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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Structure of VanS from vancomycin-resistant enterococci: A sensor kinase with weak ATP binding

The VanRS two-component system regulates the resistance phenotype of vancomycin-resistant enterococci. VanS is a sensor histidine kinase that responds to the presence of vancomycin by autophosphorylating and subsequently transferring the phosphoryl group to the response regulator, VanR. The phosphotransfer activates VanR as a transcription factor, which initiates the expression of resistance genes. Structural information about VanS proteins has remained elusive, hindering the molecular-level understanding of their function. Here, we present X-ray crystal structures for the catalytic and ATP-binding (CA) domains of two VanS proteins, derived from vancomycin-resistant enterococci types A and C. Both proteins adopt the canonical Bergerat fold that has been observed for CA domains of other prokaryotic histidine kinases. We attempted to determine structures for the nucleotide-bound forms of both proteins; however, despite repeated efforts, these forms could not be crystallized, prompting us to measure the proteins' binding affinities for ATP. Unexpectedly, both CA domains displayed low affinities for the nucleotide, with K D values in the low millimolar range. Since these K D values are comparable to intracellular ATP concentrations, this weak substrate binding could reflect a way of regulating expression of the resistance phenotype.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2015

Corrosion resistance of kolsterised austenitic 304 stainless steel

Austenitic stainless suffers from low wear resistance in applications where rubbing against other surfaces is encountered. This drawback can be overcome by surface treatment such as coating by hard materials. Other treatments such as carburization at relatively low temperature become applicable recently to improve hardness and wear resistance. Carburization heat treatment would only be justified if the corrosion resistance is unaffected. In this work samples of 304 stainless steels treated by colossal supersaturation case carburizing (known as Kolsterising) carried out by Bodycote Company was examined for pitting corrosion resistance at room temperature and at 50 °C. Comparison with results obtained for untreated samples in similar testing conditions show that there is no deterioration in the pitting resistance due to the Kolsterising heat treatment. X ray diffraction patterns obtained for Kolsterising sample showed that peaks correspond to the austenite phase has shifted to lower 2θ values compared with those of the untreated sample. The shift is an indication for expansion of austenite unit cells caused by saturation with diffusing carbon atoms. The XRD of Kolsterising samples also revealed additional peaks appeared in the patterns due to formation of carbides in the kolsterised layer. Examination of these additional peaks showed that these peaks are attributed to a type of carbide known as Hagg carbide Fe{sub 2}C{sub 5}. The absence of carbides that contain chromium means that no Cr depletion occurred in the layer and the corrosion properties are maintained. Surface hardness measurements showed large increase after Kolsterising heat treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Nanometer-Scale Measurement of Grid Finger Electrical Conduction Pathways to Detect Series Resistance Degradation of Utility-Scale Silicon Solar Cells

Here, we report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility-scale photovoltaic power plant by imaging the local resistance at the Ag/Si interface of the c-Si front metallization. Scanning spreading resistance microscopy imaging with nanometer (nm) scale spatial resolution revealed that the number of point or small-area electrical contacts decreased substantially in a degraded cell compared to an unaffected cell, demonstrating the root cause of Rs degradation. The decrease in electrical contacts is likely caused by a structural change - the Ag particles in contact with the Si cell (or via a nm-thickness tunneling glass layer) aggregate into bulk Ag, and a highly resistive glass frit forms a belt shape at the Ag/Si interface. This resistive belt, with a thickness of ~1 um, blocks the current conduction from the cell emitter to the Ag grid. Our microscopy results help to unravel unambiguously the degradation mechanism and demonstrate an example of the multiscale characterization approach for understanding degradation in field-weathered PV module.

