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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1980

Satellite power system (SPS) magnetron tube assessment study

Taks performed to extend the data base and to define a technology development program for the magnetron directional amplifier for the SPS are reviewed. These include: (1) demonstrating the tracking of phase and amplitude of the microwave output to phase and amplitude references; (2) expanding the range of power over which the directional amplifier will operate; (3)recognizing the importance of amplitude control in overall system design and in simplifying power conditioning; (4) developing a preliminary design for the overall architecture of the power module; (5) demonstrating magnetron starting using the amplitude control system; (6) mathematically modelling and performing a computerized study of the pyrolytic graphite radiating fin; (7) defining the mass of the magnetic circuit for the SPS tube; (8) noise measurement; (9) achieving harmonic suppression by notch reflection filters; (10) estimating the mass of the transmitting antenna; (11) developing a magnetron package with power generation, phase control, and power condition functions; and (12) projecting magnetron package characteristics.

Source record↗
NASA NTRS1993

Space applications of superconducting microwave electronics at NASA Lewis Research Center

Since the discovery of high temperature superconductivity in 1987, NASA Lewis Research Center has been involved in efforts to demonstrate its advantages for applications involving microwave electronics in space, especially space communications. The program included thin film fabrication by means of laser ablation. Specific circuitry which was investigated includes microstrip ring resonators at 32 GHz, phase shifters which utilize a superconducting, optically activated switch, an 8x8 32 GHz superconducting microstrip antenna array, and an HTS-ring-resonator stabilized oscillator at 8 GHz. The latter two components are candidates for use in space experiments which are described in other papers. Experimental data on most of the circuits are presented as well as, in some cases, a comparison of their performance with an identical circuit utilizing gold or copper metallization.

Leonard, R. F.↗
NASA NTRS2003

Measured Propagation Characteristics of Coplanar Waveguide on Semi-Insulating 4H-SiC Through 800 K

Wireless sensors for high temperature industrial applications and jet engines require RF transmission lines and RF integrated circuits (RFICs) on wide bandgap semiconductors such as SiC. In this paper, the complex propagation constant of coplanar waveguide fabricated on semiinsulating 4H-SiC has been measured through 813 K. It is shown that the attenuation increases 3.4 dB/cm at 50 GHz as the SiC temperature is increased from 300 K to 813 K. Above 500 K, the major contribution to loss is the decrease in SiC resistivity. The effective permittivity of the same line increases by approximately 5 percent at microwave frequencies and 20 percent at 1 GHz.

Ponchak, George E.↗
DOE OSTI2025

Low-phase-noise surface-acoustic-wave oscillator using an edge mode of a phononic band gap

Low-phase-noise microwave-frequency integrated oscillators provide compact solutions for various applications in signal processing, communications, and sensing. Surface acoustic waves (SAWs), featuring orders-of-magnitude shorter wavelength than electromagnetic waves at the same frequency, enable integrated microwave-frequency systems with much smaller footprint on chip. SAW devices also allow higher-quality (Q) factors than electronic components at room temperature. Here, we demonstrate a low-phase-noise gigahertz-frequency SAW oscillator on 128°Y-cut lithium niobate, where the SAW resonator occupies a footprint of 0.05 mm 2 . Leveraging phononic crystal band-gap-edge modes to balance between Q factors and insertion losses, our 1-GHz SAW oscillator features a low phase noise of -132.5 dBc/Hz at a 10-kHz offset frequency and an overlapping Hadamard deviation of 6.5 × 10 -10 at an analysis time of 64 ms. The SAW resonator-based oscillator holds high potential in developing low-noise sensors and acousto-optic integrated circuits.

