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At least 667 records · Page 37

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NASA NTRS1985

Ion loss processes in the stratosphere

Small ions consisting of aggregates of a few molecules determine th stratospheric electrical parameters such as conductivity, mobility, etc. The small ion density is controlled by the ionizing mechanisms for the production of ions and electrons and the loss processes for these charged particles. Ion production in stratosphere is chiefly due to galactic cosmic rays, and the loss processes due to recombination and attachment. Free electrons do not exist at stratospheric heights. The primary positive ion O2+ and the electrons are converted into complex clusters of positive and negative ions. The equilibrium ion density is governed by the equation of continuity for the production and loss of these ions. In the generalized equation of continuity, the gain or loss of ions due to transport is neglected. When aerosols or particulates are not present in the atmosphere, ions are loss due to ion-ion recombination. In the presence of aerosols, small ions can also be lost by attachment to the aerosols, and thus aerosols are likely to cause perturbations in the stratosphere electrification. A simplified model approach is adopted to study the effect of aerosols on the equilibrium ion density. The results of the analysis for the equatorial station Thumba (8.5 deg N) are presented.

Prasad, B. S. N.↗

NASA NTRS1985

Loss mechanisms in high-efficiency solar cells: Study of material properties and high-efficiency solar-cell performance on material composition: Project tasks

Loss mechanisms in high-efficiency solar cells were discussed. Fundamental limitations and practical solutions were stressed. Present cell efficiency is limited by many recombination sites: emitter, base, contacts, and oxide/silicon interface. Use of polysilicon passivation was suggested. After reduction of these losses, a 25% efficient cell could be built. A floating emitter cell design was shown that had the potential of low recombination losses.

Sah, C. T.↗

NASA NTRS1986

The effect of vertical drift on the equatorial F-region stability

Time-dependent ionospheric model calculations for day-time and night-time solutions are presented. The behavior of the growth rate and ion-electron recombination rate for the Rayleigh-Taylor instability on the F-region bottomside is examined as a function of the vertical eastward electric field-magnetic field strength drift velocity. It is observed that on the bottomside F-layer the growth rate exceeds the ion-electron recombination rate even without vertical drift; however, an eastward electric field-magnetic field strength drift can produce an increase in the growth rate by an order of magnitude. The calculated data are compared with previous research and good correlation is detected. The formation of bubbles from a seeding mechanism is investigated.

Hanson, W. B.↗

NASA NTRS1986

Observations of the 157.7 micron (C II) emission from the galactic H II regions W3 and W51

The 157.7 micron ground-state fine-structure transition of singly ionized carbon was detected from three positions, each in galactic H II region W3 and W51. These findings show that this emission goes beyond the H II regions and the carbon recombination region in each source. In addition these observations establish a lower limit to the luminosity in the 157.7 micron (C II) line of 360 solar luminosity from W3 and 41 solar luminosity from W51. Mechanisms for 157.7 micron-line excitation are discussed, and it is noted that a substantial part of the observed emission originates in the thin carbon recombination line-emitting region which borders on the H II regions and the warm atomic and molecular gas at the surface of neighboring molecular clouds. It is proposed that excitation by electrons present in the diffuse gas surrounding W51 contributes to the extended 157.7 micron (C II) line emission from this region. It was found that the (C II)FIR continuum ratios for W3 and W51 are in agreement with those of other galactic H II regions.

Melnick, G.↗

NASA NTRS1986

Exact solution of three-dimensional transport problems using one-dimensional models

Several parameters of certain three-dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary-value problem. The recombination current, transit time, and open-circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one-dimensional models having the same values of these parameters.

Misiakos, K.↗

NASA NTRS1986

Comments on determination of bandgap narrowing from activation plots

A determination is made of the temperature-dependence of emitter saturation current in bipolar devices which allows the derivation of a value for bandgap narrowing that is in better agreement with other determinations than previous results based on ohmic contact measurements of temperature dependence. The new values were obtained by varying the surface recombination velocity at the emitter surface. This improves accuracy by varying the minority carrier surface recombination velocity at the emitter contacts of otherwise indistinguishable emitters.

Park, J.-S.↗

NASA NTRS1986

The ionization structure of the circumstellar envelope of Alpha Orionis

The physical processes which affect the ionization of the outer circumstellar envelope of Alpha Ori are analyzed and evaluated. The ultraviolet radiation fields of the chromosphere and the interstellar medium dominate the envelope, and the most common forms of all species are neutral atoms and first ions. Hydrogen recombines just outside the chromosphere, where atoms with smaller ionization potential are essentially fully ionized. The heavier ions gradually recombine with increasing distance from the star, until the interstellar radiation field reverses this trend. The electron fraction in the outer envelope is approximately equal to the abundance of all such heavy atoms, i.e., of the order of 0.0001. The analysis is applied to the case of neutral K, whose density in the envelope has been determined by scattering experiments. The theory predicts that the slope of the K I density distribution should decrease from -1.5 to -3.5 in the outer envelope. The mass loss rate of Alpha Ori implied by the K I scattering experiments is 4 x 10 to the -6th solar mass/yr.

Glassgold, A. E.↗

NASA NTRS1987

Pretreatment of Platinum/Tin Oxide-Catalyst

Addition of CO to He pretreatment doubles catalytic activity. In sealed, high-energy, pulsed CO2 laser, CO and O2 form as decomposition products of CO2 in laser discharge zone. Products must be recombined, because oxygen concentration of more than few tenths of percent causes rapid deterioration of power, ending in unstable operation. Promising low-temperature catalyst for combining CO and O2 is platinum on tin oxide. New development increases activity of catalyst so less needed for recombination process.

