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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Viscoelastic-Mapping of Cellulose Nanofibrils Using Low-Total-Force Contact Resonance Force Microscopy (LTF-CRFM)

Low-total-force contact resonance force microscopy (LTF-CRFM), an atomic force microscopy method, is introduced as a non-destructive means to quantify the local viscoelastic loss tangent (tan..delta..) of supported cellulose nanofibrils (CNFs). The method limits static and dynamic forces during measurement to minimize substrate and geometry effects and to reduce the potential for stress-induced CNF damage. LTF-CRFM uses Brownian motion to achieve the thermally-limited lowest dynamic force, while approaching adhesive pull-off to achieve the low static force. LTF-CRFM measurements were shown to generate analyzable data without evidence of nonlinear artifacts and without damage to the CNF over static forces ranging from 11.6 to 84.6 nN. The measured tan..delta.. of CNFs was 0.015 +/- 0.0094, which is the first reported tan..delta.. measurement of an isolated CNF. Finally, LTF-CRFM successfully mapped tan..delta.. along the length of CNFs to determine that kink defects along the CNF do not impart a local viscoelastic property change at the spatial resolution of the measurement.

BIOMASS FUELS↗
DOE OSTI2012

Damage evolution of yttria-stabilized zirconia induced by He irradiation

The study presents an investigation of damage evolution of yttria-stabilized zirconia (YSZ) induced by irradiation of 100 keV He ions at room temperature as a function of fluence. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used in order to study the nature and evolution of structural damage at different levels. Our study shows that various kinds of defects are formed with the increasing fluence. Firstly, at low fluences, from 1 1016 to 4 1016 cm 2, of which maximum values of displacement per atom (dpa) range from 0.29 to 1.17, an elastic strain which is attributed to the accumulation of irradiation-induced discrete point defects, is presented. Secondly, in the intermediate fluences ranging from 8 1016 to 1 1017 cm 2 with corresponding dpa varying from 2.33 to 2.91, a large drop of elastic strain occurs accompanied by presence of an intensive damage region, which is comprised by large and interacted defect clusters. Thirdly, at the two high fluences of 2 1017 and 4 1017 cm 2, of which dpa are 5.83 and 11.65 respectively, a great amount of ribbon-like He bubbles with granular structure and cracks are presented at the depth of maximum concentration of deposited He atoms. The structural damage evolution and the mechanism of formation of He bubbles are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Oxygen-induced inhibition of silicon-on-insulator dewetting

We report that solid state dewetting of Si thin film on SiO{sub 2} can be reversibly inhibited by exposing the Si surface to a partial pressure of dioxygen (∼10{sup −7}Torr) at high temperature (∼1100K). Coupling in situ Low-Energy Electron Microscopy and ex situ atomic force microscopy we propose that the pinning of the contact line induced by the presence of small amounts of silicon oxide is the main physical process that inhibits the dewetting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Probing graphene defects and estimating graphene quality with optical microscopy

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Domain formation and polarization reversal under atomic force microscopy-tip voltages in ion-sliced LiNbO{sub 3} films on SiO{sub 2}/LiNbO{sub 3} substrates

We report on studies on writing of micro- and nanodomains and specified domain patterns by AFM-tip voltages U{sub DC} in thin (0.5 μm thick) ion-sliced LiNbO{sub 3} films embedded to SiO{sub 2}/LiNbO{sub 3} substrates. A peculiar feature is an overlapping of domains as the distance between them decreases. Piezoelectric hysteresis loops were measured in a wide range of U{sub DC} pulse durations. Domain dynamics and characteristics of hysteresis loops reveal marked distinctions from those observed so far in LiNbO{sub 3} films and bulk crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Nucleation and growth of oxide islands during the initial-stage oxidation of (100)Cu-Pt alloys

The initial-stage oxidation of (100) Cu-Pt alloys has been examined by in situ environmental transmission electron microscopy and ex situ atomic force microscopy (AFM). It is shown that the oxidation proceeds via the nucleation and growth of Cu{sub 2}O islands that show dependence on the alloy composition and oxidation temperature. The kinetic measurements on the oxide nucleation reveal that both the nucleation density and surface coverage of Cu{sub 2}O islands can be promoted by alloying more Pt in the Cu-Pt alloys. Increasing the oxidation temperature above 700 °C results in the growth of large Cu{sub 2}O islands that transits to a dendritic growth morphology. The ex situ AFM studies reveal that the nucleation of oxide islands can occur on surface terraces and the subsequent oxide growth depletes local terrace Cu atoms that results in the formation of surface pits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW₁₂O₄₀³⁻, as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1998

