Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n -type half-Heuslers Hf 0.75–x Ti x Zr 0.25 NiSn 0.99 Sb 0.01
We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf 0.75–x Ti x Zr 0.25 NiSn 0.99 Sb 0.01 , has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf 0.5 Zr 0.25 Ti 0.25 NiSn 0.99 Sb 0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf 0.5 Zr 0.25 Ti 0.25 NiSn 0.99 Sb 0.01 samples are significantly higher than those of the same way prepared Hf 0.75 Zr 0.25 NiSn 0.99 Sb 0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.