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At least 667 records · Page 37

Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically-Vapor-Deposited Silicon Carbide

Pure coupons of chemically vapor deposited (CVD) SiC were oxidized for 100 h in dry flowing oxygen at 1300 C. The oxidation kinetics were monitored using thermogravimetry (TGA). The experiments were first performed using high-purity alumina reaction tubes. The experiments were then repeated using fused quartz reaction tubes. Differences in oxidation kinetics, scale composition, and scale morphology were observed. These differences were attributed to impurities in the alumina tubes. Investigators interested in high-temperature oxidation of silica formers should be aware that high-purity alumina can have significant effects on experiment results.

Opila, Elizabeth↗

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Opila, Elizabeth J.↗

Dopant Incorporation Efficiency in CVD Silicon Carbide Epilayers

In order to ensure reproducible and reliable SiC semiconductor device characteristics, controlled dopant incorporation must be accomplished. Some of the many factors which greatly influence dopant incorporation are the site-competition effect, SiC(0001) substrate polarity, substrate temperature, and the dopant-source reactor concentration. In this paper, dopant incorporation is considered and compared for various dopants in the context of dopant incorporation efficiency. By using secondary ion mass spectrometry (SIMS), the relative dopant incorporation efficiencies were calculated by dividing the SIMS determined dopant concentration in the resulting epitaxial layer by the intentional gas phase dopant concentration used during the SiC CVD. Specifically, the relative magnitudes of dopant incorporation efficiencies for nitrogen, phosphorus, and boron in 6H-SiC (0001) Si-face epitaxial layers are compared as a function of the site-competition effect and the dopant-source reactor concentrations. This serves as a first approximation for comparison of the relative 'doping potencies' of some common dopants used in SiC CVD epitaxial growth.

Larkin, D. J.↗

Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals

Single crystal SiC substrates were subjected to high-temperature H2/C3H8 gaseous etches. The etches resulted in a variety of surface features on 4H-SiC substrates that included elongated hillocks from 10 to more than 100 microns in length by a few microns in width. In some 4H- and 6H-SiC substrates, the etches resulted in a continuous coverage of macrosteps. We conclude that the morphology observed after the etching process is influenced by the local Si-C bilayer stacking sequence on the surface of off-(0001)oriented substrates. A model is presented for the formation of the hillocks, based on localized transformations of the 4H substrates during the high temperature etch process.

Powell, J. A.↗

Transverse Strength of SCS-6 Silicon Carbide Fibers

A diametral compression test was used to measure the transverse strength of SCS-6 SiC fibers before and after heat treatment. Subjecting fibers to diametral compression successfully produced transverse tensile failure in the form of fiber cracking along the same diametral plane in which the compressive load was applied. An analysis of the hoop stress along the diametral plane, in which the effects of the C core were included, showed that there is a large tensile hoop stress concentration in the SiC sheath at the interface between the C core and the SiC sheath, where the stress is 6.3 times greater than the stress present in a solid SiC fiber under identical loading. This high tensile hoop stress concentration promotes crack initiation near the core and significantly limits the capability of these fibers to withstand transverse compressive loading. The maximum tensile hoop stresses, located at the interface between the C core and SiC sheath, at the measured failure loads were 850 MPa for the as-received SCS-6 fiber and 1210 MPa for fibers exposed to a 1-h heat treatment at 1850°C in 138 MPa of Ar.

Jeffrey I. Eldridge↗

Effects of Fiber Coating Composition on Mechanical Behavior of Silicon Carbide Fiber-Reinforced Celsian Composites

Celsian matrix composites reinforced with Hi-Nicalon fibers, precoated with a dual layer of BN/SiC by chemical vapor deposition in two separate batches, were fabricated. Mechanical properties of the composites were measured in three-point flexure. Despite supposedly identical processing, the composite panels fabricated with fibers coated in two batches exhibited substantially different mechanical behavior. The first matrix cracking stresses (sigma(sub mc)) of the composites reinforced with fibers coated in batch 1 and batch 2 were 436 and 122 MPa, respectively. This large difference in sigma(sub mc) was attributed to differences in fiber sliding stresses(tau(sub friction)), 121.2+/-48.7 and 10.4+/-3.1 MPa, respectively, for the two composites as determined by the fiber push-in method. Such a large difference in values of tau(sub friction) for the two composites was found to be due to the difference in the compositions of the interface coatings. Scanning Auger microprobe analysis revealed the presence of carbon layers between the fiber and BN, and also between the BN and SiC coatings in the composite showing lower tau(sub friction). This resulted in lower sigma(sub mc) in agreement with the ACK theory. The ultimate strengths of the two composites, 904 and 759 MPa, depended mainly on the fiber volume fraction and were not significantly effected by tau(sub friction) values, as expected. The poor reproducibility of the fiber coating composition between the two batches was judged to be the primary source of the large differences in performance of the two composites.

