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At least 667 records · Page 37

All sources NASA NTRS DOE OSTI

DOE OSTI2016

Growth rate effects on the formation of dislocation loops around deep helium bubbles in Tungsten

Here, the growth process of spherical helium bubbles located 6 nm below a (100) surface is studied using molecular dynamics and parallel replica dynamics simulations, over growth rates from 10 6 to 10 12 helium atoms per second. Slower growth rates lead to a release of pressure and lower helium content as compared with fast growth cases. In addition, at slower growth rates, helium bubbles are not decorated by multiple dislocation loops, as these tend to merge or emit given sufficient time. At faster rates, dislocation loops nucleate faster than they can emit, leading to a more complicated dislocation structure around the bubble.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2017

Local Variability of the Peierls Barrier of Screw Dislocations in Ta-10W.

It is well know that the addition of substitutional elements changes the mechanical behavior of metals, a effect referred to solid solution hardening. For body-centered-cubic (BCC) metals, screw dislocation play a key role in the mechanical properties. Here the detailed modification of the Peierls barrier for screw dislocation motion in Ta with W substitutional atoms is computing using density functional theory (DFT). A reduced order model (ROM) of the influence of W substitution on the Peierls barrier is developed. The mean field change in the Peierls barrier for a Ta10W alloy is determined and shown to be larger than anticipated based on simple elasticity considerations. The ROM could be used in future calculations to determine the local variability of the Peierls barrier and the resultant influence on the motion of screw dislocation in this alloy.

42 ENGINEERING↗

DOE OSTI2024

Irradiation creep model for α-Fe: Dislocation climb in the presence of stress fields (Final Report)

Irradiation creep is known to be an important process for structural materials in nuclear environments, potentially leading to creep failure at temperatures where thermal creep is generally negligible. While there is a great deal of data for irradiation creep in steels and zirconium alloys in light water reactor conditions, much less is known for first wall materials under fusion energy conditions. Lacking suitable fusion neutron sources for detailed experimentation, modeling, and simulation can help bridge the dose-rate and spectral-effects gap and produce quantifiable expectations for creep deformation of first wall materials under standard fusion conditions. In this work, we present a comprehensive model for irradiation creep created from merging a crystal plasticity representation of the dislocation microstructure and a defect evolution simulator that accounts for the entire cluster dimensionality space. Both approaches are linked by way of a climb velocity that captures dislocation-biased defect absorption and a dislocation strengthening term that reflects the accumulation of defect clusters in the system. We carry out our study in Fe under first wall fusion reactor conditions, characterized by a fusion neutron spectrum at temperatures between 300 and 800°K.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Propagation of misfit dislocations from buffer/Si interface into Si

Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Chapter 21. Atomic-Level Dislocation Dynamics in Irradiated Metals

Primary damage and microstructure evolution in structural nuclear materials operating under conditions of a high flux of energetic atomic particles and high temperature and stress lead to the formation of a high concentration, non-homogeneous distribution of defect clusters in the form of dislocation loops, voids, gas-filled bubbles and radiation-induced precipitates of nanometer scale. They cause changes in many material properties. Being obstacles to dislocation glide, they strongly affect the mechanical properties, with an increase in yield and flow stresses and a reduction in ductility. Atomic-scale computer simulations can provide details of how these effects are influenced by the obstacle structure, applied stress, strain rate and temperature. Processes such as obstacle cutting, transformation, absorption and drag are observed. Some recent results for body-centered and face-centered cubic metals are described in this review and, where appropriate, comparisons are drawn with predictions based on the elasticity theory of crystal defects. Perspectives on how to use this information at higher scales and in particular in mesoscale, dislocation dynamics simulations are also discussed.

Osetskiy, Yury N.↗

DOE OSTI2024

Stress field and interaction forces between dislocations and precipitate distributions

A computational method is developed for calculation of the stress field and interaction forces between dislocations and precipitates of arbitrary shape and distribution. The internal stress generated by precipitates due to coherency strain is implemented within the discrete dislocation dynamics (DDD) framework. The s-version finite element method (s-FEM), which models a precipitate of arbitrary shape using a local mesh is used to calculate coherency stress fields. The method facilitates meshing precipitate volumes of arbitrary geometry, and multiple local meshes can be superimposed at various positions of the global mesh. Accuracy and convergence conditions of the method are established. For a single precipiate, the method is shown to be 3.5 times faster than a standard FEM calculation for the same accuracy, and the gain in speed increases with the number of precipitates. The CRSS of spherical precipitates is found to be higher than disk-shaped precipitates of the same volume fraction.

