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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Both Free and Trapped Carriers Contribute to Photocurrent of Sb 2 Se 3 Solar Cells

Polycrystalline semiconductor films, such as methylammonium lead iodide, cadmium telluride, copper-indium-gallium selenide, etc., are being intensively studied due to their great potential for highly efficient and cost-effective solar cells. Among them, polycrystalline antimony chalcogenide films are also promising for photovoltaic applications because they are nontoxic, stable, flexible, and have a suitable bandgap. Considerable effort has already been devoted to improving the power conversion efficiency of antimony chalcogenide solar cells, but their efficiency still lingers below 10% due in part to scarce fundamental optoelectronic studies that help guide their development. Here, we use a combination of time-resolved terahertz and transient absorption spectroscopies to interrogate the optoelectronic behavior of antimony selenide thin films. By combining these two techniques we are able to monitor both free and trapped carrier dynamics and then evaluate their respective diffusion lengths. Our results indicate that trapped carriers remain mobile and can reach charge collecting interfaces prior to recombination, and therefore, both free and trapped carriers can contribute to the photocurrent of antimony selenide solar cells.

14 SOLAR ENERGY↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗
DOE OSTI2021

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe 2 Nanocrystals

CuInSe 2 nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more-toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states as well as unusual photophysics. In this work, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe 2 nanocrystals impart non-radiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs. electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (< 20 ps) followed by diphenylphosphine (< 500 ps) and finally tributylphosphine (> 2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are non-emissive.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Photonic Crystal Waveguides for >90% Light Trapping Efficiency in Luminescent Solar Concentrators

Luminescent solar concentrators are currently limited in their potential concentration factor and solar conversion efficiency by the inherent escape cone losses present in conventional planar dielectric waveguides. Here, we demonstrate that photonic crystal slab waveguides tailored for luminescent solar concentrator applications can exhibit >90% light trapping efficiency. This is achieved by use of quantum dot luminophores embedded within the waveguide that absorb light at photon energies corresponding to photonic crystal leaky modes that couple to incoming sunlight. The luminophores then emit at lower photon energies into photonic crystal bound modes that enable highly efficient light trapping in slab waveguides of wavelength-scale thickness. Photonic crystal waveguides thus nearly eliminate escape cone losses, and overcome the performance limitations of previously proposed wavelength-selective dielectric multilayer filters. We describe designs for hole-array and rod-array photonic crystals comprised of hydrogenated amorphous silicon carbide using CdSe/CdS quantum dots. Our analysis suggests that photonic crystal waveguide luminescent solar concentrators using these materials these can achieve light trapping efficiency above 92% and a concentration factor as high as 100.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Slow Equilibration between Spectroscopically Distinct Trap States in Reduced TiO 2 Nanoparticles

Understanding the nature of charge carriers in nanoscale titanium dioxide is important for its use in solar energy conversion, photocatalysis, and other applications. UV-irradiation of aqueous, colloidal TiO 2 nanoparticles in the presence of methanol gives highly reduced suspensions. Two distinct types of electron traps were observed and characterized by EPR and optical spectroscopies. The relative populations of the states depend on temperature, indicating a small energy difference, $ΔH$° = 3.0 ± 0.6 kcal/mol (130 ± 30 meV). Interconversion between the electron traps occurs slowly over the course of minutes to hours within the temperature range studied here, 0-50 °C. The slow time scale implies that interconversion involves changes in structure or stoichiometry, not just the movement of electrons. This occurrence of slow structural modification with changes in trap state occupancy is likely a general feature of reduced TiO 2 systems at thermodynamic equilibria or photostationary states and should be considered in the design of TiO 2 -containing devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Geologic Heterogeneity Controls on Trapping and Migration of CO 2

When CO 2 is injected into sedimentary basins, the fate of the buoyant CO 2 will be determined by how it interacts with the underlying geologic heterogeneities. Here we geologically print a cross-bedded pattern using two different bead sizes, and then conduct flow experiments to observe buoyant flow pathways, migration speed, and immobilized volumes. The amount of buoyant phase trapped under the heterogeneities is observed to vary by two orders of magnitude, with the controlling parameter being the size contrast between the coarse and fine grains that make up the structure. Furthermore, the results allow an estimate of heterogeneity trapping, and show how CO 2 trapping in aquifers can be experimentally evaluated before injection.