Bansal, Narottam P.↗

Design, Operation, and Modeling of a Vertical APCVD Reactor for Silicon Carbide Film Growth

An atmospheric pressure chemical vapor deposition (APCVD) reactor utilizing a unique vertical geometry which enables 3C-SiC films to be grown on two, 4-inch diameter Si wafers has been constructed. Contrary to expectations, 3C-SiC films grown in this reactor are thickest at the downstream end of the substrates. To better understand the reason for the thickness distribution on the wafers, an axisymmetric finite-element model of the gas flow in the reactor was constructed. The model uses the ANSYS53 Flowtran package and includes compressible and temperature-dependent fluid properties in laminar or turbulent flow. It does not include reaction chemistry or unsteady flow. The ANSYS53 results predict that the cool, inlet fluid falls through the inlet pipe and the warm, diffuser region like a jet. This jet impinges on top of the susceptor and gets diverted to the reactor side walls, where it flows to the bottom of the reactor, turns, and slowly rises along the face of the susceptor. This may explain why the SiC films are thickest at the downstream side of the wafers, as gas containing fresh reactants first passes over this region. Modeling results are presented for both one atmosphere and one half atmosphere reactor pressure.

DeAnna, Russell G.↗

Subparabolic Oxidation Behavior of Silicon Carbide at 1300 C

The phenomenon of subparabolic oxide growth rate, more the rule than the exception in the oxidation of silica formers, is examined in light of data sets acquired in SiC oxidation experiments at 1300 C. Negative deviation from parabolic kinetics is shown to correlate with oxide crystallinity. The data sets were analyzed to ascertain the predominant and contributing growth laws, and tested with models that describe the overall kinetics as combinations of the familiar growth laws.

Ogbuji, Linjus U. J. T.↗

600 C Logic Gates Using Silicon Carbide JFET's

Complex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.

Neudeck, Philip G.↗

Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain

We used a focused ion beam workstation to prepare ultra-thin sections of a presolar SiC grain. Our TEM studies indicate that the SiC formed by rapid vapor-phase condensation, trapping pre-existing graphite grains in random orientations. Additional information is contained in the original extended abstract.

Stroud, Rhonda M.↗

Isotopic Study of Silicon Carbide in Semarkona

We have measured Si and C isotopes for individual SiC grains from Semarkona. Our results are compared with those of previous studies on SiC from Murchison and Orgueil. Metamorphism and grain-size distribution can affect these comparisons. Additional information is contained in the original extended abstract.

Smith, Julie B.↗

Isotopic Composition of Barium in Single Presolar Silicon Carbide Grains

We have measured Ba isotope distributions in individual presolar SiC grains. We find that the Ba isotopic composition in mainstream SiC grains is consistent with models of nucleosynthesis in low to intermediate mass asymptotic giant branch (AGB) stars. Additional information is contained in the original extended abstract.

Savina, M. R.↗

Pristine Presolar Silicon Carbide

In this talk we discuss a simple physical disaggregation technique coupled with an X-ray mapping procedure used to locate 81 micrometer-sized presolar SiC grains from the Murchison carbonaceous chondrite, that preserves them in their pristine state. We then describe pristine SiC surface characteristics and overall morphologies determined by high resolution field emission scanning electron microscopy (FESEM), and compare these features to those of presolar SiC grains that have been prepared using chemical dissolution techniques.

Bernatowicz, T. J.↗

Isotopic Composition of Silicon Carbide in the CO3 Chondrite Colony

Presolar grains have been identified in primitive members of all chondrite classes. The isotopic compositions of presolar grains provide probes of galactic evolution and nucleosynthesis in stars, while the abundances and characteristics of presolar grains contain a record of thermal processing in the solar system. Most of the detailed isotopic work has been done on SiC from Murchison and Orgueil, supplemented by a few studies of ordinary and enstatite chondrites. This work investigates SiC in the Colony CO3.O meteorite. SiC is present in Colony at a matrix-normalized abundance of approximately 3.7 ppm, much less than in CI chondrites and the matrixes of CM and primitive ordinary and enstatite chondrites. The abundances of SiC and other presolar grains in Colony seem to correlate with the chemical processing that produced CO3 chondrites. This implies that the known presolar grains experienced the same processing as the bulk CO3 material and assumes that the parent material was the same as that for other chondrites, including CI. That parent material is most plausibly the average material in the sun s parent molecular cloud. One test of this idea is to look for primary differences between SiC in Colony (and other meteorites) and that in CI and CM chondrites. True differences not related to thermal processing would falsify the assumption that all chondrite classes originated from the same reservoir of presolar dust.

