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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers

Monolithic two-dimensional arrays of GaAs/AlGaAs diode lasers with light emission normal to the surface have been obtained by fabricating edge-emitting quantum-well lasers coupled with external mirrors that deflect the radiation from the laser facets by 90 degrees. Linear arrays of GaAs/AlGaAs devices in which one of the laser facets was cleaved while the other facet and an adjacent 45 degree deflector were formed by ion-beam-assisted etching (IBAE) have been reported. For the arrays reported in this section, IBAE was used to form all of the laser facets and the deflecting mirrors. A mass transport process of the type employed to fabricate two-dimensional arrays of GaInAsP/InP lasers coupled with deflecting mirrors is not known for AlGaAs.

Source record↗
NASA NTRS1988

Sensor technology

The objective is to provide necessary expertise and technology to advance space remote sensing of terrestrial, planetary, and galactic phenomena through the use of electromagnetic and electro-optic properties of gas, liquid, and solid state materials technology. The Sensor Technology Program is divided into two subprograms: a base research and development part and a Civil Space Technology Initiative (CSTI) part. The base research and development consists of research on artificially grown materials such as quantum well and superlattice structure with the potential for new and efficient means for detecting electromagnetic phenomena. Research is also being done on materials and concepts for detector components and devices for measuring high energy phenomena such as UV, X-, and gamma rays that are required observables in astrophysis and solar physics missions. The CSTI program is more mission driven and is balanced among four major disciplines: detector sensors; submillimeter wave sensors; LIDAR/DIAL sensors; and cooler technology.

Sokoloski, Martin M.↗
NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗
NASA NTRS1988

Extended fine structures in the electron energy loss spectrum of InAs

The possibility of using electron energy loss fine structure (EELFS) for the characterization of thin pseudomorphic quantum wells of InAs and GaAs(100) is investigated. It is shown that the EELFS technique can yield reliable radial distribution functions for bulk InAs, provided beam-induced sample degradation is controlled stringently. Additional improvements in the data collection procedures, including better control of the sample condition, are required as well as more detailed work on separating contributions from multiple edges in the data analysis.

Schowengerdt, F. D.↗
NASA NTRS1989

Experimental results of a high Q quasioptical reflection cavity

A quasi-optical reflection cavity intended to be used as the resonant load of a submillimeter wavelength oscillator has been designed, constructed, and tested. The resonator consists of three elements in cascade: a high Q, high finesse folded Fabry-Perot resonator, a lower Q, low finesse Fabry-Perot resonator, and a Littrow mounted diffraction grating. The resonator exhibits a Q of 6600 and 2.5 dB of loss at 63 GHz. The design can be scaled to 1 THz, where waveguide structures become impractical, to serve as the resonator for high frequency quantum well resonant tunneling device oscillators.

Lee, Karen A.↗
NASA NTRS1989

Laser applications in meteorology and earth and atmospheric remote sensing; Proceedings of the Meeting, Los Angeles, CA, Jan. 16-18, 1989

Various papers on laser applications in meteorology and earth and atmospheric remote sensing are presented. The individual topics addressed include: solid state lasers for the mid-IR region, tunable chromium lasers, GaInAsSb/AlGaAsSb injection lasers for remote sensing applications, development and design of an airborne autonomous wavemeter for laser tuning, fabrication of lightweight Si/SiC lidar mirrors, low-cost double heterostructure and quantum-well laser array development, nonlinear optical processes for the mid-IR region, simulated space-based Doppler lidar performance in regions of backscatter inhomogeneities, design of CO2 recombination catalysts for closed-cycle CO2 lasers, density measurements with combined Raman-Rayleigh lidar, geodynamics applications of spaceborne laser ranging, use of aircraft laser ranging data for forest mensuration, remote active spectrometer, multiwavelngth and triple CO2 lidars for trace gas detection, analysis of laser diagnostics in plumes, laser atmospheric wind sounder, compact Doppler lidar system using commercial off-the-shelf components, and preliminary design for a laser atmospheric wind sounder.

Sokoloski, Martin M.↗
NASA NTRS1990

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Efron, Uzi↗
NASA NTRS1990

Long-wavelength infrared detection in a Kastalsky-type superlattice structure

The first successful demonstration of long-wavelength infrared (LWIR) detection with a Kastalsky-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10 microns in very good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. The response at 83 K is about 50 percent of the response at 24 K.

Byungsung, O.↗
NASA NTRS1990

LWIR detector requirements for low-background space applications

Detection of cold bodies (200 to 300 K) against space backgrounds has many important applications, both military and non-military. The detector performance and design characteristics required to support low-background applications are discussed, with particular emphasis on those characteristics required for space surveillance. The status of existing detector technologies under active development for these applications is also discussed. In order to play a role in future systems, new, potentially competing detector technologies such as multiple quantum well detectors must not only meet system-derived requirements, but also offer distinct performance or other advantages over these incumbent technologies.

