motif useful in the design of switches as well as restoring conductive pathways in series or in parallel. In conclusion, the demonstrated flexibility and reconfigurability these PA/S-PANI wires possess hold significant promise for their practical use in the design of flexible and adaptive bioelectronics that can be repaired on demand, signifying a transformative step in the evolution of liquid electronic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

ECRAM Materials, Devices, Circuits and Architectures: A Perspective

Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.

Talin, A. Alec↗
DOE OSTI2023

Accelerated Short Circuiting in Anode-Free Solid-State Batteries Driven by Local Lithium Depletion

“Anode-free” solid-state batteries (SSBs), which have no anode active material, can exhibit extremely high energy density (≈1500 Wh L -1 ). However, there is a lack of understanding of the lithium plating/stripping mechanisms at initially lithium-free solid-state electrolyte (SSE) interfaces because excess lithium metal is often used. Here, it is demonstrated that commercially relevant quantities of lithium (>5 mAh cm -2 ) can be reliably plated at moderate current densities (1 mA cm -2 ) using the sulfide SSE Li 6 PS 5 Cl. Investigations of lithium plating/stripping mechanisms, in conjunction with cryo-ocused ion beam (FIB) imaging, synchrotron tomography, and phase-field modeling, reveal that the cycling stability of these cells is fundamentally limited by the nonuniform presence of lithium during stripping. Local lithium depletion causes isolated lithium regions toward the end of stripping, decreasing electrochemically active area and resulting in high local current densities and void formation. This accelerates subsequent filament growth and short circuiting compared to lithium-excess cells. Despite this degradation mode, here it is shown that anode-free cells exhibit comparable Coulombic efficiency to lithium-excess cells, and improved resistance to short circuiting is achieved by avoiding local lithium depletion through retention of thicker lithium at the interface. These new insights provide a foundation for engineering future high-energy anode-free SSBs.

25 ENERGY STORAGE↗
DOE OSTI2022

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.

42 ENGINEERING↗
DOE OSTI2021

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (V OC,in ), measured by photoluminescence, and the external open-circuit voltage (V OC,ex ) i.e. an additional V OC deficit. Higher V OC,ex value aim require a comprehensive understanding of connection between V OC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between V OC ,in and V OC,ex . The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local V OC ,in near the absorber/buffer interface leading to a V OC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the V OC ,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices.

14 SOLAR ENERGY↗
DOE OSTI2023

Linear growth of circuit complexity from Brownian dynamics

How rapidly can a many-body quantum system generate randomness? Using path integral methods, we demonstrate that Brownian quantum systems have circuit complexity that grows linearly with time. In particular, we study Brownian clusters of N spins or fermions with time-dependent all-to-all interactions, and calculate the Frame Potential to characterize complexity growth in these models. In both cases the problem can be mapped to an effective statistical mechanics problem which we study using path integral methods. Within this framework it is straightforward to show that the kth Frame Potential comes within ϵ of the Haar value after a time of order t ~ kN + k log k + log ϵ –1 . Using a bound on the diamond norm, this implies that such circuits are capable of coming very close to a unitary k-design after a time of order t ~ kN. We also consider the same question for systems with a time-independent Hamiltonian and argue that a small amount of time-dependent randomness is sufficient to generate a k-design in linear time provided the underlying Hamiltonian is quantum chaotic. These models provide explicit examples of linear complexity growth that are analytically tractable and are directly applicable to practical applications calling for unitary k-designs.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Design and performance evaluation of a dual-circuit thermal energy storage module for air conditioners

We present experimental results and a validated numerical model of a dual-circuit phase-change thermal energy storage module for air conditioners. The module incorporates a phase-change material encapsulated in compressed expanded natural graphite foam. We used n-tetradecane as the PCM with a transition temperature (~4.5 °C) suitable for air-conditioning applications. Heat exchange to and from the module is accomplished through two fluid loops operating as a heat source and sink embedded inside multiple slabs of the composite material. This dual-circuit design enables easier integration with air-conditioning equipment and provides enhanced flexibility in system operation as compared to the state-of-the-art thermal storage systems. When integrated with an air-conditioner, this design will enable peak-load shaving and enhances operational efficiency. The thermal storage device was designed for a nominal storage capacity of ~ 3.5 kWh. We evaluated the heat transfer and energy storage performance of this device using standalone heat transfer experiments to estimate key thermal resistances and identify design improvements before integration with an air conditioner. The numerical model of the heat exchanger uses a combination of discretized and lumped parameter approaches to maintain a balance between accuracy and computational expense. Our analyses show that the geometric features and integration of fluid tubes are key contributors to the thermal contact resistance between the fluid and the thermal storage material, and consequently, to the overall performance of the thermal storage module. Our standalone experiments also identified important operating scenarios in which this thermal storage module can be used for air-conditioning in buildings.

25 ENERGY STORAGE↗
DOE OSTI2022

Parameterization of generic positive sequence models to represent behavior of inverter based resources in low short circuit scenarios

The connection of large inverter based resources (IBR) in transmission systems is often located geographically and electrically far away from load centers. This, coupled with the displacement of synchronous machine plants, results in a reduction of the network short circuit strength at the point of connection. Under these conditions, state-of-the-art positive sequence simulation platforms and models can have difficulties maintaining numerical stability and/or providing an accurate representation of IBR plant dynamic behavior. As a result, computationally heavy time domain electromagnetic transient (EMT) simulations may be required to evaluate these systems. In this paper, a recently developed improved generic positive sequence model is parameterized to provide a representation of IBR behavior in low short circuit networks. Further, comparisons against generic and detailed EMT models demonstrate the suitability of the improved positive sequence model to study practical stability issues experienced with presently in-service plants. Such a model can provide some of the accuracy of an EMT representation with a much lower computational burden. The performance of the positive sequence model is validated against the behavior shown by both open white box and closed black box EMT domain models from around the world.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Trapezoidal grid fingers to reduce shadowing loss and improve short circuit current

Traditional metallic contacts on solar cells can cover a substantial portion of the device area, resulting in shadowing of light that diminishes the amount of current collected. In this paper, we developed trapezoidal electron-beam evaporated Ti/Al front grid fingers on GaAs single-junction solar cells to decrease the optical shadowing and increase the photogenerated current. Here, we observe a high fill factor of 87% at 1-Sun light intensity and we observe no degradation on the open-circuit voltage. The short-circuit current density is found to increase by 0.4 mA/cm 2 when compared to previously demonstrated electroplated Ni/Au front grid fingers, resulting in an efficiency improvement of ~0.8% absolute.

14 SOLAR ENERGY↗