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At least 649 records · Page 36

Additive manufacturing method and assembly

Methods and assemblies for additive manufacturing portions of components with enhanced strength are provided. The assemblies comprise a first deposition head and an apparatus for causing one or more reinforcement fibers to extend more than two layers within previously-deposited layers of build material. The first deposition head is configured to deposit a plurality of layers of a filament comprising a reinforcement fiber and thermoplastic material. The apparatus may comprise a needle point configured to be inserted into the plurality of layers to displace the reinforcement fiber so that it extends two or more of the plurality of layers. The apparatus may additionally or alternatively comprise a second deposition head having a needle tip configured to be inserted into the plurality of layers to inject a length of a second filament comprising thermoplastic material and a reinforcement fiber so that the reinforcement fiber of the second filament extends two or more layers of the plurality of layers of the first filament.

Barr, Christian G.↗

Tunable Few-Layer van der Waals Crystals and Heterostructures as Emerging Energy and Quantum Materials (Final Technical Report)

2D and layered (van der Waals) semiconductors offer extraordinary opportunities for manipulating optically excited charge carriers, many-body excitations, and non-charge based quantum numbers. To date, research has focused on a limited group of materials, mostly transition metal dichalcogenides in the monolayer limit. Other van der Waals semiconductors, and especially few-layer to multilayer crystals and their heterostructures, carry large potential for the discovery of phenomena of interest for future energy and information technologies. But they remain largely unexplored, often due to a lack of access to high-quality materials and approaches for measuring their properties at the relevant scales. The goal of this project was to develop an EPSCoR-State/National Laboratory Partnership that addresses the challenges of preparing high-quality van der Waals semiconductors and of probing their structure, composition, and especially their optoelectronic and photonic properties, near the atomic scale using electron microscopy techniques. A central component of the project was the development of advanced methods for electron microscopy and electron-excited spectroscopy, taking advantage of unique samples as well as leading capabilities and expertise at the partner institutions. Efforts to advance leading-edge techniques was supported by ancillary developments, such as precision sample preparation for electron microscopy/spectroscopy, coordinated chemical imaging, and analytical electron microscopy. Experiments in materials synthesis and technique development were closely linked to theory and computation. The results obtained under this project yielded multifaceted benefits to the involved partners and their institutions, DOE-BES, the wider scientific community, and society at large, particularly in the State of Nebraska through dividends from knowledge and human capital generated under the project.

36 MATERIALS SCIENCE↗

Plasma-based method for delayering of circuits

The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Shul, Randy J.↗

Modified Data Collection And Analysis Codes Of Using Tcm (thermal Conductivity Microscope) To Measure Thermal Conductivity And Diffusivity

The "data collection" basically involves setting up the thermal wave frequency, laser scan distance, and other parameters related to the experimental setup. The modification of this code is minor and the details of this code can be found in the earlier patent ("thermal conductivity microscope"). The "data analysis" instead, replaces the simplified analytical model by a more complete analytical model, and used a "thermoquadruple" method to solve the analytical model. The efficiency is orders of magnitude improved and the accuracy is also better. Meanwhile, the previous model can only handle a two-layer sample structure. The new, complete model can handle materials with multiple layers (any given number), which is necessary to handle post ion irradiated materials.

Hua, Zilong [Idaho National Laboratory (INL), Idah↗

Visualizing the Effect of Oxidation on Magnetic Domain Behavior of Nanoscale Fe 3 GeTe 2 for Applications in Spintronics

Magnetic van der Waals (vdW) materials offer an opportunity to design heterostructures that will lead to exotic functionalities that arise from interfacial interaction. In addition to coupling to different vdW materials, the naturally oxidized surface layer of a vdW material also forms a heterostructure with its bulk film, giving rise to intriguing phenomena. Here, we directly observe the impact of oxidation on the magnetic domains, namely, magnetic stripe domain and skyrmions, in a nanoscale Fe 3 GeTe 2 flake using cryo Lorentz transmission electron microscopy. After the Fe 3 GeTe 2 is exposed to ambient conditions, partial oxidation leads to an increase in the density of skyrmions even under zero magnetic field. Complete oxidation leads to a loss of the magnetic domain structure. We observe a gradual change in Fe 3 GeTe 2 from single crystal to amorphous as the oxidation increases. The oxidized Fe 3 GeTe 2 primarily consists of iron oxide, which could be antiferromagnetic in nature. We hypothesize that the interfacial interaction between these surface antiferromagnetic oxides and the bulk ferromagnetic Fe 3 GeTe 2 , as well as the effect of interfacial roughness, leads to the increase in Néel skyrmion creation. Furthermore, this work opens a path to harness controlled oxidation as a build block to create dense skyrmion lattices without the need for an external magnetic field, leading to potential future applications in spintronic devices.

