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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

TRISO SiC Failure Probability for Reactivity Initiated Accidents in High-Temperature Gas-Cooled Reactors

This work analyzes the failure process of the silicon carbide (SiC) layer in tristructural isotropic (TRISO) during reactivity-initiated accident scenarios for a high-temperature gas-cooled reactor (HTGR) with BISON. Two cases are considered—a group control rod withdrawal (CRW) and a control rod ejection (CRE)—reproduced from a previous study. Failure probability is modeled using Weibull statistics, and worst-case scenario Weibull parameters are adopted to simulate the envelopes in BISON with a one-dimensional TRISO model. CRW scenario results are characterized by higher values of maximum energy deposition and final temperature and volumetric strain with respect to the CRE ones, but the latter have remarkably higher SiC failure probability, mainly due to the offset in strain rates between the two cases. This work also confirms the validity and conservatism of the performance envelopes produced in a previous work by replicating the envelope formulation using RELAP5-3D and RAVEN with a different sampling technique and obtaining consistent results. A sensitivity analysis using the Sobol variance decomposition method on SiC failure probability is then performed involving a set of inputs on both CRW and CRE. The two most important parameters are Weibull modulus and characteristic stress, and their relative importance depends on the specific case. The proposed interpretation of the results is that both energy deposition and strain rate influence the relative degree of importance of the failure parameters. Computation of 95% confidence intervals around worst-case scenario SiC failure probability values is also carried out for four different sets of Weibull parameters. Heren a new criterion for SiC TRISO quality classification built upon safety-based ranges of Weibull parameters is proposed to be integrated in future Fuel-Production Quality Assurance Plans.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Development of New Magnetron Sputter Deposition Processes for Laser Target Fabrication

Magnetron sputter deposition is an enabling technology for laser target fabrication. Solutions are readily available for the deposition of most sub-micron-thick elemental films on planar substrates. However, major challenges still remain for the development of robust deposition processes in regimes of ultrathick (over ~10 μm) coatings and nonplanar substrates. These challenging deposition regimes are directly relevant to laser target applications, including both sphero-cylindrical hohlraums and spherical ablators for inertial confinement fusion (ICF) targets. Understanding underlying physical mechanisms for a specific material system is crucial for process development, given the overall complexity of the deposition process, its nonlinear dependence on deposition parameters, and a very large process space, often precluding conventional process optimization approaches. Here, we describe our approach to developing new deposition processes and give practical advice with examples of new results from our ongoing studies of glassy boron carbide ceramics for next-generation ICF ablators and nonequilibrium gold-tantalum alloys for hohlraums for magnetized ICF schemes. Emphasis is given to two major challenges of ultrathick coatings related to achieving process stability and reducing residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability

In this paper, the concept and prototype of an aging detector for silicon carbide (SiC) power metal oxide semiconductor field effect transistor (MOSFET) are proposed and described. It leverages the resonant peak values of gate-source voltage at different instants during the switching transients to decode the change of multiple aging indicators, such as the increases of on-state resistance and threshold voltage. Modeling-based analysis is conducted to support the idea. The detector can be fully integrated into gate drivers without any additional connection to the power stage and is functional during normal power stage operation. A prototype unit was built, and preliminary tests were conducted to validate the idea and the practicality of the detector.

aging↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Ultra-Fast 4H-SiC LGAD With Etched Termination and Field Plate

The design, fabrication, and demonstration of a novel Silicon Carbide Low Gain Avalanche Detector (4HSiC LGAD), exhibiting an ultra-fast time response and excellent time resolution, are reported. Here, the use of field plates is proposed to suppress the high electric field caused by the negative bevel-etched angle in 4H-SiC LGADs based on TCAD simulations. Experimental measurements confirm that the field plate significantly increases the breakdown voltage of the 4H-SiC LGADs. Gain and time resolution are measured by using the ultraviolet transient current technique (UV-TCT) showing that 4H-SiC LGADs possess excellent timing performance, with a time resolution better than 35 ps for the injected laser signal with single minimum ionizing particle (MIP) charges generation at room temperature. Additionally, the gain suppression effect in a 4H-SiC LGAD is observed for the first time.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

High-Temperature Wireless Sensor Platform Powered by Energy Scavenging

This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2023

SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm 2

Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm 2 over a footprint of 0.25 cm 2 . The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm 2 . ° $C$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.

42 ENGINEERING↗
DOE OSTI2020

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2022

Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices

This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.