14 SOLAR ENERGY↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si front metallization. Scanning spreading resistance microscopy imaging revealed that the number of point or small area electrical contacts decreased in a degraded cell compared to an unaffected cell, demonstrating the direct root cause of the Rs degradation. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the degradation during the long-term field service. The reduction in electrical contact is likely caused by a structural change: The Ag particles in contact with the Si cell aggregate into bulk Ag, and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 um blocks the current conduction from cell emitter to the Ag grid. Our results demonstrate an example of the multi-scale characterization approach for understanding degradation mechanisms in photovoltaics.

c-Si solar cell↗
DOE OSTI2019

Native Plasmid-Encoded Mercury Resistance Genes Are Functional and Demonstrate Natural Transformation in Environmental Bacterial Isolates

Plasmid-mediated horizontal gene transfer (HGT) is a major driver of genetic diversity in bacteria. We experimentally validated the function of a putative mercury resistance operon present on an abundant 8-kbp native plasmid found in groundwater samples without detectable levels of mercury. Phylogenetic analyses of the plasmid-encoded mercury reductases from the studied groundwater site show them to be distinct from those reported in proximal metal-contaminated sites. We synthesized the entire native plasmid and demonstrated that the plasmid was sufficient to confer functional mercury resistance in Escherichia coli . Given the possibility that natural transformation is a prevalent HGT mechanism in the low-cell-density environments of groundwaters, we also assayed bacterial strains from this environment for competence. We used the native plasmid-encoded metal resistance to design a screen and identified 17 strains positive for natural transformation. We selected 2 of the positive strains along with a model bacterium to fully confirm HGT via natural transformation. From an ecological perspective, the role of the native plasmid population in providing advantageous traits combined with the microbiome’s capacity to take up environmental DNA enables rapid adaptation to environmental stresses. Horizontal transfer of mobile genetic elements via natural transformation has been poorly understood in environmental microbes. Here, we confirm the functionality of a native plasmid-encoded mercury resistance operon in a model microbe and then query for the dissemination of this resistance trait via natural transformation into environmental bacterial isolates. We identified 17 strains including Gram-positive and Gram-negative bacteria to be naturally competent. These strains were able to successfully take up the plasmid DNA and obtain a clear growth advantage in the presence of mercury. Our study provides important insights into gene dissemination via natural transformation enabling rapid adaptation to dynamic stresses in groundwater environments.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2019

Orally Bioavailable Androgen Receptor Degrader, Potential Next-Generation Therapeutic for Enzalutamide-Resistant Prostate Cancer

Androgen receptor (AR)-targeting prostate cancer drugs, which are predominantly competitive ligand-binding domain (LBD)-binding antagonists, are inactivated by common resistance mechanisms. It is important to develop next-generation mechanistically distinct drugs to treat castration- and drug-resistant prostate cancers. Second-generation AR pan antagonist UT-34 was selected from a library of compounds and tested in competitive AR binding and transactivation assays. In this study, UT-34 was tested using biophysical methods for binding to the AR activation function-1 (AF-1) domain. Western blot, gene expression, and proliferation assays were performed in various AR-positive enzalutamide-sensitive and -resistant prostate cancer cell lines. Pharmacokinetic and xenograft studies were performed in immunocompromised rats and mice. UT-34 inhibits the wild-type and LBD-mutant ARs comparably and inhibits the in vitro proliferation and in vivo growth of enzalutamide-sensitive and -resistant prostate cancer xenografts. In preclinical models, UT-34 induced the regression of enzalutamide-resistant tumors at doses when the AR is degraded; but, at lower doses, when the AR is just antagonized, it inhibits, without shrinking, the tumors. This indicates that degradation might be a prerequisite for tumor regression. Mechanistically, UT-34 promotes a conformation that is distinct from the LBD-binding competitive antagonist enzalutamide and degrades the AR through the ubiquitin proteasome mechanism. UT-34 has a broad safety margin and exhibits no cross-reactivity with G-protein–coupled receptor kinase and nuclear receptor family members. Collectively, UT-34 exhibits the properties necessary for a next-generation prostate cancer drug.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Bacterial Resistance Toward Antimicrobial Ionic Liquids Mediated by Multidrug Efflux Pumps

