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At least 649 records · Page 36

A Computationally Improved Heuristic Algorithm for Transmission Switching Using Line Flow Thresholds for Load Shed Reduction

We present a computationally improved heuristic algorithm for transmission switching (TS) to recover load shed. Research from the past showed that changing power system topology may control power flows and remove line congestion. Hence, TS may reduce the required load shed. One of the main challenges is to find a potential TS candidate in a suitable time. Here, we propose a novel heuristic method that is capable of finding the potential TS candidate faster than existing algorithms in literature. The proposed method is compatible with both the AC and DC optimal power flows (OPF). Three metrics are used to compare the proposed algorithm with the state-of-the-art from literature to show the speedup and accuracy achieved. The proposed method is implemented on the IEEE 30-bus system, PEGASE 89-bus system, IEEE 118-bus system, and Polish 2383- bus system. The results on the large-scale Polish 2383-bus system shows that the proposed algorithm is scalable to large real-world systems. Parallel computing is implemented to further improve the computational performance of the proposed algorithm.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Maximum Switching Throughput Density Estimator

SAND2024-11125O The Maximum Switching Throughput Density Estimator software performs a simple analysis that estimates the maximum logic switching throughput density that’s achieved in various CMOS technology nodes on the International Roadmap for Devices and Systems. This software utilizes simple device models and optimization techniques, performing a simple sweep over a range of possible logic supply voltages, and analytically calculating the maximum switching frequency for the given logic voltage that meets the power density constraint. It does this by using simple models of power dissipation in conventional and fully adiabatic switching. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

Frank, Michael↗

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗

Coupled-DC Module-Based Photovoltaic System With Power Mismatch-Tolerated Modulation

Here, this article presents a coupled-DC power module-based cascaded multilevel converter integrating utility-scale photovoltaic (PV) generations (coupled-DC-link power module (CDPM)-PV). CDPM-PV inherits merits such as modular structure, distributed maximum power point tracking (MPPT), direct distribution grid access, from cascaded H-bridge-based PV (CHB-PV) system. But, it supplies more flexible power routes than CHB-PV, through coupling different DC-links. Power routes are intended for enlarging the entire operating range including conditions of active power mismatch arising from nonideal elements such as partial shading and parameter variations. The system construction with its self-balancing principle is first introduced. Switching states for different operating regions are then derived based on the principle of easing implementation. Based on these, a modulation strategy including initial switching pattern selection and coordinated power routing is proposed to allow module-mismatches. Operating ranges are also analyzed and compared with conventional CHB-PV. Simulation results of a 3-MW/13.8-kV system developed in MATLAB/Simulink platform, and experiment results based on a 2.4-kW/311-V setup are presented and have demonstrated that the CDPM-PV topology with proposed modulation strategy can not only ride through a larger range of module mismatches, but also improve solar power utilization and system efficiency owing to noncompromised MPPT.

14 SOLAR ENERGY↗

High-Voltage Pulsed Power Generator for Beam Injection Systems

Beam injection systems in hadron colliders require kickers generating ±50 kV peak voltages into a 50 Ω impedance, with peak currents of 1000 A and sub-10 ns rise and fall times. This paper presents a novel high-voltage pulse power generator utilizing a distributed pulser architecture. It combines gallium nitride (GaN) transistors in a Marx topology with an inductive adder, achieving nanosecond-scale switching speeds and high-power efficiency. Compared to other solutions such as based on MOSFETs or fast ionization dynistors, our development offers superior peak and average power performance, reduced system complexity, and enhanced reliability, marking a significant step forward in high-voltage pulse generation for accelerator applications.

Smirnov, Alexander (ORCID:0000000280631691)↗

The Impact of Inverter Dead-Time in Single-Phase Wireless Power Transfer Systems

In this paper, the effect of the dead-time on a single-phase wireless power transfer system is studied in detail. In practice, the dead-time is always placed between the complementary switching pulses of the inverter phase-leg. At higher operating frequencies, the dead-time issues in the resonant inverter become critical, especially as the power level increases. The detailed analysis of the dead-time on a wireless power transfer system is discussed for different operating conditions of the inverter duty-cycle and power factor. The switching characteristics of the wireless power transfer system inverter are analyzed, and the notch phenomenon that appears at the output of the inverter is also discussed. A notch equation based on the observations is derived to predict the notch occurrence during the system operation. Furthermore, the mathematical expressions are presented for different notch conditions. Subsequently, the effect of the notches on the sensitivity and the power transfer of the series-series compensated wireless power transfer system is analyzed. Finally, the approach is verified experimentally on an 8 kW wireless power transfer system prototype, and the results are compared with the theoretical analysis.

