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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Power controller uses digital techniques to vary duty ratio of switching-type power regulators. Duty ratio is adjusted by comparing error signal with ramp voltage signal. As compared to previously-used switching regulators, controller uses fewer components and no magnetics and is readily adaptable to thick-film technology.
Radiographic inspection of welds in walls of nonmagnetic ducts made easy by new film holder. X-Ray film inside duct held by interior and exterior magnets. Tether used to move holder and to retrieve it from inside duct.
The high Tc Y1Ba2Cu3O(7-x) ceramic materials, initially developed in 1987, are now being extensively investigated for a variety of engineering applications. The superconductor applications which are presently identified as of most interest to NASA-LaRC are low-noise, low thermal conductivity grounding links; large-area linear Meissner-effect bearings; and sensitive, low-noise sensors and leads. Devices designed for these applications require the development of a number of processing and fabrication technologies. Included among the technologies most specific to the present needs are tapecasting, melt texturing, magnetic field grain alignment, superconductor/polymer composite fabrication, thin film MOD (metal-organic decomposition) processing, screen printing of thick films, and photolithography of thin films. The overall objective of the program was to establish a high Tc superconductivity laboratory capability at NASA-LaRC and demonstrate this capability by fabricating superconducting 123 material via bulk and thin film processes. Specific objectives include: order equipment and set up laboratory; prepare 1 kg batches of 123 material via oxide raw material; construct tapecaster and tapecaster 123 material; fabricate 123 grounding link; fabricate 123 composite for Meissner linear bearing; develop 123 thin film processes (nitrates, acetates); establish Tc and Jc measurement capability; and set up a commercial use of space program in superconductivity at LaRC. In general, most of the objectives of the program were met. Finally, efforts to implement a commercial use of space program in superconductivity at LaRC were completed and at least two industrial companies have indicated their interest in participating.
Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.
Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antiferromagnetic, and ferromagnetic phases of a thin film of the topological material MnBi 2 Te 4 . In each magnetic phase we extract a charge carrier phase coherence length of about 100 nm. The conductance magnetofingerprint is repeatable when sweeping applied magnetic field within one magnetic phase, but changes when the applied magnetic field crosses the antiferromagnetic/canted antiferromagnetic magnetic phase boundary. Surprisingly, in the antiferromagnetic and canted antiferromagnetic phase, but not in the ferromagnetic phase, the magnetofingerprint depends on the direction of the field sweep. Finally, to explain these observations, we suggest that conductance fluctuation measurements are sensitive to the motion and nucleation of magnetic domain walls in MnBi 2 Te 4 .
Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.
Rare-Earth manganites and cobalites with the perovskite structure have been a subject of great recent interest because their electrical resistance changes significantly when a magnetic field is applied...we have studied the Hall effect in thin film La(sub 0.5)Ca(sub 0.5)CoO(sub 3) material and have obtained convincing evidence fo the so called anomalous Hall effect, typical for magnetic metals...Our results suggest that near the ferromagnetic ordering temperature, the dominant electron scattering mechanism is the spin fluctuation.
Here, we demonstrate a pump-probe strobe light spectroscopy for sensitive detection of magneto-optical dynamics in the context of hybrid magnonics. The technique uses a combinatorial microwave-optical pump-probe scheme, leveraging both the high-energy resolution of microwaves and high-efficiency detection using optical photons. In contrast with conventional stroboscopy using continuous-wave light, we apply microwave and optical pulses with varying pulse widths, and demonstrate magneto-optical detection of magnetization dynamics in Y 3 Fe 5 O 12 films. The detected magneto-optical signals depend strongly on the characteristics of both the microwave and the optical pulses, as well as their relative time delays. We show that good magneto-optical sensitivity and coherent stroboscopic character are maintained, even at a microwave pump pulse of 1.5 ns and an optical probe pulse of 80 ps, under a 7 MHz clock rate, corresponding to a pump-probe footprint of approximately 1% in one detection cycle. Our results show that time-dependent strobe light measurement of magnetization dynamics can be achieved in the gigahertz frequency range under a pump-probe detection scheme.
Altermagnets are a newly identified family of collinear antiferromagnets with a momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Néel transition temperature of around 700 K. Molecular beam epitaxy is used to synthesize CrSb (0001) thin films with thicknesses ranging from 10 to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a bulk-type, 3D momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the ∼10 nm thin film limit at room temperature.
The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties, such as valence, spin, and orbital degrees of freedom, as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and can be subsequently erased and returned to the pristine state via annealing. We find that this high level of continuous control is made possible by targeting magnetic metastability in the ultrahigh-conductivity, nonmagnetic layered oxide PdCoO 2 where local lattice distortions generated by helium implantation induce the emergence of a net moment on the surrounding transition metal octahedral sites. These highly localized moments communicate through the itinerant metal states, which trigger the onset of percolated long-range ferromagnetism. The ability to continuously tune competing interactions enables tailoring precise magnetic and magnetotransport responses in an ultrahigh-conductivity film and will be critical to applications across spintronics.
