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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Development, and evaluation of thin film substrates containing sodium niobate capacitors, or sodium niobate dielectric material
Development and testing of cadmium sulfide thin film solar array subpanels
Optical transmittance, Hall effect, and spectral photoconductivity measurements on thin films of zinc oxide in vacuum to determine degradation by ultraviolet radiation
Effect of cell vintage and certain testing procedures on degradation of cadmium sulfide thin film solar cells
Production and characterization in thin film form of Cu2S and related Cu compounds such as CuInS2 for photovoltaic cells are examined. The low cost process technology being reported, namely the sulfurization method, is capable of producing films on various substrates. Cathodoluminescence is being used as a diagnostic tool to identify Cu(x)S and CuInS2 compounds. Also, single crystals of CuInS2 are being prepared and it is contemplated that p-n junctions will be made in such crystals.
A state-of-the-art research laboratory was established to grow and characterize amorphous thin films that are useful in semi-conductor devices. Two film systems, nitride films and silicon dioxide films were studied. Over seventy deposition runs for nitride films were made. The films were deposited on silicon substrate using plasma enhanced chemical vapor deposition. It was found that the uniformity of the films were affected by the location of the film on the platen.
Developments in thin-film amorphous and polycrystalline photovoltaic cells are reviewed and discussed with a view to potential applications in space. Two important figures of merit are discussed: efficiency (i.e., what fraction of the incident solar energy is converted to electricity), and specific power (power to weight ratio).
The importance of frequency response considerations in the use of thin-film gages for unsteady heat transfer measurements in transient facilities is considered, and methods for evaluating it are proposed. A departure frequency response function is introduced and illustrated by an existing analog circuit. A Fresnel integral temperature which possesses the essential features of the film temperature in transient facilities is introduced and is used to evaluate two numerical algorithms. Finally, criteria are proposed for the use of finite-difference algorithms for the calculation of the unsteady heat flux from a sampled temperature signal.
Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.
A peculiarity of the pulsed laser deposition technique of thin-film growth which limits its applicability is the very rapid drop of resulting film thickness as a function of distance from the deposition axis. This is due to the narrow forward peaking of the emission plume characteristic of the laser ablation process. The plume is usually modeled by a cos(sup n) theta function with n greater, and in some cases, much higher, than 1. Based on this behavior, a method is presented to substantially enhance coverage uniformity in substrate zones of the order of the target-substrate distance h, and to within a specified thickness tolerance. Essentially, target irradiation is caused to form an annular emission source instead of the usual spot. By calculating the resulting thickness profiles, an optimum radius s is found for the annular source, corresponding to a given power in the emission characteristic and a given value of h. The radius of this annulus scales with h. Calculated numerical results for optimal s/h ratios corresponding to a wide range of values for n are provided for the case of +/- 1% tolerance in deviation from the thickness at deposition axis. Manners of producing annular illumination of the target by means of conic optics are presented for the case of a laser beam with radially symmetric profile. The region of uniform coverage at the substrate can be further augmented by extension of the method to multiple concentric annular sources. By using a conic optic of novel design, it is shown also how a single-laser beam can be focused onto a target in the required manner. Applicability of the method would be limited in practice by the available laser power. On the other hand, the effective emitting area can be large, which favors extremely high growth rates, and since growth can occur uniformly over the whole substrate for each laser pulse, single-shot depositions with substantial thicknesses are possible. In addition, the simultaneity of growth over the complete substrate is desirable when monitoring the growth in situ.
Effect of Niobium substitution at the copper site in YBa2Cu3O(7-x) was studied in thin film form. The films were deposited by laser ablation technique using the targets of the YBa2Cu(3-x)Nb(x)O(y) where x = 0.0, 0.025, 0.05, 0.1, 0.2, 0.4, 0.8 and 1.0 under identical deposition conditions on SrTiO3 (100) substrates. Films were characterized by XRD, resistivity, I-V and J(sub c) measurements. Films made from x = 0.025 and 0.05 concentrations of Nb substituted targets showed relatively improved superconducting properties compared to that of undoped films. the best J(sub c) realized for x - 0.025 Nb concentration was 1.8 x 10(exp 6) A/sq cm and for 0.05 Nb concentration it was 3.2 x 10(exp 6) A/sq cm at 77 K. However, degradation of the superconducting properties, with the increase of x is greater than or equal to 0.1 Nb concentration and drastic suppression and complete loss of superconductivity was noticed for x is greater than or equal to 0.4. The growth of impurity phase YBa2NbO6 for x = 0.1 and above of Nb concentration was noted from XRD (X-Ray Diffraction) patterns. However, the site occupancy of Nb could not be confirmed from these studies.