42 ENGINEERING↗
DOE OSTI2025

A scanning resonator for probing quantum coherent devices

Superconducting resonators with high quality factors are extremely sensitive detectors of the complex impedance of materials and devices coupled to them. This capability has been used to measure losses in multiple different materials and, in the case of circuit quantum electrodynamics (circuit QED), has been used to measure the coherent evolution of multiple different types of qubits. Here, we report on the implementation of a scanning resonator for probing quantum coherent devices. Our scanning setup enables tunable coherent coupling to systems of interest without the need for fabricating on-chip superconducting resonators. We measure the internal quality factor of our resonator sensor in the single-photon regime to be >104 and demonstrate capacitive imaging using our sensor with zeptoFarad sensitivity and micron spatial resolution at milliKelvin temperatures. We then use our setup to characterize the energy spectrum and coherence times of multiple transmon qubits with no on-chip readout circuitry. Our experiments introduce a new tool for using circuit QED to measure existing and proposed qubit platforms.

47 OTHER INSTRUMENTATION↗
NASA NTRS1971

Advanced microelectronics research for space applications, phase 2

Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.

Gaertner, W. W.↗
NASA NTRS1995

NASA Tech Briefs, November 1995

The contents include: 1) Mission Accomplished; 2) Resource Report: Marshall Space Flight Center; 3) NASA 1995 Software of the Year Award; 4) Microbolometers Based on Epitaxial YBa2Cu3O(sub 7-x) Thin Films; 5) Garnet Random-Access Memory; 6) Fabrication of SNS Weak Links on SOS Substrates; 7) High-Voltage MOSFET Switching Circuit; 8) Asymmetric Switching for a PWM H-Bridge Power Circuit; 9) Better Ohmic Contacts for InP Semiconductor Devices; 10) Low-Bandgap Thermovoltaic Materials and Devices; 11) Digital Frequency-Differencing Circuit; 12) Imaging Magnetometer; 13) Computer-Assisted Monitoring of a Complex System; 14) Buffered Telemetry Demodulator; 15) Compact Multifunction Inspection Head; 16) Optical Detection of Fractures in Ceramic Diaphragms; 17) Eddy-Current Detection of Cracks in Reinforced Carbon/Carbon; 18) Apparent Thermal Conductivity of Multilayer Insulation; 19) Optimizing Misch-Metal Compositions in Metal Hydride Anodes; 20) Device for Sampling Surface Contamination; 21) Probabilistic Failure Assessment for Fatigue; 22) Probabilistic Fatigue and Flaw-Propagation Analysis; 23) Windows Program for Driving the TDU-850 Printer; 24) Subband/Transform MATLAB Functions for Processing Images; 25) Computing Equilibrium Chemical Compositions; 26) Program Processes Thermocouple Readings; 27) ICAN-Second-Generation Integrated Composite Analyzer; 28) Integrated Composite Analyzer with Damping Capabilities; 29) Computing Efficiency of Transfer of Microwave Power; 30) Program Calculates Power Demands of Electronic Designs; 31) Cost-Estimation Program; 32) Program Estimates Areas Required by Electronic Designs; 33) Program to Balance Mapped Turbopump Assemblies; 34) BiblioTech; 35) Controlling Mirror Tilt With a Bimorph Actuator; 36) Burst-Disk Device Simulates Effect of Pyrotechnic Device; 37) Bearing-Mounting Concept Accommodates Thermal Expansion; 38) Parallel-Plate Acoustic Absorbers for Hot Environments; 39) Adjustable-Length Strut Withstands Large Cyclic Loads; 40) Tool Indicates Contact Angles in Bearing Raceways; 41) Gravity Slides With Magnetic Braking; 42) High-Torque, Lightweight, Pneumatically Driven Wrench for Small Spaces; 43) Device for Testing Compatibility of an O-Ring; 44) Magnetic Heat Pump Containing Flow Diverters; 45) Variable-Tilt Helicopter Rotor Mast; 46) "Beach-Ball" Robotic Rovers; 47) Apparatus Would Measure Temperatures of Ball Bearings; 48) Flexible Borescope for Inspecting Ducts; 49) Texturing Copper To Reduce Secondary Emission of Electrons; 50) Automated Laser Cutting in Three Dimensions; 51) Algorithm Helps Monitor Engine Operation; 52) Flexible Revision of Data-Processing Communications; 53) Software for Managing the Use of Land; 54) Thermal Strap Increases Cryocooling Efficiency; 55) Reversible Nut With Engagement Indication; 56) Control Algorithms for Kinematically Redundant Manipulators; 57) Computed Hydrogen-Flow Splits in a Rocket Engine; 58) Pressure and Thermal Modeling of Rocket Launches; 59) Field of View of a Spacecraft Antenna: Analysis and Software; 60) Digital Controller for Laser-Beam-Steering Subsystem; 61) More About Beam-Steering Subsystem for Laser Communication; 62) Digital Controller for Laser-Beam-Steering Subsystem: Part 2; 63) Interface Circuit Board for Space-Shuttle Communications; 64) Automated Planning of Spacecraft Telecommunications; 65) Artifacts of Spectral Analysis of Instrument Readings; 66) Neural-Network Controller for Vibration Suppression; 67) Adaptive Finite-Element Computation in Fracture Mechanics; 68) Attitude Control for the Cassini Spacecraft; 69) Analytical Model for Fluid Dynamics in a Microgravity Environment; 70) Study of Rocket-Engine Joints Bonded by NVCU/NARloy-Z; 71) Improved Silicon Nitride for Advanced Heat Engines; 72) Parameters for Welding Aluminum/Lithium Alloys; 73) Lightweight Composite Intertank Structure; 74) Foil Patches Seal Small Vacuum Leaks; 75) Data Base on Cables and Connectors; 76) Effect of Clock Mode on Radiation Hardnessf an ADC; and 77) Fault-Tolerant Control for a Robotic Inspection System.