The effective elimination of foodborne pathogens through cleaning and disinfection measures is of great importance to the food processing industry. As food producers rely heavily on disinfectants to control pathogenic bacteria in their facilities, the increasing spread of tolerant, often even multidrug resistant, strains is of particular concern. In addition to efforts to prevent or at least reduce development and spread of strains resistant to disinfectants and sanitizers, there is an urgent need for new and effective antimicrobials. One new class of promising antimicrobials is ionic liquids (ILs), which have been reported to be effective against resistant strains as they interact with bacterial cells in multiple ways, but investigations of their effectivity against MDR bacteria or specific defense mechanisms are still limited. This study investigates the role of multidrug efflux pumps of the Resistance Nodulation-Division family (RND) on the resistance of bacterial pathogens Escherichia coli and Salmonella enterica serovar Typhimurium toward 10 antimicrobial active ILs. Results reveal that, while known structure–activity relationships (SARs), such as the side-chain effect, were found for all strains, antimicrobial ILs with one elongated alkyl side chain were significantly affected by the RND efflux pump, highlighting the importance of efflux pumps for future IL toxicity studies. In case of antimicrobial ILs with multiple side chains and different cationic head groups, two ILs were identified that were highly active against all investigated strains with little to no effect of the efflux pump. The results obtained in this study for RND efflux pumps can serve as a starting point for identifying and designing antimicrobial ILs as effective biocides against MDR bacteria.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2023

Zinc‐Imidazolate Films as an All‐Dry Resist Technology

Here, motivated by the drawbacks of solution phase processing, an all‐dry resist formation process is presented that utilizes amorphous zinc‐imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed by novel low temperature (120 °C) gas phase etching using 1,1,1,5,5,5‐hexafluoroacetylacetone (hfacH) to achieve well‐resolved 22 nm lines with a pitch of 30 nm. The effects of electron beam irradiation on the chemical structure and hfacH etch resistance of aZnMIm films are investigated, and it is found that electron irradiation degrades the 2‐methylimidazolate ligands and transforms aZnMIm into a more dense material that is resistant to etching by hfacH and has a C:N:Zn ratio effectively identical to that of unmodified aZnMIm. These findings showcase the potential for aZnMIm films to function in a dry resist technology. Sensitivity, contrast, and critical dimensions of the patterns are determined to be 37 mC cm −2 , 0.87, and 29 nm, respectively, for aZnMIm deposited on silicon substrates and patterned at 30 keV. This work introduces a new direction for solvent‐free resist processing, offering the prospect of scalable, high‐resolution patterning techniques for advanced semiconductor fabrication processes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties

Abstract Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, “random network,” “columnar scaffold,” and “island‐like,” are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with “columnar scaffold” morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a “columnar scaffold” morphology further confirms the contribution from grain boundaries. In contrast, the “random network” or “island‐like” structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide‐based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Embolism resistance explains mortality and recovery of five subtropical evergreen broadleaf trees to persistent drought

Subtropical evergreen broadleaf forest (SEBF) is experiencing and expected to suffer more frequent and severe drought events. However, how the hydraulic traits directly link to the mortality and recovery of SEBF trees remains unclear. In this study, we conducted a drought-rewatering experiment on tree seedlings of five dominant species to investigate how the hydraulic traits were related to tree mortality and the resistance and recovery of photosynthesis (A) and transpiration (E) under different drought severities. Species with greater embolism resistance (P 50 ) survived longer than those with the weaker P 50 . However, there was no general hydraulic threshold associated with tree mortality, with the lethal hydraulic failure varying from 64% to 93% loss of conductance. Further, the photosynthesis and transpiration of tree species with greater P 50 were more resistant to and recovered faster from drought than those with lower P 50 . Other plant traits could not explain the interspecific variation in tree mortality and drought resistance and recovery. These results highlight the unique importance of embolism resistance in driving carbon and water process under persistent drought across different trees in SEBF. The absence of multiple efficient drought strategies in SEBF seedlings implies the difficulty of natural seedling regeneration under future droughts, which often occurs after destructive disturbances (e.g., extreme drought events and typhoon), suggesting that this biome may be highly vulnerable to co-occurring climate extremes.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Abstract Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high‐resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage. Therefore, insights into the performance of Si solar cells using high‐resistivity wafers at various operating temperatures are of significant interest. In this study, we investigate the temperature‐ and illumination‐dependent performance of Si heterojunction (SHJ) solar cells using a wide range of wafer resistivities (between 3 and 1000 Ω⋅cm). Although a reduction in the passivation quality of the passivating contacts is observed at elevated temperature, the impact on the temperature coefficient of the open‐circuit voltage (TC V oc )—the dominant contributor to the temperature coefficient (TC) of the cell efficiency—is very limited. Their TC V oc are still dominated by the temperature dependence of the effective intrinsic carrier concentration. Furthermore, we also find that the investigated cells are more sensitive to temperature variation at lower illumination intensities. It is noteworthy that the efficiency of the cells fabricated using high‐resistivity wafers is comparable to that of the reference cells at any given temperature, highlighting the potential of using high‐resistivity wafers for solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Production of High-Resistivity Electrical Steel Alloys by Substitution of Si with Al and Cr

