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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Smart Meter Pinging and Reading Through AMI Two-Way Communication Networks to Monitor Grid Edge Devices and DERs

Today’s power distribution system is changing to a power-electronics-enabled distribution system, especially with the increasing penetration of distributed energy resources (DERs). To monitor and manage those electronic devices and DERs at the grid edge, the advanced metering infrastructure (AMI) with two-way communications presents great potential. At present, extensive research explores the upstream communication from smart meters to electric utilities (e.g., meter reading) but few examine the downstream communication from the utilities to smart meters (e.g., meter pinging). This article discusses the AMI two-way communication and its recent industrial practice in the U.S., especially for applying the smart meter pinging functionality to monitor grid-edge devices and DERs. This paper then develops the two-way communication model and the network calculus method to quantify the impact of the two-way communication on the AMI network. In the end, the proposed method is validated with ns-3 simulation using the modified 13-node test feeder and real-world feeder systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Characterization and differentiation of aluminum powders used in improvised explosive devices. Part 2: Micromorphometric method refinement and preliminary statistical analysis

Abstract Aluminum (Al) powder is commonly encountered in improvised explosive devices (IEDs) as a metallic fuel due to its availability and low cost. Although available commercially in powder form, amateur bomb‐makers also produce their own Al powder via simple methods found online. In order to provide investigative leads and forensic intelligence, it is important to evaluate not only the composition of homemade devices, but also to distinguish between the various forms of Al powder they contain. To achieve this goal, a method using automated microscopy in combination with statistical techniques has been demonstrated to have the potential to provide source discrimination and investigative leads in source attribution of Al powders in IEDs. The present research refined this method and investigated 59 industrially and amateurly produced Al powder sources with seven subsamples per source using two traditional linear discriminant analyses (LDA), one with a standard data split for training and testing, and another using leave‐one‐out cross‐validation. Averaging the classification accuracies for the two LDA‐based analyses, LDA has the ability to correctly classify 59.26%, 83.35%, and 80.69% of the samples based on their powder source, type, and production method, respectively. This classification accuracy represents a 3407%, 317%, and 61.38% increase in accuracy from random class assignment, respectively. Further, in most instances of incorrect data attribution to a particular source, the subsample has been misidentified with another sample of the same powder type or production method.

Ommen, Danica M.↗
DOE OSTI2022

Quantum thermodynamic devices: From theoretical proposals to experimental reality

Thermodynamics originated in the need to understand novel technologies developed by the Industrial Revolution. However, over the centuries, the description of engines, refrigerators, thermal accelerators, and heaters has become so abstract that a direct application of the universal statements to real-life devices is everything but straight forward. Furthermore, the recent, rapid development of quantum thermodynamics has taken a similar trajectory, and, e.g., “quantum engines” have become a widely studied concept in theoretical research. However, if the newly unveiled laws of nature are to be useful, we need to write the dictionary that allows us to translate abstract statements of theoretical quantum thermodynamics to physical platforms and working mediums of experimentally realistic scenarios. To assist in this endeavor, this review is dedicated to provide an overview over the proposed and realized quantum thermodynamic devices and to highlight the commonalities and differences of the various physical situations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗
DOE OSTI2023

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Materials Science↗
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultra compact Bragg grating devices with broadband selectivity

Current silicon waveguide Bragg gratings typically introduce perturbation to the optical mode in the form of modulation of the waveguide width or cladding. However, since such a perturbation approach is limited to weak perturbations to avoid intolerable scattering loss and higher-order modal coupling, it is difficult to produce ultra-wide stopbands. In this Letter, we report an ultra-compact Bragg grating device with strong perturbations by etching nanoholes in the waveguide core to enable an ultra-large stopband with apodization achieved by proper location of the nanoholes. With this approach, a 15 µm long device can generate a stopband as wide as 110 nm that covers the entire C + L band with a 40 dB extinction ratio and over a 10 dB sidelobe suppression ratio (SSR). Similar structures can be further optimized to achieve higher SSR of > <#comment/> 17 d B for a stopband of about 80 nm.

Li, Ang (ORCID:0000000232251280)↗
DOE OSTI2022

Hybrid quantum nanophotonic devices with color centers in nanodiamonds [Invited]

Optically active color centers in nanodiamonds offer unique opportunities for generating and manipulating quantum states of light. These mechanically, chemically, and optically robust emitters can be produced in mass quantities, deterministically manipulated, and integrated with a variety of quantum device geometries and photonic material platforms. Nanodiamonds with deeply sub-wavelength sizes coupled to nanophotonic structures feature a giant enhancement of light-matter interaction, promising high bitrates in quantum photonic systems. We review the recent advances in controlled techniques for synthesizing, selecting, and manipulating nanodiamond-based color centers for their integration with quantum nanophotonic devices.

Sahoo, Swetapadma (ORCID:0000000179281391)↗
DOE OSTI2024

Traceable Device-Independent Randomness as a Service

We implement a traceable protocol for device-independent random number generation. Our demonstration involves transparently integrating a device-independent RNG into a public randomness beacon, and feeding 7434 random number pulses into the beacon over 39 days.

