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At least 649 records · Page 36

Revisiting Temporal Blocking Stencil Optimizations

Iterative stencils are used widely across the spectrum of High Performance Computing (HPC) applications. Many efforts have been put into optimizing stencil GPU kernels, given the prevalence of GPU-accelerated supercomputers. To improve the data locality, temporal blocking is an optimization that combines a batch of time steps to process them together. Under the observation that GPUs are evolving to resemble CPUs in some aspects, we revisit temporal blocking optimizations for GPUs. We explore how temporal blocking schemes can be adapted to the new features in the recent Nvidia GPUs, including large scratchpad memory, hardware prefetching, and device-wide synchronization. We propose a novel temporal blocking method, EBISU, which champions low device occupancy to drive aggressive deep temporal blocking on large tiles that are executed tile-by-tile. We compare EBISU with state-of-the-art temporal blocking libraries: STENCILGEN and AN5D. We also compare with state-of-the-art stencil auto-tuning tools that are equipped with temporal blocking optimizations: ARTEMIS and DRSTENCIL. Over a wide range of stencil benchmarks, EBISU achieves speedups up to 2.53x and a geometric mean speedup of 1.49x over the best state-of-the-art performance in each stencil benchmark.

Zhang, Lingqi↗

RH1020 Single Event Clock Upset Summary Report

This report summarizes the testing and analysis of "single event clock upset' in the RH1020. Also included are SEU-rate predictions and design recommendations for risk analysis and reduction. The subject of "upsets" in the RH1020 is best understood by using a model consisting of a global clock buffer and a D-type flip-flop as the basic memory unit. The RH1020 is built on the ACT 1 family architecture. As such, it has one low-skew global clock buffer with a TTL-level input threshold that is accessed via a single dedicated pin. The clock signal is driven to full CMOS levels, buffered, and sent to individual row buffers with one buffer per channel. For low-skew performance, the outputs of all of the RH1020 row buffers are shorted together via metal lines, as is done in the A1020B. All storage in the RH1020 consists of routed flip-flops, constructed with multiplexors and feedback through the routing segments. A simple latch can be constructed from a single (combinatorial or C) module; an edge-triggered flip-flop is constructed using two concatenated latches. There is no storage in the I/O modules. The front end of the clock buffering circuitry, at a common point relative to the row buffer, is a sub-circuit that was determined to be the most susceptible to heavy ions. This is due, in part, to its smaller transistors compared to the rest of the circuitry. This conclusion is also supported by SPICE simulations and an analysis of the heavy ion data, described in this report. The edge triggered D flip-flop has two single-event-upset modes. Mode one, called C-module upset, is caused by a heavy ion striking the C-module's sensitive area on the silicon and produces a soft single bit error at the output of the flip-flop. Mode two, called clock upset, is caused by a heavy ion strike on the clock buffer, generating a runt pulse interpreted as a false clock signal and consequently producing errors at the flip-flop outputs. C-module upset sensitivity in the RH1020 is essentially the same as that of its ACT 1 siblings (A1020, A1020A and A1020B), which were well tested, analyzed, and documented in the literature.

Katz, Richard B.↗

The Gremlin Framework

The Gremlin sofrware package is a performance analysis approach targeted to support the Co-Design process for future systems. It consists of a series of modules that can be used to alter a machine's behavior with the goal of emulating future machine properties. The modules can be divided into several classes; the most significant ones are detailed below. PowGre is a series of modules that help explore the power consumption properties of applications and to determine the impact of power constraints on applications. Most of them use low-level processor interfaces to directly control voltage and frequency settings as well as per nodes, socket, or memory power bounds. MemGre are memory Gremlins and implement a new performance analysis technique that captures the application's effective use of the storage capacity of different levels of the memory hierarchy as well as the bandwidth between adjacent levels. The approach models various memory components as resources and measures how much of each resource the application uses from the application's own perspective. To the application a given amount of a resource is "used" if not having this amount will degrade the application's performance. This is in contrast to the hardware-centric perspective that considers "use" as any hardware action that utilizes the resource, even if it has no effect on performance. ResGre are Gremlins that use fault injection techniques to emulate higher fault rates than currently present in today's systems. Faults can be injected through various means, including network interposition, static analysis, and code modification, or direct application notification. ResGre also includes patches to previously released LLNL codes that can counteract and react to injected failures.