We introduce a novel methodology for the in-situ measurement of mechanical stress during thin film growth utilizing a highly sensitive non-contact variation of the classic spherometer. By exploiting the known spherical deformation of the substrate the value of the stress induced curvature is inferred by measurement of only one point on the substrate's surface-the sagittal. From the known curvature the stress can be calculated using the well-known Stoney equation. Based on this methodology, a stress sensor has been designed which is simple, highly sensitive, compact, and low cost. As a result of its compact nature, the sensor can be mounted in any orientation to accommodate a given deposition geometry without the need for extensive modification to an already existing deposition system. The technique employs the use of a double side polished substrate that offers good specular reflectivity and is isotropic in its mechanical properties, such as <111> oriented crystalline silicon or amorphous soda lime glass, for example. The measurement of the displacement of the uncoated side during deposition is performed with a high resolution (i.e. 5nm), commercially available, inexpensive, fiber optic sensor which can be used in both high vacuum and high temperature environments (i.e. 10(exp-7) Torr and 480oC, respectively). A key attribute of this instrument lies in its potential to achieve sensitivity that rivals other measurement techniques such as the micro cantilever method but, due to the comparatively larger substrate area, offers a more robust and practical alternative for subsequent measurement of additional characteristics of the film that can might be correlated to film stress. We present measurement results of nickel films deposited by magnetron sputtering which show good qualitative agreement to the know behavior of polycrystalline films previously reported by Hoffman.
Organic compounds offer the possibility of molecular engineering in order to optimize the nonlinearity and minimize damage due to the high-power lasers used in nonlinear optical devices. Recently dicyanovinylanisole (DIVA), ((2-methoxyphenyl) methylenepropanedinitrile) has been shown to have a second order nonlinearity 40 times that of alpha-quartz. Debe et. al. have shown that a high degree of orientational order exists for thin films of phthalocyanine grown by physical vapor transport in microgravity. The microgravity environment eliminates convective flow and was critical to the formation of highly ordered dense continuous films in these samples. This work seeks to discover the parameters necessary for the production of thin continuous films of high optical quality in Earth gravity. These parameters must be known before the experiment can be planned for growing DIVA in a microgravity environment. The microgravity grown films are expected to be denser and of better optical quality than the unit gravity films as was observed in the phthalocyanine films.
A device has been developed for the purpose of measuring longitudinal strain in thin polyethylene films. This paper describes the design, development, calibration, and application of this unique transducer in a variety of low temperature environments. This thin, ring-shaped device has a low effective modulus so as not to interfere with the strain that would naturally occur in a thin film. It has a standard 350 ohm impedance which is compatible with most available bridge balance, amplification, and telemetry instrumentation. This transducer has been successfully used for viscoelastic material characterization experiments in the laboratory, as well as in flight measurements of strain on the surface of scientific balloons during inflation, launch, ascent, and float.
The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.
A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.
We report the study of a Fabry-Perot electro-optical modulator using thin crystalline film NPP, and Crystalline LiNbO3. We are able to observe 14, and 60 percent degree of modulation. Measurements were carried using a standard lock-in amplifier with a silicon detector. The proposal to design a Fabry-Perot electro-optic modulator with an intracavity electro-optically active organic material was based on the initial results using poled polymer thin films. The main feature of the proposed device is the observation that in traditional electrooptic modulators like a Packets cell, it requires few kilovolts of driving voltage to cause a 3 dB modulation even in high figure-of-merit electrooptic materials like LiNbO3. The driving voltage for the modulator can be reduced to as low as 10 volts by introducing the electrooptic material inside die resonant cavity of a Fabry-Perot modulator. This is because the transmission of the Fabry-Perot cavity varies nonlinearly with the change of refractive index or phase of light due to applied electric field.
High vacuum deposition techniques for fabricating thin film capacitors