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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Simulating Thermoelectric Devices Using the MOOSE Framework

Thermoelectric generators (TEG) are devices that generate energy by converting heat into electricity or provide cooling via the Peltier effect. This feature of thermoelectric devices originates from the Seebeck, Peltier, Thomson, and Joule heating effects. TEGs can be applied in energy and thermal management systems such as waste heat recovery and refrigeration, respectively. Thermoelectric device design is influenced by the material selection and the device's geometry operating conditions. Therefore, predicting, verifying, and validating thermoelectric device performance using simulations tools is essential to deploying thermoelectric devices in industry. The Multiphysics Object-Oriented Simulation Environment (MOOSE) Framework is an open-source simulation tool capable of modeling simple to complex systems. In this work, we demonstrate MOOSE's thermoelectric device modeling capabilities by simulating a unicouple, module, and exhaust gas recovery system. The Seebeck, Peltier, Thomson, and Joule heating physics are implemented into MOOSE. The MOOSE thermoelectric physics were thoroughly verified and validated using published COMSOL® results and experimental data. In addition, thermoelectric modules were integrated into an exhaust gas recovery system using the MOOSE MultiApp function as a demonstration of the model's ability. The verification and validation results and exhaust gas heat recovery system showcases MOOSE's capability to model thermoelectric devices and integrate these devices into practical energy systems.

42 - ENGINEERING↗
DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

14 SOLAR ENERGY↗
DOE OSTI2021

Highly efficient photoelectric effect in halide perovskites for regenerative electron sources

Electron sources are a critical component in a wide range of applications such as electron-beam accelerator facilities, photomultipliers, and image intensifiers for night vision. We report efficient, regenerative and low-cost electron sources based on solution-processed halide perovskites thin films when they are excited with light with energy equal to or above their bandgap. We measure a quantum efficiency up to 2.2% and a lifetime of more than 25 h. Importantly, even after degradation, the electron emission can be completely regenerated to its maximum efficiency by deposition of a monolayer of Cs. The electron emission from halide perovskites can be tuned over the visible and ultraviolet spectrum, and operates at vacuum levels with pressures at least two-orders higher than in state-of-the-art semiconductor electron sources.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Material Selection and Heat Transfer Model for PTUHS Device

The Path to Ultimate Heat Sink Device (PTUHS) is a passive safety system that utilizes a radiative heat transfer valve to control the rate at which heat is removed from a nuclear reactor pressure vessel (RPV) and dispersed into surrounding soil. The material selection for the PTUHS device is investigated, where the thermophysical properties are either maximized or minimized bases on what section of the PTUHS that material is being used for. Final recommendations of material choice are then presented. The heat transfer model of the PTUHS device is solved in ABAQUS, where a normal operating conditions and SCRAM conditions are solved. These temperature maps and heat flux of the system show the system's ability, where minimal heat is lost during normal operating conditions and system failure in a SCRAM scenario due to temperatures that were reached.

42 - ENGINEERING↗
DOE OSTI2025

Electrically‐Driven Metal‐Insulator Transitions Emerging from Localizing Current Density and Temperature

Negative differential resistance (NDR) is a key electronic response enabling two‐terminal artificial neurons that can be achieved through different physical phenomena, including phase‐homogeneous current density and temperature (electro‐thermal) localizations and spatially‐localized metal‐insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically‐biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase‐homogeneous electro‐thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO 2 . These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically‐induced electro‐thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically‐biased MIT materials.

artificial neuron↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2022

Microstructural Transitions during Powder Metallurgical Processing of Solute Stabilized Nanostructured Tungsten Alloys