42 ENGINEERING↗

DOE OSTI2011

Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

36 MATERIALS SCIENCE↗

DOE OSTI2022

Simulation of the Impact of Point Defects and Edge Dislocations on X-Ray Diffraction in Hexagonal (Ni,Co) 1+2 x Ti 1– x O 3 Thin Films

In this work, a computer code for simulating high-resolution X-ray diffraction (XRD) data from disordered crystals with arbitrary spatial composition and local lattice parameters is developed. Simulated patterns are compared with the experimental data collected on a single phase, highly crystalline (Ni 0.42 Co 0.58 ) 2.22 Ti 0.39 O 3 solid-solution thin film exhibiting a large number of subsidiary minima. As a case study, the edge dislocations in hexagonal (Ni,Co) 3 O 3 thin films with Burgers vector parallel and perpendicular to the a-axis and c-axis, respectively, are modeled. No peak profiles are assumed and thus issues related to profile fitting are avoided. Both macroscopic features, such as film thickness, and atomic-scale structure, such as dislocations, are simultaneously modeled. Simulations are run on a desktop machine. Commonly applied database-based phase identification routines can result in wrong phase identification, unless intensities are properly modeled. Modeling tools of diffractometer manufacturers are compared with the present approach. An example of how simulated reciprocal lattice patterns can be used to choose relevant measurement geometries in defected thin films is given.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2019

On the Relationship Between Dislocation Creep Strength and Microstructure of a Solid-Solution-Strengthened Ni-Base Superalloy

It is shown that the dislocation creep strength of a solid-solution-strengthened Ni-base superalloy is critically dependent upon the cooling rate from the annealing temperature. This behavior is correlated with the effect of cooling rate on the morphology of M{sub 23}C{sub 6}-type carbide which precipitates at grain boundaries during cooling. Experiment shows that the creep strength is enhanced by rapid cooling which results in discrete carbide particles with irregular shape following a zigzag path along the grain boundaries. However, the creep strength is degraded as the morphology is changed into lamellar type by a discontinuous grain boundary reaction which occurs during slower cooling rates. Due to the transition from the discrete particle into the lamellar morphology, plastic deformation becomes more localized alongside the grain boundaries which accelerates the creep rate leading to premature intergranular failure. On the other hand, it is also shown that the stacking fault energy of the alloy increases with temperature which can allow dislocations to rearrange themselves into subgrain structure with relative ease during steady-state creep.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Measuring Depth-dependent Dislocation Densities and Elastic Strains in an Indented Ni-based Superalloy

The indentation-induced elastic-plastic zone in an IN 740 Ni-based superalloy was studied by three-dimensional (3-D) x-ray microdiffraction and electron back scattering diffraction (EBSD). Large lattice reorientations and the formation of geometrically necessary dislocations are observed in the area with a radius of {approx}75 {mu}m. A residual compression zone is found close to the indent edge. An elastic-plastic transition is observed at {approx}20 {mu}m from the indent edge. Depth dependent dislocation densities are determined at different distances from the indent edge.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Temperature and dose effects on dislocation loops in self-ion irradiated high-purity iron

Body-centered cubic (BCC) Fe-based alloys are promising candidate materials for advanced nuclear reactors. However, a detailed understanding of irradiation induced dislocation loop microstructure development remains unresolved. It is a widespread belief that 〈001〉 loops become increasingly favorable over ½〈111〉 loops as irradiation temperature rises above ∼300 C. Unfortunately, the temperature effects on 〈001〉 loop have been primarily examined in in-situ irradiation on TEM thin foils but poorly explored on bulk Fe due to exceedingly limited experimental studies on bulk specimens, raising concerns about the potential influence of TEM thin foil artifacts on observed results. Here, in this study, we conducted experiments on ultra-high purity BCC Fe specimens irradiated with 6.7–8 MeV Fe ions over a wide temperature range on bulk samples. We investigated the effects of temperature (T irr = 250–500 °C), dose rate (10⁻⁵ to 10⁻³ dpa/s), and dose (0.35 to 3.5 dpa) on the formation and evolution of 〈001〉 and ½〈111〉 loops as well as cavity (void) formation. Post-irradiation Burgers vector analysis via g•b method on dislocation segments and loops revealed that 〈001〉 loop fraction does not show a monotonic positive correlation with irradiation temperature. Combined with previous and current theoretical as well as experimental findings, we explore the temperature effects on all existing models of 〈001〉 loop formation. We conclude that the prevailing reports regarding the dominance of 〈001〉 loops in Fe at elevated temperatures are mainly attributable to the loss of glissile ½〈111〉 clusters in TEM thin foil experiments.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Informed unsupervised machine learning analysis of dislocation microstructure from high-resolution differential aperture X-ray structural microscopy data

