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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Superconducting dome and structural changes in LaRu 3 ⁢Si 2 under pressure

LaRu 3 ⁢Si 2 is of current research interest as a kagome metal with a superconducting transition temperature, 𝑇 𝑐 ∼7 K, and higher-temperature charge density wave orders. Here we report on electrical transport and x-ray diffraction measurements on LaRu 3 ⁢Si 2 under pressure up to 65 GPa and 35 GPa, respectively. The superconducting transition temperature 𝑇 𝑐 first gets slightly enhanced and reaches a maximum ∼8.7 K at ∼8.5 GPa. With further applied pressure, 𝑇 𝑐 is initially gradually suppressed, then more rapidly suppressed, followed by gradual suppression, revealing a superconducting dome. Two possible pressure-induced structural phase transitions are also observed at room temperature, from the original hexagonal phase to another hexagonal structure above ∼11.5 GPa, and further to a structure with lower symmetry above ∼23.5 GPa. These transition pressures roughly correlate with features found in our pressure-dependent transport data.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Temperature-dependent magnetic-field-induced ab -plane Gd spin reorientations in antiferromagnetic domains in a single crystal of the tetragonal A-type antiferromagnet GdRh 2 Si 2

The compound GdRh 2 Si 2 crystallizes in the body-centered tetragonal ThCr 2 Si 2 structure and exhibits A-type antiferromagnetic order below its Néel temperature T N = 107 K where the Gd moments are ferromagnetically aligned in the ab-plane with the moments in adjacent planes aligned antiferromagnetically. Previously, the nonlinear low-field magnetization versus field M ab ( H ∥ [1, 0, 0]) measurements on single crystals were interpreted in terms of a mean-field model. Here, in this work, we reinterpret this nonlinearity more simply in terms of the response of the ordered moments in four noninteracting tetragonal domains to the applied field and find good agreement with our theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Thermonuclear reaction rate of 30 Si($p, γ$) 31 P

Silicon synthesis in high-temperature hydrogen burning environments presents one possible avenue for the study of abundance anomalies in globular clusters. This was suggested in a prior study, which found that the large uncertainties associated with the Si 30 ( p , γ ) P 31 reaction rate preclude a firm understanding of the stellar conditions that give rise to the Mg-K anticorrelation observed in the globular cluster NGC 2419. In an effort to improve the reaction rate, we present new strength measurements of the E r lab = 435 keV and E r lab = 501 keV resonances in Si 30 ( p , γ ) P 31 . For the former, which was previously unobserved, we obtain a resonance strength of ω γ = ( 1.14 ± 0.25 ) × 10 – 4 eV. For the latter, we obtain a value of ω γ = ( 1.88 ± 0.14 ) × 10 – 1 eV, which has a smaller uncertainty compared to previously measured strengths. Based on these results, the thermonuclear reaction rate has been re-evaluated. The impact of the new measurements is to lower the reaction rate by a factor of ≈ 10 at temperatures important to the study of NGC 2419. The rate uncertainty at these temperatures has also been reduced significantly.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

High-precision mass measurement of Si 24 and a refined determination of the r p process at the A = 22 waiting point

We report a high-precision mass measurement of 24 Si, performed with the Low Energy Beam and Ion Trap (LEBIT) facility at the National Superconducting Cyclotron Laboratory. The atomic mass excess, 10 753.8 (37) keV, is a factor of 5 more precise than previous results. This substantially reduces the uncertainty of the 23 Al(p ,γ) 24 Si reaction rate, which is a key part of the rapid proton capture (rp) process powering type I x-ray bursts. Furthermore, the updated rate constrains the onset temperature of the (α,p) process at the 22 Mg waiting point to a precision of 9%.

20 ≤ A ≤ 38↗
DOE OSTI2024

Suppressed electric quadrupole collectivity in Si 32

Lying between O 16 and Ca 40 , the s d shell is well described by robust phenomenological and nuclear theories. In this work, however, we highlight an unexplained reduction in electric-quadrupole strength in the rare isotope Si 32 , studied through sub-barrier Coulomb excitation. It is found that the oblate nature of the deformation is well reproduced, while the absolute scale of quadrupole deformation, however, is inhibited by approximately a factor of 2 compared to theoretical predictions. Through comparison with shell-model and calculations, we present a number of possible explanations for this inhibited E 2 strength. By comparing the results of these calculations to multiple observables, we conclude that there is a reduced role for out-of-space excitations in Si 32 , resulting in a reduction in the corrections normally applied to both models. Published by the American Physical Society 2024

