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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

BIB mixers

We have determined that the multi-pin 'microprocessor style' packages in which current Blocked Impurity Band (BIB) devices are mounted will not meet our IF bandwidth spec of greater than 2 GHz for a practical mixer. Hence we have started to repackage the Ga:Ge BIB devices in new microwave compatible packages. The smaller size of the microwave package mount necessitates cutting the BIB array down to include only the 3 smallest detectors: 0.2, 0.4, and 0.6 mm sq. A FIR beam incident at f/1.5 can be focussed on the smallest element for wavelengths shorter than 100 microns. A more typical (easier) beam convergence of f/3 will require 0.4 mm elements at 100 microns and 0.6 mm elements at 170 microns wavelength. Since the device capacitance (parasitic loss) scales with detector size, there is a tradeoff of speed of response and optical convenience. Our existing optics produce only the slower convergence beam, so we need to redesign the optical layout and are looking at long focal length all-reflective microscope objectives. BIB detectors and the edge-coupled microbolometers have restricted IF bandwidths, an order of magnitude less than what is possible with the Schottky-diode mixers we currently use for astronomical observations. Consequently the frequencies of the FIR laser lines must be close to the astronomical line of interest to be an effective Local Oscillator (LO). We have therefore begun a coordinated effort to discover and measure new FIR laser transition lines in close frequency coincidence with important astrophysical lines. Most of this effort involves pumping isotopic variants of known good laser molecules with laser lines from isotopic variants of CO2. We have been most successful in detecting new FIR lines in deuterated ammonia. One line in particular is very close to the frequency of HD rotational line at 2675 GHz.

Source record↗
NASA NTRS1994

Microfabricated Hydrogen Sensor Technology for Aerospace and Commercial Applications

Leaks on the Space Shuttle while on the Launch Pad have generated interest in hydrogen leak monitoring technology. An effective leak monitoring system requires reliable hydrogen sensors, hardware, and software to monitor the sensors. The system should process the sensor outputs and provide real-time leak monitoring information to the operator. This paper discusses the progress in developing such a complete leak monitoring system. Advanced microfabricated hydrogen sensors are being fabricated at Case Western Reserve University (CWRU) and tested at NASA Lewis Research Center (LeRC) and Gencorp Aerojet (Aerojet). Changes in the hydrogen concentrations are detected using a PdAg on silicon Schottky diode structure. Sensor temperature control is achieved with a temperature sensor and heater fabricated onto the sensor chip. Results of the characterization of these sensors are presented. These sensors can detect low concentrations of hydrogen in inert environments with high sensitivity and quick response time. Aerojet is developing the hardware and software for a multipoint leak monitoring system designed to provide leak source and magnitude information in real time. The monitoring system processes data from the hydrogen sensors and presents the operator with a visual indication of the leak location and magnitude. Work has commenced on integrating the NASA LeRC-CWRU hydrogen sensors with the Aerojet designed monitoring system. Although the leak monitoring system was designed for hydrogen propulsion systems, the possible applications of this monitoring system are wide ranged. Possible commercialization of the system will also be discussed.

Hunter, Gary W.↗
NASA NTRS1995

Digital Pulse-Width-Modulation Circuit

Digital pulse-width-modulation circuit provides programmable duration from 1 microsecond to full on, at repetition rate of 1 kHz. Designed for use in controlling CO2 laser, also used in applications in which precision and flexibility of digital control of pulse durations needed. Circuit incorporates low-power Schottky transistor/transistor-logic (TTL) devices in critical high-speed parts. Designed in TTL to make it compatible with Pro-Log 7914 (or equivalent) decoder input/output (I/O) utility printed-circuit card.

Wenzler, Carl J.↗
NASA NTRS1995

Back-To-Back Barrier Varactor Frequency Multipliers

Two reports present further detailed information about odd-harmonic frequency-multiplier devices described in "Barrier/n/n+ Varactor Frequency Multipliers" (NPO-18428). Devices comprise Schottky-barrier/n/n+ diodes in planar back-to-back configuration.

Choudhury, Debabani↗
NASA NTRS1995

The Submillimeter Wave Astronomy Satellite

The Submillimeter Wave Astronomy Satellite (SWAS) mission is dedicated to the study of star formation and interstellar chemistry. To carry out this mission, SWAS will survey dense (n(sub H2) greater than 10(exp 3) cm(exp -3)) molecular clouds within our galaxy in either the ground-state of a low-lying transition of five astrophysically important species: H2O, H2O-18, O2, CI, and CO-13. By observing these lines SWAS will: (1) test long-standing theories that predict that these species are the dominant coolants of molecular clouds during the early stages of their collapse to form stars and planets, and (2) supply heretofore missing information about the abundanceof key species central to the chemical models of dense interstellar gas. SWAS will employ two independent Schottky barrier diode mixers, passively cooled to approx. 150 K, coupled to a highly efficient 54 x 68 cm off-axis Cassegrain antenna. During its two year mission, SWAS will observe giant and dark cloud cores with the goal of detecting or setting an upper limit on the water abundance of 3 x 10(exp -6) and on th molecular oxygen abundances of 2 x 10(exp -6), both relative to H2. In addition, advantage will be taken of SWAS's relatively large beamsize of 3.2 x 4.0 arcminutes at 551 GHz and 3.6 x 4.5 arcminutes at 492 GHz to obtain large-area (approx. 1 deg x 1 deg) maps of giant and dark clouds in the CO-13 and CI lines. SWAS is scheduled for launch in mid-1995.