Kavuri, Gautam A.↗
DOE OSTI2023

Electrically switchable metallic polymer metasurface device with gel polymer electrolyte

Abstract We present an electrically switchable, compact metasurface device based on the metallic polymer PEDOT:PSS in combination with a gel polymer electrolyte. Applying square-wave voltages, we can reversibly switch the PEDOT:PSS from dielectric to metallic. Using this concept, we demonstrate a compact, standalone, and CMOS compatible metadevice. It allows for electrically controlled ON and OFF switching of plasmonic resonances in the 2–3 µm wavelength range, as well as electrically controlled beam switching at angles up to 10°. Furthermore, switching frequencies of up to 10 Hz, with oxidation times as fast as 42 ms and reduction times of 57 ms, are demonstrated. Our work provides the basis towards solid state switchable metasurfaces, ultimately leading to submicrometer-pixel spatial light modulators and hence switchable holographic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Techno-Economic Optimization of the SurgeWEC Device

This is the post-access report for a Teamer-funded effort to optimize the SurgeWEC device, a near-shore pivoting flap wave energy conversion device used to desalinate water. Parametrically driven cost and performance models enabled an integrated optimization approach at the farm scale. The metric used for this study was the levelized cost of water (LCOW). The data-set includes: 1. A public-domain post access report 2. An excel file with the data and plots generated under this study

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

Biocompatibility of a novel heat-treated and ceramic-coated magnesium alloy (Mg–1.2Zn–0.5Ca–0.5Mn) for resorbable skeletal fixation devices

Our recent exploration into the use of biodegradable metals and surface treatments resulting in sufficient strength for skeletal reconstruction applications has led to the need to test these devices’ cytotoxicity. More specifically, our group has developed a resorbable magnesium alloy, Mg–1.2Zn–0.5Ca–0.5Mn, that can be strengthened by heat treatment and coated with a ceramic layer offering time-certain resorption of a medical device. This in vitro study shows that these treatments do not result in cytotoxicity. Both heat-treated (HT) and HT + ceramic-coated (sol–gel) coupons demonstrated more than 70% viability. Thus, these processing steps are likely to be useful in producing biocompatible, resorbable implants that incorporate our Mg–1.2Zn–0.5Ca–0.5Mn alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Additive manufacturing for COVID-19: Devices, materials, prospects, and challenges

The current COVID-19 pandemic has caused the shortage of personal protective equipment (PPE) where improvised manufacturing in particular 3D printing has addressed many needs. This prospective discusses the current global crisis, then follows the wide interest in addressing the shortage of medical devices and PPEs used for treatment and protection against pathogens. An overview of the 3D printing process with polymer materials is given followed by the different 3D printing projects of PPEs and medical devices that emerged for the pandemic (including validation/testing). The potential for rapid prototyping with different polymer materials and eventual high-throughput production is emphasized.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Intra-molecular coupling within double-segmented molecules impacting magnetic tunnel junction-based molecular spintronics devices

The intra-molecular coupling within multiple units of paramagnetic molecules can produce various effects on molecular spintronics devices (MSD). Here, this paper focuses on double-segmented molecules as the device element to advance understanding of the Impact of internal molecular structure on magnetic tunnel junction-based MSD (MTJMSD). We performed Monte Carlo simulations (MCS) to fill the knowledge gap about the intramolecular coupling role in the magnetic properties of the MTJMSD. This study explored a double-segmented molecule containing two atomic sections, each with a net spin state interacting via Heisenberg exchange coupling within molecules and with ferromagnetic electrodes at different thermal energies, magnetic fields, and coupling strengths. This study also investigated the effect of magnetic field on the double-segmented molecule-based cross-junction-shaped MTJMSD. We also compared the effect of the magnetic field on the mono and double-segmented molecules when connected to two ferromagnetic electrodes. In the strong coupling regime, the intramolecular coupling and molecule coupling with the two ferromagnetic electrodes dominated the MTJMSD response near the molecular junction area. This study provides insight for evaluating the impact of molecular nanostructure internal connectedness on the integrated MSD.

36 MATERIALS SCIENCE↗
DOE OSTI2024

New Insertion Device Control System for the APS Upgrade

New Hybrid Permanent Magnet Undulators (HPMUs) have been designed and manufactured using servo motors for precise and reliable gap motion control for the Advanced Photon Source Upgrade (APS-U) project. Meanwhile, existing HPMUs equipped with legacy stepper motors are systematically replaced with servo motors. In parallel with mechanical modifications of the undulators, a comprehensive upgrade has been implemented for the control of the devices. This upgrade includes integration of standardized industrial components for replacement of motor controllers and motor drives using the Kollmorgen Programmable Controller Multi-axis Master (PCMM) controllers and the AKD2G series servo drives. Soft Input Output Controllers (IOCs) are developed and deployed to replace the legacy VME-based IOCs for both single-period undulators and Revolver undulators. In this paper, we will present the architecture of the new insertion device control system, including control mechanisms, interlock protocols, and tools for diagnostics and troubleshooting.

Li, W.↗
DOE OSTI2020

Approaching scalable VQE of interacting bosons with NISQ devices [Slides]

Scaling up variational quantum eigensolver (VQE) algorithms to practical applications utilizing quantum advantage with noisy intermediate-scale quantum (NISQ) devices is challenging. The expansive cost-function evaluation and demanding optimization quickly exhaust the precious quantum resource available on NISQ devices. In this work, we discuss the appropriate VQE strategy suitable for multi-site interacting boson systems, for example, the Holstein model and the Rabi lattice model. We investigate the cost-function setup and the optimization tactics to utilize the limited quantum resource efficiently. Our strategy illustrates that the scalable VQE algorithms of interacting bosons have a promising future.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