58 GEOSCIENCES↗
DOE OSTI2017

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born–Oppenheimer approximation, into the light-induced spin-state trapping dynamics of the prototypical [Fe(bpy)3]2+ compound by time-resolved X-ray absorption spectroscopy at sub-30-femtosecond resolution and high signal-to-noise ratio. The electronic decay from the initial optically excited electronic state towards the high spin state is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersion of the wave packet along the reaction coordinate reveals details of intramolecular vibronic coupling before a slower vibrational energy dissipation to the solution environment. These findings illustrate how modern time-resolved X-ray absorption spectroscopy can provide key information to unravel dynamic details of photo-functional molecules.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Tunable rainbow light trapping in ultrathin resonator arrays

Abstract Rainbow light trapping in plasmonic devices allows for field enhancement of multiple wavelengths within a single device. However, many of these devices lack precise control over spatial and spectral enhancement profiles and cannot provide extremely high localised field strengths. Here we present a versatile, analytical design paradigm for rainbow trapping in nanogroove arrays by utilising both the groove-width and groove-length as tuning parameters. We couple this design technique with fabrication through multilayer thin-film deposition and focused ion beam milling, which enables the realisation of unprecedented feature sizes down to 5 nm and corresponding extreme normalised local field enhancements up to 10 3 . We demonstrate rainbow trapping within the devices through hyperspectral microscopy and show agreement between the experimental results and simulation. The combination of expeditious design and precise fabrication underpins the implementation of these nanogroove arrays for manifold applications in sensing and nanoscale optics.

42 ENGINEERING↗
DOE OSTI2022

Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

14 SOLAR ENERGY↗
DOE OSTI2023

Magnetic flux trapping in hydrogen-rich high-temperature superconductors

Recent discoveries of superconductivity in various hydrides at high pressures have shown that a critical temperature of superconductivity can reach near-room-temperature values. However, experimental studies are limited by high-pressure conditions, and electrical transport measurements have been the primary technique for detecting superconductivity in hydrides. Here we implement a non-conventional protocol for the magnetic measurements of superconductors in a SQUID magnetometer and probe the trapped magnetic flux in two near-room-temperature superconductors H 3 S and LaH 10 at high pressures. Contrary to traditional magnetic susceptibility measurements, the magnetic response from the trapped flux is almost unaffected by the background signal of the diamond anvil cell due to the absence of external magnetic fields. The behaviour of the trapped flux generated under zero-field-cooled and field-cooled conditions proves the existence of superconductivity in these materials. We reveal that the absence of a pronounced Meissner effect is associated with the very strong pinning of vortices inside the samples. This approach can also be a tool for studying multiphase samples or samples that have a low superconducting fraction at ambient pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Signatures of moiré-trapped valley excitons in MoSe 2 /WSe 2 heterobilayers

The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect 1,2,3 , tunable Mott insulators 4,5 and unconventional superconductivity 6 . Moreover, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors 7,8,9 , but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe 2 )/tungsten diselenide (WSe 2 ) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, –15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle 7 . The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. Here, we report on opportunities to control two-dimensional moiré optics through variation of the twist angle.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Cooling the motion of diamond nanocrystals in a magneto-gravitational trap in high vacuum

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. Furthermore, we demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Large dielectric constant, high acceptor density, and deep electron traps in perovskite solar cell material CsGeI 3