Source record↗
NASA NTRS2009

Very Large Area/Volume Microwave ECR Plasma and Ion Source

The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cyclotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applications or for plasma processing applications such as etching, deposition, ion milling and ion implantation. The large area source is at least five times larger than the 12-inch wafers being processed to date. Its rectangular shape makes it easier to accommodate to materials processing than sources that are circular in shape. The source itself represents the largest ECR ion source built to date. It is electrodeless and does not utilize electromagnets to generate the ECR magnetic circuit, nor does it make use of windows.

Foster, John E.↗
NASA NTRS2001

Measurements of Beam Coupling in the Marshall Magnetic Mirror Device

Experimental investigations of the coupling of an electron beam into a magnetically confined plasma have been undertaken at the Marshall Space Flight Center using the Marshall Magnetic Mirror (M3) system. The M3 system is composed of the following: two magnet coils; a cylindrical vacuum vessel; microwave source; and electron beam source. The magnet coils, which form the magnetic mirror, have an inner diameter of 25.4 cm and an outer diameter of 50.8 cm. The coils are composed of 9 coil segments with 33 turns in each segment. Each coil segment is connected in series. To create the target plasma, a 2 kW microwave source (2.45 gHz) is coupled into the vacuum chamber via waveguide. The electron beam source is a hollow cathode device created by the EPL Corporation. The hollow cathode is capable of producing a 50 amp beam with a pulse length of 1 second. It is also capable of continuous operation at 5 amps. The hollow cathode is mounted on one end of the cylindrical vacuum vessel 24 cm outside of a magnet coil. A current sensor is placed in the hollow cathode keeper bias circuit to measure emission current.