Ground Based Program for the Physical Analysis of Macromolecular Crystal Growth

During the past year we have focused on application of in situ Atomic Force Microscopy (AFM) for studies of the growth mechanisms and kinetics of crystallization for different macromolecular systems. Mechanisms of macrostep formation and their decay, which are important in understanding of defect formation, were studied on the surfaces of thaumatin, catalase, canavalin and lysozyme crystals. Experiments revealed that step bunching on crystalline surfaces occurred either due to two- or three-dimensional nucleation on the terraces of vicinal slopes or as a result of uneven step generation by complex dislocation sources. No step bunching arising from interaction of individual steps in the course of the experiment was observed. The molecular structure of the growth steps for thaumatin and lipase crystals were deduced. It was further shown that growth step advance occurs by incorporation of single protein molecules. In singular directions growth steps move by one-dimensional nucleation on step edges followed by lateral growth. One-dimensional nuclei have different sizes, less then a single unit cell, varying for different directions of step movement. There is no roughness due to thermal fluctuations, and each protein molecule which incorporated into the step remained. Growth kinetics for catalase crystals was investigated over wide supersaturation ranges. Strong directional kinetic anisotropy in the tangential step growth rates in different directions was seen. The influence of impurities on growth kinetics and cessation of macromolecular crystals was studied. Thus, for catalase, in addition to pronounced impurity effects on the kinetics of crystallization, we were also able to directly observe adsorption of some impurities. At low supersaturation we repeatedly observed filaments which formed from impurity molecules sedimenting on the surfaces. Similar filaments were observed on the surfaces of thaumatin, canavalin and STMV crystals as well, but the frequency was low compared with catalase crystallization. Cessation of growth of xylanase and lysozyme crystals was also observed and appeared to be a consequence of the formation of dense impurity adsorption layers. Attachment: "An in situ AFM investigation of catalase crystallization", "Atomic force microscopy studies of living cells: visualization of motility, division, aggregation, transformation, and apoptosis", AFM studies on mechanisms of nucleation and growth of macromolecular crystals", and "In situ atomic force microscopy studies of surface morphology, growth kinetics, defect structure and dissolution in macromolecular crystallization".

Malkin, Alexander J.↗
DOE OSTI2015

Redox-active on-surface polymerization of single-site divalent cations from pure metals by a ketone-functionalized phenanthroline

Metallic iron, chromium, or platinum mixing with a ketone-functionalized phenanthroline ligand on a single crystal gold surface demonstrates redox activity to a well-defined oxidation state and assembly into thermally stable, one dimensional, polymeric chains. The diverging ligand geometry incorporates redox-active sub-units and bi-dentate binding sites. The gold surface provides a stable adsorption environment and directs growth of the polymeric chains, but is inert with regard to the redox chemistry. These systems are characterized by scanning tunnelling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy under ultra-high vacuum conditions. The relative propensity of the metals to interact with the ketone group is examined, and it is found that Fe and Cr more readily complex the ligand than Pt. The formation and stabilization of well-defined transition metal single-sites at surfaces may open new routes to achieve higher selectivity in heterogeneous catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The Influence of Mechanical Treatment on the Surface Relief of a Fe{sub 77}Ni{sub 1}Si{sub 9}B{sub 13} Metal Glass

The micro- and nanoreliefs of the loaded surfaces of a Fe{sub 77}Ni{sub 1}Si{sub 9}B{sub 13} metal glass are probed via scanning tunneling and atomic force microscopies, scanning electron microscopy, and X-ray fluorescence. The fractal characteristics of surfaces are evaluated via the multifractal approach. As found, the variations in a singularity spectrum width, calculated from the tunneling and atomic force microscopies, may be useful for predicting the forthcoming fracture. An increase in the breaking strength of ribbons subjected to hydrostatic compression is due to decreasing microporosity of a near-surface layer, which corresponds to the surface smoothing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Controlling the crystallite size and influence of the film thickness on the optical and electrical characteristics of nanocrystalline Cu{sub 2}S films

