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At least 667 records · Page 37

VLA-BATSE observations of an intense solar decimetric and hard X-ray burst

We discuss observations of a multiply impulsive solar burst that was detected simultaneously by the VLA at 20 and 90 cm and by the Burst and Transient Experiment (BATSE) at hard X-ray wavelengths. The flare-associated 20 cm emission consists of two groups of bursts about 4 min apart. Hard X-ray emission above 25 keV was detected during both groups of bursts, while 90 cm bursts occurred only during the second and more intense group. VLA snapshot maps at intervals of 1.7 s reveal that the 20 cm burst originates within a relatively compact source located above the east limb at a height of roughly 1.8 x 10 exp 10 cm. The 90 cm burst is more extended and lies at a height of roughly 2.2 x 10 exp 10 cm. The similarity of the time profiles in the two spectral domains suggests a common injection of energetic electrons, while the time delays are consistent with the travel times of electrons which propagate from the chromosphere to the sites of the coronal radio bursts. We find that the VLA emission is probably the type III or type IV radiation of electrons trapped in large coronal loops, and that plasma radiation, rather than gyrosynchrotron emission, can explain it.

Willson, Robert F.↗

Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride

Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.

2D materials↗

The earth as a radio source: The non-thermal continuum

A weak nonthermal continuum, radiated by the earth from energetic electrons in the outer radiation zone, is studied. It is shown that the frequency spectrum of the continuum radiation consists of two components, a trapped component, which is permanently trapped within the magnetosphere at frequencies below the solar wind plasma frequency, and an escaping component which propagates freely away from the earth at frequencies above the solar wind plasma frequency. Direction finding measurements and measurements of the spatial distribution of intensity for both components indicated that the continuum radiation is generated (1) in a broad region which extends through the morning and early afternoon immediately beyond the plasmapause boundary, and (2) over a broad range of latitudes, including the magnetic equator. Possible mechanisms by which this radiation is generated, including gyro-synchrotron radiation from energetic electrons in the outer radiation zone, are discussed.

Gurnett, D. A.↗

Observation of Relativistic Electron Microbursts in Conjunction with Intense Radiation Belt Whistler-Mode Waves

We present multi-satellite observations of large amplitude radiation belt whistler-mode waves and relativistic electron precipitation. On separate occasions during the Wind petal orbits and STEREO phasing orbits, Wind and STEREO recorded intense whistler-mode waves in the outer nightside equatorial radiation belt with peak-to-peak amplitudes exceeding 300 mV/m. During these intervals of intense wave activity, SAMPEX recorded relativistic electron microbursts in near magnetic conjunction with Wind and STEREO. This evidence of microburst precipitation occurring at the same time and at nearly the same magnetic local time and L-shell with a bursty temporal structure similar to that of the observed large amplitude wave packets suggests a causal connection between the two phenomena. Simulation studies corroborate this idea, showing that nonlinear wave.particle interactions may result in rapid energization and scattering on timescales comparable to those of the impulsive relativistic electron precipitation.

Kersten, K.↗

Influence of Hydroponically Grown Hoyt Soybeans and Radiation Encountered on Mars Missions on the Yield and Quality of Soymilk and Tofu

Soybeans were chosen for hmar and planetary missions due to their nutritive value and ability to produce oil and protein for further food applications. However, soybeans must be processed into foods prior to crew consumption. Wilson et al. (2003) raised questions about (1) the influence of radiation (on germination and functional properties) that the soybeans would be exposed to during bulk storage for a Mars mission, and (2) the impact of using hydroponically grown versus field grown soybeans on the yield and quality of soyfoods. The influence of radiation can be broken down into two components: (A) affect of surface pasteurization to ensure the astronauts safety from food-borne illnesses (a Hazard Analysis Critical Control Point), and (B) affect of the amount of radiation the soybeans receive during a Mars mission. Decreases in the amount of natural antioxidants and free radical formation and oxidation induced changes in the soybean (lipid, protein, etc.) will influence the nutritional value, texture, quality, and safety of soyfoods made from them. The objectives of this project are to (1) evaluate the influence of gamma and electron beam radiation on bulk soybeans (HACCP, CCP) on the microbial load, germination, ease of processing, and quality of soymilk and tofu; (2) provide scale up and mass balance data for Advanced Life Support subsystems including Biomass, Solid Waste Processing, and Water Recovery Systems; and (3) to compare Hoyt field grown to hydroponically grown Hoyt soybeans for soymilk and tofu production. The soybean cultivar Hoyt, a small standing, high protein cultivar that could grow hydroponically in the AIMS facility on Mars) was evaluated for the production of soymilk and tofu. The quality and yield of the soymilk and tofu from hydroponic Hoyt, was compared to Vinton 81 (a soyfood industry standard), field Hoyt, IA 2032LS (lipoxygenase-free), and Proto (high protein and antioxidant potential). Soymilk and tofu were produced using the Japanese method. The soymilk was coagulated with calcium sulfate dihydrate. Soybeans and tofu were evaluated using chemical, microbial, and instrumental sensory methods. The surface radiation of whole dry soybeans using electron beam or gamma rays at 10 or 30 kGy did provide microbial safety for the astronauts. However, these doses caused oxidative changes that resulted in tofu with rancid aroma, darkening of the tofu, lower tofu yields, more solid waste, and loss of the ability of the seeds to germinate. While lower doses may reduce these problems, we lose the ability to insure microbial safety (cross-contamination) of bulk soybeans for the astronauts. Counter measures could include vacuum packaging, radiating under freezing conditions. A No Effect Dose for food quality, below 10 kGy needs to be determined. Better estimates of the radiation that the food will be exposed to need to determined and shared. Appropriate shielding for the food as well as the astronauts needs to be developed. The Hoyt soybean did not provide a high yielding, high quality tofu. A new small scale system for evaluating soybeans was developed using 50 g quantities of soybeans.