Schneider, T. A.↗
NASA NTRS2004

The Direct Digital Modulation of Traveling Wave Tubes

Traveling wave tube (TWT) technology, first described by Rudolf Kompfner in the early 1940s, has been a key component of space missions from the earliest communication satellites in the 1960s to the Cassini probe today. TWTs are essentially signal amplifiers that have the special capability of operating at microwave frequencies. The microwave frequency range, which spans from approximately 500 MHz to 300 GHz, is shared by many technologies including cellular phones, satellite television, space communication, and radar. TWT devices are superior in reliability, weight, and efficiency to solid-state amplifiers at the high power and frequency levels required for most space missions. TWTs have three main components -an electron gun, slow wave structure, and collector. The electron gun generates an electron beam that moves along the length of the tube axis, inside of the slow wave circuit. At the same time, the inputted signal is slowed by its travel through the coils of the helical slow wave circuit. The interaction of the electron beam and this slowed signal produces a transfer of kinetic energy to the signal, and in turn, amplification. At the end of its travel, the spent electron beam moves into the collector where its remaining energy is dissipated as heat or harnessed for reuse. TWTs can easily produce gains in the tens of decibels, numbers that are suitable for space missions. To date, however, TWTs have typically operated at fixed levels of gain. This gain is determined by various, unchanging, physical factors of the tube. Traditionally, to achieve varying gain, an input signal s amplitude has had to first be modulated by a separate device before being fed into the TWT. This is not always desirable, as significant distortion can occur in certain situations. My mentor, Mr. Dale Force, has proposed an innovative solution to this problem called direct digital modulation . The testing and implementation of this solution is the focus of my summer internship. The direct digital modulation of a TWT removes the need for a separate amplitude modulation device. Instead, different levels of gain are achieved by varying the electron beam current. The lower the current, the less kinetic energy is available to be transferred to the signal. To vary the current, a grid is placed in-between the electron gun and the slow wave circuit. By changing the voltage across the grid, the electron beam current can be controlled. Grid technology has mostly been used in pulse applications such as radar, where only two voltage states are necessary. For direct digital modulation, however, a continuous range of voltages is required.

Radhamohan, Ranjan S.↗
DOE OSTI2024

Understanding the Phase of Responsivity and Noise Sources in Frequency-Domain Multiplexed Readout of Transition Edge Sensor Bolometers

Abstract Cosmic microwave background (CMB) experiments have deployed focal planes with $$\mathcal {O}(10^{4})$$ O ( 10 4 ) transition edge sensor (TES) bolometers cooled to sub-Kelvin temperatures by multiplexing the readout of many TES channels onto a single pair of wires. Digital Frequency-domain Multiplexing (DfMux) is a multiplexing technique used in many CMB polarization experiments, such as the Simons Array, SPT-3 G, and EBEX. The DfMux system studied here uses LC filters with resonant frequencies ranging from 1.5 to 4.5 MHz connected to an array of TESs. Each detector has an amplitude-modulated carrier tone at the resonant frequency of its accompanying LC resonator. The signal is recovered via quadrature demodulation where the in-phase (I) component of the demodulated current is in phase with the complex admittance of the circuit and the quadrature (Q) component is orthogonal to I. Observed excess current noise in the Q component is consistent with fluctuations in the resonant frequency. This noise has been shown to be non-orthogonal to the phase of the detector’s responsivity. We present a detailed analysis of the phase of responsivity of the TES and noise sources in our DfMux readout system. Further, we investigate how modifications to the TES operating resistance and bias frequency can affect the phase of noise relative to the phase of the detector responsivity, using data from Simons Array to evaluate our predictions. We find that both the phase of responsivity and phase of noise are functions of the two tuning parameters, which can be purposefully selected to maximize signal-to-noise (SNR) ratio.