Highlights: Black-Right-Pointing-Pointer Modification of the preparation technique in order to deposit nanostructure Cu{sub 2}S thin films. Black-Right-Pointing-Pointer Controlling the crystallite size of the prepared films. Black-Right-Pointing-Pointer Study the surface morphology, optical and electrical characteristics of Cu{sub 2}S films. -- Abstract: In this work, Cu{sub 2}S nanocrystalline films have been successfully prepared using dip-coating technique. The stoichiometry and the structural characteristics of the prepared films were characterized by energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD), respectively. The surface morphology of the deposited Cu{sub 2}S film was studied using both the scanning electron microscopy (SEM) and the atomic force microscopy (AFM). The SEM and AFM images indicate that the prepared Cu{sub 2}S films are characterized by a well-dispersed and highly dense with spherical like-shaped aggregates of size in the nano scale. The optical absorption measurements indicate that the Cu{sub 2}S nanoparticles have a direct band gap of 2.92 eV. The dispersion and absorption parameters such as the dispersion energy, oscillating energy, real and imaginary dielectric constants and dissipation factor were calculated within a wide wavelength range of the spectrum that indicates the suitability of the deposited films as solar absorber using this technique. The dark electrical resistivity ({rho}) measurements were carried out at different temperatures in the range 312-440 K. These results confirm the semiconducting characteristic of the prepared Cu{sub 2}S films. Moreover, two activation energies were obtained that indicate the presence of two dominating conduction mechanisms in these temperature ranges. The bulk electrical resistivity ({rho}{sub B}) and the mean free path (l{sub 0}) of charge carriers were estimated from the resistivity-thickness dependence. The heterojunction device of n-ZnCdS/p-Cu{sub 2}S behaves good rectifying property. The photovoltaic characteristic of the heterojunction device using the current-voltage characteristic under illumination of 100 mW/cm{sup 2} was also observed. Discussion of the obtained results and their comparison with the previous published data were also considered.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface

The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of the type of CH{sub 3}–phenylene–thiophene–thiophene–phenylene–CH{sub 3} (CH{sub 3}–PTTP–CH{sub 3}) on an oxidized silicon surface have been studied. The electronic characteristics have been measured in the energy range from 5 to 20 eV above the Fermi level using total current spectroscopy (TCS). The structure of the CH{sub 3}–PTTP–CH{sub 3} film surfaces has been studied by atomic force microscopy (AFM), and the atomic compositions of the films have been studied by X-ray photoelectron spectroscopy (XPS). The changes in the maximum intensities measured by the TCS method obtained from the deposited CH{sub 3}–PTTP–CH{sub 3} film and from the substrate during increasing in the organic coating thickness to 6 nm is discussed. The formation of the boundary potential barrier in the n-Si/SiO{sub 2}/CH{sub 3}–PTTP–CH{sub 3} is accompanied by the decrease in the surface work function from 4.2 ± 0.1 to 4.0 ± 0.1 eV as the organic coating thickness increases to 3 nm. The ratio of atomic concentrations C: S in the CH{sub 3}–PTTP–CH{sub 3} films well corresponds to the chemical formula of CH{sub 3}–PTTP–CH{sub 3} molecules. The roughness of the CH{sub 3}–PTTP–CH{sub 3} coating surface was not higher than 10 nm on the ~10 × 10 μm areas as the total CH{sub 3}–PTTP–CH{sub 3}-layer thickness was about 100 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Physical mechanisms of megahertz vibrations and nonlinear detection in ultrasonic force and related microscopies

Use of high frequency (HF) vibrations at MHz frequencies in Atomic Force Microscopy (AFM) advanced nanoscale property mapping to video rates, allowed use of cantilever dynamics for mapping nanomechanical properties of stiff materials, sensing μs time scale phenomena in nanostructures, and enabled detection of subsurface features with nanoscale resolution. All of these methods critically depend on the generally poor characterized HF behaviour of AFM cantilevers in contact with a studied sample, spatial and frequency response of piezotransducers, and transfer of ultrasonic vibrations between the probe and a specimen. Focusing particularly on Ultrasonic Force Microscopy (UFM), this work is also applicable to waveguide UFM, heterodyne force microscopy, and near-field holographic microscopy, all methods that exploit nonlinear tip-surface force interactions at high frequencies. Leveraging automated multidimensional measurements, spectroscopic UFM (sUFM) is introduced to investigate a range of common experimental parameters, including piezotransducer excitation frequency, probed position, ultrasonic amplitude, cantilever geometry, spring constant, and normal force. Consistent with studies of influence of each of these factors, the data-rich sUFM signatures allow efficient optimization of ultrasonic-AFM based measurements, leading to best practices recommendations of using longer cantilevers with lower fundamental resonance, while at the same time increasing the central frequency of HF piezo-actuators, and only comparing results within areas on the order of few μm{sup 2} unless calibrated directly or compared with in-the-imaged area standards. Diverse materials such as Si, Cr, and photoresist are specifically investigated. This work thereby provides essential insight into the reliable use of MHz vibrations with AFM and provides direct evidence substantiating phenomena such as sensitivity to adhesion, diminished friction for certain ultrasonic conditions, and the particular benefit of UFM and related methods for nanoscale mapping of stiff materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al{sub 0.7}Ga{sub 0.3}N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al{sub 0.7}Ga{sub 0.3}N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