Melnick, Gary J.↗
NASA NTRS1996

PtSi/Si LWIR Detectors Made With p+ Doping Spikes

PtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.

Lin, True-Lon↗
NASA NTRS1996

PtSi/Si MWIR Detectors Made With p+ Doping Spikes

Ptsi/Si Schottky-barrier devices detecting medium-wavelength infrared (MWIR) photons demonstrated. Cutoff wavelengths extended to 7 micrometer and dark currents low enough that when cooled to temperature of liquid nitrogen devices suitable for night imaging of scenes at temperatures less than 0 degrees C.

Lin, True-Lon↗
NASA NTRS1996

Recent progress in submillimeter heterodyne receiver development

The progress made in relation to the development of sensitive submillimeter heterodyne receiver systems is reviewed. Sensitive superconductor-insulator-superconductor (SIS) tunnel junction mixers were demonstrated at frequencies of greater than 1 THz, with noise temperatures of below 1000 K. An alternative mixer technology is that of the superconducting hot electron bolometer, for which sensitivities of 1.2 THz and 2.5 THz were demonstrated. Local oscillator technology is under development. Gunn oscillators followed by Schottky varactor frequency multipliers have sufficient output power to drive SIS mixers at 1 THz. It is considered that optical photomixer local oscillators have potential for driving hot electron bolometers above 1 THz.

Zmuidzinas, J.↗
NASA NTRS1997

The Submillimeter Wave Astronomy Satellite: Science objectives and instrument description

The submillimeter wave astronomy satellite (SWAS) mission is dedicated to the investigation of star formation and interstellar chemistry. In order to perform the mission, SWAS will survey dense molecular clouds within the Milky Way Galaxy in either the ground state or a low-lying transition of five astrophysically-significant species: H2O, H2(18)O, O2, C I and (13)CO. The observation of these lines will: test theories that predict that these species are dominant coolants of molecular clouds during early stages of their collapse to form stars and planets, and supply information concerning the abundance of species central to the chemical models of dense interstellar gas. The SWAS will use two independent Schottky barrier diode mixers and a 53 x 68 sq cm, off-axis Cassegrain antenna.

Melnick, G. J.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS1995

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗
NASA NTRS1998

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Lu, W. J.↗
NASA NTRS2000

Gas Sensing Diode and Method of Manufacturing

A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 C. The diode is both sensitive and stable at elevated temperatures.

Hunter, Gary William↗
NASA NTRS2000

Sub-Micron Long HTS Ho Electron Mixers

The hot-electron bolometer mixer made from a high-T, superconductor (HTS) was introduced recently as an alternative to a Schottky mixer at THz frequencies. The performance of the mixer depends on the total thermal conductance for heat removal from the phonon sub-system due to either length-dependent phonon diffusion or phonon escape to the substrate. We have measured both the length and temperature dependencies of the IF bandwidth of the mixers fabricated from 25-35 mn thick YBCO films on MgO and sapphire substrates. The films were grown by a laser deposition technique and electron-beam lithography was used to define bridge lengths down to 50 nm. Mixer measurements were done using signal frequencies in the range of 1-100 GHz. For 50 nm and 400 nm long devices on MgO, the 3-dB bandwidth was about 100 MHz. At temperatures below 60 K, the hot-electron plateau was clearly seen starting around 2-3 GHz. At temperatures above 70 K, the flux-flow effects begin to dominate and the IF bandwidth increases to 1-8 GHz, while the conversion efficiency drops by several dB. This temperature dependence of the IF bandwidth can account for previously reported unexpectedly high bandwidth of HTS mixers.

Harnack, 0.↗
NASA NTRS2000

Microwave Mixing and if Bandwidth in Sub-Micron Long High -T(sub c) Hot - Electron Bolometers

The hot-electron bolometer (HEB) mixer made from a high-T(sub c) superconductor (HTS) was introduced recently as a competing alternative to a Schottky mixer. The HEB mixer would require 100-times less LO power and thus would be a desirable candidate for long-term observational missions such as atmospheric remote-sensing and planetary science. The required cooling temperatures between 65 K and 75 K can be achieved with available space-qualified coolers or even with passive radiative coolers.

Harnack, Oliver↗
NASA NTRS2000

Modeling of Current-Voltage Characteristics in Large Metal-Semiconducting Carbon Nanotube Systems

A model is proposed for two observed current-voltage (I-V) patterns in recent experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 (1997)]. We claim that there are two contact modes for a tip (metal)-nanotube (semiconductor) junction depending whether the alignment of the metal and the semiconductor band structures is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this model to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor with metallic electrodes at low temperature [Zhou et al., Appl. Phys. Lett. 76, 1597 (2000)], and show that two independent metal-semiconductor junctions in series are responsible for the observed behavior.

Yamada, Toshishige↗
NASA NTRS2001

Metallic Electrode: Semiconducting Nanotube Junction Model

A model is proposed for two observed current-voltage (I-V) patterns in an experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 ('97)]. We claim that there are two contact modes for a tip (metal) -nanotube semi conductor) junction depending whether the alignment of the metal and semiconductor band structure is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this picture to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor (Zhou et al., Appl. Phys. Lett. 76, 1597 ('00)], and show that two independent metal-semiconductor junctions connected in series are responsible for the observed behavior.

Yamada, Toshishige↗
NASA NTRS2001

Gas Sensing Diode Comprising SiC

A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

Hunter, Gary William↗