Fe-3Si-3Al and Fe-4Si-4Cr (wt%) experimental alloys were processed to assess the electrical resistivity and workability effects of substituting Al and Cr for Si in high-Si electrical steel alloys. The experimental alloys were made by arc melting, and processed by hot rolling and cold rolling to produce strips. Samples were characterized by means of metallography, hardness, workability and resistivity. Results showed that the two alloys could be rolled down to 200 μm thickness (90% hot rolled reduction and 80% cold rolled reduction) without crack formation in the strips. Hardness in the annealed condition and electrical resistivity were 228 HV/74 μΩ·cm and 243 HV/85 μΩ·cm, respectively, for the Fe-3Si-3Al and for Fe-4Si-4Cr alloys. The resistivity measured for Fe-4Si-4Cr was higher than the resistivity reported for the benchmark high-Si alloy, Fe-6.5Si. Both experimental alloys showed improvement on the workability compared to Fe-6.5Si since there was no edge cracking on the cold-rolled strips up to 80% percent reduction, and the hardness was approximately 35% lower.

Electrical steels↗
DOE OSTI2017

Study on Composition, Microstructure and Wear Behavior of Fe-B-C Wear-Resistant Surfacing Alloys

Fe-B-C alloy layers with various microstructures were welded on Q235 steel plates using welding powders/H08Mn2Si and welding wires composite surfacing technology. The relationship existing between the chemical composition, microstructure and wear resistance of the surfacing alloy layers was investigated by scanning electron microscopy, x-ray diffraction, electron backscatter diffraction and wear tests. The results demonstrated that the volume fractions and morphologies of the microstructures in the surfacing alloy layers could be controlled by adjusting the boron and carbon contents in the welding powders, which could further regulate the wear resistance of the surfacing alloy layers. The typical microstructures of the Fe-B-C surfacing alloy layers included dendritic Fe, rod-like Fe{sub 2}B, fishbone-like Fe{sub 2}B and daisy-like Fe{sub 3}(C, B). The wear resistance of the alloy layers with various morphologies differed. The wear resistance order of the different microstructures was: rod-like Fe{sub 2}B > fishbone-like Fe{sub 2}B > daisy-like Fe{sub 3}(C, B) > dendritic Fe. A large number of rod-like Fe{sub 2}B with high microhardness could be obtained at the boron content of 5.70 ~ 5.90 wt.% and the carbon content of 0.50 ~ 0.60wt.%. The highest wear resistance of the Fe-B-C alloy layers reached the value of 24.1 g{sup −1}, which demonstrates the main microscopic cutting wear mechanism of the Fe-B-C alloy layers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Suggestion of an Indicator to Evaluate Material Deposition in Resistance Spot Welding: Weld–Surface Interaction Index

Resistance spot welding (RSW) is still leading joining process in the automotive industry due to the simplicity and speed of the process. On the other hand, galvanized steel sheets provide improvement in corrosion resistance of the auto body. Material deposition has an influence on the corrosion resistance and weld strength; however, in the literature very little effort has been made to identify any weld–surface interaction numerically. In this study, a numerical approach called “Weld–Surface Interaction Index” (I{sub WSI}) has been introduced to investigate the effect of material deposition on the corrosion sensitivity of the welding zone and its periphery. A systematic investigation was carried out to better understand the effects of an electrode cap–galvanized steel sheet interface on the corrosion resistance of spot-welded steel. The chemical composition of DP600 steel sheet and Z-Trode electrode cap was analyzed by using a spectrometer. The specimens were then joined by using same caps up to 1200 welds. SEM–EDS analysis was also performed on the chosen specimens to determine the weight percentages (wt.%) of Fe, Zn and Cu. EDS analysis results and coefficient of variation wt.% of Fe, Zn and Cu were used to compose I{sub WSI} formula. In the proposed formula, wt.% of Zn represented resistivity of the cover to corrosion, while wt.% of Fe represents the vulnerability.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Comparison of the Phase Stability and Corrosion Resistance of the Ni-Based Alloys C-4 and C-276