Smith, J. B.↗

Isotopic Composition of Molybdenum and Barium in Single Presolar Silicon Carbide Grains of Type A+B

Presolar SiC grains fall into several groups based on C, N, and Si isotopic compositions. Approximately 93% are defined as mainstream, having 10 less than C-12/C-13 less than 100 and N-14/N-15 ranging from 50 to 20,000. A number of studies have shown that the most likely sources of mainstream grains are low mass asymptotic giant branch stars. Models of nucleosynthesis in AGB stars reproduce the s-process enhancements seen in the heavy elements in mainstream SiC grains. Among the less common grains, A+B grains, which comprise approximately 3-4% of presolar SiC, are perhaps the least well understood. Recent studies by Amari et al. show that A+B grains can be divided into at least 4 groups based on their trace element concentration patterns. Of 20 grains studied, 7 showed trace element patterns consistent with condensation from a gas of solar system composition, while the rest had varying degrees of process enhancements. Our previous measurements on 3 A+B grains showed Mo of solar isotopic composition, but Zr with a strong enhancement in 96Zr, which is an r-process isotope but can be made in an sprocess if the neutron density is high enough to bridge the unstable Zr-95 (T(sub 1/2)= 64 d). The observation of Mo with solar system isotopic composition in the same grains is puzzling however. Meyer et al. have recently shown that a neutron burst mechanism can produce a high Zr-96/Zr-94 without enhancing Mo-100, however this model leads to enhancements in Mo-95 and Mo-97 not observed in A+B grains. We report here results of Mo measurements on 7 additional A+B grains, and Ba measurements on 2 A+B grains, and compare these to the previous studies.

Savina, M. R.↗

Transmission Electron Microscopy of Non-Etched Presolar Silicon Carbide

Our solar system formed from nuclei produced in earlier generations of stars. Mixing in the proto-solar nebula isotopically homogenized most of this material, but some grains, called presolar grains, retain their original isotopic composition. The isotopic properties of presolar SiC grains indicate that most of the grains formed in the outflows of carbon-rich Asymptotic Giant Branch (AGB) stars. The microstructure of these presolar grains reflects the conditions of the dust formation and subsequent alteration. Early microstructural studies of SiC grains obtained by acid dissolution from meteorites show that most isotopically anomalous SiC grains have the face-centered cubic b- SiC structure. However, Daulton et al. have shown that a small fraction of sub-micron presolar SiC grains are of the hexagonal 2H polytype (a-SiC). Although the harsh chemical treatments of these grains does not alter their crystal structure, significant alteration of the surface morphology of the grains due to the acid treatments has been observed. In addition, the acid treatments may preferentially remove cracked or fissured grains, and possible sub-grains, such as graphite. By studying SiC grains isolated by physical separation and found in situ, we attempt to obtain a more complete analysis of presolar SiC microstructures, including the surface morphology, in order to address the formation and processing history of the grains. In our prior work, we reported on one in situ SiC grain (hereafter CBIS1). Here we present results from two additional grains, one in situ, and one prepared as a physical separate.

Stroud, Rhonda M.↗

Silicon Carbide Fiber-Reinforced Silicon Nitride Composites

The fabrication and thermo-mechanical properties of SiC monofilament- and SiC fiber tow-reinforced reaction-bonded silicon nitride matrix composites (SiC/RBSN) and fully dense SiC monofilament-reinforced silicon nitride matrix composites (SiC/Si3N4) have been reviewed. The SiC/RBSN composites display high strength and toughness, and low thermal conductivity in the as-fabricated condition, but are susceptible to internal oxidation and mechanical property degradation in the intermediate temperature range from 400 to 1100 C. The internal oxidation problem can be avoided by applying functionally graded oxidation resistant coatings on external surfaces of the composite. On the other hand, the fully dense SiC/SiC3N4 composites fabricated by using SiC monofilaments and pressure assisted sintering methods display moderate strength and limited strain capability beyond matrix cracking stress. Advantages, disadvantages, and potential applications of SiC fiber-reinforced silicon nitride matrix composites fabricated using various fiber types and processing methods are discussed.

Bhatt, Ramakrishna T.↗