36 MATERIALS SCIENCE↗

Numerical investigation of magneto-inertial fusion targets magnetized by dynamic enforcement of helical current flow

Magnetized Liner Inertial Fusion (MagLIF) targets require premagnetization to reduce thermal conduction losses from the laser-heated fuel to the liner material during implosion. MagLIF targets are typically magnetized by external magnetic field coils which are technologically limited to providing <20 T axial magnetic fields in the fusion fuel. We present a novel target design, AutoMag-D, which employs dynamic enforcement of helical current in the liner, resulting in >20 T axial magnetic field in the fuel region prior to implosion without the need of external magnetic field coils. These self-magnetizing liners are made of helically oriented alternating electrically conductive material and electrically insulating material surrounded by a thin, conductive outer radial layer. As the liner is pulsed with a ∼ 20 MA, ∼ 100 ns rise time drive current from Z, the outer layer of conductive material is shocked and intensely Joule heated, causing it to melt, vaporize, and turn to plasma. This allows the magnetic drive field to diffuse radially inward which dynamically enforces current flow in the helical conduction paths in the liner and produces axial magnetic field in the fuel region prior to implosion of the inner liner surface. AutoMag-D liner designs do not require dielectric breakdown of electrically insulating material (as in traditional auto-magnetizing helical liners) and do not require helical return current geometries (as in dynamic screw pinches). We present results from three-dimensional radiation-magnetohydrodynamic simulations of MagLIF implosions employing AutoMag-D liner designs. Simulated AutoMag-D targets demonstrate improved fuel conditions and thermonuclear yield compared to traditional MagLIF.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers

The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO 3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba 1–x Ca x O films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interlayers and associated systems, devices, and methods

Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.

Baldo, Marc A.↗

Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities

Non-von Neumann computing using neuromorphic systems based on analogue synaptic and neuronal elements has emerged as a potential solution to tackle the growing need for more efficient data processing, but progress toward practical systems has been stymied due to a lack of materials and devices with the appropriate attributes. Recently, solid state electrochemical ion-insertion, also known as electrochemical random access memory (ECRAM) has emerged as a promising approach to realize the needed device characteristics. ECRAM is a three terminal device that operates by tuning electronic conductance in functional materials through solid-state electrochemical redox reactions. This mechanism can be considered as a gate-controlled bulk modulation of dopants and/or phases in the channel. Early work demonstrating that ECRAM can achieve nearly ideal analogue synaptic characteristics has sparked tremendous interest in this approach. More recently, the realization that electrochemical ion insertion can be used to tune the electronic properties of many types of materials including transition metal oxides, layered two-dimensional materials, organic and coordination polymers, and that the changes in conductance can span orders of magnitude has further attracted interest in ECRAM as the basis for analogue synaptic elements for inference accelerators as well as for dynamical devices that can emulate a wide range of neuronal characteristics for implementation in analogue spiking neural networks. At its core, ECRAM shares many fundamental aspects with rechargeable batteries, where ion insertion materials are used extensively for their ability to reversibly store charge and energy. Computing applications, however, present drastically different requirements: systems will require many millions of devices, scaled down to tens of nanometers, all while achieving reliable electronic-state tuning at scaled-up rates and endurances, and with minimal energy dissipation and noise. Further, in this review, we discuss the history, basic concepts, recent progress, as well as the challenges and opportunities for different types of ECRAM, broadly grouped by their primary mobile ionic charge carrier, including Li, protons, and oxygen vacancies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning electrical and interfacial thermal properties of bilayer MoS2 via electrochemical intercalation

Layered two-dimensional (2D) materials such as MoS 2 have attracted much attention for nano- and opto-electronics. Recently, intercalation (e.g. of ions, atoms, or molecules) has emerged as an effective technique to modulate material properties of such layered 2D films reversibly. We probe both the electrical and thermal properties of Li-intercalated bilayer MoS 2 nanosheets by combining electrical measurements and Raman spectroscopy. Furthermore, we demonstrate reversible modulation of carrier density over more than two orders of magnitude (from 0.8 × 10 12 to 1.5 × 10 14 cm -2 ), and we simultaneously obtain the thermal boundary conductance between the bilayer and its supporting SiO 2 substrate for an intercalated system for the first time. This thermal coupling can be reversibly modulated by nearly a factor of eight, from 14 ± 4.0 MW m -2 K -1 before intercalation to 1.8 ± 0.9 MW m -2 K -1 when the MoS 2 is fully lithiated. These results reveal electrochemical intercalation as a reversible tool to modulate and control both electrical and thermal properties of 2D layers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Metal sensitized color changing material

The subject invention pertains to color changeable, film materials comprising a metal substrate layer; a conducting polymer or conducting polymer composite layer; and an electrolyte layer. The conducting polymer or conducting polymer composite layer of the film material is capable of exhibiting changes in one or more optical properties when the film material is in contact with a metal. The subject invention also pertains to methods of preparing conducting polymer films capable of exhibiting changes in optical properties.