42 ENGINEERING↗

Diode laser-pumped solid-state lasers

An evaluation is made of the consequences for solid-state lasers of novel diode laser-pumping technology. Diode laser-pumped neodymium lasers have operated at an electrical-to-optical efficiency of 10 percent in a single spatial mode, with linewidths of less than 10 kHz, and with a spectral power brightness sufficiently great to allow frequency extension by harmonic generation in nonlinear crystals; this has yielded green and blue sources of coherent radiation. Q-switched operation with kW peak powers and mode-locked operation with 10-picosec pulse widths have also been demonstrated. All-solid-state lasers at prices comparable to those of current flash-lamp-pumped laser systems are foreseen, as are power levels exceeding 1 kW, for coherent radar, global satellite sensing, and micromachining.

Byer, Robert L.↗

Transistor current and voltage limiting switch

Limiting circuit protects the main power supply of electronic modules and limits the current drawn by each module should a short circuit occur. It limits current within one mA when used with direct current of either polarity, or with pulse or ac power sources from direct current to 100 kHz.

Hilbert, E. E.↗

JANTX1N5623 switching diode

Report describes effects of power and temperature overstress on Semtech and Micro Semiconductor devices. Only two Semtech diodes failed catastrophically. Testing on Micro Semiconductor devices stopped because failure limit was reached. Micro diodes suffered lead separation.

Source record↗

Modeling and Characterization of Surface Discharges in Insulating Material for Spacers: Electrode Shape, Discharge Mode, and Revision of the Creepage Concept

In the design of MV AC and DC spacers, the predominant factors are surface and interface conditions. Design is generally carried out on specifications and standards which are based on long-term experience and lab testing. However, the diffusion of power electronics with a trend to increase electric field, switching frequency, and rise time to achieve higher power density calls for an innovative, global approach to optimized insulation system design. A new methodology, based on field simulation, discharge modeling, and partial discharge inception measurements, called the three-leg approach, can form the basis to optimize insulation design for any type of supply voltage waveform. This paper focuses on the influence of the type of electrode on the inception and phenomenology of surface discharges and, as a consequence, on the interpretation of the results used for application of the three-leg approach. It is demonstrated that a typical electrode system used for insulating material testing can generate both gas and surface discharges at the triple point, when the electrodes have a smooth profile that is used to avoid corona or flashover. Hence, testing partial discharge may not provide a straightforward indication of the surface discharge inception and, thus, be partially misleading for insulation design. Another takeover is that such analysis must benefit from PD testing tools endowed with analytics able to provide automatic identification of the type of defect generating PD, i.e., internal, surface, and corona, since design and remedy actions can be taken, and adequate insulating materials developed, only knowing the type of source generating PD. Hence, testing partial discharge may not provide a straightforward indication of surface discharge inception and, thus, be partially misleading for insulation design. In addition to the importance of the three-leg approach to favor reliable and optimized design of insulation systems, there is a clear need to have a PD testing tool endowed with analytics. It should preferably be able to provide automatic identification of the type of defect generating PD, i.e., internal, surface, and corona.