Wilson, Lester A.↗

Fast Neutron Irradiation of a Multichannel JFET-Based Optical Encoder

Modern electrical components are susceptible to damage from high levels of radiation and extreme temperatures found near reactors in terrestrial nuclear power plants and in aerospace applications. Radiation-hardened electronics are being developed, largely for the aerospace industry, but they sometimes rely on application-specific, small-batch semiconductor fabrication processes. These processes tend to be prohibitively expensive to develop and maintain outside major industrial facilities or governmental agencies. Recently, commercially available, nonradiation-rated junction-gate field-effect transistors (JFETs) were shown to maintain their functionality at gamma doses exceeding 1 MGy, suggesting that nonrated, commercially available electrical components could be used to develop systems that are tolerant to ionizing radiation. However, gamma ray survival is not indicative of neutron dose survival, and few studies characterize JFETs under neutron irradiation. To address this knowledge gap, a JFET-based analog multiplexer and optical pulsewidth modulation (PWM) encoder was developed and irradiated using a 252 Cf source to 1.6×10 13 n/cm 2 . The multiplexed optical encoder (MOE) system maintained functionality throughout testing and showed little evidence of radiation effects. These results indicate that circuitry tolerant to fast neutron damage can be developed using low-cost, nonradiation-rated, commercially available JFETs, which could provide a lower production cost alternative to specialized semiconductor processes when designing and building electronics better able to survive neutron irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Prompt Injections of Highly Relativistic Electrons Induced by Interplanetary Shocks: A Statistical Study of Van Allen Probes Observations

We conduct a statistical study on the sudden response of outer radiation belt electrons due to interplanetary (IP) shocks during the Van Allen Probes era, i.e., 2012 to 2015. Data from the Relativistic Electron-Proton Telescope instrument on board Van Allen Probes are used to investigate the highly relativistic electron response (E greater than 1.8 MeV) within the first few minutes after shock impact. We investigate the relationship of IP shock parameters, such as Mach number, with the highly relativistic electron response, including spectral properties and radial location of the shock-induced injection. We find that the driving solar wind structure of the shock does not affect occurrence for enhancement events, 25% of IP shocks are associated with prompt energization, and 14% are associated with MeV electron depletion. Parameters that represent IP shock strength are found to correlate best with highest levels of energization, suggesting that shock strength may play a key role in the severity of the enhancements. However, not every shock results in an enhancement, indicating that magnetospheric preconditioning may be required.

Schiller, Q.↗

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗

Radiation hardening design of nuclear powered spacecraft

The design and operation of space systems utilizing nuclear fueled power systems must consider the radiation environment from the earliest stages of their design. A range of nuclear systems are being considered for present and future satellite systems capable of supplying tens of kilowatts to multimegawatt and generating a corresponding range of radiation environments. The effects of these radiations on electronics and materials can be minimized by implementing early design considerations which maximize the design efficiency and minimize the impact on system mass. Space systems design considerations for the radiation environment must include all sources in addition to the self induced gamma ray and neutron radiation. These include the orbital dependent environment from the high energy electron and protons encountered in natural space. The system trades which the designer must consider in the development of space platforms which utilize nuclear reactor power supplies are discussed.

