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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗
NASA NTRS1991

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Wickham, K. R.↗
NASA NTRS1981

Improved performance from solar cells made from candidate sheet silicon materials

Performance of solar cells made from various candidate silicon sheets is updated and the results are presented. Solar cells were fabricated using a baseline process and other process variations, and tested under AM1 conditions. Performance of the baseline solar cells indicates that remarkable improvements in material quality have been achieved for most of the sheets, showing efficiencies close to that of the control cells made from conventional CZ silicon. Process variations (or additions), in general, have resulted in significant improvements in all performance with a degree of change dependent on the process chosen and to a certain extent the sheet quality.

Yoo, H. I.↗
NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗
NASA NTRS1977

Preliminary results of accelerated exposure testing of solar cell system components

Plastic samples and solar cell sub modules were exposed to an accelerated outdoor environment in Arizona and an accelerated simulated environment in a cyclic ultraviolet exposure tester which included humidity exposure. These tests were for preliminary screening of materials suitable for use in the manufacture of solar cell modules which are to have a 20-year lifetime. The samples were exposed for various times up to six months, equivalent to a real time exposure of four years. Suitable materials were found to be FEP-A, FEP-C, PFA, acrylic, silicone compounds and adhesives and possibly parylene. The method of packaging the sub modules was also found to be important to their performance.

Anagnostou, E.↗
NASA NTRS1978

A life prediction methodology for encapsulated solar cells

This paper presents an approach to the development of a life prediction methodology for encapsulated solar cells which are intended to operate for twenty years or more in a terrestrial environment. Such a methodology, or solar cell life prediction model, requires the development of quantitative intermediate relationships between local environmental stress parameters and the basic chemical mechanisms of encapsulant aging leading to solar cell failures. The use of accelerated/abbreviated testing to develop these intermediate relationships and in revealing failure modes is discussed. Current field and demonstration tests of solar cell arrays and the present laboratory tests to qualify solar module designs provide very little data applicable to predicting the long-term performance of encapsulated solar cells. An approach to enhancing the value of such field tests to provide data for life prediction is described.

Coulbert, C. D.↗
NASA NTRS1977

Developments in vertical-junction silicon solar cells

Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.

Lindmayer, J.↗
NASA NTRS1976

Sensitivity of solar-cell performance to atmospheric variables. 1: Single cell

The short circuit current of a typical silicon solar cell under direct solar radiation was measured for a range of turbidity, water vapor content, and air mass to determine the relation of the solar cell calibration value (current-to-intensity ratio) to those atmospheric variables. A previously developed regression equation was modified to describe the relation between calibration value, turbidity, water vapor content, and air mass. Based on the value of the constants obtained by a least squares fit of the data to the equation, it was found that turbidity lowers the value, while increase in water vapor increases the calibration value. Cell calibration values exhibited a change of about 6% over the range of atmospheric conditions experienced.

Klucher, T. M.↗
NASA NTRS1985

Basic concepts for the design of high-efficiency single-junction and multibandgap solar cells

Concepts for obtaining practical solar-cell modules with one-sun efficiencies up to 30 percent at air mass 1 are now well understood. Such high-efficiency modules utilize multibandgap structures. To achieve module efficiencies significantly above 30 percent, it is necessary to employ different concepts such as spectral compression and broad-band detection. A detailed description of concepts for the design of high-efficiency multibandgap solar cells is given.

Fan, J. C. C.↗
NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