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At least 667 records · Page 37

Stabilizing Liquids Using Interfacial Supramolecular Polymerization

The strong electrostatic interactions at the oil–water interface between a small molecule, 5,10,15,20-tetrakis(4-sulfonatophenyl)porphyrin, H 6 TPPS, dissolved in water, and an amine terminated hydrophobic polymer dissolved in oil are shown to produce a supramolecular polymer surfactant (SPS) of H 6 TPPS at the interface with a binding energy that is sufficiently strong to allow an intermolecular aggregation of the supramolecular polymers. SPSs at the oil–water interface are confirmed by in situ real-space atomic force microcopy imaging. The assemblies of these aggregates can jam at the interface, opening a novel route to kinetically trap the liquids in non-equilibrium shapes. The elastic film, comprised of SPSs, wrinkles upon compression, providing a strategy to stabilize liquids in non-equilibrium shapes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates

InGaAs is one of the III–V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal–semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Lastly, ZnO ALD on In 0.53 Ga 0.47 As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy -1 , as expected for layer-by-layer ZnO ALD.

36 MATERIALS SCIENCE↗

Effects of drive pulse shape on graded metal pushered single shell capsule implosions on the National Ignition Facility

Graded metal pushered single shells (PSS) are a viable alternative to low-Z capsules (Z is the atomic number) for indirect drive inertial confinement fusion implosions due to enhanced core tamping and radiation trapping, but they can be compromised by the pusher mixing with the fuel. We compare 2-shock and 3-shock laser pulses for Be/Cr PSS capsules filled with deuterium–tritium gas fuel at 6 mg/cc density. 1D radiation-hydrodynamic simulations predict higher core compression and, hence, ∼2× higher fusion yield for the 3-shock drive than for 2-shock. Nevertheless, we observe similar core ion temperatures and fusion yields for both drives. The implosion burn duration is 25% shorter and the core volume is ∼2.5× smaller for the 3-shock drive than for 2-shock, consistent with a higher compression. 1D LASNEX mix simulations using a buoyancy-drag model matching the measured yields also agree with the observed core sizes and burn durations and suggest ∼40% and ∼70% yield degradations for 2-shock and 3-shock drives due to hydrodynamic instabilities and atomic mix at the pusher–fuel interface. At the same time, 2D HYDRA simulations show that mid-mode (2–250) instability degradations are negligible for the 2-shock implosion (9%) and significant (45%) for 3-shock. Subtracting these from the 1D mix simulations, we infer similar degradations from high-mode instabilities and atomic mix for both drives. Due to its robustness to mid-mode instabilities, future pusher–gas mix studies will use the 2-shock drive.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The synergistic role of Mn and Zr/Ti in producing θ'/L12 co-precipitates in Al-Cu alloys

Microstructural stability is a critical factor to consider when designing new alloys for high-temperature applications. An Al-Cu alloy with Mn and Zr additions has recently been developed to withstand extended exposures of up to 350 °C. The addition of Mn in combination with Zr and their segregation to precipitate interfaces play a significant role in stabilizing the metastable θ ' precipitates responsible for the alloy's hardness; however, adding Zr and Mn separately only improves the stability to 200 °C and 300 °C, respectively. To this end, the effect of the synergistic additions on interfacial structure and chemistry was studied in detail using atom probe tomography (APT) and scanning transmission electron microscopy (STEM) for Al-Cu-Mn-Zr/Ti-containing alloys subjected to long-term annealing (up to 2,100 h) in the critical temperature range, 300 °C and 350 °C, to investigate the role of Zr/Ti in increasing the θ '-precipitate stability. The APT and STEM results reveal that Mn additions stabilize θ ' long enough for the slower diffusing Zr atoms to segregate to coherent θ ' interfaces that eventually create a θ '/ L1 2 -Al 3 (Zr x ,Ti 1-x ) co-precipitate structure. The co-precipitate is highly stable, as shown by density functional theory calculations, and is a key factor that governs microstructural stability beyond 300 °C. This study reveals how solute additions with different stabilization mechanisms can work in concert to stabilize a desired microstructure, and the results provide insights that can be applied to other high-temperature alloy systems.