A one-to-one correspondence is developed between the phase stability and corrosion resistance of the commercial (Ni-Cr-Mo)-based alloys C-276 and C-4. Alloy C-4 is shown to outperform alloy C-276 in acidic oxidizing media and approaches its resistance in acidic reducing media. Both alloys are found to have similar resistance to chloride-induced stress corrosion cracking in the annealed condition with short-range order. The aqueous corrosion resistance of both alloys is found to be improved by long-range order; however, they become highly susceptible to chloride-induced stress corrosion cracking. Alloy C-4 is distinguished by being stable toward precipitation of detrimental intermetallic compounds. However, alloy C-276 is shown to be prone to precipitation of mu phase which degrades its resistance to aqueous corrosion and chloride-induced stress corrosion cracking. It is concluded that the chemical composition of alloy C-4 is tailored to make it more versatile than alloy C-276 in acidic oxidizing media and the results are found to be consistent with the concept of atomic percent factor of each alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2018

StPOTHR1, a NDR1/HIN1-like gene in Solanum tuberosum, enhances resistance against Phytophthora infestans

Highlights: • The expression of StPOTHR1 was positively correlated to the levels of potato resistance to P. infestans. • Suppression of POTHR1 does not compromise R-mediated cell death. • Overexpression of StPOTHR1 enhances resistance against P. infestans via restricting rapid pathogen proliferation. • StPOTHR1 is localized in plasma membrane and undergoes posttranslational modifications. A family of NDR1/HIN1-like (NHL) genes that shows homology to the nonrace-specific disease resistance (NDR1) and the tobacco (Nicotiana tabacum) harpin-induced (HIN1) genes is reported to be involved in defense. However, little information about NHL genes is available for the potato (Solanum tuberosum). Here, we report that the expression of StPOTHR1, a member of the NHL gene family, is associated with resistance in potato against Phytophthora infestans, and is specifically induced in inoculation sites. Overexpression of StPOTHR1 enhances resistance against P. infestans via restricting rapid pathogen proliferation. Further, suppression of StPOTHR1 does not compromise R-mediated cell death. Subcellular localization and posttranscription modifications (PTMs) analysis reveals that StPOTHR1 is localized in plasma membrane (PM) and undergoes multiple PTMs. Moreover, StPOTHR1 interacts with NbMKK5L, a component of the MAP kinase signaling cascade. Taken together, our results suggest that the PM-localized StPOTHR1 contributes to potato immunity against P. infestans and may be associated with the MAP kinase signaling cascade.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

Structure-Guided Identification of Resistance Breaking Antimalarial N -Myristoyltransferase Inhibitors

The attachment of myristate to the N-terminal glycine of certain proteins is largely a co-translational modification catalyzed by N-myristoyltransferase (NMT), and involved in protein membrane-localization. Pathogen NMT is a validated therapeutic target in numerous infectious diseases including malaria. In Plasmodium falciparum , NMT substrates are important in essential processes including parasite gliding motility and host cell invasion. Here, we generated parasites resistant to a particular NMT inhibitor series and show that resistance in an in vitro parasite growth assay is mediated by a single amino acid substitution in the NMT substrate-binding pocket. The basis of resistance was validated and analyzed with a structure-guided approach using crystallography, in combination with enzyme activity, stability, and surface plasmon resonance assays, allowing identification of another inhibitor series unaffected by this substitution. We suggest that resistance studies incorporated early in the drug development process help selection of drug combinations to impede rapid evolution of parasite resistance.

59 BASIC BIOLOGICAL SCIENCES↗