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Results for “Monolithic”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Analysis and Monolithic Implementation of Differential Transimpedance Amplifiers
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Performance and Reliability Implications of Two-Dimensional Shading in Monolithic Thin-Film Photovoltaic Modules
Abstract not provided
Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules
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A Monolithic O-Band Coherent Optical Receiver for Energy-Efficient Links
Not Available
Stringing Monolithic Three Terminal III-V Tandems
Tandemdevicesarewellknowntosurpasssinglejunctions.However,thelimitationsofcurrent-matchingisaconcern for changing spectra in terrestrial applications. Three terminal tandem (3T) devices can be more robust to these variations resulting in higher energy yield than single junction devices and two terminal series-connected tandems. We fabricate one-sun 3T tandem devices made of inverted grown III-V tandem (GaInP/t/GaAs) as a prototype of 3T tandems for stringing and measurement demon- strations. We demonstrate 3T tandem measurements that can be used to understand the use of 3T tandems in various constrained configurations. We have demonstrated the improvement of unconstrained 3T tandem cells over 2T series-connected cells as the illumination changes. We present initial results for micro-module with up to 8 3T tandem devices to be strung together.
Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology
Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.
Focusing of hard X-rays with monolithic two-dimensional multilayer Laue lenses: technical challenges and current status
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In situ recombination junction between p-Si and TiO 2 enables high-efficiency monolithic perovskite/Si tandem cells
Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in the cost of solar electricity. Here, we describe a two-terminal perovskite/Si tandem design that increases the Si cell’s output in the simplest possible manner: by placing a perovskite cell directly on top of the Si bottom cell. The advantageous omission of a conventional interlayer eliminates both optical losses and processing steps and is enabled by the low contact resistivity attainable between n-type TiO 2 and Si, established here using atomic layer deposition. We fabricated proof-of-concept perovskite/Si tandems on both homojunction and passivating contact heterojunction Si cells to demonstrate the broad applicability of the interlayer-free concept. Stabilized efficiencies of 22.9 and 24.1% were obtained for the homojunction and passivating contact heterojunction tandems, respectively, which could be readily improved by reducing optical losses elsewhere in the device. This work highlights the potential of emerging perovskite photovoltaics to enable low-cost, high-efficiency tandem devices through straightforward integration with commercially relevant Si solar cells.
Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range
Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.
Stable Photoelectrochemical Hydrogen Evolution for 1000 h at 14% Efficiency in a Monolithic Vapor-fed Device
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Editors' Choice—A Monolithic Photoelectrochemical Device Evolving Hydrogen in Pure Water
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Evaluation of Radiation Heating and Damage for the Design of Second Target Station Monolith Inserts
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Monolithic metallic nanocavities for strong light-matter interaction to quantum-well intersubband excitations.
Abstract not provided.