Here we report that many metal halides that contain cations with the ns 2 electronic configuration have recently been discovered as high-performance optoelectronic materials. In particular, solar cells based on lead halide perovskites have shown great promise as evidenced by the rapid increase of the power conversion efficiency. In this paper, we show density functional theory calculations of electronic structure and dielectric and defect properties of CsGeI 3 (a lead-free halide perovskite material). The potential of CsGeI 3 as a solar cell material is assessed based on its intrinsic properties. We find anomalously large Born effective charges and a large static dielectric constant dominated by lattice polarization, which should reduce carrier scattering, trapping, and recombination by screening charged defects and impurities. Defect calculations show that CsGeI 3 is a p-type semiconductor and its hole density can be modified by varying the chemical potentials of the constituent elements. Despite the reduction of long-range Coulomb attraction by strong screening, the iodine vacancy in CsGeI3 is found to be a deep electron trap due to the short-range potential, i.e., strong Ge–Ge covalent bonding, which should limit electron transport efficiency in p-type CsGeI 3 . This is in contrast to the shallow iodine vacancies found in several Pb and Sn halide perovskites (e.g., CH 3 NH 3 PbI 3 , CH 3 NH 3 SnI 3 , and CsSnI 3 ). The low-hole-density CsGeI 3 may be a useful solar absorber material but the presence of the low-energy deep iodine vacancy may significantly reduce the open circuit voltage of the solar cell. Still, on the other hand, CsGeI 3 may be used as an efficient hole transport material in solar cells due to its small hole effective mass, the absence of low-energy deep hole traps, and the favorable band offset with solar absorber materials such as dye molecules and CH 3 NH 3 PbI 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

On-line installation of the Superallowed Transition Beta-Neutrino Decay Ion Coincidence Trap

The Cabibbo-Kobayashi-Maskawa quark mixing matrix currently does not satisfy unitarity at the 2σ-level. This could be the result of an inaccurate value of one or both of its largest matrix elements V us and V ud . In the case of V ud , the most precise measurement is obtained from the f t -value measurements of superallowed beta-transitions between 0 + states. The accuracy of this determination can, in turn, be tested by extracting V ud in other transitions including superallowed transitions between mirror nuclei. The Superallowed Transition Beta-Neutrino Decay Ion Coincidence Trap (St. Benedict) is currently under construction at the Nuclear Science Laboratory of the University of Notre Dame to perform such a determination, with the goal of shedding more light on this tension with unitarity. St. Benedict will take a radioactive ion beam produced by TwinSol , thermalize it in a large volume gas catcher, then transport it in two separate differentially-pumped volumes using a radio-frequency (RF) carpet and a radio-frequency quadrupole (RFQ) ion guide before injecting it in an RFQ trap to create cool ion bunches for injection in the measurement Paul trap. In this paper, we detail the installation of the beam preparation components of St. Benedict, and present the results of the first RIBs successfully stopped and extracted from its gas catcher.

Brodeur, M.↗
DOE OSTI2014

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of traps refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

Trap states in Al{sub 0.55}Ga{sub 0.45}N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al{sub 2}O{sub 3}/Al{sub 0.55}Ga{sub 0.45}N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant of (0.09–0.12) μs were found in S-HEMTs, and electron tunneling rather than emission was deemed to be the dominant de-trapping mechanism due to the high electric field in high Al content barrier. The density of surface states evaluated in S-HEMTs was (1.02–4.67)×10{sup 13} eV{sup −1}·cm{sup −2}. Al{sub 2}O{sub 3} gate insulator slightly reduced the surface states, but introduced low density of new traps with time constant of (0.65–1.29) μs into MOS-HEMTs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Deep traps and photo-electric properties of p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O heterojunction

In the paper, the photoluminescence (PL) measurements, current–voltage–temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn{sub 1−x}Mg{sub x}O heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 Ω cm by the plasma-assisted molecular beam epitaxy technique. A radio-frequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content ∼10%. Besides the excitonic Zn{sub 0.9}Mg{sub 0.1}O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum were explained using the Anderson model of a HJ.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