36 MATERIALS SCIENCE↗

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗

Command Interface ASIC - Analog Interface ASIC Chip Set

A command interface application-specific integrated circuit (ASIC) and an analog interface ASIC have been developed as a chip set for remote actuation and monitoring of a collection of switches, which can be used to control generic loads, pyrotechnic devices, and valves in a high-radiation environment. The command interface ASIC (CIA) can be used alone or in combination with the analog interface ASIC (AIA). Designed primarily for incorporation into spacecraft control systems, they are also suitable for use in high-radiation terrestrial environments (e.g., in nuclear power plants and facilities that process radioactive materials). The primary role of the CIA within a spacecraft or other power system is to provide a reconfigurable means of regulating the power bus, actuating all valves, firing all pyrotechnic devices, and controlling the switching of power to all switchable loads. The CIA is a mixed-signal (analog and digital) ASIC that includes an embedded microcontroller with supporting fault-tolerant switch control and monitoring circuitry that is capable of connecting to a redundant set of interintegrated circuit (I(sup 2)C) buses. Commands and telemetry requests are communicated to the CIA. Adherence to the I(sup 2)C bus standard helps to reduce development costs by facilitating the use of previously developed, commercially available components. The AIA is a mixed-signal ASIC that includes the analog circuitry needed to connect the CIA to a custom higher powered version of the I(sup 2)C bus. The higher-powered version is designed to enable operation with bus cables longer than those contemplated in the I(sup 2)C standard. If there are multiple higher-power I(sup 2)C-like buses, then there must an AIA between the CIA and each such bus. The AIA includes two identical interface blocks: one for the side-A I(sup 2)C clock and data buses and the other for the side B buses. All the AIAs on each side are powered from a common power converter module (PCM). Sides A and B of the I(sup 2)C buses are electrically isolated from each other (see figure). They are also isolated from the CIA by use of transformer coupling of signals between the AIA blocks and the CIA.

Ruiz, Baldes↗

Microfluidic Devices for Chemical and Biochemical Analysis in Microgravity

One often touted benefit of "Lab-on-a-Chip" devices is their potential for use in remote environments. The ultimate remote environment is outer space, and NASA has multiple needs in the area of analytical sensing capability in such an environment. In particular, we are interested in integrating microfluidic devices with NASA bioreactor systems. In such an integrated system, the microfluidic device will serve as a biosensor and be used for both feedback control and for detecting various bioproducts produced by cells cultured in the NASA bioreactors. As a first step in demonstrating the ability of microfluidic devices to operate under the extreme environmental conditions found in outer space, we constructed a portable, battery operated platform for testing under reduced gravity conditions on a NASA KC-135 reduced gravity research aircraft, (AKA "the vomit comet"). The test platform consisted of a microchip, two 0-8kV high voltage power supplies, a high voltage switch, a solid-state diode-pumped green laser, a channel photomultiplier, and an inertial mass measurement unit, all under the control of a laptop computer and powered by 10 D-cell alkaline batteries. Over the course of 4 KC-135 flights, 1817 fast electrophoretic separations of 4 amino acids and/or proteins were performed in a variety of gravitational environments including zero-G, Martian-G, lunar-G, and 2-G. Results from these experiments will be presented and discussed.

Roman, Gregory T.↗

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗

Coupling an induction motor type generator to ac power lines

A system for coupling an induction motor type generator to an A.C. power line includes an electronic switch means that is controlled by a control system and is regulated to turn on at a relatively late point in each half cycle of its operation. The energizing power supplied by the line to the induction motor type generator is decreased and the net power delivered to the line is increased.

Nola, F. J.↗

Improved Two-Phase Switching Regulator

Coupled-inductor polyphase regulator has better efficiency and lower inductor losses. Improved two-phase switching regulator employs negative coupling between inductors to achieve better power-to-weight ratio while reducing peak switching currents and inductor losses. Improvement of about 35 percent using new technique.

Rippel, W. E.↗

Design for megavolt inverse-pinch plasma switch

To meet the requirements for the output switch of an ultra-high-power (greater than 30 GW) pulser, an upgrading design for an inverse-pinch plasma switch (INPIS) is considered. The hold-off voltage of 1 MV is met by adopting multistage rim-fire electrodes and using SF6 as the dielectric gas of the switch. The inductance and capacitance of the switch, which are restricted by the short rise-time (less than 0.1 microsec) requirement, were met by adjusting the dimensions of the coaxial electrodes of the switch. The input/output transmission lines attached to the switch will be immersed in oil to meet the high voltage insulation and impedance-matching requirements. Since the forwarding current is relatively low with respect to the switch capability, the lifetime of the switch is expected to exceed the requirement of 10,000 shots.

Lee, Ja H.↗