20 ≤ A ≤ 38↗
DOE OSTI2021

Nodeless kagome superconductivity in LaRu 3 Si 2

We report muon spin rotation (μSR) experiments together with first-principles calculations on microscopic properties of superconductivity in the kagome superconductor LaRu 3 Si 2 with T c ≃ 7K. Below Tc, μSR reveals type-II superconductivity with a single s-wave gap, which is robust against hydrostatic pressure up to 2 GPa. We find that the calculated normal state band structure features a kagome flat band, and Dirac as well as van Hove points formed by the Ru-dz 2 orbitals near the Fermi level. We also find that electron-phonon coupling alone can only reproduce a small fraction of T c from calculations, which suggests other factors in enhancing T c such as the correlation effect from the kagome flat band, the van Hove point on the kagome lattice, and the high density of states from narrow kagome bands. Our experiments and calculations taken together point to nodeless moderate coupling kagome superconductivity in LaRu 3 Si 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Carrier properties of Bi(111) grown on mica and Si(111)

A comparison is presented between properties of Bi(111) films grown by Stranski-Krastanov epitaxy on Si(111) 7 × 7 and by van der Waals epitaxy on mica substrates. Thin film morphologies and electronic transport properties of Bi(111) films of variable thickness are investigated for each growth method. Atomic force micrographs for Bi(111) films on mica reveal clearly defined triangular regions consisting of layered steps with height 0.4 nm, corresponding to the Bi(111) bilayer height. Variable-temperature electronic transport measurements show the existence of a quantum confinement-induced energy gap in the film interiors, resulting in a semimetal-to-semiconductor transition. Magnetotransport analysis in a three-carrier model including metallic electrons in surface states and electrons and holes in the films' interiors provides a detailed study of densities, mobilities, and mean-free paths of the three carrier types. Further, improved electronic transport properties are found in Bi(111) films of higher thickness on mica compared to on Si(111), a likely result of the largely strain-free van der Waals epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin-lattice coupling in magnetocaloric Gd 5 ( Ge , Si ) 4 alloys by $in$ $situ$ x-ray pair distribution analysis in magnetic field

Here, using in situ x-ray pair distribution analysis in magnetic field, we study the strong spin-lattice coupling in archetypal magnetocaloric Gd 5 (Ge,Si) 4 alloys manifested by the presence of a first order paramagnetic (PM)-to-ferromagnetic (FM) phase transition that can be triggered by either decreasing temperature in zero magnetic field or increasing magnetic field at constant temperature. We find that the coupling arises from the tendency of Gd-(Si,Ge) slabs in the alloys to reversibly slide against each other to both pack closely and couple ferromagnetically. We also find that, locally, the packing of slabs in FM phases induced by decreasing temperature in zero field is different from that in FM phases of the same chemical composition induced by increasing magnetic field isothermally, indicating that temperature and magnetic field are coupled but not necessarily equivalent control variables for triggering phase transitions in strongly correlated systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Investigation of 31 P levels near the proton threshold with nuclear resonance fluorescence and the impact on the 30 Si (𝑝,𝛾)⁢ 31 P thermonuclear rate

We investigated the nuclear structure of 31 P near the proton threshold using nuclear resonance fluorescence (NRF) to refine the properties of key resonances in the 30 Si (𝑝,𝛾)⁢ 31 P reaction, which is critical for nucleosynthesis in stellar environments. Excitation energies and spin-parities were determined for several states, including two unobserved resonances at 𝐸 𝑟 = 18.7keV and 𝐸 𝑟 = 50.5keV. The angular correlation analysis enabled the first unambiguous determination of the orbital angular momentum transfer for these states. These results provide a significant update to the 30 Si (𝑝,𝛾)⁢ 31 P thermonuclear reaction rate, with direct implications for models of nucleosynthesis in globular clusters and other astrophysical sites. The revised rate is substantially lower than previous estimates at temperatures below 200 MK, affecting predictions for silicon isotopic abundances in stellar environments. Furthermore, our work demonstrates the power of NRF in constraining nuclear properties, and provides a framework for future studies of low-energy resonances relevant to astrophysical reaction rates.

20 ≤ A ≤ 38↗
DOE OSTI2025

Artificial-intelligence-assisted analysis of 28 Si * → 7⁢𝛼 breakup data

Mid-weight 𝛼-conjugate nuclei are predicted to possess exotic toroid like resonances with high angular momenta. The search for these states in 28 Si* is the main point of two published experimental investigations of the peripheral 28 Si + 12 C reaction by Cao and collaborators and by Hannaman and collaborators. In this work, we develop a novel artificial intelligence (AI) based machine learning method utilizing the Gaussian Mixture Model (GMM) to analyze available experimental and theoretical data. Here, we additionally study the reaction with the Hybrid 𝛼-Cluster (H⁡𝛼⁢C) model. In all the examined data, our results suggest the presence of underlying structure which is close to that predicted for toroidal states.