Exploiting grain boundary engineering in the design of alloys for extreme environments provides a promising pathway for enhancing performance relative to coarse-grained counterparts. Due to its attractive properties as a plasma facing material for fusion devices, tungsten presents an opportunity to exploit this approach in addressing the significant materials challenges imposed by the fusion environment. Here, we employ a ternary alloy design approach for stabilizing W against recrystallization and grain growth while simultaneously enhancing its manufacturability through powder metallurgical processing. Mechanical alloying and grain refinement in W-10 at.% Ti-(10,20) at.% Cr alloys are accomplished through high-energy ball milling with transitions in the microstructure mapped as a function of milling time. We demonstrate the multi-modal nature of the resulting nanocrystalline grain structure and its stability up to 1300 °C with the coarser grain size population correlated to transitions in crystallographic texture that result from the preferred slip systems in BCC W. Field-assisted sintering is employed to consolidate the alloy powders into bulk samples, which, due to the deliberately designed compositional features, are shown to retain ultrafine grain structures despite the presence of minor carbides formed during sintering due to carbon impurities in the ball-milled powders.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optical sensor employing a refractive index engineered metal oxide material

An optical sensor device includes an optical waveguide portion having a core, the core having a first refractive index, and a functional material layer coupled to the optical fiber portion, the functional material layer being made of a metal oxide material, the functional material layer being structured to have a second refractive index, the second refractive index being less than the first refractive index. The functional material layer may be a nanostructure material comprising the metal oxide material with a plurality of holes or voids formed therein such that the functional material layer is caused to have the second refractive index.

Chen, Peng↗
DOE OSTI2022

In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas.

Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Material Plasma Exposure eXperiment (MPEX) High Heat Flux Bellows for Component Alignment in High Microwave Environment

The Material Plasma Exposure eXperiment (MPEX) device is a linear plasma device developed to perform plasma material interaction experiments under the conditions prototypic of a fusion reactor divertor. MPEX has multiple systems that must be precisely aligned to the plasma axis, including an electron cyclotron heating system that emits up to 400 kW of microwave power into the vacuum vessel. Five distinct systems require precise alignment on the MPEX device, thus requiring four bellows, all of which are adjacent to the plasma at a relatively high heat flux of approximately 47 kW/m2 and microwave power regions. The MPEX high heat flux bellows (HHFB) is designed to deliver 6 degrees of freedom positioning. The HHFB includes titanium–zirconium–molybdenum (TZM) inserts that are brazed into a Glidcop AL-15 body using a high-temperature braze alloy, thus blocking direct line of sight to an edge-welded bellows from the plasma and microwave screen to block microwaves from the bellows. Further, a custom ConFlat knife edge is machined into the Glidcop AL-15, so the vacuum flanges do not need a braze or weld joint on the vacuum interface. Fingerstock or copper mesh is used to restrict microwave power from entering the interstitial space between the water-cooled Glidcop AL-15 body and edge-welded bellows. Glidcop AL-15 was selected as the material of choice for the water-cooled body because it can maintain mechanical integrity at elevated temperatures, and it also allows for a high-temperature braze. TZM was selected for its machinability and compatibility with vacuum and plasma requirements. A test article is also being considered for a similarly shaped component, the MPEX limiter, that will demonstrate the integrity of the braze joint under high thermal load. Results from this testing will be extrapolated to deduce the lifetime and integrity of the HHFB design.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Altered Stability and Degradation Pathway of CH 3 NH 3 PbI 3 in Contact with Metal Oxide

Degradation in CH 3 NH 3 PbI 3 (MAPbI 3 ), when in contact with commonly used metal oxide transport layer materials in optoelectronic devices, is explored experimentally and theoretically. On the basis of the decomposition temperature, the interfacial stability decreases in the following order: MAPbI 3 + TiO 2 ~ MAPbI 3 alone > MAPbI 3 + SnO 2 > MAPbI 3 + NiO, consistent with thermodynamic data. When MAPbI 3 contacts NiO or SnO 2 , experimental results unequivocally show interfacial decomposition occurs at a lower temperature than bulk decomposition and produces different degradation products. Density functional theory calculations reveal an altered reaction pathway on oxide surfaces and elucidate the difference between NiO and TiO 2 . Furthermore, these results pinpoint the importance of understanding the interaction between halide perovskite and other materials used in a device to achieve intrinsically stable devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2017

Design of Multifunctional Materials: Chalcogenides and Chalcopyrites

There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.