47 OTHER INSTRUMENTATION↗
NASA NTRS2001

Low Power Silicon Germanium Electronics for Microwave Radiometers

Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

Doiron, Terence A.↗
NASA NTRS2001

Power and Efficiency Optimized in Traveling-Wave Tubes Over a Broad Frequency Bandwidth

A traveling-wave tube (TWT) is an electron beam device that is used to amplify electromagnetic communication waves at radio and microwave frequencies. TWT's are critical components in deep space probes, communication satellites, and high-power radar systems. Power conversion efficiency is of paramount importance for TWT's employed in deep space probes and communication satellites. A previous effort was very successful in increasing efficiency and power at a single frequency (ref. 1). Such an algorithm is sufficient for narrow bandwidth designs, but for optimal designs in applications that require high radiofrequency power over a wide bandwidth, such as high-density communications or high-resolution radar, the variation of the circuit response with respect to frequency must be considered. This work at the NASA Glenn Research Center is the first to develop techniques for optimizing TWT efficiency and output power over a broad frequency bandwidth (ref. 2). The techniques are based on simulated annealing, which has the advantage over conventional optimization techniques in that it enables the best possible solution to be obtained (ref. 3). Two new broadband simulated annealing algorithms were developed that optimize (1) minimum saturated power efficiency over a frequency bandwidth and (2) simultaneous bandwidth and minimum power efficiency over the frequency band with constant input power. The algorithms were incorporated into the NASA coupled-cavity TWT computer model (ref. 4) and used to design optimal phase velocity tapers using the 59- to 64-GHz Hughes 961HA coupled-cavity TWT as a baseline model. In comparison to the baseline design, the computational results of the first broad-band design algorithm show an improvement of 73.9 percent in minimum saturated efficiency (see the top graph). The second broadband design algorithm (see the bottom graph) improves minimum radiofrequency efficiency with constant input power drive by a factor of 2.7 at the high band edge (64 GHz) and increases simultaneous bandwidth by 500 MHz.

Wilson, Jeffrey D.↗
NASA NTRS2004

Measuring Radiation Patterns of Reconfigurable Patch Antennas on Wafers

An apparatus and technique have been devised for measuring the radiation pattern of a microwave patch antenna that is one of a number of identical units that have been fabricated in a planar array on a high-resistivity silicon wafer. The apparatus and technique are intended, more specifically, for application to such an antenna that includes a DC-controlled microelectromechanical system (MEMS) actuator for switching the antenna between two polarization states or between two resonance frequencies. Prior to the development of the present apparatus and technique, patch antennas on wafers were tested by techniques and equipment that are more suited to testing of conventional printed-circuit antennas. The techniques included sawing of the wafers to isolate individual antennas for testing. The equipment included custom-built test fixtures that included special signal launchers and transmission-line transitions. The present apparatus and technique eliminate the need for sawing wafers and for custom-built test fixtures, thereby making it possible to test antennas in less time and at less cost. Moreover, in a production setting, elimination of the premature sawing of wafers for testing reduces loss from breakage, thereby enhancing yield.

Simons, Rainee N.↗
DOE OSTI2025

Gigahertz-frequency acousto-optic phase modulation of visible light in a CMOS-fabricated photonic circuit

Optical phase modulators operating at visible wavelengths are essential components for photonic technologies such as those for quantum control, communications, and laser ranging. However, they remain challenging to implement in scalable, integrated platforms capable of handling high optical powers. Here we present a visible-light, gigahertz-frequency acousto-optic phase modulator, fabricated on a 200-mm wafer in a volume CMOS foundry, that supports greater than 500 mW of optical power at 730 nm. The device combines a piezoelectric transducer and a photonic waveguide within a single, wavelength-scale structure that confines both a propagating optical mode and an electrically excitable breathing-mode mechanical resonance. By tuning the device’s geometry to optimize the optomechanical interaction, we achieve modulation depths up to 4.85 rad with 80 mW of applied microwave power at 2.31 GHz in a 2-mm-long device. This corresponds to resonant modulation figures of merit of V π = 1.32V and V π ⋅ L = 0.26V cm. To our knowledge, this is the lowest V π ever demonstrated in any acousto-optic phase modulator and represents a 15-fold reduction in V π and a 100-fold reduction in required microwave power relative to state-of-the-art modulators with high visible-wavelength power handling commonly employed in quantum control systems.

Freedman, Jacob M. [Univ. of Arizona, Tucson, AZ (↗