The Final Technical Report describes a multi‑institution effort to develop programmable molecular qubits as precision quantum sensors for probing quantum materials. The team created chemically tunable qubits with optical addressability and practical coherence, integrated them into thin films and frameworks while preserving functionality, and established new magnetic and electric sensing methods suited to two‑dimensional magnets, ferroelectrics, and multiferroics. They also built computational models and spectroscopic tools that connect molecular design to material behavior, enabling access to quantum phenomena that previously could not be measured. The project produced more than 40 publications and trained a large cohort of graduate students and postdocs, strengthening the workforce and infrastructure needed for DOE's quantum information science mission.
The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through the manipulation of the strong spin polarized transport. Here, we report that the transport processes that rely on strong spin-momentum locking in the topological insulator Bi 2 Se 3 are completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, Co 7 Se 8 . Bi 2 Se 3 –Co 7 Se 8 –Bi 2 Se 3 trilayer heterostructures were grown using molecular beam epitaxy, where magnetotransport measurements revealed a substantial suppression of the weak antilocalization effect for Co 7 Se 8 at thicknesses as thin as a monolayer, indicating a strong dephasing mechanism. Bi 2- x Co x Se 3 films, in which Co is in a non-magnetic 3 + state, show weak antilocalization that survives to higher than x = 0.4, which, in comparison with the heterostructures, suggests that the unordered moments of Co 2+ act as a far stronger dephasing element. This work highlights several important points regarding coherent transport processes involving spin-momentum locking in topological insulator interfaces and how magnetic materials can be integrated with topological materials to realize both exotic phases and novel device functionality.
Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.
Abstract A supercurrent flowing in a superconductor meets no resistance. Yet an electric field may still be established within the superconductor in the presence of dissipative processes, such as vortex motion. Here we report the observation of a transverse voltage drop in superconducting β- Bi 2 Pd thin films. Unlike the Hall effect in general or in other superconductors, the sign of the observed transverse voltage does not depend on the external magnetic field. Instead, it is dictated by the broken inversion symmetry on the film interfaces. This anomalous transverse voltage, or transverse resistance, is indicative of a chirality that likely resonates with the topological surface states reported in β- Bi 2 Pd.
The relationship between proximity-induced magnetism (PIM) at the heavy metal/ferromagnet interface and spin-transport across such interfaces has generated significant debate. To investigate the link between the two, element specific x-ray magnetic circular dichroism and ferromagnetic resonance measurements were made on the same CoFe/Au/Pt and NiFe/Au/Pt thin film samples with varying Au thickness, with complementary SIMS analysis, which shows evidence of Ni diffusion from NiFe into the Pt. An approximately linear relationship is observed between the magnitude of Pt PIM and magnitude of damping enhancement in both systems. The results demonstrate that electronic hybridization of the heavy metal and ferromagnet is required for a full understanding of damping enhancement and interfacial spintransport for spintronic devices.
Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO 3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO 3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.
The number of atomic layers confined in a two-dimensional structure is crucial for the electronic and magnetic properties. Single-layer and bilayer J eff = 1/2 square lattices are well-known examples where the presence of the extra layer turns the XY anisotropy to the c-axis anisotropy. We report on experimental realization of a hybrid SrIrO 3 /SrTiO 3 superlattice that integrates monolayer and bilayer square lattices in one layered structure. By synchrotron x-ray diffraction, resonant x-ray magnetic scattering, magnetization, and resistivity measurements, we found that the hybrid superlattice exhibits properties that are distinct from both the single-layer and bilayer systems and cannot be explained by a simple addition of them. In particular, the entire hybrid superlattice orders simultaneously through a single antiferromagnetic transition at temperatures similar to the bilayer system but with all the J eff = 1/2 moments mainly pointing in the ab plane similar to the single-layer system. The results show that bringing monolayer and bilayer with orthogonal properties in proximity to each other in a hybrid superlattice structure is a powerful way to stabilize a unique state not obtainable in a uniform structure.
The EIC will make use of the existing RHIC storage rings with their superconducting (SC) magnet arcs. A stain-less-steel beam screen with co-laminated copper and a thin amorphous carbon (aC) film on the inner surface will be installed in the beam pipe of the SC magnets. The copper will reduce the beam-induced resistive-wall (RW) heating from operation with the higher intensity EIC beams, that if not addressed would make the magnets quench. Limiting the RW heating is also important to achieve an adequately low vacuum level. The aC coating will reduce secondary electron yield which could also cause heating and limit in-tensity. Among all the RHIC SC magnets, the arc dipoles present the biggest challenge to the design and installation of beam screens. The arc dipoles, which make up for 78% (2.5 km) length of all SC magnets in RHIC, expect the larg-est RW heating due to their smallest aperture. These mag-nets are also the longest (9.45 m each), thus experiencing the largest temperature rise over their length, and have a large sagitta (48.5 mm) that increases the difficulty to in-stall the beam screen in place. This paper presents a de-tailed thermal analysis of the magnet-screen system.