Ram, Manoj Kumar↗

Damping coating with a constraint layer

A coating is applied to a base material. The coating comprises a viscoelastic layer having a surface in which cavities are formed; and a constraint layer. The viscoelastic layer is disposed on the base material, and the constraint layer is disposed on, and partially bonded, at an interface, to the viscoelastic layer over the surface in which the cavities are formed. The cavities are filled with particles configured for vibration and frictional interaction at the partially bonded interface between the partially bonded viscoelastic layer and the constraint layer. A turbine blade having an airfoil with the subject coating is also provided.

Zhang, James↗

Optoelectronic devices and methods of making the same

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Palmstrom, Axel Finn↗

Development and Implementation of a Bag Degradation Predictive Tool at Los Alamos National Laboratory

Nuclear material packaging involves many complex variables derived from the stored material's properties, the storage environment, and the synergistic interaction of said material and its environment on the containment boundary. In the Plutonium Facility (PF-4) at Los Alamos National Laboratory (LANL) the typical containment boundary found, starting from the stored material itself to the outermost containment layer, consists of the material contained within a stainless steel (typically 304) slip-lid (or other equivalent stainless steel packaging layer) wrapped in an sPVC bag-out bag contained within a facility approved outer container stored within the boundaries of an approved facility (i.e., a building designed and approved to store nuclear material). This packaging configuration, though occasionally deviated from in the past, represents the current procedurally enforced, expected containment structure for all interim nuclear material containment outside of an engineered control barrier (e.g., a glovebox). Over the life of containerization research at LANL, packaging engineers have become increasingly concerned with the degradation of the sPVC bag-out bag, which can cause corrosion to the outermost packaging layer as well as possible exposure to alpha contamination if the bag-out bag layer is degraded to the point of containment failure. A bag-out bag degradation predictive tool (BDT) is therefore needed to assess the current and future nuclear material inventory for possible bag degradation in order to continue to ensure safe operations for the facility and its workers to deliver on the vital national security mission of 30 PPY.

42 ENGINEERING↗

Seizure detection device

Example aspects of a collector for a seizure detection device, a seizure detection device, and a method of detecting a seizure are disclosed. The collector for a seizure detection device can comprise a collector material configured to collect volatile organic compounds given off from a patient's skin; a wrapping configured to isolate the collector material from an external environment; a heater comprising a heating element, the heating element configured to emit a thermal pulse to desorb the volatile organic compounds from the collector material; and a mesh layer configured to prevent the collector material from contacting the patient's skin, wherein the collector material is received between the wrapping and the mesh layer.

Arnold, Gary Stephen↗

Volatile organic compound detection device

A volatile organic compound collector can include a collector material configured to collect volatile organic compounds given off from a patient's skin; a wrapping configured to isolate the collector material from an external environment; a heater comprising a heating element, the heating element configured to emit a thermal pulse to desorb the volatile organic compounds from the collector material; and a mesh layer configured to prevent the collector material from contacting the patient's skin, wherein the collector material is received between the wrapping and the mesh layer.

Arnold, Gary Stephen↗

System and method for sub micron additive manufacturing

An apparatus is disclosed for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material. The apparatus may incorporate a laser for generating a laser beam, and a tunable mask for receiving the laser beam which has an optically dispersive element. The mask splits the laser beam into a plurality of emergent beams each having a subplurality of beamlets of varying or identical intensity, with each beamlet emerging from a unique subsection of illuminated regions of the mask. A collimator collimates at least one of the emergent beams to form a collimated beam. One or more focusing elements focuses the collimated beam into a focused beam which is projected as a focused image plane on or within the resist material. The focused beam simultaneously illuminates a layer of the resist material to process an entire layer in a parallel fashion.

Saha, Sourabh Kumar↗

Programmable hyperbolic polaritons in van der Waals semiconductors

Lighting a route for hyperbolic dispersion The propagation of light within a material is usually well defined, with the propagation described by scattering and dispersion. In artificially designed metamaterials and in anisotropic layered materials, the dispersion can be hyperbolic, giving rise to subwavelength confinement of the light. Sternbach et al. show that the hyperbolic dispersion can be optically switched on and off on demand in the layered transition metal dichalcogenide tungsten diselenide (see the Perspective by Deng and Chen). Illuminating the material with ultrafast pulses of sub-bandgap light creates a transient waveguide, resulting in hyperbolic dispersion in the material. The ability to tune the dispersion characteristics on demand using optical pumping is an effective approach for developing ultrafast switching photonic devices and controlling the propagation of light on the nanoscale. Science , this issue p. 617 ; see also p. 572

Science & Technology - Other Topics↗