Source record↗

Systems and methods for rapid processing and storage of data

Systems and methods of building massively parallel computing systems using low power computing complexes in accordance with embodiments of the invention are disclosed. A massively parallel computing system in accordance with one embodiment of the invention includes at least one Solid State Blade configured to communicate via a high performance network fabric. In addition, each Solid State Blade includes a processor configured to communicate with a plurality of low power computing complexes interconnected by a router, and each low power computing complex includes at least one general processing core, an accelerator, an I/O interface, and cache memory and is configured to communicate with non-volatile solid state memory.

97 MATHEMATICS AND COMPUTING↗

Systems and methods for rapid processing and storage of data

Systems and methods of building massively parallel computing systems using low power computing complexes in accordance with embodiments of the invention are disclosed. A massively parallel computing system in accordance with one embodiment of the invention includes at least one Solid State Blade configured to communicate via a high performance network fabric. In addition, each Solid State Blade includes a processor configured to communicate with a plurality of low power computing complexes interconnected by a router, and each low power computing complex includes at least one general processing core, an accelerator, an I/O interface, and cache memory and is configured to communicate with non-volatile solid state memory.

Stalzer, Mark A.↗

Systems and methods for rapid processing and storage of data

Systems and methods of building massively parallel computing systems using low power computing complexes in accordance with embodiments of the invention are disclosed. A massively parallel computing system in accordance with one embodiment of the invention includes at least one Solid State Blade configured to communicate via a high performance network fabric. In addition, each Solid State Blade includes a processor configured to communicate with a plurality of low power computing complexes interconnected by a router, and each low power computing complex includes at least one general processing core, an accelerator, an I/O interface, and cache memory and is configured to communicate with non-volatile solid state memory.

Stalzer, Mark A.↗

High ferroelectric polarization in c-oriented BaTiO 3 epitaxial thin films on SrTiO 3 /Si(001)

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Martensite crystal structure in Ru-based high temperature shape memory alloys

Highlights: • A three level twinned microstructure is recognized in the β″ phase. • Wavy contrast boundaries which are typical for translation interfaces • Displacements are translations of tetragonal β′ phase, lost during transformation. • Six times bigger monoclinic cell is characterized by the disappearance of 5 translations. - Abstract: High temperature shape memory alloys RuNb and RuTa were investigated by X-ray diffraction in order to determine the structure of the low temperature β” martensite. Powder X-ray diffraction and Rietveld analysis confirm the monoclinic symmetry and allow a precise determination of the atom positions. The low temperature microstructure is the result of a martensitic transformation from a tetragonal β′ martensite. The analysis of how it is controlled by the space groups of the two phases and by their relative orientation is performed by transmission electron microscopy. A three level twinned microstructure is recognized in the β” phase. The investigation at the smallest scale twins reveals the presence of wavy contrast boundaries which are typical for translation interfaces. High resolution transmission electron microscopy images, accompanied by phase contrast imaging analysis, have been used to determine the translation vectors associated to the interfaces. These displacements are the translations of the tetragonal β′ phase which are lost during the transformation. The combination of X-ray diffraction and transmission electron microscopy investigation allows the suggestion of a global distortion mechanism that explains the atomic displacements in the β” form.