42 ENGINEERING↗
DOE OSTI2023

Medium-Voltage Isolated Auxiliary Power Supply Design for High Insulation Capability, Ultra-Low Coupling Capacitance, and Small Size

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as small as possible. However, the high insulation and low coupling capacitance requirements, considering the high voltage and high dv / dt , are constraints of size reduction. This article proposes an MV IAPS design for high insulation capability, ultra-low coupling capacitance, and small size. The topology selection, efficiency, load regulation, coupling capacitance, and size reduction considerations are discussed. A 2.5 W MV IAPS is designed and built for a 10 kV SiC mosfet -based 13.8 kV/100 kW three-phase converter, achieving a partial discharge (PD) inception voltage of higher than 15 kV rms, ultra-low coupling capacitance of 1.03 pF, and smaller size than that of the commercial products as well as the state-of-art research prototypes. Experimental results of PD test, 10 kV SiC mosfet -based half-bridge test, and 13.8 kV/100 kVA three-phase converter full rating test are conducted for design validation.

42 ENGINEERING↗
DOE OSTI2020

Why Wideband Gap Needs Techno-Economics

The wideband gap community when discussing projects antidotally refers to the cost of the technology, frequently noting the higher wideband gap upfront cost in comparison to the incumbent state of art. Other technologies such as photovoltaics have embraced techno-economics analysis (TEA) as a method of analytically articulating the impacts of research advancements on system performance and lifetime costs. Our TEA shows the potential impact of research advancements on Gallium Oxide (Ga2O3) and Silicon Carbide (SiC) wafer manufacturing cost, the impact on the levelized cost of electricity (LCOE) when using a SiC based solar inverter, and lastly how the high cost of devices (SiC in this case) can be offset by other system cuts, such as the footprint and cooling reductions in a 1MW variable frequency motor drive. The specific goal is to show analytically the lifetime cost and performance benefits of adopting wideband gap technology whether it is at the device level or it is cumulative benefit though a simplified balance of system.

14 SOLAR ENERGY↗
DOE OSTI2022

Mechanistic modeling of lifetime distribution of SiC/SiC composite claddings

Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites have emerged as a new material candidate for fuel claddings in light water reactors. Recent studies showed that the load capacity of SiC/SiC materials exhibits a considerable statistical variation. Therefore, reliability analysis plays a critical role in design of SiC/SiC composite claddings. Here, this paper presents a probabilistic model for the lifetime distribution of SiC/SiC composites. The model is anchored by a multiaxial stress-based failure criterion and subcritical damage accumulation mechanism. Based on the kinetics of subcritical damage growth, the lifetime distribution of a laboratory test specimen for any given loading history can be calculated. A finite weakest-link model is used to extrapolate the lifetime distribution of test specimens to full-length claddings. It is shown that the damage accumulation mechanism has a strong influence on the lifetime distribution of the cladding. This finding highlights the importance of understanding the static fatigue behavior of SiC/SiC composites. The present analysis also demonstrates an intricate length effect on the failure probability of the cladding, which is expected to play a crucial role in design extrapolation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Neutronics Analysis of Cold Critical KRUSTY Experiments using MCNP and Serpent

Kilowatt Reactor Using Stirling Technology (KRUSTY) is a prototype designed as a proof of concept for NASA’s Kilo power program, which was funded in order to create a small reactor for various space applications such as providing power for a colony on Mars or the moon and eventually as a possible option for powering rockets on deep space missions. KRUSTY was tested at the National Criticality Experiments Research Center (NCERC) located at the Nevada National Security Site (NNSS) from November 2017, through March 2018. The experimental campaign was conducted in four phases: com ponent critical experiments, cold critical experiments, warm critical runs, and high temperature demonstration. The component critical and cold critical experiments were used to determine the worth of the beryllium oxide (BeO) reflector rings and the boron carbide (B4C) control rod disks under different conditions. These conditions were altered by the addition and subtraction of other components in the assembly. The component critical phase was performed at atmospheric pressure and had four solid support rods spanning the center core; whereas the cold critical phase had the center core placed in a vacuum chamber and eight sodium-filled heat pipes spanning the center core region. This summary discusses the static neutronic analysis completed on the cold critical phase of the campaign using MCNP ® and Serpent. These two codes were used to assess any potential differences or biases in the simulation results. Understanding these potential biases is a key step toward the final goal of being able to fully analyze the transient experiments performed during phases 3 and 4 of the campaign.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Atomistic and mesoscale simulations to determine effective diffusion coefficient of fission products in SiC

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) particles serves as the barrier to prevent escape of fission products produced in the fuel kernel. Knowing the diffusion coefficient of fission products through SiC is critical to determining whether fission gas can escape from the particle. It has been observed in experiments that Ag accumulated in grain boundaries and triple junctions in SiC. It is hypothesized that grain boundary diffusion is the primary pathway by which fission products penetrate the SiC layer. In this report, the effective diffusion coefficient of the fission product Ag through the grain boundary network is calculated using a combination of atomistic and phase-field methods. The grain boundary diffusion coefficient is calculated using molecular dynamics simulations. The bulk diffusion coefficient is determined using a combination of density functional theory and nudged elastic band methods. An effective diffusion coefficient is calculated, accounting for the grain structure using a phase-field method. The effective diffusion coefficient will be incorporated into Bison and fission product release calculations are compared to available experimental data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