36 MATERIALS SCIENCE↗

Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopy

The control of tunnel contact resistance is of primary importance for semiconductor-based spintronic devices. This control is hardly achieved with conventional oxide-based tunnel barriers due to deposition-induced interface states. Manipulation of single 2D atomic crystals (such as graphene sheets) weakly interacting with their substrate might represent an alternative and efficient way to design new heterostructures for a variety of different purposes including spin injection into semiconductors. In the present paper, we study by x-ray photoemission spectroscopy the band alignments and interface chemistry of iron–graphene-hydrogenated passivated silicon (001) surfaces for a low and a high n-doping concentration. We find that the hydrogen passivation of the Si(001) surface remains efficient even with a graphene sheet on the Si(001) surface. For both doping concentrations, the semiconductor is close to flat-band conditions which indicates that the Fermi level is unpinned on the semiconductor side of the Graphene/Si(001):H interface. When iron is deposited on the graphene/Si(001):H structures, the Schottky barrier height remains mainly unaffected by the metallic overlayer with a very low barrier height for electrons, a sought-after property in semiconductor based spintronic devices. Finally, we demonstrate that the graphene layer intercalated between the metal and semiconductor also serves as a protection against iron-silicide formation even at elevated temperatures preventing from the formation of a Si-based magnetic dead layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Liquid atomization by coaxial rocket injectors

The atomization characteristics of a scaled-down version of a coaxial rocket injector was investigated using a phase Doppler particle analyzer (PDPA). The injector was operated in the conventional mode with liquid being injected through its inner orifice and gas being injected through its outer annulus. The shearing action occurring at the liquid-gas interface causes the liquid jet to atomize. In this study, two different liquid-air systems, namely a water-air system and a liquid nitrogen-gaseous nitrogen system, were chosen for detailed investigation. This paper discusses the performance characteristics of the coaxial injector under different flow and geometric conditions. Specifically, the effects of injection gas pressure and the injector cavity size on variables such as the mean particle diameter, Sauter mean diameter, number density, volume flux, and velocity have been presented.

Sankar, S. V.↗

Parallel Runtime Interface for Fortran (PRIF) Specification (Rev. 0.3)

This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

Parallel Runtime Interface for Fortran (PRIF) Design Document (Rev. 0.2)

This design document proposes an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

Parallel Runtime Interface for Fortran (PRIF) Specification (Rev. 0.4)

This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

Interface characteristics of Ti6Al4V-TiAl metal-intermetallic laminate (MIL) composites prepared by a novel hot-pack rolling

Highlights: • The Ti6Al4V/high Nb-TiAl metal-intermetallic (MIL) composite was fabricated. • The formation of γ and α{sub 2} phase at interface is diffusion controlled. • The formation of O phase at interface is due to the segregation of Nb atoms. • The Vickers hardness from Ti6Al4V to TiAl alloy shows a trend of a decrease then an increase and finally a decrease. - Abstract: Ti6Al4V (wt%)/Ti-44Al-8Nb-0.2W-0.2B-0.03Y (at.%) (high Nb-TiAl) metal–intermetallic laminate (MIL) composite with a defect-free interface was successfully prepared by hot-pack rolling and the interface microstructure was characterized by XRD, SEM, EBSD, and TEM techniques. The results showed that the interface was about 260 μm thick and consisted of four different microstructure regions. The thickness of each region was about 60–80 μm and the microstructure of the four regions consisted of acicular O, α{sub 2}, and β/B2 phases; acicular α{sub 2} phase; acicular α{sub 2} and β/B2 phases; and acicular γ, α{sub 2}, and β/B2 phases respectively. The resulting microstructure of the interface region was attributed to the interdiffusion of Ti atoms from the starting Ti6Al4V alloy layer to the high Nb-TiAl alloy layer and Al and Nb atoms from the high Nb-TiAl alloy layer to the Ti6Al4V alloy layer. The formation of acicular α{sub 2} and γ phases was diffusion-controlled and the Nb segregation at the interface caused the formation of O phase which had specific relationships with α{sub 2} and β/B2 phases. The detailed interface microstructural evolution of the Ti6Al4V/high Nb-TiAl MIL composite and the Vickers hardness of the composite are also discussed in this paper.