Singh, N. B.↗
DOE OSTI2020

Luminescence Quenching via Deep Defect States: A Recombination Pathway via Oxygen Vacancies in Ce-Doped YAG

Luminescence quenching via nonradiative recombination channels limits the efficiency of optical materials such as phosphors and scintillators and therefore has implications for conversion efficiency and device lifetimes. In materials such as Ce-doped yttrium aluminum garnet (YAG:Ce), quenching shows strong dependence on both temperature and activator concentration, limiting the fabrication of high-intensity white-light emitting diodes with high operating temperatures. Here, we reveal by means of first-principles calculations an efficient recombination mechanism in YAG:Ce that involves oxygen vacancies and gives rise to thermally activated concentration quenching. We demonstrate that the key requirements for this mechanism to be active are localized states with strong electron-phonon coupling. These conditions are commonly found for intrinsic defects such as anion vacancies in wide band gap materials. The present findings are therefore relevant to a broad class of optical materials and shine light on thermal quenching mechanisms in general.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Phenethylammonium Functionalization Enhances Near-Surface Carrier Diffusion in Hybrid Perovskites

Understanding semiconductor surface properties and manipulating them chemically are critical for improving their performance in optoelectronic devices. Hybrid halide perovskites have emerged as an exciting class of highly efficient solar materials; however, their device performance could be limited by undesirable surface properties that impede carrier transport and induce recombination. Here we show that surface functionalization of methylammonium lead iodide (MAPbI 3 ) perovskite with phenethylammonium iodide (PEAI), a commonly employed spacer cation in two-dimensional perovskites, can enhance carrier diffusion in the near-surface regions and reduce defect density by more than one order of magnitude. Using transient transmission and reflection microscopy, we selectively imaged the transport of the carriers near the (001) surface and the bulk carriers in single-crystal MAPbI 3 microplates. The surface functionalization increases the diffusion coefficient of the carriers in a 40-nm subsurface region from ~ 0.6 cm 2 s -1 to ~ 1 cm 2 s -1 , similar to the value for bulk carriers. These results suggest the PEA ligands are effective in suppressing surface defect and phonon scattering and shed light on the mechanisms for enhancing photophysical properties and improving solar cell efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Machine Learning of Plasma Science for Next Generation Microelectronics (Project Final Report)

Low temperature plasmas (LTPs) are an enabling technology behind reducing device dimensions and the continuation of Moore’s Law. It is estimated that 40-45% of all process steps necessary to manufacture semiconductor devices involve LTPs. However, challenges in plasma process design and continuous incorporation of novel materials for new device architectures are pushing the limits of what is possible with current plasma technology. For example, creating higher aspect ratio structures and etching features at the atomic scale both require finer control of the ion energy/velocity at wafer surfaces. To support these types of future innovations in the plasma processing systems that Sandia and the DOE rely upon, we have developed novel diagnostics, simulations, and machine learning capabilities to discover, characterize, and predict plasma phenomena affecting the ion energy/velocity distribution function (IEDF). These efforts also supported research program development and external collaboration with industry and academia through Sandia’s Plasma Research Facility (PRF). This report will focus on the following topics and accomplishments of this three year LDRD project, briefly summarized.

42 ENGINEERING↗
DOE OSTI2025

Properties of Electronic Materials

This final technical report summarizes the research conducted under DOE Grant DE-SC0002623, "Properties of Electronic Materials," led by Principal Investigator Shengbai Zhang at Rensselaer Polytechnic Institute. Over the 16-year period, the project employed first-principles computational methods to investigate the structural, electronic, and dynamic properties of a wide range of electronic materials, with applications in energy technologies, optoelectronics, and data storage. Key areas included topological insulators, phase-change materials, graphene and two-dimensional systems, perovskites for photovoltaics, defect engineering in semiconductors, kagome lattices, and ultrafast carrier dynamics. The research resulted in 115 peer-reviewed publications, advancing fundamental understanding of material behaviors at the atomic scale and contributing to innovations in renewable energy, memory devices, and quantum materials. Findings have implications for improving energy efficiency, developing lead-free solar cells, and enabling high-speed data processing. The work has trained numerous graduate students and postdocs, fostering the next generation of computational materials scientists. The original goals were to develop theoretical models and computational tools to predict and optimize electronic properties of materials for energy applications. All objectives were accomplished, with no major departures from planned methodologies. Challenges in computational scaling were addressed through access to high-performance computing resources.

36 MATERIALS SCIENCE↗