Hess, Robert V.↗

NASA NTRS1986

Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells

The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic.

Fonash, S. J.↗

NASA NTRS1987

Spacecraft ram glow and surface temperature

Space shuttle glow intensity measurements show large differences when the data from different missions are compared. In particular, on the 41-G mission the space shuttle ram glow was observed to display an unusually low intensity. Subsequent investigation of this measurement and earlier measurements suggest that there was a significant difference in temperature of the glow producing ram surfaces. The highly insulating properties coupled with the high emissivity of the shuttle tile results in surfaces that cool quickly when exposed to deep space on the night side of the orbit. The increased glow intensity is consistent with the hypothesis that the glow is emitted from excited NO2. The excited NO2 is likely formed through three body recombination (OI + NO + M = NO2*) where ramming of OI interacts with weakly surface bound NO. The NO is formed from atmospheric OI and NI which is scavenged by the spacecraft moving through the atmosphere. It is postulated that the colder surfaces retain a thicker layer of NO thereby increasing the probability of the reaction. It has been found from the glow intensity/temperature data that the bond energy of the surface bound precursor, leading to the chemical recombination producing the glow, is approximately 0.14 eV. A thermal analysis of material samples of STS-8 was made and the postulated temperature change of individual material samples prior to the time of glow measurements above respective samples are consistent with the thermal effect on glow found for the orbiter surface.

Swenson, G. R.↗

NASA NTRS1986

Mass and energy balance of the cold Io torus

A new model of the cold Io torus is described. Ions and energy are injected into the system by independent processes so that the mass balance is isolated from the energy balance. The primary source of energy is local ionization and acceleration of hot pickup ions resulting from charge exchange between thermal ions and an extended cloud of Iogenic sulfur and oxygen atoms. The primary energy loss mechanism of the plasma is collisionally excited line emission at optical wavelengths. The primary ion source is radial diffusion inward from the hot torus on a time scale of 140-710 days. The primary ion loss mechanism is a novel two-step enhanced recombination mechanism involving charge exchange between thermal ions and an extended cloud of neutral SO2 molecules, followed by rapid dissociative recombination of the resultant molecular ion. The model provides a self-consistent solution which reconciles a number of diverse observations with known physical processes.

Moreno, M. A.↗

NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗

NASA NTRS1986

Theoretical and experimental considerations for high silicon solar cell performance

This paper reviews ongoing research aimed at the attainment of highly efficient silicon solar cells. The importance of low-recombination highly-doped n(+) and p(+) regions and the manner in which such regions are fabricated are discussed. Theoretical light-trapping considerations are combined with experimental reflectance data to show that high quantum efficiency may be obtained from thin (100-micron) cells. The principal finding of this work is that thin solar cells with conversion efficiencies of over 20 percent may be fabricated if recombination at the front and back metal/silicon interfaces is reduced. Large-area cells (53 sq cm) with an efficiency of 18 percent are reported.

Spitzer, M. B.↗

NASA NTRS1985

Measurement and analysis of solar cell current-voltage characteristics

Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.

Olsen, Larry C.↗

NASA NTRS1986

Noncollisional excitation of low-lying states in gaseous nebulae

Consideration is given to the effects of processes other than electron collisional excitation on the energy level populations of species of C, N, and O. It is found that dielectronic as well as direct-radiative recombination may contribute significantly and in some cases be the major input to populating the low-lying metastable levels. It is concluded that the most pronounced changes occur when there is a large effective recombination coefficient to a level and when T(e) is low. The most dramatic change among the forbidden lines occurs for the O II forbidden lines.

Rubin, Robert H.↗

NASA NTRS1986

Identification of some key parameters limiting the performance of high-efficiency silicon solar cells

This paper presents, for the first time, a detailed sensitivity analysis of key cell parameters on silicon-cell efficiency by incorporating advanced solar cell physics in a sophisticated numerical simulation program. It delineates the true physical barriers to obtaining a high-efficiency silicon solar cell. Specific parameters presently limiting cell efficiency are identified to be the minority carrier lifetime and the recombination velocities at the front and back surfaces. Practical cell efficiencies in the vicinity of 22 percent are estimated to be attainable by using good quality silicon crystal and substantially reducing surface recombination velocities.

Mokashi, Anant R.↗

NASA NTRS1987

Effect of NASA advanced designs on thermal behavior of Ni-H2 cells

As part of an overall effort to advance the technology of nickel-hydrogen batteries for low Earth orbit (LEO) applications, advanced designs for individual pressure vessel (IPV) nickel-hydrogen cells have been conceived. These designs incorporate alternative methods of oxygen recombination which affect the thermal behavior of the cells. The effect of these oxygen recombination methods on the cell temperature profiles is examined.

Gonzalez-Sanabria, Olga D.↗

NASA NTRS1987

Spectral flux from low-density photospheres - Low-temperature results

Previous studies of low-density, hydrogen-dominated, quasi-static photospheres (such as those of Type II supernovae) are extended to effective temperatures Te = 4000-6000 K. These temperatures include those at which hydrogen recombines at the densities investigated, corresponding to scale heights Delta R = (1-100) x 10 to the 14th cm. In addition to presenting results for the emergent spectral flux (required to obtain supernova distances via the Baade method), the validity of some assumptions previously made is demonstrated. It is shown that the level populations of hydrogen are governed solely by a balance between photoionization directly to and recombination directly from the continuum.

Hershkowitz, Stephen↗