36 MATERIALS SCIENCE↗

Phosphorus diffusion and deactivation during SiGe oxidation

Dopant profiles near the semiconductor–oxide interface are critical for microelectronic device performance. As the incorporation of Si 1−x Ge x into transistors continues to increase, it is necessary to understand the behavior of dopants in Si 1−x Ge x . In this paper, the diffusion and electrical activation of phosphorus within a strained, single-crystal Si 0.7 Ge 0.3 layer on Si during oxidation are reported. Both layers were uniformly doped, in situ, with an average phosphorus concentration of 4 × 10 19 atoms/cm 3 . After high-temperature oxidation, secondary ion mass spectrometry measurements revealed that the bulk of the phosphorus diffuses out of only the SiGe layer and segregates at the oxidizing SiGe–SiO 2 interface. Hall effect measurements corroborate the observed phosphorus loss and show that the phosphorus diffusing to the oxidizing interface is electrically inactive. Through density functional theory (DFT) calculations, it is shown that phosphorus interstitials prefer sites near the SiGe–SiO 2 interface. Finally, based on a combination of experimental data and DFT calculations, we propose that the phosphorus atoms are displaced from their lattice sites by Ge interstitials that are generated during SiGe oxidation. The phosphorus atoms then migrate toward the SiGe–SiO 2 interface through a novel mechanism of hopping between Ge sites as P–Ge split interstitials. Once they reach the interface, they are electrically inactive, potentially in the form of interstitial clusters or as part of the reconstructed interface or oxide.

Thornton, Chappel S.↗

Lithiation-enhanced charge transfer and sliding strength at the silicon-graphene interface: A first-principles study

The application of silicon as ultrahigh capacity electrodes in lithium-ion batteries has been limited by a number of mechanical degradation mechanisms including fracture, delamination and plastic ratcheting, as a result of its large volumetric change during lithiation and delithiation. Graphene coating is one feasible technique to mitigate the mechanical degradation of Si anode and improve its conductivity. In this paper, first-principles calculations are performed to study the atomic structure, charge transfer and sliding strength of the interface between lithiated silicon and graphene. Our results show that Li atoms segregate at the (lithiated) Si-graphene interface preferentially, donating electrons to graphene and enhancing the interfacial sliding resistance. Moreover, the interfacial cohesion and sliding strength can be further enhanced by introducing single-vacancy defects into graphene. These findings provide insights that can guide the design of stable and efficient anodes of silicon/graphene hybrids for energy storage applications.

36 MATERIALS SCIENCE↗

Microscopic and Macroscopic Characterization of Grain Boundary Energy and Strength in Silicon Carbide via Machine-Learning Techniques

Predicting the properties of grain boundaries poses a challenge because of the complex relationships between structural and chemical attributes both at the atomic and continuum scales. Grain boundary systems are typically characterized by parameters used to classify local atomic arrangements in order to extract features such as grain boundary energy or grain boundary strength. The present work utilizes a combination of high-throughput atomistic simulations, macroscopic and microscopic descriptors, and machine-learning techniques to characterize the energy and strength of silicon carbide grain boundaries. Additionally, a diverse data set of symmetric tilt and twist grain boundaries are described using macroscopic metrics such as misorientation, the alignment of critical low-index planes, and the Schmid factor, but also in terms of microscopic metrics, by quantifying the local atomic structure and chemistry at the interface. These descriptors are used to create random-forest regression models, allowing for their relative importance to the grain boundary energy and decohesion stress to be better understood. Results show that while the energetics of the grain boundary were best described using the microscopic descriptors, the ability of the macroscopic descriptors to reasonably predict grain boundaries with low energy suggests a link between the crystallographic orientation and the resultant atomic structure that forms at the grain boundary within this regime. For grain boundary strength, neither microscopic nor macroscopic descriptors were able to fully capture the response individually. However, when both descriptor sets were utilized, the decohesion stress of the grain boundary could be accurately predicted. These results highlight the importance of considering both macroscopic and microscopic factors when constructing constitutive models for grain boundary systems, which has significant implications for both understanding the fundamental mechanisms at work and the ability to bridge length scales.

36 MATERIALS SCIENCE↗

Probing potential energy landscapes via electron-beam-induced single atom dynamics

Structure, bonding, and chemical dynamics of reactions at surfaces and interfaces, and therefore most material properties are intrinsically tied to the energetic landscape in which each atom resides. Here, we demonstrate that a moving atom under electron beam excitation can be used to probe the energy landscape along (confined) step edges, providing information about atomic-scale potentials. In conclusion, the techniques for experimentally exploring atomic potentials holds promise for predictive atom-by-atom fabrication using electron beams.

36 MATERIALS SCIENCE↗

Revealing Phase Heterogeneity in Vertically Aligned Nanocomposites via Plan-View Electron Energy Loss Spectroscopy