Schmidt, R. E.↗

Forecasting Megaelectron-Volt Electrons Inside Earth's Outer Radiation Belt: PreMevE 2.0 Based on Supervised Machine Learning Algorithms

We present the recent progress in upgrading a predictive model for megaelectron-volt (MeV) electrons inside the Earth's outer Van Allen belt. This updated model, called PreMevE 2.0, provides improved forecasts, particularly at outer L-shells, by adding upstream solar wind speeds to the model's input parameter list that originally includes precipitating electrons observed at low Earth orbits and MeV electron fluxes in situ measured by a geosynchronous satellite. Furthermore, based on several kinds of linear and artificial neural networks algorithms, a list of models was constructed, trained, validated, and tested with 42-month MeV electron observations from Van Allen Probes. Out-of-sample test results from these models show that, with optimized model hyperparameters and input parameter combinations, the top performer from each category of models has the similar capability of making reliable 1-day (2-day) forecasts of 1-MeV electron flux distributions with performance efficiency values ~0.87 (~0.82) averaged over the L-shell range of 2.8–6.6, significantly outperforming the previous version of PreMevE particularly at L-shells > ~4.5. Interestingly, the linear regression model is often the most successful when compared to other models, which suggests the relationship between dynamics of trapped 1-MeV electrons and precipitating electrons is dominated by linear components. Results also show that PreMevE 2.0 can reasonably well predict the onsets of MeV electron events in 2-day forecasts. PreMevE 2.0 is designed to be driven by observations from longstanding space infrastructure to make high-fidelity forecasts for MeV electrons, thus can be an invaluable space weather forecasting tool for the future.

79 ASTRONOMY AND ASTROPHYSICS↗

Scattering by whistler-mode waves during a quiet period perturbed by substorm activity

We study the dynamics of radiation belt electrons during a 10-day quiet period perturbed by substorm activity and preceding a high-speed stream (HSS), aiming at a global description of the radiation belts in L-shell, L in [2, 6], and energy [0.1, 10] MeV. We combine Van Allen Probes observations and Fokker-Planck numerical simulations of pitch-angle diffusion. The Fokker-Planck model uses event-driven pitch angle diffusion coefficients from whistler-mode waves, built from the wave properties and the ambient plasma density measurements from the Van Allen Probes. We first find this event has some similar characteristics to regular quiet times previously studied; a widely extended plasmasphere within which we observe strong and varying whistler-mode waves. These ambient conditions lead to strong pitch-angle scattering, which contributes to the creation of a wide slot region as well as a significant decay of the outer radiation belts, which are observed and qualitatively well simulated. In addition, we find the substorm activity causes short duration (within ± 4h) decay of the plasma density and a lowering amplitude of the whistler-mode waves within the plasmasphere, both causing opposite effects in terms of pitch angle diffusion. This leads to a diminution of pitch-angle diffusion at the time of the main substorm activity. Conversely, whistler-mode waves become enhanced in the time periods between the substorm injections. All effects cumulated, we find an enhancement of pitch angle diffusion by whistler-mode waves above L~4.7 during the 10-day period. This directly relates to the combination of quietness and substorm activity which allows pitch angle diffusing of up to 1 MeV electrons in the outer belt. Relativistic electrons of 1–2 MeV remain trapped in the outer belt, from L~4.7 to L~5.2, forming, in both the observations and the simulations, a distinct pocket of remnant electrons.

79 ASTRONOMY AND ASTROPHYSICS↗

Chemical crystallography by serial femtosecond X-ray diffraction

Abstract Inorganic–organic hybrid materials represent a large share of newly reported structures, owing to their simple synthetic routes and customizable properties 1 . This proliferation has led to a characterization bottleneck: many hybrid materials are obligate microcrystals with low symmetry and severe radiation sensitivity, interfering with the standard techniques of single-crystal X-ray diffraction 2,3 and electron microdiffraction 4–11 . Here we demonstrate small-molecule serial femtosecond X-ray crystallography (smSFX) for the determination of material crystal structures from microcrystals. We subjected microcrystalline suspensions to X-ray free-electron laser radiation 12,13 and obtained thousands of randomly oriented diffraction patterns. We determined unit cells by aggregating spot-finding results into high-resolution powder diffractograms. After indexing the sparse serial patterns by a graph theory approach 14 , the resulting datasets can be solved and refined using standard tools for single-crystal diffraction data 15–17 . We describe the ab initio structure solutions of mithrene (AgSePh) 18–20 , thiorene (AgSPh) and tethrene (AgTePh), of which the latter two were previously unknown structures. In thiorene, we identify a geometric change in the silver–silver bonding network that is linked to its divergent optoelectronic properties 20 . We demonstrate that smSFX can be applied as a general technique for structure determination of beam-sensitive microcrystalline materials at near-ambient temperature and pressure.

36 MATERIALS SCIENCE↗

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