Deluccia, Frank J.↗
NASA NTRS1990

LWIR detector research in InAsSb/InAs

The InAsSb/InSb strained-layer system forms a type-II superlattice in the Sb-rich region of the phase diagram. The band gap of InAsSb/InSb strained-layer superlattices grown on lattice-matched buffers can be varied continuously to produce semiconducting systems with band gaps ranging from that of InSb (0.23 eV with an absorption edge at 5.5 microns at 77 K) to 0. The semiconductor to semimetal transition occurs at As concentrations of approximately 33 percent, with the precise value dependent upon the strain and quantum well dimensions. At higher As content, the system is a semimetal. The authors fabricated photovoltaic detectors with high D asterisk at 77 K at wavelengths beyond 10 microns, and both photovoltaic and photoconductive detectors have been demonstrated with response to 15 microns. The photoconductive detectors exhibit gain of up to 100. Details of the materials growth, studies of the band structure and properties, device processing and the detector performance observed to date in these systems are discussed.

Peercy, Paul S.↗
NASA NTRS1990

Linear laser diode arrays for improvement in optical disk recording

The development of individually addressable laser diode arrays for multitrack magneto-optic recorders for space stations is discussed. Three multi-element channeled substrate planar (CSP) arrays with output power greater than 30 mW with linear light vs current characteristics and stable single mode spectra were delivered to NASA. These devices have been used to demonstrate for the first time the simultaneous recording of eight data tracks on a 14-inch magneto-optic erasable disk. The yield of these devices is low, mainly due to non-uniformities inherent to the LPE growth that was used to fabricate them. The authors have recently developed the inverted CSP, based on the much more uniform MOCVD growth techniques, and have made low threshold quantum well arrays requiring about three times less current than the CSP to deliver 30 mW CW in a single spatial mode. The inverted CSP is very promising for use in space flight recorder applications.

Alphonse, G. A.↗
NASA NTRS1991

A field induced guide-antiguide modulator of GaAs-AlGaAs

A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.

Huang, T. C.↗
NASA NTRS1991

Lateral modes of broad area semiconductor lasers - Theory and experiment

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Lang, Robert J.↗
NASA NTRS1991

22 W coherent GaAlAs amplifier array with 400 emitters

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Krebs, D.↗
NASA NTRS1991

Theoretical performance of novel multipliers at millimeter and submillimeter wavelengths

A theoretical comparison of various low and high order multipliers for 200 GHz and 1 THz has been carried out. Novel diodes including single barrier varactors, barrier-intrinsic-n(+)diodes and high electron mobility varactors are shown to have excellent theoretical performance, comparable or better than the conventional Schottky varactors for single and double diode frequency multipliers at millimeter and submillimeter wavelengths, whereas quantum well diodes, since they suffer from high resistive losses, are shown to be less attractive. In comparison to the conventional Schottky varactor, these new diodes have some potential advantages in their characteristics such as a stronger nonlinearity or a special symmetry. For future optimization some general comments on these advantages as well as other factors affecting multiplication are given.

Tolmunen, Timo J.↗
NASA NTRS1992

Pseudomorphic InxGa1-xAs Surface-Emitting Lasers

Solid-state lasers of new type contain pseudomorphic In0.15Ga0.85As single-quantum-well (SQW) active layers sandwiched between thinner layers of GaAs that, in turn, are sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs. Lasers emit edgewise as other solid-state lasers, or made to emit perpendicularly to their surfaces by use of integrated 45 degree beam deflectors that deflect edge-emitted light. Suitable for incorporation into optoelectronic integrated circuits implementing optical interconnection and parallel processing of data.

Kim, Jae H.↗
NASA NTRS1992

Growth of III-V films by control of MBE growth front stoichiometry

For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

Grunthaner, Frank J.↗
NASA NTRS1992

High power GaInAs lasers with distributed Bragg reflectors

Single-mode strained-layer lasers have been fabricated which use buried second-order gratings for distributed Bragg reflectors. The lasers contain a strained GaInAs quantum well in the active region and operate in an edge emitting fashion with CW powers in excess of 110 mW. Single longitudinal and transverse mode operation is maintained at about 971.9 nm up to 42 mW. Total power conversion efficiencies as high as 28 percent have been observed. The longitudinal and transverse mode behavior is stable under 90 percent amplitude modulation with 50 percent duty cycle pulses at 10 kHz and 10 MHz. Preliminary life-test data at 40 C also indicate room temperature lifetimes in excess of 45,000 hours.

O'Brien, S.↗