Hydrogen utilization in clean energy technologies is challenged by limited storage and transport within materials, owing to the complex hydrogen kinetics at interfaces [1]. Understanding these interfacial mechanisms at the nanoscale is crucial for developing improved materials for hydrogen applications, particularly proton-conducting fuel cells (PCFCs). Vertically aligned nanocomposites (VANs) grown by pulsed laser deposition (PLD) offer a unique platform for investigating the interfacial effects on hydrogen transport due to their well-defined interfaces parallel to the direction of charge transport [2-4]. To investigate hydrogen transport, the two phases within the VANs were chosen as BaZr 0.9 Y 0.1 O 3-x (BZY), a known proton conductor, and Pr 0.1 Ce 0.9 O 2-x (PCO), a mixed ionic-electronic conductor [5]. This PCO-BZY VANs architecture allows the investigation of how the interface between a proton conductor and a mixed conductor influences hydrogen transport. However, because of the small size of hydrogen, it is difficult to discern the nature of its interactions with interfaces from bulk measurements at the macroscale, thus necessitating nanoscale measurements [6]. Electron energy loss spectroscopy (EELS) allows for nanometer-resolution probing of the local atomic structure and chemistry at the BZY/PCO interface. In this study, plan-view analysis of PCO-BZY VANs films was employed to characterize the structure and phase distribution of the VANs and investigate the interface between the nanostructures. The films were imaged using scanning electron microscopy (SEM) in the Hitachi S-4800 SEM, collecting secondary electron images using mixed upper and lower detectors. Then, plan-view transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) EELS were employed using a JEOL ARM300 microscope operated at 300kV with a Gatan K3 GIF Continuum detector to study the distribution of the BZY and PCO phases through the film. As a result, spectrum images were acquired at a dispersion of 0.18eV per channel and denoised afterward by principal component analysis (PCA) method.

Griffin, Elizabeth [Northwestern University, Evans↗

Enhancing interfacial magnetization with a ferroelectric

Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr 0.2 Ti 0.8 O 3 /La 0.8 Sr 0.2 MnO 3 (PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μ B /f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE Energy Frontiers Research Center for Heterogeneous Functional Materials; the “HeteroFoaM Center”

Synopsis of five year accomplishments: Devices that convert and store energy are generally made from heterogeneous constituent materials that act and interact to selectively conduct, transport, and separate mass, heat, and charge. Controlling these actions and interactions enables the technical breakthroughs that have made fuel cells, batteries, and solid state membranes, for example, essential parts of our society. In the biological sense, these materials are ‘vascular’ rather than primitive ‘cellular’ materials, in which the arrangements and configurations of the constituents (including their void phases) play essential and definitive roles in their functional capabilities. In 2009 a group of investigators, with lifetime investments of effort in the understanding of heterogeneous materials, recognized that the design of such material systems is not an optimization problem as such. Local interactions of the constituents create “emergent” properties and responses that are not part of the formal set of constituent characteristics, in much the same sense that society and culture is created by the group interactions of the people involved. The design of emergent properties is an open question in all formal science, but for energy materials the lack of this foundation science relegates development tasks to Edisonian trial and error, with anecdotal success and frequent costly failures. That group defined, for the first time, multi-scale heterogeneous functional materials with functional disordered and void phase regions as “HeteroFoaM,” and formed the first multidisciplinary research team to define and codify the foundation science of that material class. The primary goal of the HeteroFoaM Center was, and is, to create and establish the multi-scale fundamental knowledge and related methodology required for the rational and systematic multiphysics design of heterogeneous functional materials and their interfaces and surfaces for applications in energy transformation and storage. The scope of the HeteroFoaM center was focused on the discovery and development of the control science of key phenomena across multiple length scales that create functionality in heterogeneous materials and their structured interfaces, boundaries, and surfaces for applications in energy technologies. The HeteroFoaM Center defined a critical path and established an essential foundation for progress in the field of heterogeneous functional materials. Perhaps the single most important element of progress was the establishment of the capability to design, characterize, and model heterogeneous functional materials at the conformal level, i.e., for a limited set of material systems, the HeteroFoaM team defined how to control the order / disorder at the atomic level, the surfaces, and the interfaces for selected constituent morphologies, and to use multiphysical models to explain the remarkable property variations resulting from that control science for several heterogeneous material systems. For those cases we defined “meso-structures” (at various scales) where the interactive physics of constituent phases acted to create emergent properties, e.g., strongly emergent mixed conductor behavior and ionic transport. The general approach used by this EFRC is shown in Fig. 1. The HeteroFoaM Center created the genre of Heterogeneous Functional Materials with functional surfaces and interfaces (including void phases) called HeteroFoaM as a science platform to enable rational analysis and design of functional material systems by focusing on the meso-interactions that drive emergent response. The team firmly established this approach with over 180 archival publications (see “Publications” section), 7 patent applications, and over 100 invited lectures in 15 countries on this topic, enabled by building a remarkably effective and uniquely coherent research team. Indeed, our team was our principal strength; this problem eluded solution earlier because such a team was not available.

36 MATERIALS SCIENCE↗