36 MATERIALS SCIENCE↗

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗

Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag{sub 2}S nanoparticles

In this study, Ag{sub 2}S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag{sub 2}S films are successfully crystallized on plastic substrates with synthesized Ag{sub 2}S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag{sub 2}S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 10{sup 3} cycles and 10{sup 4} sec, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Genetic polymorphisms of GRIN2A and GRIN2B modify the neurobehavioral effects of low-level lead exposure in children

Highlights: • Genetic polymorphisms may increase adverse effects of Pb on neurobehavioral processes. • We studied 330 participants of the Casa Pia Dental Amalgams Trial in Children. • Adverse interactions were found with variants of GRIN2A and GRIN2B in boys. • Our results implicate genetic factors in defining susceptibility to Pb neurotoxicity. Lead (Pb) is neurotoxic and children are highly susceptible to this effect, particularly within the context of continuous low-level Pb exposure. A current major challenge is identification of children who may be uniquely susceptible to Pb toxicity because of genetic predisposition. Learning and memory are among the neurobehavioral processes that are most notably affected by Pb exposure, and modification of N-methyl-D-aspartate receptors (NMDAR) that regulate these processes during development are postulated to underlie these adverse effects of Pb. We examined the hypothesis that polymorphic variants of genes encoding glutamate receptor, ionotropic, NMDAR subunits 2A and 2B, GRIN2A and GRIN2B, exacerbate the adverse effects of Pb exposure on these processes in children. Participants were subjects who participated as children in the Casa Pia Dental Amalgam Clinical Trial and for whom baseline blood Pb concentrations and annual neurobehavioral test results over the 7 year course of the clinical trial were available. Genotyping assays were performed for variants of GRIN2A (rs727605 and rs1070503) and GRIN2B (rs7301328 and rs1806201) on biological samples acquired from 330 of the original 507 trial participants. Regression modeling strategies were employed to evaluate the association between genotype status, Pb exposure, and neurobehavioral test outcomes. Numerous significant adverse interaction effects between variants of both GRIN2A and GRIN2B, individually and in combination, and Pb exposure were observed particularly among boys, preferentially within the domains of Learning & Memory and Executive Function. In contrast, very few interaction effects were observed among similarly genotyped girls with comparable Pb exposure. These findings support observations of an essential role of GRIN2A and GRIN2B on developmental processes underlying learning and memory as well as other neurological functions in children and demonstrate, further, modification of Pb effects on these processes by specific variants of both GRIN2A and GRIN2B genes. These observations highlight the importance of genetic factors in defining susceptibility to Pb neurotoxicity and may have important public health implications for future strategies aimed at protecting children and adolescents from potential health risks associated with low-level Pb exposure.

60 APPLIED LIFE SCIENCES↗

The persistence of memory in ionic conduction probed by nonlinear optics

Predicting practical rates of transport in condensed phases enables the rational design of materials, devices and processes. This is especially critical to developing low-carbon energy technologies such as rechargeable batteries. For ionic conduction, the collective mechanisms, variation of conductivity with timescales and confinement, and ambiguity in the phononic origin of translation, call for a direct probe of the fundamental steps of ionic diffusion: ion hops. However, such hops are rare-event large-amplitude translations, and are challenging to excite and detect. Here we use single-cycle terahertz pumps to impulsively trigger ionic hopping in battery solid electrolytes. This is visualized by an induced transient birefringence, enabling direct probing of anisotropy in ionic hopping on the picosecond timescale. The relaxation of the transient signal measures the decay of orientational memory, and the production of entropy in diffusion. We extend experimental results using in silico transient birefringence to identify vibrational attempt frequencies for ion hopping. Using nonlinear optical methods, we probe ion transport at its fastest limit, distinguish correlated conduction mechanisms from a true random walk at the atomic scale, and demonstrate the connection between activated transport and the thermodynamics of information.