Breakup reactions↗
DOE OSTI2026

Carbon-nitrogen complex as an alternative to the 𝑇 center in Si

A first-principles study of a carbon-nitrogen (CN) impurity complex in silicon is presented as an isoelectronic alternative to the T center [(CCH) Si ]. The latter has been pursued for applications in quantum information science, yet its sensitivity to the presence of hydrogen is still problematic. Our proposed complex has no hydrogen, thereby eliminating this issue. First, we show that the CN complex is stable against decomposition into substitutional and interstitial defects. Next, we show that due to being isoelectronic to the T center, the CN complex has a similar electronic structure, and therefore could be used in similar applications. We assess several low-energy configurations of the CN complex, finding (CN) Si to be stable and have the largest Debye-Waller factor. We predict a zero-phonon line (ZPL) of 828 meV (in the telecom S-band) and a radiative lifetime of 4.2 μs, comparable to the T center. Due to the presence of a bound exciton, choice of the exchange-correlation functional and also supercell-size scaling of the ZPL and transition dipole moment require special scrutiny; we rigorously justify our extrapolation schemes that allow computing values in the dilute limit.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP 2 is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP 2 thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP 2 could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.

14 SOLAR ENERGY↗
DOE OSTI2020

Outdoor Testing of c-Si Photovoltaic Modules with Spectrally-Selective Mirrors for Operating Temperature Reduction

The efficiency of a c-Si cell drops with increasing cell temperature. A typical photovoltaic module with a c-Si cell will operate 20-30K above ambient temperature. Spectrally-selective photonic mirrors which reflect sub-bandgap light can reduce waste heat generated by parasitic absorption in the module and reduce module operating temperature. Here, a spectrally selective 4-layer and 12-layer mirror are designed and fabricated on module cover glass. When integrated into modules, these mirrors reduce the operating temperature of the module by 0.16K and 1.5K, respectively when compared to a module with bare outer glass.

14 SOLAR ENERGY↗
DOE OSTI2020

III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations

Integrating wide-bandgap III-V with Si solar cells has been shown to yield higher efficiencies than Si alone: As also presented at this conference, four-terminal efficiencies exceeding 32% have been attained. In this contribution, independent and electrically connected operation of the subcells in such tandem cells is examined. The optics of the tandem cell change significantly if a conducting interconnect, rather than an insulating glass slide, is required between the subcells. These effects are studied, and optically optimized structures for different types of tandem cell operation are presented. It is found that minimizing reflection at the conductive interface between the two cells while maintaining conductivity is the key challenge faced in such devices.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Interdigitated back contact (IBC) solar cells achieve the highest efficiencies of single-junction architectures, but complicated patterning of the rear fingers and spreading of dopants during processing inhibit their mainstream adoption due to concerns of shunting between the IBC fingers. One method of simplifying patterning at the rear is by using contact masks combined with plasma-enhanced chemical vapor deposition (PECVD) or ion implantation. However, the intrinsic isolation region becomes contaminated during high-temperature annealing by lateral diffusion of dopants and during masked PECVD by spreading of dopant radicals through region between the mask and the substrate. Despite this contamination, we show through scanning spreading resistance microscopy and Kelvin probe force microscopy that a ~20 µm wide compensating region exists with high enough resistivity to prevent shunting. We model this p-i-n poly-Si system using two simulation models: a simple resistor model considering only the capture of charge carriers by trap defects in poly-Si to reduce the conductivity, and a more refined 1-dimensional finite element model using Poisson’s equation, drift-diffusion equations, and recombination of carriers. Using this model, we show that high defect density significantly decreases the current across the region between the p- and n-type fingers, preventing shunting.

atom probe↗
DOE OSTI2023

Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a rate at which recycling is becoming necessary. A novel module architecture has been demonstrated that has potential for high value recycling for c-Si PV. This architecture eliminates the vacuum lamination process and cross-linked en capsulants. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with NREL. These modules are being tested against traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while retaining module performance.

computer architecture↗
DOE OSTI2024

Developments for Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a significant rate. A novel module architecture has been demonstrated that has potential for reducing manufacturing cost while improving module reliability and recycling for c-Si PV which utilizes an edge-seal. Referred to as Edge Sealed Module (ESM), this architecture eliminates the vacuum lamination process and cross-linked encapsulants on the interior of the module. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with National Renewable Energy Laboratories (NREL). These modules are being tested and compared to traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while enhancing module performance.

costs↗
DOE OSTI2025

Preliminary hyperspectral neutron radiography of binder jet 3D printed and melt infiltrated Si–SiC

The preliminary results of hyperspectral neutron radiography of Si–SiC made with binder jet additive manufacturing, subsequent carbon addition, and silicon melt infiltration are presented. The samples were measured in the processing states before and after the melt infiltration to determine if neutrons would help characterize the microstructure to better understand the melt infiltration process. Theoretical Bragg edges were calculated for comparison with the radiographic results. The changes in the Bragg edges from pre- to post-infiltrated reaction-bonded SiC were evident, that could be used to address the differences in microstructures. In conclusion, the preliminary results presented in this study demonstrated that neutron Bragg-edge imaging is possible with Si–SiC reaction-bonded ceramics and can help determine the microstructure of melt infiltrated samples.

SiC↗