This study leverages high-resolution differential-aperture X-ray structural microscopy (DAXM) to probe the local dislocation structure in deformed 304L-stainless steel at small strain, by measuring the lattice rotation and deviatoric elastic strain with a sub-micron resolution. For a single grain in a polycrystalline specimen, the measured lattice rotation field over the measured volume exhibited a multimodal distribution while the deviatoric elastic strain showed a single-mode distribution. An unsupervised Cauchy mixture machine learning model was developed to resolve the multimodal distribution of the lattice rotation. By mapping the lattice rotation data associated with each Cauchy peak in the model back onto the measured volume, we identify contiguous regions of the crystal rotated near the average values corresponding to the peaks of the overall rotation distribution. These regions represent the grain subdivision in the microstructure. Finally, the dislocation density tensor was also computed and its norm was laid over the rotation field to detect the subgrain boundaries. This step provided a validation of the Cauchy mixture model for the analysis of the lattice rotation distribution. The current study highlights the integration of advanced X-ray microscopy techniques with data-driven analysis methods to uncover detailed microstructure scales in deformed crystals.

Machine learning; Lattice rotation; High-energy X-↗

DOE OSTI2021

On the missing magnetic flux and topological effects of a screw dislocation on a charged particle in an inhomogeneous magnetic field

Highlights: • Aharonov–Bohm-type effect associated with the missing magnetic flux. • Persistent currents associated with the missing magnetic flux. • Aharonov–Bohm-type effect associated with the screw dislocation topology. We study the interaction of an electron/hole with inhomogeneous magnetic field in the presence of a screw dislocation. We consider the internal structure of the defect, i.e., we consider the core that gives rise to a finite size to the defect. In addition, we assume that this core determines a forbidden region for the electron/hole. Then, we solve the Schrödinger equation and show that an Aharonov–Bohm-type effect arises from the influence of the topological defect and the missing magnetic flux on the eigenvalues of energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Insights into the soft brittle-to-ductile transition from discrete dislocation dynamics

The Brittle-to-ductile transition (BDT) in body centered cubic metals exhibits a soft transition wherein the fracture toughness gradually rises to before the onset of ductility. The resultant brittle-to-ductile transition temperature can be described with an Arrhenius relationship whose activation energy is related to plasticity in the material. To provide further insight into the nature of the BDTT, in this work we utilized a discrete dislo- cation dynamics model with a crack to simulate the BDT and how it depends on the thermally activated nature of plasticity. The interrelationship between the BDT activation energy and the dislocation mobility parameters were determined via the calculation of first order sensitivity coefficients. This analysis allows us to demonstrate that the activation energy for the BDT is directly related to the activation energy for plasticity through an effective stress that defines this relationship. This effective stress physically is the average stress on the dislocations that move out of the crack. Lastly, we are able to show that this effective stress is dictated by the low temperature fracture toughness or cleave energy of the material and the source position, the latter of which can be affected by processing. Collectively, these results provide new insight into what controls the thermal activation of the BDT and what are the important parameters to control it.

36 MATERIALS SCIENCE↗

DOE OSTI2024

A FFT-based mesoscale continuum dislocation mechanics with defect energy: Applications to composites and polycrystals

A crystal plasticity elastoviscoplastic FFT (fast Fourier transform) formulation with a mesoscale continuum field dislocation mechanics model is presented, which incorporates a defect energy density that depends on GND densities and an associated material length scale. This allows to thermodynamically derive internal length scale dependent intra-crystalline backstress and Peach–Koehler force acting on GND densities. The model considers GND density evolution through a filtered numerical spectral approach, which is coupled with stress equilibrium through the elastoviscoplastic FFT algorithm. The discrete Fourier transform (DFT) method together with finite difference (FD) schemes is applied to solve both the backstress tensor and the Fourier–Green operator. Numerical results are first reported for two-phase laminate composites with plastic single crystal channels and elastic precipitates for shear loadings. Channel size effects are simulated and analyzed on the overall and local hardening behaviors during monotonous loadings. In addition, the evolutions of GND densities and the role of their associated backstress on size effects are examined during reversible shear loading. In a second part, the role of the defect energy internal length scale on polycrystal’s hardening during tension–compression is discussed. The results are compared to those obtained using FFT-based continuum field dislocation mechanics without defect energy.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Theoretical and computational comparison of models for dislocation dissociation and stacking fault/core formation in fcc crystals

In this study, the purpose of the current work is the theoretical and computational comparison of selected models for the energetics of dislocation dissociation resulting in stacking fault and partial dislocation (core) formation in fcc crystals as based on the (generalized) Peierls–Nabarro (GPN: e.g., Xiang et al., 2008, Shen et al., 2014), and phase-field (PF: e.g., Shen and Wang, 2004, Hunter et al., 2011, Hunter et al., 2013, Mianroodi and Svendsen, 2015), methodologies (e.g., Wang and Li, 2010).

36 MATERIALS SCIENCE↗