25 ENERGY STORAGE↗

Improved film quality of plasma enhanced atomic layer deposition SiO{sub 2} using plasma treatment cycle

Chemical, physical, and electrical characteristics of high quality silicon dioxide (SiO{sub 2}) films grown using low temperature plasma enhanced atomic layer deposition (PE-ALD) have been investigated as a buffer layer for three dimensional vertical NAND flash memory devices. The comparative angle resolved x-ray photoelectron spectroscopy studies show the plasma treatment cycle causes to shift the core level binding energy (chemical shifts) in the SiO{sub 2} film. The wet etch rates with respect to plasma treatment cycle times were varied due to curing of the SiO{sub 2} network defects by Ar{sup +} ions and oxygen radicals. It is assumed that the angle between the bonds linking SiO{sub 4} tetrahedra is a critical point understanding the variation in wet etch rate of SiO{sub 2}. The features of wet etch rate of low temperature high quality SiO{sub 2} demonstrated lower than high temperature low-pressure chemical vapor deposition (LP-CVD) SiO{sub 2} values. In addition, the better step-coverage compared to that of the LP-CVD SiO{sub 2} film was achieved from the deep trench structure having the 20:1 aspect ratio. PE-ALD SiO{sub 2} with plasma treatment cycle showed excellent I–V properties with higher breakdown voltage compared to LP-CVD SiO{sub 2} and similar to the thermal SiO{sub 2} carrier transport plot.

36 MATERIALS SCIENCE↗

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗

Low-temperature grapho-epitaxial La-substituted BiFeO 3 on metallic perovskite

Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO 3 thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO 3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb 0.75 Bi 0.25 O 3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO 3 , BaPb 0.75 Bi 0.25 O 3 , and SrTiO 3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO 3 . Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO 3 , where SrRuO 3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.

36 MATERIALS SCIENCE↗

Simulated weightlessness in fish and neurophysiological studies on memory storage

Simulated weightlessness was used to study the different types of gravity responses in blind fish. It was found that a shift in the direction of low magnitude acceleration in weightlessness causes a rapid 180 deg turn in the blind fish, while a shift in the direction of the applied acceleration in the earth's gravitational field is not significant because of a higher acceleration magnitude threshold than during the zero g condition. This increased responsiveness seems to be explained by a combination of directional sensitivity with a Weber-Fechner relationship of increased receptor sensitivity at diminished levels of background stimulation. Neurophysical studies of the statocyst nerve of the gastropod Mollusc Pleurobranchaea Californica were undertaken in order to understand how complex otolith systems operate. Information storage was investigated on relatively simple neuronal networks in the mollusc Aplysia. Intracellular electrical stimulation of isolated neurons show that a manipulation of autoditonous rhymicity is possible. It was also found that glycolysis and oxidative phosphorylation are involved in inherent rhymicity of Aplysis neurons.

Vonbaumgarten, R. J.↗

Effect of Annealing on Perpendicular Magnetic Anisotropy and Low Saturation Magnetization of MgO/Co{sub 2}FeAl/Mo Trilayer Films

In this study, we report our approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) at oxide/ferromagnetic metal of Heusler alloy (HA) interface by tuning the parameter of annealing temperature. Robust PMA energy density (K{sub eff}) of ∼ 0.43 × 10{sup 6} erg/cm{sup 3} and small saturation magnetization (M{sub s}) as low as ∼ 248 emu/cm{sup 3} have been achieved for MgO/Co{sub 2}FeAl (CFA)/Mo stacks at 400 {sup ∘}C. We identify that PMA energy is thermally stable up to the maximum temperature of 400 {sup ∘}C. Effect of annealing temperature on surface morphology, grain distribution, and surface roughness of the stacks are investigated by atomic force microscopy (AFM). Further, X-ray photoelectron spectroscopy (XPS) study demonstrates that the interfacial oxidation decides the strong PMA property at MgO/Co{sub 2}FeAl interface during the annealing process. This MgO/CFA/Mo trilayer system can be a suitable candidate for the development of low-power consumption, huge-density data storage, high-thermal stability against the annealing temperature, and nonvolatile magnetic memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